• Title/Summary/Keyword: Ion Beam Analysis

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Structural Analysis and Manufacturing of the Integrated System using Ion Beam (이온 빔 이용 통합시스템의 제작 및 구조해석)

  • Kim, Seong-Keol
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.16 no.3
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    • pp.88-95
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    • 2007
  • Generally, the integrated system using ion beam consists of 4 major parts, which are SEM, FIB, nano stage, and chamber. Among them, the nano stage and the chamber are designed and manufactured. The whole systems are integrated. Also, FE models are built to perform modal analyses of each part and the whole integrated system with a commercial program. Through these analyses, it is found that each part and the integrated system are very safe against vibrations including external excitations from ground and any others, because their natural frequencies are much larger than frequencies of external excitations. Also, isolation of ground induced vibration is considered.

A Failure Analysis of SLS Polysilicon TFT Devices for Enhanced Performances (SLS 다결정 실리콘 TFT 소자의 불량분석에 관한 연구)

  • 오재영;김동환;박정호;박원규
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.11
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    • pp.969-975
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    • 2002
  • Thin film transistors(TFT) were made based on the polycrystalline Si (poly-Si) crystallized by sequential lateral solidification(SLS) method. The electrical characteristics of the devices were analyzed. n-type TFTs did not show a superior characteristics compared to p-type TFTs. We analyzed the causes of the failure by focused ion beam(FIB) analysis and automatic spreading resistance(ASR) measurement, to study the structural integrity and the doping distribution, respectively. FIB showed no structural problems but it revealed a non-intermixed layer in the contact holes between the polysilicon and the aluminum electrode. ASR analyses on poly-Si layer with various doping concentrations and activation temperatures showed that the inadequately doped areas were partially responsible for the inferior behavior of the whole device.

Electrical Characterization of Electronic Materials Using FIB-assisted Nanomanipulators

  • Roh, Jae-Hong;You, Yil-Hwan;Ahn, Jae-Pyeong;Hwang, Jinha
    • Applied Microscopy
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    • v.42 no.4
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    • pp.223-227
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    • 2012
  • Focused Ion Beam (FIB) systems have incorporated versatile nanomanipulators with inherent sophisticated machining capability to characterize the electrical properties of highly miniature components of electronic devices. Carbon fibers were chosen as a model system to test the applicability of nanomanipulators to microscale electronic materials, with special emphasis on the direct current current-voltage characterizations in terms of electrode configuration. The presence of contact resistance affects the electrical characterization. This resistance originates from either i) the so-called "spreading resistance" due to the geometrical constriction near the electrode - material interface or ii) resistive surface layers. An appropriate electrode strategy is proposed herein for the use of FIB-based manipulators.

Development of Carbon Nitride Coating for High Wear Resistant Rolling Element (내마모 전동체 제조를 위한 질화탄소코팅의 개발)

  • Choi, Byung-Young;Umehara, Noritsugu
    • Journal of the Korean Society for Precision Engineering
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    • v.16 no.11
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    • pp.243-247
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    • 1999
  • Carbon nitride coatings on the substrates of 0.55wt% C - 1.68wt% Mn induction-hardened rolling elements were prepared by ion beam assisted deposition. It was found through metallographic observation that the carbon nitride coatings appeared lamellar-type repeated layers parallel to the surface of substrate. Surface roughness of the coated specimens was improved in comparison with that of the substrates. Wear resistance of the coatings was evaluated using Polymet RCF-1 machine with a constant supply of lubricant followed by Weibull statistical analysis and scanning electron microscopy. the results indicated failure due to old-age wear-out of the coatings was mainly caused by numerous micropits formed on the wear track during repeated rolling contact.

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PLASMA SOURCE ION IMPLANTATION OF NITROGEN AND CARBON IONS INTO CO-CEMENTED WC

  • Han, Seung-Hee;Lee, Yeon-Hee;Lee, Jung-Hye;Kim, Hai-Dong;Kim, Gon-Ho;Kim, Yeong-Woo;Cho, Jung-Hee
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.220-220
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    • 1999
  • In plasma source ion implantation, the target is immersed in the plasma and repetitively biased by negative high voltage pulses to implant the extracted ions from plasma into the surface of the target material. In this way, the problems of line-of-sight implantation in ion-beam ion implantation technique can be effectively solved. In addition, the high dose rate and simplicity of the equipment enable the ion implantation a commercially affordable process. In this work, plasma source ion implantation technique was used to improve the wear resistance of Co-cemented WC. which has been extensively used for high speed tools. Nitrogen and carbon ions were implanted using the pulse bias of -602kV, 25 sec and at various implantation conditions. The implanted samples were examined using scanning Auger electron spectroscopy and XPS to investigate the depth distributions of implanted ions and to reveal the chemical state change due to the ion implantation. The implanted ions were found to have penetrated to the depth of 3000$\AA$. The wear resistance of the implanted samples was measured using pin-on-disc wear tester and the wear tracks were examined with alpha-step profilometer.

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Quantitative analysis of hydrogen in thin film by scattering-recoil co-measurement technique (산란-되튐 동시 측정 방법에 의한 박막 중 수소 정량법)

  • Lee, Hwa-Ryun;Eum, Chul Hun;Choi, Han-Woo;Kim, Joonkon
    • Analytical Science and Technology
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    • v.19 no.5
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    • pp.400-406
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    • 2006
  • Hydrogen analysis by elastic recoil detection has been performed utilizing polyimide film as a reference sample of known hydrogen content assuming the soundness of ion beam current integration. However beam current integration at higher incidence angle is not reliable. Scattering yield per unit fluence by current integration which is normalized per unit path length decreases as the sample tilt angle is getting higher. Moreover because beam current integration at high tilt angle is incomplete, hydrogen evaluation is very risky by direct comparison of sequentially collected recoil spectra between reference and target sample. In this study, primary ion beam dose is determined by backscattering spectrum that is collected simultaneously with recoil spectrum instead of ion beam current integration in order to reduce uncertainty arising in the process of current integration and to enhance the reliability of quantitative analysis. Three test samples are selected $-7.6{\mu}m$ polyimide film, hydrogen implanted silicondioxide and Au deposited carbon wafer- and analyzed by two methods and compared.