• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.10
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• pp.124-131
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• 2013

The most important thing in Plasma simulation is the etching process in which etch rate is calculated based on feature profile. Although there are various components to consider in calculating etch rate such as Ion Flux, Neutral, gas, and temperature, Addressing of this paper is limited to Ion Flux. This paper propose a scan method to compute Ion Flux faster for Plasma simulation. Also, this paper experiments and compares generally used Monte Carlo method and the proposed method based on gaussian and cosine distribution. Lastly, this paper proves that the proposed method can calculate accurate Ion Flux more efficiently than Monte Carlo method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.25-26
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• 2009

Pulsed-PECVD를 이용하여 상온에서 실리콘 나이트라이드(SiN) 박막을 증착하였다. 본 연구에서는, 60-100%의 duty ratio 변화에 따른 굴절률을 살펴보고, 굴절률에 대한 이온에너지의 영향을 분석했다. RF 소스파워는 900W로 고정하였고 $SiH_4-N_2$를 이용하였다. 이온에너지에 대한 정보는 non-invasive 이온 분석기를 이용하여 수집하였다. 측정된 이온에너지 변수는 high ion energy, low ion energy, high ion energy flux, low ion energy flux이며, 이를 이용해 또 다른 변수인 ion energy flux ratio를 계산하였다. Duty ratio의 감소에 따라 굴절률은 일반적으로 감소하였다. 또한 duty ratio의 감소에 따라 high ion energy는 증가하였다. 한편, 60-80%에서 굴절률은 이온에너지 flux의 비에 강한 의존성을 보였으며, 60%를 제외한 모든 duty ratio 구간에서 굴절률은 Nl에 강하게 영향을 알고 있는 것으로 유추되었다. 굴절률은 1.508와 1.714 사이에서 변화하였다.

• Journal of Korean Vacuum Science & Technology
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• v.7 no.2
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• pp.45-56
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• 2003

A high flux metal plasma pulse ion source, which can simultaneously perform ion implantation and deposition, was developed and tested to evaluate its performance using the prototype. Flux of ion source was measured to be 5 A and bi-polar pulse power supply with a peak voltage of 250 V, repetition of 20 Hz and width of 100 ${\mu}\textrm{s}$ has an output current of 2 kA and average power of 2 kW. Trigger power supply is a high voltage pulse generator producing a peak voltage of 12 kV, peak current of 50 A and repetition rate of 20 Hz. The acceleration column for providing target energy up to ion implantation is carefully designed and compatible with UHV (ultra high vacuum) application. Prototype systems including various ion sources are fabricated for the performance test in the vacuum and evaluated to be more competitive than the existing equipments through repeated deposition experiments.

• 한국초전도학회:학술대회논문집
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• 2008.08a
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• pp.19-19
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• 2008

• Journal of the Korean institute of surface engineering
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• v.43 no.3
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• pp.159-164
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• 2010

Surface roughness of deposited or etched film strongly depends on ion bombardment. Relationships between ion bombardment variables and surface roughness are too complicated to model analytically. To overcome this, an empirical neural network model was constructed and applied to a deposition process of silicon nitride (SiN) films. The films were deposited by using a pulsed plasma enhanced chemical vapor deposition system in $SiH_4$-$NH_4$ plasma. Radio frequency source power and duty ratio were varied in the range of 200-800 W and 40-100%. A total of 20 experiments were conducted. A non-invasive ion energy analyzer was used to collect ion energy distribution. The diagnostic variables examined include high (or) low ion energy and high (or low) ion energy flux. Mean surface roughness was measured by using atomic force microscopy. A neural network model relating the diagnostic variables to the surface roughness was constructed and its prediction performance was optimized by using a genetic algorithm. The optimized model yielded an improved performance of about 58% over statistical regression model. The model revealed very interesting features useful for optimization of surface roughness. This includes a reduction in surface roughness either by an increase in ion energy flux at lower ion energy or by an increase in higher ion energy at lower ion energy flux.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.117-117
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• 2000

