• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.129-129
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• 1998

Most of the surface/interface analysis tools have limited depth profiling c capability in terms of the profiling range and the depth resolution. However, M MEIS can profile the surface and subsurface composition and structure q quantitatively and non-destructively with atomic layer depth resolution. I In this presentation, the MEIS system developed at KRISS will be briefly d described with an introduction on the principle of MEIS. Recent MEIS r results on the surface and interface composition and structural change due to i ion bombardment will be presented for preferential sputtering of T:없Os and d damage depth profiles of SHooD, Pt(l11), and Cu(l1D due to Ar+ ion b bombardment. Direct observation of strained Si lattices and its distribution i in the SHool)-SiCh interface and the initial stage of Co growth on Pt(l11) w will be reported. H surfactant effects on epitaxial growth of Ge on Si(ooD w will be discussed with STM results from SND.

• 한국분말재료학회지
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• 제23권2호
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• pp.170-176
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• 2016

Lithium-ion batteries (LIBs) are rapidly improving in capacity and life cycle characteristics to meet the requirements of a wide range of applications, such as portable electronics, electric vehicles, and micro- or nanoelectro-mechanical systems. Recently, atomic layer deposition (ALD), one of the vapor deposition methods, has been explored to expand the capability of LIBs by producing near-atomically flat and uniform coatings on the shell of nanostructured electrodes and membranes for conventional LIBs. In this paper, we introduce various ALD coatings on the anode, cathode, and separator materials to protect them and improve their electrochemical and thermomechanical stability. In addition, we discuss the effects of ALD coatings on the three-dimensional structuring and conduction layer through activation of electrochemical reactions and facilitation of fluent charge collection.

• Bulletin of the Korean Chemical Society
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• 제24권1호
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• pp.23-26
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• 2003

Titanium acetylacetonate was used in the construction of a PVC-based membrane electrode. This sensor shows very good selectivity for iodide ion over a wide variety of common inorganic and organic anions. It exhibits Nernstian behavior with a slope of 59.1 mV per decade. The working concentration ranges of the sensor are with a detection limit of $3.0\;{\times}\;10^{-6}\;M$. The response time of the sensor is very fast (<8 s), and can be used for at least twelve weeks in the pH range of 4.0-9.2. The best performance was obtained with a membrane composition of 30% PVC, 65% dibutylphthalate, 3% titanium acetylacetonate and 2% hexadecyltrimethylammonium bromide. The proposed sensor was successfully applied as an indicator electrode for titration of iodide with silver ion.

• International Journal of Oral Biology
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• 제42권4호
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• pp.197-201
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• 2017

A novel method for the detection of hydrogen peroxide in aqueous solution was developed via reaction between $H_2O_2$, trivalent titanium ion ($Ti^{3+}$) and 4-(2-thiazolylazo) resorcinol (TAR), resulting in a ternary complex with a maximum UV absorbance at 530 nm. The CE detection of $H_2O_2$ was fast, sensitive and cost-effective without pretreatment procedures. $H_2O_2$ was detected within 15 min at 1 to $100{\mu}M$ range with the lowest detection limit at $1.0{\mu}M$. Under the optimized CE conditions, the concentration of $H_2O_2$ in coffee or tea extract was quantitatively determined. Our results show that CE detection of the ternary complex of $H_2O_2-Ti^{3+}$-TAR has potential applications for the detection of $H_2O_2$ in aqueous sources.

