• 한국진공학회지
• /
• 제8권4B호
• /
• pp.556-564
• /
• 1999

The analysis on heat fluxed on and transmission efficiencies by the collimators of neutral beam injection lines in KSTAR tokamak device has been carried out. And a mathematical model describing non-Gaussian beam distribution profile has been established. A neutral beam injection device is composed of 3 separate ion sources and corresponding beam transport lines, which deal with 7.8 MW of beam power, respectively. The divergence angles of ion beam are $1.2^{\circ}$and $0.5^{\circ}$, in vertical and horizontal directions, respectively. The maximum normal heat load on source exit scraper is 9.1 kW/$\textrm{cm}^2$ and net beam transmission efficiency is ~28%. The effect of misalignment of ion source and scrapers on the scraper heat load and beam transmission also has been analyzed.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.279-282
• /
• 2001

The IBE(ion beam etching)-induced Schottky barrier variation which depends on various etching history related with ion energy, incident angle and etching time has been investigated using voltage-current, capacitance-voltage characteristics of metal-etched silicon contact and morphology of etched surface were studied using AFM(atomic force microscope). For ion beam etched n-type silicons, Schottky barrier is reduced according to ion beam energy. It can be seen that amount of donor-like positive charge created in the damaged layer is proportional to the ion energy. By contrary, for ion beam etched p-type silicons, the Schottky barrier and specific contact resistance are both increased. Not only etching time but also incident angle of ion beam has an effect on barrier height. Taping-mode AFM analysis shows increased roughness RMS(Root-Mean-Square) and depth distribution due to ion bombardment. Annealing in an N$_2$ ambient for 30 min was found to be effective in improving the diode characteristics of the etched samples and minimum annealing temperatures to recover IBE-induced barrier variation were related to ion beam energy.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
• /
• pp.170-170
• /
• 2000

Synthetic polymers such as polyimide, polycarbonate, and poly(methyl methacrylate) are long chain molecules which consist of carbon, hydrogen, and heteroatom linked together chemically. Recently, polymer surface can be modified by using a high energy ion beam process. High energy ions are introduced into polymer structure with high velocity and provide a high degree of chemical bonding between molecular chains. In high energy beam process the modified polymers have the highly crosslinked three-dimensionally connected rigid network structure and they showed significant improvements in electrical conductivity, in hardness and in resistance to wear and chemicals. Polyimide films (Kapton, types HN) with thickness of 50~100${\mu}{\textrm}{m}$ were used for investigations. They were treated with two different surface modification techniques: Plasma Source Ion Implantation (PSII) and conventional Ion Implantation. Polyimide films were implanted with different ion species such as Ar+, N+, C+, He+, and O+ with dose from 1 x 1015 to 1 x 1017 ions/cm2. Ion energy was varied from 10keV to 60keV for PSII experiment. Polyimide samples were also implanted with 1 MeV hydrogen, oxygen, nitrogen ions with a dose of 1x1015ions/cm2. This work provides the possibility for inducing conductivity in polyimide films by ion beam bombardment in the keloelectronvolt to megaelectronvolt energy range. The electrical properties of implanted polyimide were determined by four-point probe measurement. Depending on ion energy, doses, and ion type, the surface resistivity of the film is reduced by several orders of magnitude. Ion bombarded layers were characterized by Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS), XPS, and SEM.

• 한국정밀공학회지
• /
• 제27권8호
• /
• pp.84-90
• /
• 2010

In focused ion beam (FIB) fabrication processes the ion beam intensity with Gaussian profile has a drawback for high resolution machining. In this paper, the fabrication method to modify the beam profile at substrate using silt mask is proposed to increase the machining resolution at high current. Slit mask is utilized to block the part of beam and transmit only high intensity portion. A nano manipulator is utilized to handle the silt mask. Geometrical analysis on fabricated profile through silt mask was conducted. By utilizing proposed method, improvement of machining resolution was achieved.

• Applied Microscopy
• /
• 제48권4호
• /
• pp.122-125
• /
• 2018

The focused ion beam (FIB) method is widely used to prepare specimens for observation by transmission electron microscopy (TEM), which offers a wide variety of imaging and analytical techniques. TEM has played a significant role in material investigation. However, the FIB method induces amorphization due to bombardment with the high-energy gallium ($Ga^+$) ion beam. To solve this problem, electron beam induced deposition (EBID) is used to form a protective layer to prevent damage to the specimen surface. In this study, we introduce an optimized TEM specimen preparation procedure by comparing the EBID of carbon and tungsten as protective layers in FIB. The selection of appropriate EBID conditions for preparing specimens for TEM analysis is described in detail.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제6권2호
• /
• pp.95-100
• /
• 2006

The GaAs-on-insulator (GOI) wafer fabrication technique has been developed by using ion-cut process, based on hydrogen ion implantation and wafer direct bonding techniques. The hydrogen ion implantation condition for the ion-cut process in GaAs and the associated implantation mechanism have been investigated in this paper. Depth distribution of hydrogen atoms and the corresponding lattice disorder in (100) GaAs wafers produced by 40 keV hydrogen ion implantation were studied by SIMS and RBS/channeling analysis, respectively. In addition, the formation of platelets in the as-implanted GaAs and their microscopic evolution with annealing in the damaged layer was also studied by cross-sectional TEM analysis. The influence of the ion fluence, the implantation temperature and subsequent annealing on blistering and/or flaking was studied, and the optimum conditions for achieving blistering/splitting only after post-implantation annealing were determined. It was found that the new optimum implant temperature window for the GaAs ion-cut lie in $120{\sim}160^{\circ}C$, which is markedly lower than the previously reported window probably due to the inaccuracy in temperature measurement in most of the other implanters.

