• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.430-430
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• 2007

In general, polyimides (PIs) are used in liquid crystal displays (LCDs) as alignment layer of liquid crystals (LCs). Up to date, the rubbing alignment technique has been widely used to align liquid crystals on the PI surface, which is suitable for mass-production of LCDs because of its simple process and high productivity. However, this method has some disadvantages. Rubbed PI surfaces include the debris left by the cloth and the generation of electrostatic charges during rubbing process. Therefore, rubbing-free techniques for LC alignment are strongly required in LCD technology. In this experiment, PI was uniformly coated on indium-tin-oxide electrode substrates to form LC alignment layers using a spin-coating method and the PI layers were subsequently imidized at 433 K for 1 h. The thickness of the PI layer was set at 50 nm. The LC alignment layer surfaces were exposed to an $Ar^+$ ion-beam under various ion-beam energies. The antiparallel cells and twisted-nematic (TN) cells for the measurement of pretile angle and electro-optical characteristics were fabricated with the cell gap of 60 and $5\;{\mu}m$, respectively. The LC cells were filled with nematic LC (NLC, MJ001929, Merck) and were assembled. The NLC alignment capability on ion-beam-treated PI was observed using photomicroscope and the pretilt angle of the NLC was measured by the crystal-rotation method at room temperature. Voltage-transmittance (V-T) and response time characteristics of the ion-beam irradiated TN cell were measured by a LCD evaluation system.

• 전자공학회논문지 IE
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• v.44 no.2
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• pp.26-31
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• 2007

A surface treatment was performed after the screen printing of a carbon nanotube paste for obtaining the carbon nanotube field emission array(CNT FEA) on the soda-lime glass substrate. In this experiment, Ar ion bombardment was applied as an effective surface treatment method. After making a cathode electrode on the glass substrate, photo sensitive CNT paste was screen-printed, and then back-side was exposure by uv light. Then, the exposed CNT paste was selectively remained by development. After post-baking, the remained CNT paste was bombarded by accelerated Ar ions for removing some binders and exposing only CNTs. As results, the field emission characteristics were strongly depended on the accelerating energy. At 100 eV, the emission was highest and as the acceleration energy increases more then 100 eV, the emission decreased. This was due to the removal of CNT itself as well as binders.

• Polymer(Korea)
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• v.25 no.5
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• pp.642-648
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• 2001

An attempt was made to synthesize an ammonia adsorbent by the photo-induced grafting of styrene (St) onto polypropylene (PP) nonwoven using benzoin ethyl ether (BEE) as a photosensitizer with urea and trimethylol propane triacrylate in methanol medium. As styrene concentration was increased, the graft yield was increased. It was also found that the graft yield increased with reaction time. The polypropylene grafted with styrene (PP-g-St) was sulfonated by chlorosulfonic acid in dichloroethane and complexed with several metal ion, such as $cO^{+2}$, $nI^{+2}$, $cU^{+2}$, $Zn^{+2}$. The amount of ammonia gas adsorbed by these sample was dependent on the degree of sulfonation, adsorption time, and ammonia gas pressure. The adsorption capacity of ammonia gas by the sulfonated PP-g-St(SPP-g-St) nonwoven with 4. 25 mmol $H^+$/g was 6.61 mmol/g. Metal ion complexed SPP-g-St nonwovens had higher adsorption capacity than SPP-g-St nonwoven and the $Co^{+2}$ complexed SPP-g-St showed 9.90 mmol $NH_3$/g, which was much higher than that of active carbon or silica gel.

• Biomolecules & Therapeutics
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• v.21 no.6
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• pp.470-475
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• 2013

Ultraviolet (UV) radiation is a major environmental factor that leads to acute and chronic reactions in the human skin. UV exposure induces wrinkle formation, DNA damage, and generation of reactive oxygen species (ROS). Most mechanistic studies of skin physiology and pharmacology related with UV-irradiated skin have focused on proteins and their related gene expression or single-targeted small molecules. The present study identified and analyzed the alteration of skin metabolites following UVB irradiation and topical retinyl palmitate (RP, 5%) treatment in hairless mice using direct analysis in real time (DART) time-of-flight mass spectrometry (TOF-MS) with multivariate analysis. Under the negative ion mode, the DART ion source successfully ionized various fatty acids including palmitoleic and linolenic acid. From DART-TOF-MS fingerprints measured in positive mode, the prominent dehydrated ion peak (m/z: 369, M+H-$H_2O$) of cholesterol was characterized in all three groups. In positive mode, the discrimination among three groups was much clearer than that in negative mode by using multivariate analysis of orthogonal partial-least squares-discriminant analysis (OPLS-DA). DART-TOF-MS can ionize various small organic molecules in living tissues and is an efficient alternative analytical tool for acquiring full chemical fingerprints from living tissues without requiring sample preparation. DART-MS measurement of skin tissue with multivariate analysis proved to be a powerful method to discriminate between experimental groups and to find biomarkers for various experiment models in skin dermatological research.