• Bulletin of the Korean Chemical Society
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• 제33권12호
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• pp.3971-3976
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• 2012

A simple method was developed for the analysis of seven stilbene-type fluorescent whitening agents (FWAs) in paper materials by ion-pair reversed-phase high-performance liquid chromatography with fluorescence detection. These stilbene-type FWAs included two disulfonate, two tetrasulfonate, and three hexasulfonate compounds. After optimization of chromatographic conditions, the FWAs were satisfactorily separated using a reversed-phase column (RP-18) with the following isocratic mobile phase: methanol-water (60:40) containing 17.5 mM TBABr and 10 mM citrate buffer (pH = 7.0). The calibration plot was linear in the range from 5 to 500 ng/mL for two disulfo-FWAs and from 1 to 500 ng/mL for the other five FWAs. Precision levels of the calibration curve as indicated by RSD of response factors were 1.2 and 8.1%. Limits of quantitation (LOQ) ranged from 1.2 to 11 ng/mL.

• Bulletin of the Korean Chemical Society
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• 제27권11호
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• pp.1832-1838
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• 2006

The present paper is focused on sorption concentration of silver (I) on some complex-forming ion exchangers in the initial thiocyanate form and subsequent determination of Ag(I) in the phase of anion exchanger AN-25 by diffuse reflectance spectroscopy. The sorption and kinetic characteristics of the sorbents were investigated. The apparent stability constants of thiocyanate silver complexes in the ion exchanger phase were calculated. The sorption-spectroscopic method is proposed for Ag(I) determination in aqueous solutions. The calibration curve is linear in the concentration range of 10-200 mg/L (sample volume is 10.0 mL) and the detection limit is 2 $\mu$g/mL. The presence of $Na^+,\;K^+,\;Mg^{2+}$ (macrocomponents) as well as of Ni (II), Co (II), Cu (II) do not hinder the determination of silver (I).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.17-20
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• 2000

This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. Triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\_$p/ (Projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 A
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• pp.12-15
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• 1993

The correlation between electrical conduction and dielectric relaxation properties of copper ion conducting glasses is discussed. The glasses were prepared in the system $CuI-Cu_2S-Cu_2O-MoO_3$ using rapid quenching technique. These glasses have high ionic conductivities at room temperature in the range of $10^{\circ}$[S/m], and the conductivities increase with increasing CuI content. The activation energies for conduction are 0.26 - 0.57 eV. The dielectric relaxation times are 1 - 10uS, and the activation energy for ion jumping are 0.18 - 0.41eV. It is shown that the tendency of conduction properties depending on composition of the glass is similar those of dilectric relaxation.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2015년도 춘계학술대회 논문집
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• pp.125-125
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• 2015

Ti-Al-Cr-N thin layer was prepared on Fe-Si thin sheet by arc ion plating to improve corrosion and mechanical properties. The compositions ratios of Fe : Cr : Al : Ti : Si : N of the thin layers at $500^{\circ}C$ was 1.24 : 0.56 : 36.82 : 32.72 : 0.59 : 28.07 [wt.%], respectively. The higher arc ion plating temperature was, the higher corrosion resistance and nano-hardness were observed due to chromium content. Corrosion potential and corrosion rate in artificial sea water of the coating layer were in the range of $-39mV_{SHE}$ and $2mA/cm^2$, respectively. Passivity was not observed in the artificial sea water. Nano-hardnesses of the thin layers was increased by adding Cr from 23.6 to 25.8 [GPa]. The friction coefficients and fatigue limits of the layers were 0.388, 0.031, respectively.

• 한국표면공학회지
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• 제27권4호
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• pp.234-240
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• 1994

A large area impurity doping method for poly-Si TFT LCD has been developed. The advantage of this method is the doping of impurities into Si over a large area without mass separation and beam scanning. Phosphorus diluted in hydrogen was discharged by RF(13.56MHz) power and ions from discharged gas were accelerated by DC acceleration voltage and were implanted into deposited Si films. The annealing characteristic of this method was similar to that of the ion implantation method in the low doping concentration. Three mechanisms were evolved in the annealing characteristics of phosphorus doped Si films. Point defects annihilation and the retrogradation of dopant atoms at grain boundaries as a result of grain growth played a major role at low and high annealing temperature, respectively. However, due to the dopant segregation, the reverse annealing range existed at intermediate annealing temperature.