• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.283-283
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• 2011

The n-doping effect by doping metal carbonate into an electron-injecting organic layer can improve the device performance by the balanced carrier injection because an electron ohmic contact between cathode and an electron-transporting layer, for example, a high current density, a high efficiency, a high luminance, and a low power consumption. In the study, first, we investigated an electron-ohmic property of electron-only device, which has a ITO/$Rb_2CO_3$-doped $C_{60}$/Al structure. Second, we examined the I-V-L characteristics of all-ohmic OLEDs, which are glass/ITO/$MoO_x$-doped NPB (25%, 5 nm)/NPB (63 nm)/$Alq_3$ (32 nm)/$Rb_2CO_3$-doped $C_{60}$(y%, 10 nm)/Al. The $MoO_x$doped NPB and $Rb_2CO_3$-doped fullerene layer were used as the hole-ohmic contact and electron-ohmic contact layer in all-ohmic OLEDs, respectively, Third, the electronic structure of the $Rb_2CO_3$-doped $C_{60}$-doped interfaces were investigated by analyzing photoemission properties, such as x-ray photoemission spectroscopy (XPS), Ultraviolet Photoemission spectroscopy (UPS), and Near-edge x-ray absorption fine structure (NEXAFS) spectroscopy, as a doping concentration at the interfaces of $Rb_2CO_3$-doped fullerene are changed. Finally, the correlation between the device performance in all ohmic devices and the interfacial property of the $Rb_2CO_3$-doped $C_{60}$ thin film was discussed with an energy band diagram.

• Restorative Dentistry and Endodontics
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• 제22권1호
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• pp.470-478
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• 1997

The purpose of this study was to investigate the effects of moistening mechods of dentin on the morphologic states of hybrid layers and on the interfacial bond strength between dentin and composite. Specimens were divided into 6 groups based on the surface moistening methods and materials used. After the dentin surface was conditioned with 10 % phoporic acid and irrigated: 1. The dentin surface was dried. Then bonding agent and composite were applied. 2. The dentin surface was blot-dryed. Then primer, bonding atent and composite were applied. 3. The dentin surface was dryed first. Within 20 seconds, the surface was rewetted, then primer, bonding agent and composite were applied. 4. The dentin surface was dryed. Then primer, bonding agnent and composite were applied. 5. The dentin surface was dryed first. Atter 24hrs, the surface was rewetted, and then primer, bonding agent and composite were applied. 6. The surface was conditioned with NaOCl for 5min. Then primer, bonding agent and composite were applied. To reveal the hybrid layer, scanning electron microscopy was used after the samples were ion beam etched. The shear bond strength of each group was tom pared by ANOVA. In groups 2, 3 and 4, the hybrid layer was clearly visible, but the width was more limited in group 4. In group 1 and 5, the hybrid layer was not found, and a gap was formed between dentin and composite. In group 6, the hybrid layer was not found, but the interface between the dentin and composite was intimate. The shear bond strength of each group was as follows: Group 1 : 4MPa, Group 2 : 14MPa, Group 3 : 12MPa, Group 4 : 14MPa, Group 5 : 5MPa, Group 6 : 9MPa.

• Journal of Electrochemical Science and Technology
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• 제1권1호
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• pp.50-56
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• 2010

$La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-\delta}$ (LSCF) powders with different particle sizes, synthesized through a citrate complexation method and a gel-casting technique, are used to fabricate porous LSCF cathodes with graded microstructures via tape casting. To create porous electrodes with desired porosity and pore structures, graphite and starch are used as pore former for different layers of the graded cathode. Examination of the microstructures of the as-prepared LSCF cathode using an SEM revealed that both grain size and porosity changed gradually from the catalytically active layer (near the electrodeelectrolyte interface) to the current collection layer (near the electrode-interconnect interface). Impedance analysis showed that a 3-layer LSCF cathode with graded microstructures exhibited much-improved performance compared to that of a single-layer LSCF cathode, corresponding to interfacial resistance of 0.053, 0.11, and 0.27 $\Omega{\cdot}cm^2$ at 800, 750, and $700^{\circ}C$ respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.180-180
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• 2010

