• 제목/요약/키워드: Interfacial layer

검색결과 678건 처리시간 0.03초

Electrical Properties of Tungsten Oxide Interfacial Layer for Silicon Solar Cells

  • Oh, Gyujin;Kim, Eun Kyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.196.2-196.2
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    • 2015
  • There are various issues fabricating the successful and efficient solar cell structures. One of the most important issues is band alignment technique. The solar cells make the carrier in their active region over the p-n junction. Then, electrons and holes diffuse by minority carrier diffusion length. After they reach the edge of solar cells, there exist large energy barrier unless the good electrode are chosen. Many various conductor with different work functions can be selected to solve this energy barrier problem to efficiently extract carriers. Tungsten oxide has large band gap known as approximately 3.4 eV, and usually this material shows n-type property with reported work function of 6.65 eV. They are extremely high work function and trap level by oxygen vacancy cause them to become the hole extraction layer for optical devices like solar cells. In this study, we deposited tungsten oxide thin films by sputtering technique with various sputtering conditions. Their electrical contact properties were characterized with transmission line model pattern. The structure of tungsten oxide thin films were measured by x-ray diffraction. With x-ray photoelectron spectroscopy, the content of oxygen was investigated, and their defect states were examined by spectroscopic ellipsometry, UV-Vis spectrophotometer, and photoluminescence measurements.

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직류전원부하에 의한 지르코니아와 금속의 접합 (A Study on the Metal to Zirconia Joining by Applying Direct Current)

  • 김성진;김문협;박성범;권원일
    • 한국전기화학회:학술대회논문집
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    • 한국전기화학회 2005년도 수소연료전지공동심포지움 2005논문집
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    • pp.383-390
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    • 2005
  • Effect of applying a DC voltage on the interfacial reaction at the metal to zirconia interface was investigated utilizing an oxygen ionic conductivity of partially stabilized zirconia. The joining of copper rod and zirconia tube was carried out in Ar gas atmosphere at $1000^{\circ}C$. There are two type of the joining. The one is the reaction bond consisting of copper and zirconia was dominated by surface reaction with a undetectable very thin layer. It was found that copper elements were diffused to zirconia side, but that Zr ions were not diffused to copper side. These results mean application of a DC voltage to migrate oxygen to the copper-zirconia interface can oxidize metal at the copper-zirconia interface and the bonding reaction between zirconia and copper oxide may occur. The other is the reaction bonding was dominated by interdiffusion with a very thick interface layer. This result mean application of a DC voltage can reduce zirconia at the interface. The bonding reaction is to be an alloying between Zr and Cu.

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HgTe/Cdte superlattices grown on CdZnTe(211)B by MBE

  • Kang, T.W.;Jeong, C.S.;Leem, J.H.;Ryu, Y.S.;Hyun, J.K.;Jeon, H.C.;Lee, H.Y.;Han, M.S.
    • 한국진공학회지
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    • 제6권S1호
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    • pp.34-42
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    • 1997
  • Hg-Te-CdTe superlattices have received much interests over the last several years as a potential material for its applications for detecting devices and optoelectronics. We have grown the HgTe-CdTe superlattice using MBE. in our lab. We have carried out DCRC spectroscopy after growth of HgTe-CdTe superlattice with varying the superlattice periods and controlling the barrier thickness and we have that the presence of the main peak and the satellite peaks. We obtained 20 arcsec of FWHM over 100 periods of superlattice. We also note that high peak intensity shows the high quality of the sample and each layer of superlattice has abrupt interfaces. The angular separation between the main peak(m=0) and the first satellite peak(m=$\pm$1) is increased when the barrier layer thickness in superlatice layers are decreased. The separation between the first setellite peak(m=$\pm$1) and the second satellite peak(m$\pm$2) is increased similarly. The number of the satellite peak is a qualitative measure of the interfacial abruptness of the superlattice.

