• Journal of the Korean Ceramic Society
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• v.38 no.10
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• pp.881-885
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• 2001

Kinetics and mechanisms of intermediate phases formation in $Ba(Mg_{1/3}Ta_{2/3})O_3$, obtained by a solid state reaction were studied. $Ba{Ta_2}{O_6}$ and ${Ba_4}{Ta_2}{O_9}$ as intermediate products were first formed at $700^{\circ}C$. $Ba(Mg_{1/3}Ta_{2/3})O_3$ was appeared at $800^{\circ}C$. Several reactions take place on heating process. $Ba{Ta_2}{O_6}$ is found at the first stage of the reaction, and then $Ba{Ta_2}{O_6}$ or ${Ba_4}{Ta_2}{O_9}$ react with MgO to form $Ba(Mg_{1/3}Ta_{2/3})O_3$. The reaction of $Ba(Mg_{1/3}Ta_{2/3})O_3$ formation does not complete until fired at $1350^{\circ}C$ for 60 min. The kinetics of solid-state reaction between powdered reactants was controlled by diffusion mechanism, and can be explained by the Jander's model for three-dimensional diffusion.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.3
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• pp.291-298
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• 1995

Abstract The growth and dissolution behaviour of reaction phase was studied during dissolution reaction between sintered alumina and $CaMgSiO_4$ at $1600^{\circ}C$ for various times. The formation of $CaO{\cdot}6Al_2O_3$ an intermediate reaction phase, and $CaMgSiO_4$ spinel, the final reaction product were observed during dissolution reaction of alumina into $CaMgSiO_4$ liquid phase. The growth and dissolution shape of $CaO{\cdot}6Al_2O_3$, an intermediate phase, was quite different.

• Journal of Powder Materials
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• v.8 no.2
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• pp.98-103
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• 2001

Metallic tin powder with diameter less than 50 nm was synthesized by inert gas condensation method and subsequently oxidized to tin oxide ($SnO_2$) along the two heat-treatment routes. The $SnO_2$ powder of single phase with a tetragonal structure was obtained by the heat-treatment route with intermediate annealing step-wise oxidation, whereas the $SnO_2$ powder with mixture of orthorhombic and tetragonal phases was obtained by the heat-treatment route without intermediate annealing (direct oxidation). $SnO_2$ gas sensors fabricated from the nano-phase $SnO_2$ powders were investigated by structural observations as well as measurement of electrical resistance. The $SnO_2$ gas sensors fabricated from the mixed-phase powder exhibited much lower sensitivity against $H_2$ gas than those fabricated from the powder of tetragonal phase. Reduced sensitivity of gas sensors with the new orthorhombic phase was attributed to detrimental effects of phase boundaries between orthorhombic and tetragonal phases and many twin boundaries on the charge mobility.

• ETRI Journal
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• v.11 no.4
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• pp.75-83
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• 1989

The diffusion mechanism of Si in GaAs was investigated using different diffusion sources based on the Si-Ga-As ternary phase equilibria. The Si profiles are measured with secondary ion mass spectrometry and differ significantly for sources taken from the different phase fields in the ternary phase diagram. Neutral As vacancy diffusion is proposed for acceptor Si diffusion anneals using a Ga - Si - GaAs source. Donor Si diffusion using As - rich sources and a Si -GaAs tie line source shows concentration dependent diffusion behavior. Concentration dependent diffusion coefficients of donor Si for As - rich source diffusion were found to be related to net ionized donor concentration and showed three regimes of different behavior: saturation regime, intermediate regime,and intrinsic regime. Ga vacancies are proposed to be responsible for donor Si diffusionin GaAs: $Si_Ga^+V_Ga^-$ (donor Si -acceptor Gavacancy) complex for the extrinsic regime and neutral $V_G$a, for the intrinsic regime.The Si - GaAs tie line source resulted in two branch profiles, intermediate between the As - rich and the Ga - rich source diffusion cases.

