• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 E
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• pp.1678-1680
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• 1997

The pulsed power with the high voltage and current can be used to the fields of high speed pulses of energy in different forms such as electric current and voltage, electron beam, ion beam, x-rays, gamma rays, heat, magnetics fields, sound and shock waves. This paper is directed mainly at electrical engineers working on production and practical application of high speed pulsed power with high voltage and current.

• 한국정밀공학회지
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• 제28권1호
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• pp.19-23
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• 2011

Recently, focused ion beam (FIB) applications have been investigated for the modification of VLSI circuit, the MEMS processing, and the localized ion doping, A multi aperture FIB system has been introduced as the demands of FIB applications for high speed and large area processing increase. A liquid metal ion source has problems, a large angular divergence and a metal contamination into a substrate. In this study, a gas ion source was introduced to replace a liquid metal ion source. The gas ion source generated inductively coupled plasma (ICP) in a quartz tube (diameter: 45 mm). Ar gas fed into the quartz was ionized by a 2 turned radio frequency antenna. The Ar ions were extracted by 2 extraction grids. The maximum extraction voltage was 10 kV. A numerical simulation was used to optimize the design of extraction grids and to predict an ion trajectory. As a result, the maximum ion current density was 38 $mA/cm^2$ and the spread of ion energy was 1.6 % for the extraction voltage.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.283-283
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• 2010

The liquid metal ion sources(LMIS) in FIB system have many advantages of high current density, high brightness and low ion energy spread. Most FIB systems use LMIS because the ion beam spot size of LMIS is smaller than other ion sources. LMIS is basically emitted by an extractor but the new electrode called the suppressor is able to control the emission current. We investigated characteristics LMIS with a suppressor, the function of the suppressor in LMIS, the change of the electric field by the suppressor and the advantages of using the suppressor. The characteristics of the threshold voltage and current-voltage (I-V) were observed under the varying extracting voltage with floated suppressor voltage, and under the varying suppressor voltages with fixed extractor voltage. We also simulated LMIS with the suppressor through CST(Computer Simulation Technology). The emission current increases as the suppressor voltage decreases because the suppressor voltage which restrains the electric field goes down, The threshold voltage increases as the suppressor voltage increases. We can explain characteristics and functions of LMIS with a suppressor using the electric field.

• 한국산업보건학회지
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• 제33권4호
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• pp.439-446
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• 2023

Objectives: The aims of this study are to investigate how X-rays are emitted to surrounding parts during the ion implantation process, to analyze these emissions in relation to the properties of the ion implanter equipment, and to estimate the resulting exposure dose. Eight ion implanters equipped with high-voltage electrical systems were selected for this study. Methods: We monitored X-ray emissions at three locations outside of the ion implanters: the accelerator equipped with a high-voltage energy generator, the impurity ion source, and the beam line. We used a Personal Portable Dose Rate and Survey Meter to monitor real-time X-ray levels. The SX-2R probe, an X-ray Features probe designed for use with the Radiagem^TM meter, was also utilized to monitor lower ranges of X-ray emissions. The counts per second (CPS) measured by the meter were estimated and then converted to a radiation dose (𝜇Sv/hr) based on a validated calibration graph between CPS and μGy/hr. Results: X-rays from seven ion implanters were consistently detected in high-voltage accelerator gaps, regardless of their proximity. X-rays specifically emanated from three ion implanters situated in the ion box gap and were also found in the beam lines of two ion implanters. The intensity of these X-rays did not show a clear pattern relative to the devices' age and electric properties, and notably, it decreased as the distance from the device increased. Conclusions: In conclusion, every gap, in which three components of the ion implanter devices were divided, was found to be insufficiently shielded against X-ray emissions, even though the exposure levels were not estimated to be higher than the threshold.