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Non-uniform virtual material modeling on contact interface of assembly structure with bolted joints

  • Cao, Jianbin;Zhang, Zhousuo;Yang, Wenzhan;Guo, Yanfei
    • Structural Engineering and Mechanics
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    • 제72권5호
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    • pp.557-568
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    • 2019
  • Accurate modeling of contact interface in bolted joints is crucial in predicting the dynamic behavior for bolted assemblies under external load. This paper presents a contact pressure distribution based non-uniform virtual material method to describe the joint interface of assembly structure, which is connected by sparsely distributed multi-bolts. Firstly, the contact pressure distribution of bolted joints is obtained by the nonlinear static analysis in the finite element software ANSYS. The contact surface around bolt hole is divided into several sub-layers, and contact pressure in each sub-layer is thought to be evenly. Then, considering multi-asperity contact at the micro perspective, the relationship between contact pressure and interfacial virtual material parameters for each sub-layer is established by using the fractal contact theory. Finally, an experimental platform for the dynamic characteristics testing of a beam lap structure with double-bolted joint is constructed to validate the efficiency of proposed method. It is found that the theoretical results are in good agreement with experimental results by impact response in both time- and frequency-domain, and the relative errors of the first four natural frequencies are less than 1%. Furthermore, the presented model is used to examine the effect of rough contact surface on dynamic characteristics of bolted joint.

INTERFACIAL REACTIONS BETWEEN SN-58MASS%BI EUTECTIC SOLDER AND (CU, ELECTROLESS NI-P/CU)SUBSTRATE

  • Yoon, Jeong-Won;Lee, hang-Bae;Park, Guang-Jin;Shin, Young-Eui;Jung, Seung-Boo
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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    • pp.487-492
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    • 2002
  • The growth kinetics of intermetallic compound layers formed between eutectic Sn-58Bi solder and (Cu, electroless Ni-P/Cu) substrate were investigated at temperature between 70 and 120 C for 1 to 60 days. The layer growth of intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P system satisfied the parabolic law at given temperature range. As a whole, because the values of time exponent (n) have approximately 0.5, the layer growth of the intermetallic compound was mainly controlled by volume diffusion over the temperature range studied. The apparent activation energies of Cu$_{6}$Sn$_{5}$ and Ni$_3$Sn$_4$ intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P were 127.9 and 81.6 kJ/mol, respectively.ely.

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Ferromagnetic Resonance and X-Ray Reflectivity Studies of Pulsed DC Magnetron Sputtered NiFe/IrMn/CoFe Exchange Bias

  • Oksuzoglu, Ramis Mustafa;Akman, Ozlem;Yildirim, Mustafa;Aktas, Bekir
    • Journal of Magnetics
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    • 제17권4호
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    • pp.245-250
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    • 2012
  • Ferromagnetic resonance and X-ray specular reflectivity measurements were performed on $Ni_{81}Fe_{19}/Ir_{20}Mn_{80}/Co_{90}Fe_{10}$ exchange bias trilayers, which were grown using the pulsed-DC magnetron sputtering technique on Si(100)/$SiO_2$(1000 nm) substrates, to investigate the evolution of the interface roughness and exchange bias and their dependence on the NiFe layer thickness. The interface roughness values of the samples decrease with increasing NiFe thickness. The in-plane ferromagnetic resonance measurements indicate that the exchange bias field and the peak-to-peak line widths of the resonance curves are inversely proportional to the NiFe thickness. Furthermore, both the exchange bias field and the interface roughness show almost the same dependence on the NiFe layer thickness. The out-of plane angular dependent measurements indicate that the exchange bias arises predominantly from a variation of exchange anisotropy due to changes in interfacial structure. The correlation between the exchange bias and the interface roughness is discussed.

변온유입 성층축열조의 충전과정에 대한 해석적 접근 (Analytical approaches to the charging process of stratified thermal storage tanks with variable inlet temperature)

  • 유호선
    • 설비공학논문집
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    • 제9권1호
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    • pp.43-54
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    • 1997
  • This paper presents an approximate analytical solution to a two-region one-dimensional model for the charging process of stratified thermal storage tanks with variable inlet temperature in the presence of momentum-induced mixing. Based on the superposition principle, an arbitrary-varying inlet temperature is decomposed into inherent discontinuous steps and continuous intervals approximated as a finite number of piecewise linear functions. This approximation allows the temperature of the upper perfectly-mixed layer to be expressed in terms of constant, linear and exponential functions with respect to time. Applying the Laplace transform technique to the model equation for the lower thermocline layer subject to each of three representative interfacial conditions yields compact-form solutions, a linear combination of which constitutes the final temperature profile. A systematic method for deriving solutions to the plug-flow problem having polynomial-type boundary conditions is also established. The effect of adiabatic exit boundary on solution behaviors proves to be negligible under the actual working conditions, which justifies the assumption of semi-infinite domain introduced in the solution procedure. Finally, the approximate solution is validated by comparing it with an exact solution obtained for a specific variation of inlet temperature. Excellent agreements between them suffice to show the necessity and utility of this work.