• Bulletin of the Korean Chemical Society
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• v.12 no.6
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• pp.678-681
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• 1991

The Wittig-oxy-Cope rearrangements of deprotonated diallyl ether, I, $CH_2={\bar{C}}H-CH-O-CH_2-CH=CH_2$, have been investigated theoretically by the AM1 method. A two step mechanism forming a Wittig product ion, II, $(CH_2=CH)$ $(CH_2=CH-CH_2)$ $CHO^-$, through a radical-pair intermediate was found to provide the most favored reaction pathway in the Wittig rearrangement. The subsequent oxy-Cope rearrangement from species II also involves a two step mechanism through a biradicaloid intermediate. The intramolecular proton transfer in I (to form $CH_2=CH-CH_2-O-{\bar{C}}H-CH=CH_2$) is a higher activation energy barrier process compared to the Wittig and oxy-Cope rearrangements and is considered to be insignificant. These results are in good agreement with the condensed-phase as well as gas-phase experimental results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.9
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• pp.912-918
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• 2014

In this paper, a VHF band multi channel phase discriminator for direction finding equipment using tripple baseline interferometer technique is proposed. In order to measure simultaneously phase difference between IF(Intermediate Frequency) signals of the direction finding equipment, phase discriminator was designed to have parallel structure with multi channel, the phase correlator of phase discriminator was designed with I, Q mixer for reducing number of components. And digital LUT(Look Up Table) was applied for compensating error of phase discriminator due to phase unbalance of RF components. The measured phase accuracy of fabricated phase discriminator was 2 degree RMS(Root Mean Square) at 30 dB SNR condition, which is superior to the phase accuracy of conventional product.

• Journal of Astronomy and Space Sciences
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• v.22 no.3
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• pp.197-210
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• 2005

Results of 7 nights of CCD VR photometry of the intermediate polar 1RXS J062518.2+733433 obtained at the Korean 1.8m telescope are reported. The corrected ephemeris for the orbital minimum is BJD (Orb.min) = 2453023.6159(42)+0.1966431(33) (E-1735). The corrected ephemeris for the spin maximum is BJD (spin max) = 2452893 78477 (10)+0.01374116815 (17) (E-15382) (cycle numbering corresponds to that of Staude et al.2003). The variations of the shape of the individual spin variations are highly correlated in V and R. The phase of the spin maximum is found to be dependent on the orbital phase. The corresponding semi-amplitude of sinusoidal variations of phase is $0.11{\pm}0.03.$ This new phenomenon is explained by the changing viewing conditions of the accreting magnetic white dwarf, and should be checked in further observations this star and for other intermediate polars. To avoid influence of this effect on the analysis of the long-term spin period variations, the runs of at least one orbital period are recommended. Results of time series analysis are presented in tables.

• 한국전기화학회:학술대회논문집
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• 1999.10a
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• pp.19-19
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• 1999

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.6
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• pp.448-453
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• 2019

This work reports the electrical characteristics of and temperature distribution in chalcogenide phase change memory (PCM) devices that have a self-aligned structure. GST (Ge-Sb-Te) chalcogenide alloy films were formed in a self-aligned manner by interdiffusion between sputter-deposited Ge and $Sb_2Te_3$ films during thermal annealing. A transmission electron microscopy-energy dispersive X-ray spectroscopy (TEM-EDS) analysis demonstrated that the local composition of the GST alloy differed significantly and that a $Ge_2Sb_2Te_5$ intermediate layer was formed near the $Ge/Sb_2Te_3$ interface. The programming current and threshold switching voltage of the PCM device were much smaller than those of a control device; this implies that a phase transition occurred only in the $Ge_2Sb_2Te_5$ intermediate layer and not in the entire thickness of the GST alloy. It was confirmed by computer simulation, that the localized phase transition and heat loss suppression of the GST alloy promoted a temperature rise in the PCM device.

• Progress in Superconductivity
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• v.4 no.1
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• pp.94-98
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• 2002

Two kinds of multifilament Bi-2223／Ag tapes, which are different in the precursor calcination temperatures, were heat treated for different time (12, 20, 30, 50, 70, or 100 h) firstly to obtain varied B2223 contents, and then followed by the same pressing and sintering cycles. The relation of the 2223 phase contents after the first sintering and the transport property of the fully processed tapes was studied. The results show that 75-80% 2223 phase formed in tapes before the first cold pressing is beneficial to get a high $I_{c}$ in the final tapes. Compensating the total heat treatment time of the tapes first sintered for 20 h to the same length as that first sintered for 50 h in the subsequent sintering stages, different $I_{c}$ enhancements were observed in these two tapes. No improvement on $I_{c}$ was found in the tape made from the powder calcined at higher temperature, whereas for the tape prepared with the lower temperature calcined powder, the $I_{c}$ was increased to the same level as that first sintered for 50 h. The 2223 contents before the intermediate mechanical work is related to the residual reactants, especially to the liquid phase, which is of vital importance to the phase conversion and healing microcracks, meanwhile, to the size and distribution of the non-superconducting secondary phases. The lower temperature calcined powder resulted in slow formation of 2223 phase, but also provided more reactants and liquid phase for the further phase conversion, as a consequence, for the Improvement of $I_{c}$. c/.