높은 광학적 투과성과 전기전도성을 갖는 ITO film은 solar cell같은 optoelectronic device나 휴대용 소형 TV, flat panel display 등의 투명전극으로 그 응용 분야가 광범위하여 많은 연구가 수행되어져 왔다. 기판으로서 유리를 사용할 때 생기는 활용범위 제한을 극복하고자 최근 유기물 위에 증착이 가능한 저온 증착방법에 대한 연구가 활발히 이루어지고 있다. 그 가운데 이온빔과 같은 energetic한 beam을 이용한 박막의 제조는 기판을 플라즈마 발생지역으로부터 분리시켜 이온빔의 flux 및 에너지, 입사각 등의 자유로운 조절을 통해 상온에서도 우수한 성질의 박막형성 가능성이 제시되어 지고 있다. ITO박막을 형성하는 방법 중 스프레이법이나 CVD법과 같은 화학적 증착방법은 증착시 350-50$0^{\circ}C$의 고온이 필요하고 현재 가장 많이 응용되어 지고 있는 sputter법은 15$0^{\circ}C$정도의 가열이 필요하므로 앞으로 응용가능성이 매우 커서 많은 연구가 진행중인 플라스틱과 아크릴 같은 flexible 한 기판위 증착에 적용이 불가능하다. 본 실험에서는 IBAD(Ion Beam Assisted Deposition)법을 이용하여 저온 ITO film을 유리와 유기막위에 증착하는 연구를 수행하였다. 유기막위에 증착된 ITO는 보다 가볍고 충격에 강하고 유리에 못지 않은 투과성을 가지고 있으나 현재 film의 quality 향상에 대한 요구가 증대되어 지고 있는 실정이다. 따라서, 본 실험에서는 dual oxygen ion gun의 조건변화에 따른 ITO film의 특성변화를 관찰하였다. 고정된 증？율에 한 개 ion gun에 ion flux를 고정시킨 후 또 다른 ion gun에서 발생하는 oxygen radical의 영향을 조사하였으며 oxygen radical의 rf power에 따른 변화는 OES(Optical emission spectroscopy)를 사용하였다. 너무 적은 oxygen ion beam flux나 oxygen radical은 film의 전도도 및 투과도를 저하시켰고 반면 너무 과도한 flux의 증가 시는 전도도는 감소하였고 투과도는 증가하는 경향을 보였다. 기판에 도달하는 oxygen ion flux는 faraday cup을 이용하여 측정하였으며 증착된 ITO film은 XPS, UV-spectrometer, 4-point probe를 이용하여 분석하였다.

• Proceedings of the Korean Society of Applied Pharmacology
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• 1992.05a
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• pp.62-62
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• 1992

1.이온토포레시스에 의한 ISP의 경피촙수증가는 단순투과의 약 13배로서 그 증가정도는 전류세기와 약물농도에 비례하였다. 2. 가해주는 $Na^{＋}$ 농도가 커질수록 ISP의 flux는 감소하였다. 3. ion-pairing agent률 가하면 ISP의 flux는 감소하는데, 그 감소정도는 TU>SAL>BEN 로서 이는 이 물질들이 ISP와 ion-pair를 형성하는 능력순서와 같았다. 4. ISP용액의 pH증가시 ISP의 flux는 대체적으로 증가하며 그 pattern은 피부의 pKa를 3.5로 가정할 때의 피부해리곡선과 유사하였다. ISP가 광범위한 pH에서 완벽하게 해리된다고 가정할 때 pH증가시 flux증가는 피부해리 증가에 따른 permselectivity 증가에 기인한 것으로 생각되었다.

• Korean Journal of Materials Research
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• v.15 no.6
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• pp.361-369
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• 2005

InP(100) crystal surface was irradiated by ion beams with low energy $(180\~225\;eV)$ and high flux $(\~10^{15}/cm^2/s)$, Self-organization process induced by ion beam was investigated by examining nano structures formed during ion beam sputtering. As an ion source, an electrostatic closed electron Hall drift thruster with a broad beam size was used. While the incident angle $(\theta)$, ion flux (J), and ion fluence $(\phi)$ were changed and InP crystal was rotated, cone-like, ripple, and anistropic nanostrucuture formed on the surface were analyzed by an atomic force microscope. The wavelength of the ripple is about 40 nm smaller than ever reported values and depends on the ion flux as $\lambda{\propto}J^{-1/2}$, which is coincident with the B-H model. As the incident angle is varied, the root mean square of the surface roughness slightly increases up to the critical angle but suddenly decreases due to the decrease of sputtering yield. By the rotation of the sample, the formation of nano dots with the size of $95\~260\;nm$ is clearly observed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.148-148
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• 2012

A cutoff probe is the novel diagnostic method to get the absolute plasma density with simple system and less assumption. However, high density of ion flux from plasma on probe tip can make the error of plasma density measurement because the dielectric material of probe tip can be damaged by ion flux. We proposed a shielded cutoff probe using the ceramic tube for protection from ion flux. The ceramic tube on probe tip can intercept the ion flux from plasma. The transmitted spectrum using the shielded cutoff probe is good agreement with E/M wave simulation result (CST Microwave Studio) and previous circuit simulation of cutoff probe [1]. From the analysis of the measured transmitted spectrum base on the circuit modeling, the parallel resonance frequency is same as the unshielded cutoff probe case. The obtained results of electron density is presented and discussed in wide range of experimental conditions, together with comparison result with previous cutoff method.

• Proceedings of the Membrane Society of Korea Conference
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• 2005.11a
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• pp.96-101
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• 2005

A theory for the material transports through ion exchange membrane has been developed on the basis of nonequilibrium thermodynamics by removing the assumption of solvent flow in the previous paper and applied to a detailed study of the ionic transport properties of new charged mosaic membrane(CMM) system. The CMM having two different fixed charges in the polymer membrane indicated unique selective transport behavior then ion-exchange membrane. The separation behavior of ion transport across the CMM with a parallel array of positive and negative functional charges were investigated. It was well-known the analysis of the volume flux and solute flux based on nonequilibrium thermodynamics. Our suggests preferential salt transport across the charged mosaic membranes. Transport properties of heavy metal ions, $Mg^{2+}$, $Mn^{2+}$and sucrose system across the charged mosaic membrane were estimated. As a result, we were known metal salts transport depended largely on the CMM. The reflection coefficient indicated the negative value that suggested preferential material transport and was independent of charged mosaic membrane thickness.