Thin film transistors (TFTs) based on oxide semiconductors have emerged as a promising technology, particularly for active-matrix TFT-based backplanes. Currently, an amorphous oxide semiconductor, such as InGaZnO, has been adopted as the channel layer due to its higher electron mobility. However, accurate and repeatable control of this complex material in mass production is not easy. Therefore, simpler polycrystalline materials, such as ZnO and $SnO_2$, remain possible candidates as the channel layer. Inparticular, ZnO-based TFTs have attracted considerable attention, because of their superior properties that include wide bandgap (3.37eV), transparency, and high field effect mobility when compared with conventional amorphous silicon and polycrystalline silicon TFTs. There are some technical challenges to overcome to achieve manufacturability of ZnO-based TFTs. One of the problems, the stability of ZnO-based TFTs, is as yet unsolved since ZnO-based TFTs usually contain defects in the ZnO channel layer and deep level defects in the channel/dielectric interface that cause problems in device operation. The quality of the interface between the channel and dielectric plays a crucial role in transistor performance, and several insulators have been reported that reduce the number of defects in the channel and the interfacial charge trap defects. Additionally, ZnO TFTs using a high quality interface fabricated by a two step atomic layer deposition (ALD) process showed improvement in device performance In this study, we report the fabrication of high performance ZnO TFTs with a $Si_3N_4$ gate insulator treated using plasma. The interface treatment using electron cyclotron resonance (ECR) $O_2$ plasma improves the interface quality by lowering the interface trap density. This process can be easily adapted for industrial applications because the device structure and fabrication process in this paper are compatible with those of a-Si TFTs.

• 한국재료학회지
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• 제29권5호
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• pp.282-287
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• 2019

The photovoltaic properties of $TiO_2$ used for the electron transport layer in perovskite solar cells(PSCs) are compared according to the particle size. The PSCs are fabricated and prepared by employing 20 nm and 30 nm $TiO_2$ as well as a 1:1 mixture of these particles. To analyze the microstructure and pores of each $TiO_2$ layer, a field emission scanning electron microscope and the Brunauer-Emmett-Teller(BET) method are used. The absorbance and photovoltaic characteristic of the PSC device are examined over time using ultraviolet-visible-near-infrared spectroscopy and a solar simulator. The microstructural analysis shows that the $TiO_2$ shape and layer thicknesses are all similar, and the BET analysis results demonstrate that the size of $TiO_2$ and in surface pore size is very small. The results of the photovoltaic characterization show that the mean absorbance is similar, in a range of about 400-800 nm. However, the device employing 30 nm $TiO_2$ demonstrates the highest energy conversion efficiency(ECE) of 15.07 %. Furthermore, it is determined that all the ECEs decrease over time for the devices employing the respective types of $TiO_2$. Such differences in ECE based on particle size are due to differences in fill factor, which changes because of changes in interfacial resistance during electron movement owing to differences in the $TiO_2$ particle size, which is explained by a one-dimensional model of the electron path through various $TiO_2$ particles.

• 한국재료학회지
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• 제29권5호
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• pp.322-327
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• 2019

Hole carrier selective MoOx film is obtained by atomic layer deposition(ALD) using molybdenum hexacarbonyl[$Mo(CO)_6$] as precursor and ozone($O_3$) oxidant. The growth rate is about 0.036 nm/cycle at 200 g/Nm of ozone concentration and the thickness of interfacial oxide is about 2 nm. The measured band gap and work function of the MoOx film grown by ALD are 3.25 eV and 8 eV, respectively. X-ray photoelectron spectroscopy(XPS) result shows that the $Mo^{6+}$ state is dominant in the MoOx thin film. In the case of ALD-MoOx grown on Si wafer, the ozone concentration does not affect the passivation performance in the as-deposited state. But, the implied open-circuit voltage increases from $576^{\circ}C$ to $620^{\circ}C$ at 250 g/Nm after post-deposition annealing at $350^{\circ}C$ in a forming gas ambient. Instead of using a p-type amorphous silicon layer, high work function MoOx films as hole selective contact are applied for heterojunction silicon solar cells and the best efficiency yet recorded (21 %) is obtained.

