• Polymer(Korea)
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• 제26권2호
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• pp.153-159
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• 2002

In order to remove $NO_3;^-$ ion from ground-water, fibrous ion -exchangers, APP-g-GMA, were synthesized by GMA grafting onto PP trunk polymer with E-beam accelerator for pre-irradiation. Their degrees of grafting and amination yield increased up to $60^{\circ}C$ and showed maximum values as 133%, 88%, respectively. And their swelling ratio and ion exchange capacity at the maximum values are 86%, 2.5 meq/g, respectively which was higher than commercial ion-exchangers such as IMAC HP555 and Amberlite IRA 400. Optimum adsorption condition of $NO_3;^-$ ion was measured at pH 5~6 and -Cl form of APP-g-GMA containing trimethylammonium group showed the highest adsorption capacity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.398-398
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• 2007

Most recently, the Liquid Crystal (LC) aligning capabilities achieved by ion beam exposure on the diamond-like carbon (DLC) thin film layer have been successfully studied. The DLC thin films have a high mechanical hardness, a high electrical resistance, optical transparency and chemical inertness. Nitrogen doped Diamond Like Carbon (NDLC) thin films exhibit properties similar to those of the DLC films and better thermal stability than the DLC films because C:N bonding in the NDLC film is stronger against thermal stress than C:H bonding in the DLC thin films. Moreover, our research group has already studied ion beam alignment method using the NDLC thin films. The nematic liquid crystal (NLC) alignment effects treated on the SiNx thin film layers using ion beam irradiation for three kinds of N rations was successfully studied for the first time. The SiNx thin film was deposited by plasma-enhanced chemical vapor deposition (PECVD) and used three kinds of N rations. In order to characterize the films, the atomic force microscopy (AFM) image was observed. The good LC aligning capabilities treated on the SiNx thin film with ion beam exposure for all N rations can be achieved. The low pretilt angles for a NLC treated on the SiNx thin film with ion beam irradiation were measure.

• Nuclear Engineering and Technology
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• 제54권7호
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• pp.2408-2417
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• 2022

The nanoindentation behavior of P92 steel with thermomechanical treatment under 3.5 MeV Fe¹³⁺ ion irradiation at room temperature, 400 and 700 ℃ was investigated. Pop-in behavior is observed for all the samples with and without irradiation at room temperature, while the temperature dependence of pop-in behavior is only observed in irradiated samples. The average load and penetration depth at the onset of pop-in increase as the irradiation temperature increases, in line with the results of the maximum shear stress. Irradiation induced hardening is exhibited for all irradiated samples, but there is a significant reduction in the hardness of sample irradiated at 700 ℃ in comparison to the samples irradiated at room temperature and 400 ℃. The ratio of hardness to elastic modulus for all samples decreases with increasing penetration depth except for samples at 700 ℃. With the increasing of irradiation temperature, the ratio of the irreversible work to the total work gradually decreases. In contrast, it increases for samples without irradiation.

• Applied Chemistry for Engineering
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• 제10권1호
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• pp.30-34
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• 1999

Photolysis behavoirs of pesticides(Chlorothalonil and Endosulfan) over UV irradiation UV irradiation with pH 3.0 and irradiation with 3.5% salt were studied. The analyses of pesticides were carried out using gas chromatograph with an electron-capture detector, total organic carbon, and Ion chromatograph, respectively. The reactions were conducted in a alumium annular reactor equipped with a low pressure mercury multilamp ($8W{\times}6$) and initial concentration was 10 ppm. Chlorothalonil was almost photodegraded by UV irradiation, UV irradiation with pH 3.0 and 3.5% salt within 30 min of reaction time. Endosulfan-${\alpha}$,${\beta}$(100%) were photodegraded to 38% of Endosulfan-${\alpha}$ and 25% of Endisulfan-${\beta}$ by UV irradiation. Endosulfan-${\alpha}$(83%) was photodegraded to 66% by UV irradiation, 70% by UV irradiation and pH 3.0 and 75% by UV irradiation and 3.5% salt. Endosulfan-${\beta}$(16%) was photodegraded to 80% by UV irradiation, 98% by UV irradiation and pH 3.0 and 90% by UV irradiation and 3.5% salt.

• Korean Journal of Environmental Agriculture
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• 제19권1호
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• pp.58-61
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• 2000

This study was conducted to determine the effect of low dose ${\gamma}-ray$ on the germination rate and physiology of germinative seeds of welsh onion ( Allicm fistulosum L. cv. Sukchangwoidae ) and spinach ( Spinacia oleracea L. cv. Chungrok ). The germination rate of irradiation group was much higher than that of the control. Especially it was noticeably higher in 1 or 2 Gy irradiation groups in the sowing spinach seeds on paper towel. On the welsh onion, the germination rate of the 1 Gy irradiation group increased by 17% compared to that of the control. Ion leakage from seeds irradiated with low dose of ${\gamma}-ray$ was decreased compared to that from the control especially at the early stage of incubation when examined by means of electric conductance. This tendency was confirmed in seeds of welsh onion and spinach. Starch hydrolysis was stimulated by ${\gamma}-ray$ irradiation in welsh onion. Furthermore ${\gamma}-ray$ irradiation was beneficial to keeping the vitality of seeds as determined through decarboxylation of glutamic acid.