• Progress in Medical Physics
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• v.22 no.1
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• pp.3-11
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• 2011

The purpose of this study was to evaluate feasibility of Vertical Multileaf Collimator for determination of irradiation size using Vertical Multileaf Collimator and lead block to determine 4 different irradiation shape in case of Co-60 gamma-ray and 6 MV X-ray. We chose ion chamber, glass dosimeter and EBT chromic film to compare with Vertical Multileaf Collimator results and lead block results. In case of Co-60 gamma-ray and 6 MV X-ray, the central axis point dose normalized at reference field of lead block with ion chamber results for Vertical Multileaf Collimator were estimated higher than lead block about 5.1%, 4.2%. In case of Co-60 gamma-ray, the central axis point dose normalized at reference field of lead block with glass dosimeter results for Vertical Multileaf Collimator were estimated higher than lead block about 2.2%, 7.8%, 7.2%, 4.0% for reference, circle, triangle, cross field, respectively. In case of 6 MV X-ray, the central axis point dose normalized at reference field of lead block with glass dosimeter results for Vertical Multileaf Collimator were estimated higher than lead block about 6.7%, 6.2%, 3.8%, 6.2% for reference, circle, triangle, cross field, respectively. The results of EBT chromic film, Vertical Multileaf Collimator of penumbra size for all irradiation shape was smaller than lead block of those size that 2.0~3.5 mm for Co-60 gamma-ray, 0.5~1.0 mm for 6 MV X-ray. The results from this study, radiation treatment volume that results in shielding block can be minimized. In addition, during radiation treatment for 2, 3-dimensional radiation therapy using a Vertical Multileaf Collimator of this survey can be used to determine variety of irradiation fields.

• Progress in Medical Physics
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• v.12 no.2
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• pp.147-153
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• 2001

We have discussed that the total body irradiation(TBI) dose distribution of 6 and 10 MV photon beams, also differences between calculation dose use of compensator sheet and measurements in humanoid phantom. Total body irradiation and hemi-body irradiation(HBI) can be effectively performed when uniformity of dose distribution is estabilished. The method of TBI and HBI dosimatry requires special considerations related to technique, long distance and very large field, machine parameter, patient positioning. TBI and HBI with megavoltage photon beams requires basic dosimatric data which have to be measured directly or derived from the standard beam data. The semiconductor detector and ion chamber were positioned at a dmax depth, mid depth, and its specific ratio was determined using a scanning data by RFA-7 3-dimensional water phantom and solid phantom. The effective source axis distance 380 cm, the field size from 120 cm to 152 cm, isodose distributions were analyzed as a function of the thickness in phantom. Also, have discussed that the measurement of basic data for clinical photon beams for dosage calculations, data calculation sheet and the use of tissue compensation to improve dose uniformity. We have improved a dose uniformity in the TBI and HBI method.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1947-1949
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• 1999

Carrier lifetime in silicon power devices caused switching delay and excessive power loss at high frequency switching. We studied transient turn-on/turn-off transient characteristics of electron irradiated and proton irradiated silicon pn junction diodes. Both the electron and proton irradiation of power devices have already become a widely used practice to reduce minority carrier lifetime locally[1]. The sample is n+p junction diode, made by ion implantation on a $20\Omega.cm$ p-type wafer. We investigated turn-on/turn-off transient & breakdown voltage characteristics by digital oscilloscope. Our data show that proton irradiated samples show better performance than electron irradiated samples.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.158-158
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• 2003

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.45-48
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• 2003

BiSrCaCuO thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.1
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• pp.35-40
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• 1997

A new method to form the gate oxide and recrystllize the polycrystalline silicon (poly-Si) active layer simultaneously is proposed and fabricated successfully. During te irradiation of excimer laser, the poly-Si film is recrystallized, while the oxygen ion impurities injected into the amorphous silicon(a-Si) film are activated by laser energy and react with silicon atoms to form SiO2. We investigated the characteristics of the sample fabricated by proposed method using AES, TEM, AFM. The electrical performance of oxide was verified by ramp up voltage method. Our experimental results show that a high quality oxide, a pol-Si film with fine grain, and a smooth and clean interface between oxide and poly-Si film have been successfully obtained by the proposed fabrication method. The interface roughness of oxide/poly-Si fabricated by new method is superior to film by conventional fabrication os that the proposed method may improve the performance of poly-Si TFTs.