• 폴리머
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• 제26권2호
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• pp.153-159
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• 2002

본 연구에서는 지하수 중의 NO$_{3}^{-}$ 이온을 선택적으로 흡착 제거시키기 위하여 E-beam 전조사법에 의해 GMA 단량체를 폴리프로필렌 섬유 기재에 그라프트 반응시켜 PP-g-GMA 공중합체를 제조한 후 아민화 반응을 통하여 강염기성 APP-g-GMA 음이온교환수지를 합성하였다. 공중합체의 그라프트율 및 TMA에 의한 아민화율은 반응온도가 증가할수록 증가하였으며, $60^{\circ}C$일 때 각각 133%, 88% 최대치를 나타내었고, 이때의 팽윤율과 이온교환용량은 각각 86%, 2.5 meq/g으로 IMAC HP555, Amberlite IRA 400와 같은 상용 이온교환수지 보다 높게 나타났다. $NO_3;^-$ 이온흡착의 최적 조건은 pH 5~6이었으며, trimethylammonium 기를 갖는 -Cl형의 APP-g-GMA 이온교환체가 가장 높은 선택 흡착성을 나타냈다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.398-398
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• 2007

Most recently, the Liquid Crystal (LC) aligning capabilities achieved by ion beam exposure on the diamond-like carbon (DLC) thin film layer have been successfully studied. The DLC thin films have a high mechanical hardness, a high electrical resistance, optical transparency and chemical inertness. Nitrogen doped Diamond Like Carbon (NDLC) thin films exhibit properties similar to those of the DLC films and better thermal stability than the DLC films because C:N bonding in the NDLC film is stronger against thermal stress than C:H bonding in the DLC thin films. Moreover, our research group has already studied ion beam alignment method using the NDLC thin films. The nematic liquid crystal (NLC) alignment effects treated on the SiNx thin film layers using ion beam irradiation for three kinds of N rations was successfully studied for the first time. The SiNx thin film was deposited by plasma-enhanced chemical vapor deposition (PECVD) and used three kinds of N rations. In order to characterize the films, the atomic force microscopy (AFM) image was observed. The good LC aligning capabilities treated on the SiNx thin film with ion beam exposure for all N rations can be achieved. The low pretilt angles for a NLC treated on the SiNx thin film with ion beam irradiation were measure.

• Nuclear Engineering and Technology
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• 제54권7호
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• pp.2408-2417
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• 2022

The nanoindentation behavior of P92 steel with thermomechanical treatment under 3.5 MeV Fe¹³⁺ ion irradiation at room temperature, 400 and 700 ℃ was investigated. Pop-in behavior is observed for all the samples with and without irradiation at room temperature, while the temperature dependence of pop-in behavior is only observed in irradiated samples. The average load and penetration depth at the onset of pop-in increase as the irradiation temperature increases, in line with the results of the maximum shear stress. Irradiation induced hardening is exhibited for all irradiated samples, but there is a significant reduction in the hardness of sample irradiated at 700 ℃ in comparison to the samples irradiated at room temperature and 400 ℃. The ratio of hardness to elastic modulus for all samples decreases with increasing penetration depth except for samples at 700 ℃. With the increasing of irradiation temperature, the ratio of the irreversible work to the total work gradually decreases. In contrast, it increases for samples without irradiation.

• 공업화학
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• 제10권1호
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• pp.30-34
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• 1999

클로로타노닐과 엔도슬판을 UV 조사, pH 3.0에서의 UV조사, 그리고 3.5% 염수에서 UV조사를 하여 광분해 거동을 연구하였다. 농약의 광분해과정은 가스크로마토그래프, 총유기탄소, 그리고 이온크로마토그래프를 사용하였다. Low pressure mercury multilamp($8W{\times}6$)를 반응기에 잠수시켜 실험을 하였으며, 초기농도는 10 ppm으로 하였다. 클로로타노닐은 UV 조사, pH 3.0조건에서 UV조사, 그리고 3.5% 염수조건에서 UV조사 조건에서 반응시간 30분에 거의 광분해되었다. 자외선조사에서 엔도슬판-${\alpha}$는 38%, 엔도슬판-${\beta}$는 25% 분해되었다. 엔도슬판-${\alpha}$(83%)는 자외선조사에서 65%, pH 3.0의 자외선조사에서 70%, 35% 염수의 자외선조사에서는 75% 분해되었다. 엔도슬판(16%)는 자외선조사에서 80%, pH 3.0의 자외선조사에서는 98%, 3.5% 염수의 자외선조사에서는 90% 분해되었다.

• 한국환경농학회지
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• 제19권1호
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• pp.58-61
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• 2000

묵은 파와 시금치 종자에 저선량 ${\gamma}$선을 조사하여 종자 발아율과 발아종자의 생리활성 변화를 관찰하였다. 시금치 종자의 발아율은 대조구에 비해 저선량 조사구에서 증가하는 경향을 보였고 특히 2 Gy와 1 Gy에서 효과적이였으나 파종자에서는 1 Gy 조사구만이 대조구에 비해 높은 발아율을 보였다. 저선량 ${\gamma}$선이 조사된 파와 시금치종자의 ion leakage 조사에서는 대조구에 비해 저선량 ${\gamma}$선 조사구에서 감소하는 경향을 보였는데 이는 특히 배양 초기 단계에서 뚜렸하였다. 전분 분해 또한 ${\gamma}$선 조사에 의해 촉진되었고 저선량의 γ선은 glutamic acid의 decarboxylation 으로 인해 종자의 활력을 유지하는 잇점이 있는 것으로 나타났다.

