• 제목/요약/키워드: Ion concentration and type

검색결과 287건 처리시간 0.026초

Studies on the New Analytical Methods for Separation and Recovery of Rare Earth Metals (I) : Adsorption Characteristics of U(VI) Ion by New Synthetic Resins with Macrocyclic Compounds (희토류금속 분리 및 회수를 위한 분석화학적 연구 (제1보) : 우라늄(VI)의 분리회수를 위한 선택이온교환수지 합성과 우라늄(VI) 금속이온의 흡착특성)

  • Jung Oh Jin;Hak Jin Jung;Joon Tea Kim
    • Journal of the Korean Chemical Society
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    • 제32권4호
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    • pp.358-370
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    • 1988
  • Several new ion exchange resins have been synthesized from chloromethyl styrene-1,4-divinylbenzene(DVB) with 1%, 2%, 4%, and 10%-crosslinking and macrocyclic ligands of cryptand type by interpolymerization method. The adsorption characteristics and the pH, time, solvents and concentration dependence of the adsorption of metal ions by this resin were studied. The correlation between the separation characteristics of uranium, rare earths and transition metal on the resins and the stability constants of complexes with macrocyclic ligands have been examined. The resins were very stable in both acidic and basic media and have good resistance to heat at $280^{\circ}C$. The $UO_2^{+2}$ aqueous solution are not adsorbed on the resins below pH 3.0, but the power of adsorption of $UO_2^{2+}$ increased rapidly above pH 4.0. The optimum equilibrium time for adsorption of metallic ions was twenty minutes and adsorptive power decreased in proportion to crosslinking size of the resins and order of dielectric constants of solvents used and the selective sequence for metal cations is in the order of $UO_2^{2+},\;Cu^{2+}\;and\;Nd^{3+}$.

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Characteristics of Soil CO2 Efflux in Even-aged Alder Compared to Korean Pine Plantations in Central Korea

  • Kim, Yong Suk;Yi, Myong Jong;Lee, Yoon Young;Son, Yowhan;Koike, Takayoshi
    • Journal of Forest and Environmental Science
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    • 제28권4호
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    • pp.232-241
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    • 2012
  • We investigated the relationship between vegetation type and soil carbon dynamics in even-aged alder (Alnus hirsuta) and Korean pine (Pinus koraiensis) plantations in central Korea. Both forests were located on the same soil parent material and occupied similar topographic positions. Soil $CO_2$ efflux in the two plantations was determined using a dynamic chamber method accompanied by measurements of soil moisture content and temperature. Mean soil temperature was similar in the two plantations, but mean soil water content was significantly higher in the alder plantation than in the pine plantation. In both plantations, seasonal patterns in soil $CO_2$ efflux exhibited pronounced variation that corresponded to soil temperature. Soil water content did not affect the seasonal variation in soil $CO_2$ efflux. However, in summer, when soil temperature was above $17^{\circ}C$, soil $CO_2$ efflux increased linearly with soil water content in the alder plantation. Estimated $Q_{10}$ was 3.3 for the alder plantation and 2.7 for the pine plantation. Mean soil respiration during the measurement period in the alder plantation was 0.43 g $CO_2\;m^{-2}\;h^{-1}$, which was 1.3 times higher than in the pine plantation (0.33 g $CO_2\;m^{-2}\;h^{-1}$). Higher soil $CO_2$ efflux in the alder plantation might be related to nitrogen availability, particularly the concentration of $NO_3{^-}$, which was measured using the ion-exchange resin bag method.

Fabrication and Characteristic of C-doped Base AlGaAs/GaAs HBT using Carbontetrachloride $CCI_4$ ($CCI_4$ 를 사용하여 베이스를 탄소도핑한 AlGaAs/GaAs HBT의 제작 및 특성)

  • 손정환;김동욱;홍성철;권영세
    • Journal of the Korean Institute of Telematics and Electronics A
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    • 제30A권12호
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    • pp.51-59
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    • 1993
  • A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

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Chemical Leaching of Cobalt and Lithium from the Cathode Active Materials of Spent Lithium-ion Batteries by Organic Acid (폐(廢)리튬이온전지(電池) 양극활물질(陽極活物質)에서 유기산(有機廳)을 이용(利用)한 코발트 및 리튬의 화학적(化學的) 침출(浸出))

  • Ahn, Jae-Woo;Ahn, Hyo-Jin
    • Resources Recycling
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    • 제20권4호
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    • pp.65-70
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    • 2011
  • Environmental friendly leaching process for the recovery of cobalt and lithium from the $LiCoO_2$ was investigated by organic acids as a leaching reagent. The experimental parameters, such as organic acid type, concentrations of leachant and hydrogen peroxide, reaction time and temperature as well as the pulp density were tested to obtain the most effective conditions for the leaching of cobalt and lithium. The results showed that the latic acid was the most effective leaching reagent for cobalt and lithium among the organic acids and was reached about 99.9% of leaching percentage respectively. With the increase of the concentration of citric acid, hydrogen peroxide and temperature, the leaching rate of cobalt and lithium increased. But the increase of pulp density decreased the leaching rate of cobalt and lithium.