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Electric Field-Induced Modification of Magnetocrystalline Anisotropy in Transition-metal Films and at Metal-Insulator Interfaces

  • Nakamura, K.;Akiyama, T.;Ito, T.;Weinert, M.;Freeman, A.J.
    • Journal of Magnetics
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    • 제16권2호
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    • pp.161-163
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    • 2011
  • We report results of first principles calculations for effects of an external electric field (E-field) on the magnetocrystalline anisotropy (MCA) in transition-metal (Fe, Co, and Ni) monolayers and at metal-insulator (Fe/MgO) interfaces by means of full-potential linearized augmented plane wave method. For the monolayers, the MCA in the Fe monolayer (but not in the Co and Ni) is modified by the E-field, and a giant modification is achieved in the $Fe_{0.75}Co_{0.25}$. For the Fe/MgO interfaces, the ideal Fe/MgO interface gives rise to a large out-of plane MCA, and a MCA modification is induced when an E-field is introduced. However, the existence of an interfacial FeO layer between the Fe layer and the MgO substrate may play a key role in demonstrating an Efield-driven MCA switching, i.e., from out-of-plane MCA to in-plane MCA.

Surface Potential Change Depending on Molecular Orientation of Hexadecanethiol Self-Assembled Monolayers on Au(111)

  • Ito, Eisuke;Arai, Takayuki;Hara, Masahiko;Noh, Jaegeun
    • Bulletin of the Korean Chemical Society
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    • 제30권6호
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    • pp.1309-1312
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    • 2009
  • Surface potential and growth processes of hexadecanethiol (HDT) self-assembled monolayers (SAMs) on Au(111) surfaces were examined by Kelvin probe method and scanning tunneling microscopy. It was found that surface potential strongly depends on surface structure of HDT SAMs. The surface potential shift for the striped phase of HDT SAMs chemisorbed on Au(111) surface was +0.45 eV, which was nearly the same as that of the flat-lying hexadecane layer physisorbed on Au(111) surface. This result indicates that the interfacial dipole layer induced by adsorption of alkyl chains is a main contributor to the surface potential change. In the densely-packed HDT monolayer, further change of the surface potential was observed, suggesting that the dipole moment of the alkanethiol molecules is an origin of the surface potential change. These results indicate that the work function of a metal electrode can be modified by controlling the molecular orientation of an adsorbed molecule.

In 도핑된 ZnO 박막의 투명 전극과 유기 발광 다이오드 특성 (Transparent Anodic Properties of In-doped ZnO thin Films for Organic Light Emitting Devices)

  • 박영란;김용성
    • 한국세라믹학회지
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    • 제44권6호
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    • pp.303-307
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    • 2007
  • Transparent In-doped zinc oxide (IZO) thin films are deposited with variation of pulsed DC power at Ar atmosphere on coming 7059 glass substrate by pulsed DC magnetron sputtering. A c-axis oriented IZO thin films were grown in perpendicular to the substrate. The optical transmittance spectra showed high transmittance of over 80% in the UV-visible region and exhibited the absorption edge of about 350 nm. Also, the IZO films exhibited the resistivity of ${\sim}10^{-3}{\Omega}\;cm$ and the mobility of ${\sim}6cm/V\;s$. Organic Light-emitting diodes (OLEDs) with IZO/N,N'-diphenyl-N, N'-bis(3-methylphenl)-1, 1'-biphenyl-4,4'-diamine (TPD)/tris (8-hydroxyquinoline) aluminum ($Alq_3$)/LiF/Al configuration were fabricated. LiF layer inserted is used as an interfacial layer to increase the electron injection. Under a current density of $100\;mA/cm^2$, the OLEDs show an excellent efficiency (9.4 V turn-on voltage) and a good brightness ($12000\;cd/m^2$) of the emission light from the devices. These results indicate that IZO films hold promise for anode electrodes in the OLEDs application.