• Journal of Radiation Protection and Research
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• 제38권4호
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• pp.166-171
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• 2013

While high-dose ionizing radiation results in long term cellular cytotoxicity, chronic low-dose (<0.2 Gy) of X- or ${\gamma}$-ray irradiation can be beneficial to living organisms by inducing radiation hormesis, stimulating immune function, and adaptive responses. During chronic low-dose-rate radiation (LDR) exposure, whole body of mice is exposed to radiation, however, it remains unclear if LDR causes changes in gene expression of the whole brain. Therefore, we aim to investigate expressed genes (EGs) and signaling pathways specifically regulated by LDR-irradiation ($^{137}Cs$, a cumulative dose of 1.7 Gy for total 100 days) in the whole brain. Using microarray analysis of whole brain RNA extracts harvested from ICR and AKR/J mice after LDR-irradiation, we discovered that two mice strains displayed distinct gene regulation patterns upon LDR-irradiation. In ICR mice, genes involved in ion transport, transition metal ion transport, and developmental cell growth were turned on while, in AKR/J mice, genes involved in sensory perception, cognition, olfactory transduction, G-protein coupled receptor pathways, inflammatory response, proteolysis, and base excision repair were found to be affected by LDR. We validated LDR-sensitive EGs by qPCR and confirmed specific upregulation of S100a7a, Olfr624, and Gm4868 genes in AKR/J mice whole brain. Therefore, our data provide the first report of genetic changes regulated by LDR in the mouse whole brain, which may affect several aspects of brain function.

• 한국전기전자재료학회논문지
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• 제19권1호
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• pp.7-12
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• 2006

Local minority carrier lifetime control by means of particle irradiation is an useful technology for Production of modern silicon Power devices. Crystal damage due to ion irradiation can be easily localized by choosing appropriate irradiation energy and minority tarrier lifetime can be reduced locally only in the damaged layer. In this work, proton irradiation technology was used for improving the switching characteristics of a un diode. The irradiation was carried out with various energy and dose condition. The device was characterized by current-voltage, capacitance-voltage, and reverse recovery time measurements. Forward voltage drop was increased to 1.1 V at forward current of 5 A, which was $120\%$ of its original device. Reverse leakage current was 64 nA at reverse voltage of 100 V, and reverse breakdown voltage was 670 V which was the same voltage as original device without irradiation. The reverse recovery time of device was reduced to about $20\%$ compared to that of original device without irradiation.

• 열처리공학회지
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• 제25권6호
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• pp.279-282
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• 2012

$SnO_2$ thin films were prepared on the Si substrate by radio frequency (RF) magnetron sputtering and then surface of the films were irradiated with intense Ar ion beam to investigate the effect of Ar ion irradiation on the properties and hydrogen gas sensitivity of the films. From atomic force microscope observation, it is supposed that intense Ar bombardments promote rough surface and increase gas sensitivity of $SnO_2$ films for hydrogen gas. The films that Ar ion beam irradiated at 6 keV show the higher sensitivity than the films were irradiated at 3 keV and 9 keV. These results suggest that the $SnO_2$ thin films irradiated with optimized Ar ion beam are promising for practical high-performance hydrogen gas sensors.

• 한국자원식물학회지
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• 제18권1호
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• pp.169-178
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• 2005

중이온빔$(^{20}Ne)$을 담배 식물체에 조사(irradiation)하여 식물체의 생장과 DNA의 변이에 미치는 영향을 검토하였다. 발아율과 초장은 조사선 량이 증가함에 따라 감소하였다. 반면 $50Gy\~10Gy$의 저선량에서 추대와 개화가 촉진되어 발육은 오히려 촉진되었다. 총 100개의 primer를 이용하여 RAPD분석한 결과, 59개의 primer에서 총 336개의 DNA단편이 증폭되었고, 1개의 primer에서 중이온빔 조사처리구에서만 출현하는 DNA단편이 나타났다. AFLP분석 결과, 개체 특이적인 DNA단편은 나타난 반면 중이온빔 처리구 특이적인 DNA 단편은 관찰되지 않았다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.185-185
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• 2009

The aligned liquid crystals (LCs) display on SiNx thin films using ion-beam (IB) irradiation was studied with controllability ofpretilt angle depending on incident energies of the IB. Plasma-enhanced chemical vapor deposition (PECVD) was used to orient the LCs on SiNx alignment films. The LCs alignment property for the SiNx thin films were observed to verify the practical application potential (figure1). A good LCs alignment of vertical alignment LCs cells on SiNx thin film surfaces irradiated with incident IB energy of 1800eV was achieved. Also, a good LC alignment by the IB irradiation on the SiNx thin film surface was observed at an annealing temperature of $180^{\circ}C$. However, the alignment defects of the nematic liquid crystal was observed at an annealing temperature above $230^{\circ}C$. The atomic force microscopy (AFM) images of LCs on SiNx thin film surfaces irradiated with IB energy was used for the surface analysis.