Separation and Recovery of Ce, Nd and V from Spent FCC Catalyst (FCC 폐촉매로부터 Ce, Nd 및 V의 분리 회수 프로세스)

  • Jeon, Sung Kyun;Yang, Jong Gyu;Kim, Jong Hwa;Lee, Sung Sik
    • Applied Chemistry for Engineering
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    • 제8권4호
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    • pp.679-684
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    • 1997
  • The major constituents in spent FCC catalysts are Si, Al, Fe, Ti, alkali metals and some others. The spent catalyst is also composed small amounts of rare metals such as Ce, Nd, Ni and V. The selective adsorption and concentration of Ce and Nd from the leaching solution of spent FCC catalysts with sulfuric acid($0.25mol/dm^3$) were carried out by the column method with a chelate resin having a functional group of aminophosphoric acid type. Ce and Nd were separated from eluate liquor containing Al, Nd and V by the precipitation process with oxalic acid. Vanadium is purified from chloride ion coexistance by solvent extraction, employing tri-n-octyl phosphine oxide as extractant with Al in the raffinate solution. Rare metals with the purity of 99 percent were obtained from the spent FCC catalyst.

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Effect of Mn-addition on Catalytic Activity of $Mn/In_2O_3$ in Methane Activation

  • Park, Jong Sik;Jun Jong Ho;Kim Yong Rok;Lee Sung Han
    • Bulletin of the Korean Chemical Society
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    • 제15권12호
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    • pp.1058-1064
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    • 1994
  • Mn/In$_2O_3$ systems with a variety of Mn mol${\%}$ were prepared to investigate the effect of Mn-addition on the catalytic activity of Mn/In$_2O_3$ in the oxidative coupling of methane. The oxidative coupling of methane was examined on pure In$_2O_3$ and Mn/In$_2O_3$ catalysts by cofeeding gaseous methane and oxygen under atmospheric pressure between 650 and 830 $^{\circ}C$. Although pure In$_2O_3$ showed no C$_2$ selectivity, both the C$_2$ yield and the C$_2$ selectivity were increased by Mn-doping. The 5.1 mol${\%}$ Mn-doped In$_2O_3$ catalyst showed the best C$_2$ yield of 2.6${\%}$ with a selectivity of 19.1${\%}$. The electrical conductivities of pure and Mn-doped In$_2O_3$ systems were measured in the temperature range of 25 to 100 $^{\circ}C$ at PO$_2$'S of 1 ${\times}$ 10$^{-7}$ to 1 ${\times}$ 10 $^{-1}$ atm. The electrical conductivities were decreased with increasing Mn mol${\%}$ and PO$_2$, indicating the specimens to be n-type semiconductors. Electrons serve as the carriers and manganese can act as an electron acceptor in the specimens. Manganese ions doped in In$_2O_3$ inhibit the ionization of neutral interstitial indium or the transfer of lattice indium to interstitial sites and increase the formation of oxygen vacancy, giving rise to the increase of the concentration of active oxygen ion on the surface. It is suggested that the active oxygen species adsorbed on oxygen vacancies are responsible for the activation of methane.

The development of the Ionizer using clean room (청정환경용 정전기 제거장치 개발)

  • Jeong, Jong-Hyeog;Woo, Dong Sik
    • Journal of the Korea Academia-Industrial cooperation Society
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    • 제19권1호
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    • pp.603-608
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    • 2018
  • Although the voltage-applied discharge method is most widely used in the semiconductor and display industries, periodic management costs are incurred because the method causes defects due to the absorption of ambient fine dust and causes emitter tip contamination due to the discharge. The emitter tip contamination problem is caused by the accumulation of fine particles in ambient air due to the corona discharge of the ionizer. Fuzzy ball generation accelerates the wear of the emitter tip and deteriorates the performance of the ionizer. Although a mechanical cleaning method using a manual brush or an automatic brush is effective for contaminant removal, it requires management of additional mechanical parts by the user. In some cases, contaminants accumulated in the emitter may be transferred to the wafer or product. In order to solve this problem, we developed an ionizer for a clean environment that can remove the pencil-type emitter tip and directly ionize the surrounding gas molecules using the tungsten wire located inside the ion tank. As a result of testing and certification by the Korea Institute of Machinery and Materials, the average concentration was $0.7572particles/ft^3$, the decay time was less than two seconds, and the ion valance was 7.6 V, which is satisfactory.

