• Journal of Electrical Engineering and Technology
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• 제9권2호
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• pp.649-654
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• 2014

In this paper, an analytical model for Surrounding Gate (SG) metal-oxide- semiconductor field effect transistors (MOSFETs) considering quantum effects is presented. To achieve this goal, we have used variational approach for solving the Poission and Schrodinger equations. This model is developed to provide an analytical expression for inversion charge distribution function for all regions of device operation. This expression is used to calculate the other important parameters like inversion charge density, threshold voltage, drain current and gate capacitance. The calculated expressions for the above parameters are simple and accurate. This paper also focuses on the gate tunneling issue associated with high dielectric constant. The validity of this model was checked for the devices with different dimensions and bias voltages. The calculated results are compared with the simulation results and they show good agreement.

• Steel and Composite Structures
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• 제45권6호
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• pp.851-863
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• 2022

This research deals with the study of the Thomson heating effect in magneto-thermoelastic homogeneous isotropic rotating medium, influenced by linearly distributed load and as a result of modified couple stress theory. The charge density is taken as a function of the time of the induced electric current. The heat conduction equation with energy dissipation and with hyperbolic two-temperature (H2T) is used to formulate the model of the problem. Laplace and Fourier transforms are used to solve this mathematical model. Various components of displacement, temperature change, and axial stress as well as couple stress are obtained from the transformed domain. To get the solution in physical domain, numerical inversion techniques have been employed. The Thomson effect with GN (Green-Nagdhi) -III theory and Modified Couple Stress Theory (MCST) is shown graphically on the physical quantities.