• 한국의학물리학회지:의학물리
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• 제12권2호
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• pp.141-146
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• 2001

치료효과를 보증하기 위해서는 조사선량의 5% 이내의 선량오차가 방사선생물학적 의미가 높은 것으로 잘 알려져 있다. 따라서 종양치료를 위한 강내조사 선원이나 선형가속기의 고선량율의 선량 평가는 정확하고 안정적 평가가 이루어져야 된다. 선량을 평가 교정하기 위해 전리함의 교정 인정기관의 교정상수를 유지하기 위해 선진국에서는 기하학적으로 고정된 표준선원과 전리함의 사용을 오래 전부터 권고해 왔다. 본 연구는 전리함의 감도 변화를 측정할 수 있는 Sr-90 시험선원을 이용한 임의의 기준 전리함의장기간 안정성이 1.00$\pm$0.01 의 오차 범위에 있음을 알 수 있었고, 고선량률 원격강내조사선원인 Co-60 선원에 대한 기준전리함의 출력선량에 대한 임상측정용 전리함의 출력선량은 평균 0.997 $\pm$ 0.01의 오차범위에서 평가될 수 있었으며, 최대오차는 예상선량에 -2.5% 였다. 이 실험을 통해 반감기가 긴 시험선원을 이용하여 임상 측정용 공기전리함의 안정적 성능을 유지할 수 있음을 알 수 있다.

• 대한전자공학회논문지
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• 제26권12호
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• pp.1995-2000
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• 1989

The ion beam system of 20keV C-W (Cockroft Walton) type composed of the AuGe alloy LMIS(Liquid Metal Ion Source) has been designed and constructed. For the fabrication of the ohmic contact to the n-GaAs, the ion beam extracted from the AuGe alloy source was implanted into the n-GaAs, and it was measured by contact resistivity. The stable AuGe ion beam(2.5\ulcorner/cm\ulcorner was obtained at the extraction voltage of 14.5kV. The measurements of the contact resistivity were done by the TLM (Transmission Line Model) method and the specific contact resistivity was found to be 2.4x10**-5 \ulcornercm\ulcornerfor the implanted sample by the 1.9x10**20/cm**3 and the annealed sample at 30\ulcorner for 2 min.

• 한국초전도ㆍ저온공학회논문지
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• 제17권2호
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• pp.36-40
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• 2015

Electron cyclotron resonance (ECR) ion source is an essential component of heavy-ion accelerator. For a given design, the intensities of the highly charged ion beams extracted from the source can be increased by enlarging the physical volume of ECR zone [1]. Several models for ECR ion source were and will be constructed depending on their operating conditions [2-4]. In this paper three simulation models with 3, 4 and 6 solenoid system were built, but it's not considered anything else except the number of coils. Two groups of optimization analysis are presented, and the evolution strategy (ES) is adopted as an optimization tool which is a technique based on the ideas of mutation, adaptation and annealing [5]. In this research, the volume of ECR zone was calculated approximately, and optimized designs for ECR solenoid magnet system were presented. Firstly it is better to make the volume of ECR zone large to increase the intensity of ion beam under the specific confinement field conditions. At the same time the total volume of superconducting solenoids must be decreased to save material. By considering the volume of ECR zone and the total length of solenoids in each model with different number of coils, the 6 solenoid system represented the highest coil performance. By the way, a certain case, ECR zone volume itself can be essential than the cost. So the maximum ECR zone volume for each solenoid magnet system was calculated respectively with the same size of the plasma chamber and the total magnet space. By comparing the volume of ECR zone, the 6 solenoid system can be also made with the maximum ECR zone volume.

• 분석과학
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• 제5권2호
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• pp.169-176
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• 1992

금속시료의 미량원소를 분석하기 위하여 jet형과 글로우방전 이온원을 제작하여 질량 분석기와 연결시킨 후 상대이온세기와 검출한계를 측정하였다. Jet형 이온원으로 구리시료의 시료 손실속도를 측정하였을 때 가스흐름속도가 0.01L/min이었을 때 0.23 mg/min이고 가스흐름이 없을 때는 0.11 mg/min이었다. 그러나 구리의 이온세기를 측정하였을 때는 두 이온원에서 큰 차이가 없었다. 여섯 개의 동합금시료의 검정곡선으로부터 구한 각 원소의 상대이온세기는 철의 0.57부터 크롬의 3.5 범위였다. Jet형 이온원으로 4mA, 1000V 방전시 순수 구리시료의 각 원소에 대한 검출한계는 0.9 ppm에서 2 ppm 수준으로 나타났다.