Blockade of Kv1.5 channels by the antidepressant drug sertraline

  • Lee, Hyang Mi;Hahn, Sang June;Choi, Bok Hee
    • The Korean Journal of Physiology and Pharmacology
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    • 제20권2호
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    • pp.193-200
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    • 2016
  • Sertraline, a selective serotonin reuptake inhibitor (SSRI), has been reported to lead to cardiac toxicity even at therapeutic doses including sudden cardiac death and ventricular arrhythmia. And in a SSRI-independent manner, sertraline has been known to inhibit various voltage-dependent channels, which play an important role in regulation of cardiovascular system. In the present study, we investigated the action of sertraline on Kv1.5, which is one of cardiac ion channels. The effect of sertraline on the cloned neuronal rat Kv1.5 channels stably expressed in Chinese hamster ovary cells was investigated using the whole-cell patch-clamp technique. Sertraline reduced Kv1.5 whole-cell currents in a reversible concentration-dependent manner, with an $IC_{50}$ value and a Hill coefficient of $0.71{\mu}M$ and 1.29, respectively. Sertraline accelerated the decay rate of inactivation of Kv1.5 currents without modifying the kinetics of current activation. The inhibition increased steeply between -20 and 0 mV, which corresponded with the voltage range for channel opening. In the voltage range positive to +10 mV, inhibition displayed a weak voltage dependence, consistent with an electrical distance ${\delta}$ of 0.16. Sertraline slowed the deactivation time course, resulting in a tail crossover phenomenon when the tail currents, recorded in the presence and absence of sertraline, were superimposed. Inhibition of Kv1.5 by sertraline was use-dependent. The present results suggest that sertraline acts on Kv1.5 currents as an open-channel blocker.

Effect of High Pressure on Polarographic Parameters of Metal Complex Ion (金屬錯이온의 폴라로그래피的 파라미터에 미치는 壓力의 影響)

  • Heung Lark Lee;Zun Ung Bae;Jong Hoon Yun
    • Journal of the Korean Chemical Society
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    • 제31권5호
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    • pp.444-451
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    • 1987
  • The dependence of polarographic parameters on the pressure for the reduction of copper(II), cadmium(II), and zinc(II) complex ions with ethylenediamine, propylenediamine, and diethylenetriamine has been studied. In this study the dropping mercury electrode, the mercury pool electrode, and helix type of platinum wire were used as the working, the reference, and the auxilary electrode, respectively. With increasing the pressure from 1 atmosphere to 1,500 atmospheres, the reduction half-wave potentials of metal complex ions are shifted to the negative values and the diffusion currents become considerably larger, in keeping with the theory on the change of the physical properties of the electrolytic solution such as the density, the viscosity, the dielectric constant, and the electrical conductance, etc. The slope values of the logarithmic plot are increased with increasing the pressure, which indicates the more irreversible reduction. The temperature coefficients of diffusion current observed over the range of the temperature from 25$^{\circ}$C to 35$^{\circ}$C are about two percentage with increasing the pressure, therefore the polarographic reduction under the high pressure is controlled by diffusion. The linear relationships between diffusion current and concentration of metal complex ions are established over all pressure range.

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Room-Temperature Deposition of ZnO Thin Film by Pulsed Vacuum Arc and Effect of Oxygen Gas Ratio on Its Electrical Properties (펄스형 진공 아크법에 의한 ZnO 박막의 상온합성 및 이의 전기적 특성에 미치는 산소분압비의 영향)

  • Shin Min-Geun;Byon Eungsun;Lee Sunghun;Kim Do-Geun;Jeon Sang-Jo;Koo Bon Heun
    • Journal of the Korean institute of surface engineering
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    • 제38권5호
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    • pp.193-197
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    • 2005
  • Highly c-axis oriented Zinc oxide (ZnO) films were successfully deposited at room temperature by oxygen ion-assisted pulsed filtered vacuum arc. The effect of oxygen gas ratio ($O_{2}/O_{2}+Ar$ on the preferred orientation, surface morphology and resistivity of the ZnO films were investigated. Highly crystalline ZnO films with (002) orientation were obtained at over $13\%$ of oxygen gas ratio. Increasing oxygen gas ratio up to $80\%$ was found to improve crystallinity of the films. From hall measurements, it was found that the film has n-type characteristic and carrier concentration and its mobility were closely related with oxygen gas ratio. Minimal resistivity of $3.6{\times}10^{-3}{\Omega}{\cdot}cm$ was obtained in the range of $20\%$ to $40\%$ of oxygen gas ratio.