Journal of Surface Science and Engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Room-Temperature Deposition of ZnO Thin Film by Pulsed Vacuum Arc and Effect of Oxygen Gas Ratio on Its Electrical Properties

펄스형 진공 아크법에 의한 ZnO 박막의 상온합성 및 이의 전기적 특성에 미치는 산소분압비의 영향

  • Shin Min-Geun (Changwon National University) ;
  • Byon Eungsun (Surface Technology Research Center, Korea Institute of Machinery and Materials) ;
  • Lee Sunghun (Surface Technology Research Center, Korea Institute of Machinery and Materials) ;
  • Kim Do-Geun (Surface Technology Research Center, Korea Institute of Machinery and Materials) ;
  • Jeon Sang-Jo (Department of Shipbuilding, Defense Quality Assurance Agency) ;
  • Koo Bon Heun (Changwon National University)
  • 신민근 (창원대학교 나노 신소재공학부) ;
  • 변응선 (한국기계연구원 표면기술연구센터) ;
  • 이성훈 (한국기계연구원 표면기술연구센터) ;
  • 김도근 (한국기계연구원 표면기술연구센터) ;
  • 전상조 (국방품질관리소 함정분소) ;
  • 구본흔 (창원대학교 나노 신소재공학부)
  • Published : 2005.10.01
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Abstract

Highly c-axis oriented Zinc oxide (ZnO) films were successfully deposited at room temperature by oxygen ion-assisted pulsed filtered vacuum arc. The effect of oxygen gas ratio ($O_{2}/O_{2}+Ar$ on the preferred orientation, surface morphology and resistivity of the ZnO films were investigated. Highly crystalline ZnO films with (002) orientation were obtained at over $13\%$ of oxygen gas ratio. Increasing oxygen gas ratio up to $80\%$ was found to improve crystallinity of the films. From hall measurements, it was found that the film has n-type characteristic and carrier concentration and its mobility were closely related with oxygen gas ratio. Minimal resistivity of $3.6{\times}10^{-3}{\Omega}{\cdot}cm$ was obtained in the range of $20\%$ to $40\%$ of oxygen gas ratio.

Keywords

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