• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• Journal of Korean Vacuum Science & Technology
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• 제6권2호
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• pp.55-57
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• 2002

Metal-vapor-vacuum-arc ion source is an ideal source for both high current metal ion implanter and high current plasma thin-film deposition systems. It uses the direct evaporation of metal from surface of cathode by vacuum arc to produce a very high flux of ion plasmas. The MEVVA ion source, the high-current metal-ion implanter and high-current magnetic-field-filtered plasma thin-film deposition systems developed in Beijing Normal University are introduced in this paper.

• 한국표면공학회지
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• 제24권3호
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• pp.119-124
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• 1991

Recently, the trend of research in hard coating is concentrate on developing the process of ionization rate under low operating pressure, to get the thin film with high adhesion and dense microstructures. In this study ionization rate enhancement type PVD process using permanent magnet is developed, which enhances the ionization rate by confining the plasma suppressing the wall loss of electron. By the result to investigate the characteristic of glow discharge, the ionization rate of this process is enhanced about twice as high as that of triod BARE process (about 26%), and more dense TiN microstructures are obtained in this process. Cylindrical ion energy analyzer is made and attached in front of a quadrupole mass filter for the analysis of the energy distribution of reactive gas and activated gas ions from the plasma zone. To analyze the operation mechanism of ion energy analyzer, computer simulation is performed by calculation the electric field environment using finite element method. By these analyses of ion energy distribution of outcoming ions from the plasma zone, it is found that magnetic field enhances ion kinetic energy as well as ionization rate. The other results of this study is that the foundation of feed-back system is constructed, which automatically control the partial pressure of reactive gas. In can be possible by recording the data of mass spectrum and ion energy analysis using A-D converter.

• 한국표면공학회지
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• 제39권3호
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• pp.105-109
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• 2006

The effects of negative carbon ion beam energy on the bonding configuration, hardness and surface roughness of DLC film prepared by a direct metal ion beam deposition system were investigated. As the negative carbon ion beam energy increased from 25 to 150 eV, the $sp^3$ fraction of DLC films was increased from 32 to 67%, while the surface roughness was decreased. The films prepared at 150 eV showed the more flat surface morphology of the film than that of the film prepared under another ion beam energy conditions. Surface roughness of DLC film varied from 0.62 to 0.22 nm with depositing carbon ion beam energy. Surface nano-hardness increased from 12 to 57 Gpa when increasing the negative carbon ion beam energy from 25 to 150 eV, and then decreased when increasing the ion beam energy from 150 to 200 eV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.279-282
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• 2001

The IBE(ion beam etching)-induced Schottky barrier variation which depends on various etching history related with ion energy, incident angle and etching time has been investigated using voltage-current, capacitance-voltage characteristics of metal-etched silicon contact and morphology of etched surface were studied using AFM(atomic force microscope). For ion beam etched n-type silicons, Schottky barrier is reduced according to ion beam energy. It can be seen that amount of donor-like positive charge created in the damaged layer is proportional to the ion energy. By contrary, for ion beam etched p-type silicons, the Schottky barrier and specific contact resistance are both increased. Not only etching time but also incident angle of ion beam has an effect on barrier height. Taping-mode AFM analysis shows increased roughness RMS(Root-Mean-Square) and depth distribution due to ion bombardment. Annealing in an N$_2$ ambient for 30 min was found to be effective in improving the diode characteristics of the etched samples and minimum annealing temperatures to recover IBE-induced barrier variation were related to ion beam energy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1104-1108
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• 2004

A Study has been made of surface modification of various polymers by ion implantation to change the optical transmittance property at ultraviolet ray (UV, $200\sim400nm$). The substrates were PC (Polycarbonate), PET(Polyethyleneteraphtalate) and PP (Polypropylene). The effects of ion implantation on the change of optical transmittance were investigated in relation to ion species, implantation energies and ion fluences. The N, Ar, Kr, Xe ion implantation performed at ion energies from 20 to 50keV. The fluences ranged from $5\times10^{15}$ to $7\times10^{16}ions/cm^2$. UV/Vis transmittance spectroscopy, FT-IR and XPS were used to investigate optical transmittance, chemical structure and surface chemical state of irradiated polymer. Surface color was changed from the yellow to the dark brown and the transmittance of UV ray in the range UV-A($320\sim400nm$) decreased more than 80% after ion implantation.

