• Journal of the Korean Ceramic Society
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• v.27 no.2
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• pp.219-225
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• 1990

Silicon dioxide thin film has been grown by a chemical vapor deposition (CVD) technique using SiH4, and O2 gaseous mixture on a silicon substrate. The experimental results indicated that the deposition rate as a function of the input ratio (O2/SiH4) shows two regions, increasing region and decreasing region. Also the deposition rate increases with increasing the deposition temperature. The microstructure of deposited silicon dioxide films is amorphous. The experimental results of infrared absorption spectrums indicate that Si-H and Si-OH bond increase with decreasing input ratio, but Si-O bond is independent on the input ratio. The interfacial charge of deposited silicon dioxide decreases with increasing input ratio.

• Computers and Concrete
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• v.21 no.1
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• pp.67-74
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• 2018

A differential scheme based micromechanical framework is proposed to obtain the effective properties of the saturated concrete repaired by the electrochemical deposition method (EDM) considering the interfacial transition zone (ITZ) effects. The constituents of the repaired concrete are treated as different phases, consisting of (micro-)cracks, (micro-)voids and (micro-)pores (occupied by water), deposition products, intrinsic concrete made up by the three traditional solid phases (i.e., mortar, coarse aggregates and their interfaces) and the ITZs. By incorporating the composite sphere assemblage (CSA) model and the differential approach, a new multilevel homogenization scheme is utilized to quantitatively estimate the mechanical performance of the repaired concrete with the ITZs. The CSA model is modified to obtain the effective properties of the equivalent particle, which is a three-phase composite made up of the water, deposition products and the ITZs. The differential scheme is employed to reach the equivalent composite of the concrete repaired by EDM considering the ITZ effects. Moreover, modification procedures considering the ITZ effects are presented to attain the properties of the repaired concrete in the dry state. Results in this study are compared with those of the existing models and the experimental data. It is found that the predictions herein agree better with the experimental data than the previous models.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.15.1-15.1
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 1994.02a
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• pp.139-140
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• 1994

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.86-86
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• 1993

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.275.1-275.1
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• 2014

The effects of the interfacial buffer layer and temperature on the organic bulk heterojunction (BHJ) nanostructures of copper phthalocyanine (CuPc) and fullerene (C60) systems were investigated using real time in-situ x-ray scattering. In the CuPc:C60 BHJ structures, standing-on configured ${\gamma}$-CuPc phase was formed by co-deposition of CuPc and C60. Once formed ${\gamma}$-phase was thermally stable during the annealing upon $180^{\circ}C$. Meanwhile, the insertion of CuI buffer layer prior to deposition of the CuPc:C60 BHJ layer induced lying-down configured CuPc crystals in the BHJ layer. The lying CuPc peak intensity and the lattice parameter were increased by the thermal annealing. This increment of the intensity seemed to be related to the strain at the interface between CuPc:C60 and CuI, which was proportional to the enhancement of the power conversion efficiency of the device.

• Tribology and Lubricants
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• v.4 no.2
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• pp.36-43
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• 1988

Titanium carbide(TiC) and titanium nitride(TiN) flims were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$ and $TiCl_4-H_2-N_2$ gas mixtures, respectively. The nonmetal to metal ratio of deposit increases with increasing $m_{C/Ti}$(mole ratio of CH$_4$ to TiCl$_4$ in the input) for TiC coatings and $m_{N/Ti}$(mole ratio of N$_2$ to TiCl$_4$ in the input) for TiN coatings. The nearly stoiahiometric films could be obtained under the deposition condition of $m_{C/Ti}$ between 1.15 and 1.61 for TiC, and that of $m_{N/Ti}$ between 25 and 28 for TiN. Also maximum microhardness of the coatings can be obtained in these ranges. The interfacial region of TiC coatings on $Si_3N_4$-TiC ceramics is wider than that of TiN coatings according to Auger depth profile analysis, which indicates good interfacial bonding for TiC. Experimental results show that TiC coatings have an randomly equiaxed structure and Columnar structure with(220) preferred orientation can be obtained for TiN coatings. And, multilayer coatings have a dense and equiaxed structure.

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.516-523
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• 1994

The interfacial coherency of metal organic chemical vapor deposition grown InGaAsP/InP heterostructure wafers was examined and their influences on the optoelectronic properties were investigated in this study. (400) symmetric and (511) asymmetric reflections were employed to measure the lattice coherency. Existence of misfit dislocations was examined by x-ray topography and reverified by photoluminescence (PL) imaging. PI, measurements were performed, and higher PL intensity was obtained for elastically strained samples and lower intensity for plastically deformed samples. The highest PL intensity was obtained for the sample lattice matched at the growth temperature. PL full-width at half maximum (FWHM) was found to depend on the degree of lattice mismatch. A correlatior between x-ray FWHM and PL intensity was empirically established. The results presented demonstrate that the interfacial coherency is of primary significance in affecting the optoelectronic properties through elastic strain and plastic deformation.

• Applied Science and Convergence Technology
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• v.23 no.1
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• pp.40-43
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• 2014

We investigated the growth characteristics and interfacial properties of $HfO_2$ films deposited on Ge substrate through atomic layer deposited (ALD) by using an in-situ medium energy ion scattering analysis. The growth kinetics of $HfO_2$ grown on a $GeO_2/Ge$ substrate through ALD is similar to that grown on an $SiO_2/Si$ substrate. However, the incubation period of $HfO_2$ deposition on Ge is shorter than that on Si. The $HfO_2$ grown on the GeO/Ge substrate shows a significant diffusion of Hf atoms into the substrate interface and GeO volatilization after annealing at $700^{\circ}C$. The presence of low-quality Ge oxide or suboxide may degrade the electrical performance of device.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.198-202
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• 2002

$HfO_2$films were grown on Si substrate in the temperature range $250~550^{\circ}C$ using metal organic chemical vapor deposition (MOCVD) technique for a gate dielectric. Hafnium tart-butoxide and Oxygen gas were used as precursors and N2 was used as carrier gas. Impurity distribution and film structure(including interfacial layer) were studied at the deposition temperature range between 25$0^{\circ}C$ and $550^{\circ}C$. The growth rate and impurty distribution decreased with increasing temperature. The electrical properties of $HfO_2$were investigated with C-V, 1-V method and showed it has a good properties as a gate dielectric.