• 대한치과보철학회지
• /
• 제29권2호
• /
• pp.245-265
• /
• 1991

The purpose of this study was to observe the changes of the elemental transmission and bond strength between the metal and porcelain according to various kinds of ion beam mixing method. ion beam mixing of $meta1/SiO_2$ (silica), $meta1/Al_2O_3$(alumina) interfaces causes reactions when the $Ar^+$ was implanted into bilayer thin films using a 100KeV accelerator which was designed and constructed for this study. A vacuum evaporator used in the $10^{-5}-10^{-6}$ Torr vacuum states for the evaporation. For this study, three kinds of porcelain metal selected, -precious, semiprecious, and non-precious. Silica and alumina were deposited to the metal by the vacuum evaporator, separately. One group was treated by two kinds of dose of the ion beam mixing $(1\times10^{16}ions/cm^2,\;5\times10^{15}ions/cm^2)$, and the other group was not mixed, and analyzed the effects of ion beam mixing. The analyses of bond strength, elemental transmissions were performed by the electron spectroscopy of chemical analysis (ESCA), light and scanning electron microscope, scratch test, and micro Vickers hardness tests. The finding led to the following conclusions. 1. In the scanning electron and light microscopic views, ion beam mixed specimens showed the ion beam mixed indentation. 2. In the micro Vickers hardness and scratch tests, ion beam mixed specimens showed higher strength than that of non mixed specimens, however, nonprecious metal showed a little change in the bond strength between mixed and non mixed specimens. 3. In the scratch test, ion beam mixed specimens showed higher shear strength than that of non treated specimens at the precious and semiprecious groups. 4. In the ESCA analysis, Au-O and Au-Si compounds were formed and transmission of the Au peak was found ion beam mixed $SiO_2/Au$ specimen, simultaneously, in the higher and lower bonded areas, and ion beam mixed $SiO_2/Ni-Cr$ specimen, oxygen, that was transmitted from $SiO_2\;to\;SiO_2/Ni-Cr$ interface combined with 12% of Ni at the interface.

• Tribology and Lubricants
• /
• 제26권2호
• /
• pp.122-128
• /
• 2010

Focused Ion Beam (FIB) has been used for site-specific TEM sample preparation and small scale fabrication. Moreover, analysis on the surface microstructure and phase distribution is possible by ion channeling contrast of FIB with high resolution. This paper describes FIB applications and deformed surface structure induced by sliding. The effect of FIB process on the surface damage was explored as well. The sliding experiments were conducted using high purity aluminum and OFHC(Oxygen-Free High Conductivity) copper. The counterpart material was steel. Pin-on-disk, Rotational Barrel Gas Gun and Explosively Driven Friction Tester were used for the sliding experiments in order to investigate the velocity effect on the microstructural change. From the FIB analysis, it is revealed that ion channeling contrast of FIB has better resolution than SEM and the tribolayer is composed of nanocrystalline structures. And the thickness of tribolayer was constant regardless of sliding velocities.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
• /
• pp.43-43
• /
• 2008

Recently, it is widely studied to liquid crystal (LC) alignment using ion-beam exposure. Because conventional rubbing method has some problems such as defects from dust and electrostatic charges and rubbing scratch during rubbing process. Moreover rubbing method needs cleaning process to remove these defects. Therefore rubbing-free techniques like ion-beam method are strongly required. We studied LC alignment by controlling ion-beam irradiation angles and electro-optical (EO) characteristics of twisted nematic LC on the polyimide surface. In this experiment, a good uniform alignment of the nematic liquid crystal (NLC) with the ion-beam exposure on the polyimide (PI) surface was observed. We also achieved low pretilt angle as function of ion-beam irradiation angles. X-ray photoelectron spectroscopic (XPS) analysis provided chemical evidence for LC alignment by controlling ion-beam irradiation angles. In addition, it can be achieved the good EO properties of the ion-beam-aligned twisted nematic liquid crystal display (TN-LCD) on PI surface. Some other experiments results and discussion will be included in the presentation.

• 한국전기전자재료학회논문지
• /
• 제15권6호
• /
• pp.518-523
• /
• 2002

The influences of ion beam energy and reactive oxygen partial pressure on the physical and crystallographic characteristics of transition metal oxide compound(CrOx) film were studied in this paper. Chromium oxide films were deposited onto a cover-glass using ion Beam Sputter Deposition(IBSD) technique according to the various processing parameters. Crystallinity and grain size of as-deposited films were analyzed using XRD analysis. Thickness and Resistivity of the films were measured by $\alpha$-step and 4-point probe measurement. According to the XRD, XPS and resistivity results, the deposited films were the cermet type films which had crystal structure including amorphous oxide(a-oxide) phase and metal Cr phase simultaneously. The increment of the ion beam energy during the deposition process led to decreasing of metal Cr grain size and the rapid change of resistivity above the critical $O_2$ partial pressure.