• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.368-368
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• 2008

Ion implantation has been widely developed during the past decades to become a standard industrial tool. To comply with the growing needs in ion implantation, innovative technology for the control of ion beam parameters is required. Beam current, beam profile, ion fractions are of great interest when uniformity of the implant is an issue. Especially, it is important to measure the spatial distribution of beam power and also the energy distribution of accelerated ions. This energy distribution is influenced by the proportion of mass for ion in the plasma generator(ion source) and by charge exchange and dissociation within the accelerator structure and also by possible collective effects in the neutralizer which may affect the energy and divergence of ions. Hydrogen atom has been the object of a good study to investigate the energy distribution. Hydrogen ion sources typically produce multi-momentum beams consisting of atomic ion ($H^+$) and molecular ion ($H_2^+$ and $H_3^+$). In the beam injector, the molecular ions pass through a charge-exchanges gas cell and break up into atomic with one-half (from $H_2^+$) or one-third (from $H_3^+$) according to their accelerated energy. Burrell et al. have observed the Doppler shifted lines from incident $H^+$, $H_2^+$, and $H_3^+$ using a Doppler shift spectroscopy. Several authors have measured the proportion of mass for hydrogen ion and deuterium using an ion source equipped with a magnetic dipole filter. We developed an ion implanter with 50-KeV and 20-mA ion source and 100-keV accelerator tube, aiming at commercial uses. In order to measure the proportion of mass for ions, we designed a filter system which can be used to measure the ion fraction in any type of ion source. The hydrogen and helium ion species compositions are used a filter system with the two magnets configurations.

• Journal of the Korean Institute of Telematics and Electronics
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• v.11 no.1
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• pp.33-39
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• 1974

A method of dopant implantation by low temperatme diffusion with ion collisions as well as the mechanism of its apparatus is to be introduced. The implantillg function is mainly based on the Principle of radiation enhanced diffusion due to the collisions of low energy Particles and the preheating of the substrate in an environment of rarefied air plasma. The implanted results of various dopants into semicondctors by the Implanter are also presented.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.245-246
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• 2013

한국과학기술연구원에서는 2007년부터 시작된 중대형가속기구축사업을 통하여 3기의 정전형 가속기를 설치하였다. 1996년에 도입된 2.0 MV Pelletron을 비롯하여 신규 도입된 6 MVTandetron과 400 kV implanter 등 모두 3기의 정전형가속기로 30 keV부터 ~60 MeV까지의 단색 이온빔을 인출, 이용할 수 있는 실험설비의 구축이 완성되었다. 정전형가속기의 주요 활용분야는 femto~atto mole정도의 동위원소를 측정하는 가속기질량분석법(AMS)를 비롯하여 RBS/ERD로 대표되는 이온빔분석법(ion beam analysis, IBA) 그리고 고에너지 이온빔을 이용한 물질 개질분야(ion beam material modification, IBMM)로 크게 분류된다. 이 시설은 당 연구원의 연구 수요 뿐 아니라 국내 연구자의 수요를 아우르는 시설로 계획하고 있다. 여타 실험/분석장비와 달리 가속기시설은본체의 완성 후 활용목적에 맞춰 빔라인의 증설이 필요하며 최근 가장활용성이 큰 가속기질량분석(accelerator mass spectrometry, AMS)의 경우는 활용분야별 시료 전처리 시설과 기술의 개발이 요구된다. 따라서 KIST에서는 향후 수년간 활용 분야별 대표적인 주제를 선정하고 필요한 선행연구를 통하여 KIST 이온빔시설에 대한 연구자들의 접근편의성을 제고하고자한다. 본 발표에서는 지난 6년간의 수행된 가속기 시설의 개요와 함께 장차 수행할 선행연구의 방향과 내용을 소개한다(Figure capture). Layout of the newly constructed KIST ion beam facility.

• Korean Journal of Materials Research
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• v.26 no.6
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• pp.347-352
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• 2016

ZnO with wurtzite structure has a wide band gap of 3.37 eV. Because ZnO has a direct band gap and a large exciton binding energy, it has higher optical efficiency and thermal stability than the GaN material of blue light emitting devices. To fabricate ZnO devices with optical and thermal advantages, n-type and p-type doping are needed. Many research groups have devoted themselves to fabricating stable p-type ZnO. In this study, $As^+$ ion was implanted using an ion implanter to fabricate p-type ZnO. After the ion implant, rapid thermal annealing (RTA) was conducted to activate the arsenic dopants. First, the structural and optical properties of the ZnO thin films were investigated for as-grown, as-implanted, and annealed ZnO using FE-SEM, XRD, and PL, respectively. Then, the structural, optical, and electrical properties of the ZnO thin films, depending on the As ion dose variation and the RTA temperatures, were analyzed using the same methods. In our experiment, p-type ZnO thin films with a hole concentration of $1.263{\times}10^{18}cm^{-3}$ were obtained when the dose of $5{\times}10^{14}$ As $ions/cm^2$ was implanted and the RTA was conducted at $850^{\circ}C$ for 1 min.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.398-403
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• 2003

Shallow $p^{＋}$ n junction was formed using a ULE(ultra low energy) implanter. Deactivation phenomena were investigated for the shallow source/drain junction based on measurements of post-annealing time and temperature following the rapid thermal annealing(RTA) treatments. We found that deactivation kinetics has two regimes such that the amount of deactivation increases exponentially with annealing temperature up to $850^{\circ}C$ and that it decreases linearly with the annealing temperature beyond that temperature. We believe that the first regime is kinetically limited while the second one is thermodynamically limited. We also observed "transient enhanced deactivation", an anomalous increase in sheet resistance during the early stage of annealing at temperatures higher than X$/^{\circ}C$. Activation energy for transient enhanced deactivation was measured to be 1.75-1.87 eV range, while that for normal deactivation was found to be between 3.49-3.69 eV.