• Nuclear Engineering and Technology
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• 제23권4호
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• pp.438-443
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• 1991

각확산도가 작은 $He^+$ 이온빔 인출전류를 최대로 얻기 위하여 Duoplasmatron 이온원의 동작특성을 조사하였다. 이온원의 기체압력, 아크전류. 전자석 전류, 인출전압등을 변화시키면서 인출되는 $He^+$ 이온빔 전류의 변화를 관찰하였다. 열음극으로는 Ni망위에 BaO와 SrO의 혼합물을 코팅한 산화물 필라멘트를 사용하였으며, 그것의 평균수명은 약 100시간이었다. 인출전류는 아크전류에 선형적으로 비례했다 이온원 전자석전류를 증가시킴에 따라 인출전류는 증가하였지만 빔의 각확산도가 커졌다. 최대의 인출전류는 0.084 Torr의 이온원 압력에서 얻어졌다. 인출전류는 이론에서와 마찬가지로 인출전압의 3/2승에 비례하였다. 5.72 kV의 인출전압에서는 최적인출조건하에서 50 $\mu$A의 인출전류가 얻어졌다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.111-111
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• 2007

Further scaling the semiconductor devices down to low dozens of nanometer needs the extremely shallow depth in junction and the intentional counter-doping in the silicon gate. Conventional ion beam ion implantation has some disadvantages and limitations for the future applications. In order to solve them, therefore, plasma source ion implantation technique has been considered as a promising new method for the high throughputs at low energy and the fabrication of the ultra-shallow junctions. In this paper, we study about the effects of DC bias and base pressure as a process parameter. The diluted mixture gas (5% $PH_3/H_2$) was used as a precursor source and chamber is used for vacuum pressure conditions. After ion doping into the Si wafer(100), the samples were annealed via rapid thermal annealing, of which annealed temperature ranges above the $950^{\circ}C$. The junction depth, calculated at dose level of $1{\times}10^{18}/cm^3$, was measured by secondary ion mass spectroscopy(SIMS) and sheet resistance by contact and non-contact mode. Surface morphology of samples was analyzed by scanning electron microscopy. As a result, we could accomplish the process conditions better than in advance.

• 대한금속재료학회지
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• 제46권1호
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• pp.39-43
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• 2008

PSII (Plasma Source Ion Implantation) using high density pulsed ICP source was employed to implant oxygen ions in Si wafer. The PSII technique can achieve a nominal oxygen dose of $3 {\times}10^{17}atoms/cm^2$ in implantation time of about 20min. In order to prevent oxidation of SOI layer during high temperature annealing, the wafer was capped with $2,000{\AA}$ $Si_3N_4 $ by PECVD. Cross-sectional TEM showed that continuous $500{\AA}$ thick buried oxide layer was formed with $300{\AA}$ thick top silicon layer in the sample. This study showed the possibility of SOI fabrication using the plasma source ion implantation with pulsed ICP source.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.220-220
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• 1999

In plasma source ion implantation, the target is immersed in the plasma and repetitively biased by negative high voltage pulses to implant the extracted ions from plasma into the surface of the target material. In this way, the problems of line-of-sight implantation in ion-beam ion implantation technique can be effectively solved. In addition, the high dose rate and simplicity of the equipment enable the ion implantation a commercially affordable process. In this work, plasma source ion implantation technique was used to improve the wear resistance of Co-cemented WC. which has been extensively used for high speed tools. Nitrogen and carbon ions were implanted using the pulse bias of -602kV, 25 sec and at various implantation conditions. The implanted samples were examined using scanning Auger electron spectroscopy and XPS to investigate the depth distributions of implanted ions and to reveal the chemical state change due to the ion implantation. The implanted ions were found to have penetrated to the depth of 3000$\AA$. The wear resistance of the implanted samples was measured using pin-on-disc wear tester and the wear tracks were examined with alpha-step profilometer.

• 한국진공학회지
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• 제4권S2호
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• pp.106-114
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• 1995

Direct implantation of metallic ion species has been employed in surface processing of industrial components and tools with very encouraging improvements in recent years. In spite of high technicla effectiveness, this new surface processing technique has not been extensively accepted by industries mainly because of high cost(capital and operating) compared with other competitive surface processing techniques. High current and large implantation area with eliminating the mass analyzer and the beam-scanning unit make metal vapor vacuum are(MEVVA)source ion implantation versatile, simple and cheap to operate and well suited to commercial surface processing. In this paper, the recent development of MEVVA source ion implantation technique ar Beijing Normal University has been reviewed and the results of production trials of several industrial components and tools implanted by MEVVA source ion implantation have been presented and discussed.

• 전기의세계
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• 제14권3호
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• pp.28-33
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• 1965

This experiment is based on "the feasible improvement studies for an eliminating device of the static electricity which applies the ionizing effect of beta radiation." In order to accomplish this object, the following problems were necessarily considered to investigate and to determine. The efficiency of the elimination of static electricity was determined by means of measuring the ion current between electrically charged plates with micro-ammeter. The effects of various factors, i.e., the distance between charged plate and radiation source, the activity of radiation source, the electric otential and the area of the charged plate, the shape of the source housing, the lining of backscattering material (Pb) on the source housing surface and blowing of ionized air, on the static electricity eliminating efficiency were studied. The beta radiation sources used in this experiment were S$^{35}$ and Sr$^{90}$ -Y$^{90}$ . It was revealed that ion current increased with source activity, the electric potential and area of the plates, the lead (Pb) lining on the surface of the source housing and the velocity of the ionized air blowing. As one could expect the S$^{35}$ was more effective to increase the ion current since it is known to be a higher specific ionization source than Sr$^{90}$ -Y$^{90}$ . The detailed result and performance of the eliminating device of the static electricity are described here.ibed here.