• Progress in Superconductivity
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• 제3권2호
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• pp.168-171
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• 2002

We have demonstrated ramp-edge Josephson junctions using high temperature superconductors without depositing artificial barriers. We fabricated a surface barrier formed naturally during an ion beam etching process and the annealing under the oxygen atmosphere. The experimental results imply that the barrier natures such as the resistivity are varied by the annealing conditions and the ion milling conditions including the beam voltages. Thus, the ann eating and etching conditions should be optimized to obtain excellent junction properties. In optimizing the fabricating factors, the interface-controlled junctions showed resistively shunted junctions like current-voltage characteristics and an excellent uniformity. These junctions exhibited a spread ($1\sigma$) of $I_{c}$ is 10% fur chips containing 7 junctions at 50K.K.

• 한국진공학회지
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• 제8권2호
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• pp.121-126
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• 1999

Cu thin film was deposited by a self-ion assisted beam source (SIAB) and the assessment of the Cu films was given. Some characteristics of the source and the experimental procedure are described at various conditions such as total power, ionization efficiency, and ion current vs. deposition rate. The dependence of crystalline structure, impurity concentration, and resistivity of the Cu films deposited by SIAB on acceleration voltage are discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.530-531
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• 2013

3 MeV protonirradiated SrTiO3 (STO) single crystal exhibits a blue and green mixed luminescence. However, the same proton irradiated STO deposited with very thin Pt layer does not show any luminescence. This Pt layer involved in preventing the damage caused by arcingthat comes from tens of kV surface voltage build-up due to secondary electron induced charge up at the surface of insulator during ion beam irradiation. It implies that luminescence of ion irradiated STO originated from the modified STO surface layer caused by arcing rather than direct ion beam irradiation effect. Atmospheric pressure plasma, a simple and cost-effective method, treated STO also exhibits the same kind of blue and green mixed luminescence as the ion beam treated STO, because this plasma also creates a surface damage layer by arcing.

• 한국진공학회지
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• 제12권2호
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• pp.136-143
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• 2003

본 논문은 비질량분리형 이온빔증착법에 이용하기 위한 고순도의 고주파 스퍼터타입 이온소스에 대한 특성을 평가했다. 고주파 구리 코일과 고순도 (99.9999 %)의 구리 타겟으로 이루어진 이온소스에 대한 기본적인 특성과 ULSI금속배선용 구리 박막으로의 응용가능성에 대해서 고찰하였다. 구리 타겟에 걸어주는 전압에 따른 구리 타겟에 흐르는 전류 특성을 고주파 전원 또는 아르곤 가스 압력을 변화시키면서 특성을 평가한 후 구리박막제작을 위한 조건에 대해서 고찰하였다. 박막 증착을 위한 기본적인 조건으로써, 타겟의 전압 -300 V와 고주파 전원 240 W, 그리고 아르곤 압력 9 Pa이 정해졌으며, 이 같은 조건에서 기판 바이어스 -50 V에서 증착된 구리 박막의 비저항값은 1.8 $\pm$ 0.1 $mu\Omega$cm로 이는 구리 벌크의 저항값(1.67 $\pm$ 0.1 $\mu\Omega$cm)에 근접한 값임을 알 수 있었다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 Proceedings ICPE 98 1998 International Conference on Power Electronics
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• pp.436-441
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• 1998

This paper proposes an novel dc power supply using modified multilevel ac/dc converter. The output voltage of the power supply can be disconnected from and reapplied to the load rapidly. Therefore the power supply is suitable for a load having frequent short circuit such as ion source. The proposed scheme improves the performance, efficiency, and reliability and reduces the cost of the conventional power supply system for an ion beam acceleration.

• 대한전자공학회논문지
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• 제26권12호
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• pp.1995-2000
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• 1989

The ion beam system of 20keV C-W (Cockroft Walton) type composed of the AuGe alloy LMIS(Liquid Metal Ion Source) has been designed and constructed. For the fabrication of the ohmic contact to the n-GaAs, the ion beam extracted from the AuGe alloy source was implanted into the n-GaAs, and it was measured by contact resistivity. The stable AuGe ion beam(2.5\ulcorner/cm\ulcorner was obtained at the extraction voltage of 14.5kV. The measurements of the contact resistivity were done by the TLM (Transmission Line Model) method and the specific contact resistivity was found to be 2.4x10**-5 \ulcornercm\ulcornerfor the implanted sample by the 1.9x10**20/cm**3 and the annealed sample at 30\ulcorner for 2 min.