• Journal of Radiation Protection and Research
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• 제38권4호
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• pp.166-171
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• 2013

While high-dose ionizing radiation results in long term cellular cytotoxicity, chronic low-dose (<0.2 Gy) of X- or ${\gamma}$-ray irradiation can be beneficial to living organisms by inducing radiation hormesis, stimulating immune function, and adaptive responses. During chronic low-dose-rate radiation (LDR) exposure, whole body of mice is exposed to radiation, however, it remains unclear if LDR causes changes in gene expression of the whole brain. Therefore, we aim to investigate expressed genes (EGs) and signaling pathways specifically regulated by LDR-irradiation ($^{137}Cs$, a cumulative dose of 1.7 Gy for total 100 days) in the whole brain. Using microarray analysis of whole brain RNA extracts harvested from ICR and AKR/J mice after LDR-irradiation, we discovered that two mice strains displayed distinct gene regulation patterns upon LDR-irradiation. In ICR mice, genes involved in ion transport, transition metal ion transport, and developmental cell growth were turned on while, in AKR/J mice, genes involved in sensory perception, cognition, olfactory transduction, G-protein coupled receptor pathways, inflammatory response, proteolysis, and base excision repair were found to be affected by LDR. We validated LDR-sensitive EGs by qPCR and confirmed specific upregulation of S100a7a, Olfr624, and Gm4868 genes in AKR/J mice whole brain. Therefore, our data provide the first report of genetic changes regulated by LDR in the mouse whole brain, which may affect several aspects of brain function.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제19권1호
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• pp.7-12
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• 2006

Local minority carrier lifetime control by means of particle irradiation is an useful technology for Production of modern silicon Power devices. Crystal damage due to ion irradiation can be easily localized by choosing appropriate irradiation energy and minority tarrier lifetime can be reduced locally only in the damaged layer. In this work, proton irradiation technology was used for improving the switching characteristics of a un diode. The irradiation was carried out with various energy and dose condition. The device was characterized by current-voltage, capacitance-voltage, and reverse recovery time measurements. Forward voltage drop was increased to 1.1 V at forward current of 5 A, which was $120\%$ of its original device. Reverse leakage current was 64 nA at reverse voltage of 100 V, and reverse breakdown voltage was 670 V which was the same voltage as original device without irradiation. The reverse recovery time of device was reduced to about $20\%$ compared to that of original device without irradiation.

• Journal of the Korean Society for Heat Treatment
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• 제25권6호
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• pp.279-282
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• 2012

$SnO_2$ thin films were prepared on the Si substrate by radio frequency (RF) magnetron sputtering and then surface of the films were irradiated with intense Ar ion beam to investigate the effect of Ar ion irradiation on the properties and hydrogen gas sensitivity of the films. From atomic force microscope observation, it is supposed that intense Ar bombardments promote rough surface and increase gas sensitivity of $SnO_2$ films for hydrogen gas. The films that Ar ion beam irradiated at 6 keV show the higher sensitivity than the films were irradiated at 3 keV and 9 keV. These results suggest that the $SnO_2$ thin films irradiated with optimized Ar ion beam are promising for practical high-performance hydrogen gas sensors.

• Korean Journal of Plant Resources
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• 제18권1호
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• pp.169-178
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• 2005

Effects of heavy-ion beam$(^{20}Ne)$ irradiation on growth and DNA alteration of tobacco plants were investigated. Seed germination and plant height were decresed as the ion-beam intensity was increased. However, the bolting and flowering were promoted by the low intensities of 5 Gy to 10 Gy treatment. Out of the 100 primers screened, 59 primers generated 336 DNA fragments by RAPD analysis, and one specific DNA fragment that amplified in control but not in the ion-beam irradiated plants was observed. By AFLP analysis, DNA fragment difference related to the ion-beam treatment was not detected but observed among the plant bodys.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.185-185
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• 2009

The aligned liquid crystals (LCs) display on SiNx thin films using ion-beam (IB) irradiation was studied with controllability ofpretilt angle depending on incident energies of the IB. Plasma-enhanced chemical vapor deposition (PECVD) was used to orient the LCs on SiNx alignment films. The LCs alignment property for the SiNx thin films were observed to verify the practical application potential (figure1). A good LCs alignment of vertical alignment LCs cells on SiNx thin film surfaces irradiated with incident IB energy of 1800eV was achieved. Also, a good LC alignment by the IB irradiation on the SiNx thin film surface was observed at an annealing temperature of $180^{\circ}C$. However, the alignment defects of the nematic liquid crystal was observed at an annealing temperature above $230^{\circ}C$. The atomic force microscopy (AFM) images of LCs on SiNx thin film surfaces irradiated with IB energy was used for the surface analysis.