• Composites Research
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• 제34권1호
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• pp.47-50
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• 2021

본 논문은 차량에 사용되는 B필러의 강화재를 기존의 스틸 소재에서 CFRP(Carbon Fiber Reinforced Plastics)와 GFRP(Glass Fiber Reinforced Plastics)로 대체하여 경량화하는 것이 목표다. 이를 위해서는 무게는 감소시키면서 기존 B필러를 대체할 수 있는 구조안정성을 확보해야 한다. 기존 B필러는 스틸 아우터(outer)를 포함하여 다양한 형상의 스틸 강화재로 구성되며, 이와 같은 스틸 강화재 중 2가지의 스틸 강화재를 복합재로 대체하고자 한다. 이와 같은 스틸 강화재는 강화재 각각을 따로 제작하여 용접을 통해 결합되지만, 복합재 강화재는 패치(patch) 형태의 CFRP와 리브(rib) 구조의 GFRP를 활용하여 압축과 사출 공정을 통해 한번에 제작된다. CFRP는 B필러의 고강도부에 부착되어 측면 하중에 저항하도록 하였으며, GFRP 리브는 위상 최적화(Topology optimization) 기법을 통해 비틀림과 측면 하중을 저항하도록 설계하였다. 구조해석을 통해 기존 스틸 강화재와 비교 분석을 수행하였고, 경량화율을 산출하였다.

• 한국표면공학회지
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• 제53권6호
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• pp.293-299
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• 2020

The characteristics of the polycarbosilane (PCS)-based composite ceramic layer was studied by controlling the curing temperature. The stress at the interface of the graphite and SiOC composite layer was evaluated v ia finite element analysis. As a result, the tensile stress was released as the carbon ratio of the SiC decreases. In experiment, the SiOC layers were coated on the VDR graphite block by dip-coating process. It was revealed that the composition of Si and C was effectively adjusted depending on the curing temperature. As the solution-based process is employed, the surface roughness was reduced for the appropriate PCS curing temperature. Hence, it is expected that the cured SiOC layer can be utilized to reduce cracking and peeling of SiC ceramic composites on graphite mold by improving the interfacial stress and surface roughness.

• 멤브레인
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• 제33권6호
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• pp.383-389
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• 2023

폴리에틸렌 글라이콜 다이아크릴레이트 (polyethylene glycol diacrylate, PEGDA) 하이드로젤을 정삼투 (forward osmosis, FO) 분리막의 지지체로 사용하여 고성능의 FO 분리막을 제조하였다. 친수성의 PEGDA를 자외선 조사를 통한 중합과 그에 따른 상분리를 이용하여 다공성으로 구조화하였고, 매우 높은 친수성을 가진 하이드로젤 지지체를 얻을 수 있었다. 제조된 친수성 PEGDA 지지체 위에 높은 수투과도와 염 선택도를 확보하기 위해서 일반적인 계면중합 방식이 아닌 톨루엔을 유기 용매로 사용한 계면중합 방식(TIP)으로 선택층을 도입하였다. 제조된 PEGDA 지지체 기반 분리막은 1.0 M NaCl 유도 용액과 증류수 유입수를 통한 FO 성능 측정에서 상용 HTI 분리막들에 비해서 매우 높은 수투과도와 낮은 염 선택도를 나타내었다. 본 연구를 통해, 기존의 소수성 지지체를 추가적으로 개질하는 방식이 아닌 새로운 물질과 제조방식을 사용한 FO 지지체의 가능성을 제시하고자 한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.232-232
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• 2012

The doping of semiconducting elements is essential for the development of silicon quantum dot (QD) solar cells. Especially the doping elements should be activated by substitution at the crystalline sites in the crystalline silicon QDs. However, no analysis technique has been developed for the analysis of the activated dopants in silicon QDs in $SiO_2$ matrix. Secondary ion mass spectrometry (SIMS) is a powerful technique for the in-depth analysis of solid materials and the impurities analysis of boron and phosphorus in semiconductor materials. For the study of diffusion behaviour of B and P by SIMS, Si/$SiO_2$ multilayer films doped by B or P were fabricated and annealed at high temperatures for the activated doping of B and P. The distributions of doping elements were analyzed by SIMS. Boron found to be preferentially distributed in Si layer rather than the $SiO_2$ layer. Especially the B in the Si layers was separated to two components of an interfacial component and a central one. The central component was understood as the activated elements. On the other hand, phosphorus did not show any preferred diffusion.