• 연구논문집
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• 통권30호
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• pp.137-145
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• 2000

Since the concept of osseointegration was introduced, titanium and titanium-based alloy materials have been increasingly used for bone-anchored metal in oralmaxillofacial and orthopedic reconstruction. Successful osseointegration has been attributed to biocompatibility and surface condition of metal implant among other factors. Although titanium and titanium alloys have an excellent over the metal ion release and biocompatibility, considerable controversy has developed over the metal ion and wear debris in vivo and vitro. In this study, nitrogen ion implantation technique was used to improve the corrosion resistance and wear property of titanium materials, ultimately to enhance the tissue reaction to titanium implants As ion implantation energy was increased, projected range of nitrogen ion the Ti substrate was gradually increased. Under condition of constant ion energy. atomic concentration of nitrogen was also increased with ion doses. The friction in Hank's solution was increased with ion doses. The friction coefficient of ion implanted specimens in HanK's solution was increased from 0.39, 0.47 to 0.52, 0.65 respectively under high energy and ion dose conditions. As increasing ion energies and ion dose, amount of wear was reduced.

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2005년도 Proceedings of The 6th korea-china joint workshop on nuclear waste management
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• pp.214-221
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• 2005

Spent ion-exchanged resin generated from various purification systems in CANDU reactor is causing concern due to a limited storage capacity and safe disposal. As a suggestion for a proper treatment technology for the spent ion-exchanged resin containing a high activity of C­14 radionuclide which would be classified as Class A and C wastes, a fundamental study for the development of C-14 removal technology from a spent resin was performed. The adsorption characteristics of the inactive $HCO_3^-$ ion and other ions in a stripping solution on IRN-150 mixed resin was evaluated and the removal technology of the $HCO_3^-$ ion adsorbed on IRN-150 by an alkaline stripping method was proposed.

• Journal of Electrochemical Science and Technology
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• 제13권1호
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• pp.19-31
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• 2022

Lithium-ion battery development is one of the most active contemporary research areas, gaining more attention in recent times, following the increasing importance of energy storage technology. The galvanostatic intermittent titration technique (GITT) has become a crucial method among various electrochemical analyses for battery research. During one titration step in GITT, which consists of a constant current pulse followed by a relaxation period, transient and steady-state voltage changes were measured. It draws both thermodynamic and kinetic parameters. The diffusion coefficients of the lithium ion, open-circuit voltages, and overpotentials at various states of charge can be deduced by a series of titration steps. This mini-review details the theoretical and practical aspects of GITT analysis, from the measurement method to the derivation of the diffusivity equation for research cases according to the specific experimental purpose. This will shed light on a better understanding of electrochemical reactions and provide insight into the methods for improving lithium-ion battery performance.

• Journal of Electrical Engineering and Technology
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• 제13권3호
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• pp.1173-1184
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• 2018

The lifetime of a lithium-ion battery is one of the most important issues of the energy storage system (ESS) because of its stable and reliable operation. In this paper, the lifetime management method of the lithium-ion battery for energy storage system is proposed. The lifetime of the lithium-ion battery varies, depending on the power usage, operation condition, and, especially the selected depth of discharge (DOD). The proposed method estimates the total lifetime of the lithium-ion battery by calculating the total transferable energy corresponding to the selected DOD and achievable cycle (ACC) data. It is also demonstrated that the battery model can obtain state of charge (SOC) corresponding to the ESS operation simultaneously. The simulation results are presented performing the proposed lifetime management method. Also, the total revenue and entire lifetime prediction of a lithium-ion battery of ESS are presented considering the DOD, operation and various condition for the nations of USA and Korea using the proposed method.