• Restorative Dentistry and Endodontics
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• 제23권1호
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• pp.197-212
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• 1998

The purpose of this study was to evaluate the effects of fluoride application on the aspect of shear bond strength of three aesthetic restorative materials to dentin. One light-cured composite resin(Palfique Esterite) and two light-cured glass ionomer cements(Fuji II LC and Compoglass)were used in this study. 120 permanent molars were used for this study. The teeth were extracted due to the origin of periodontal disease. The crowns of all teeth were removed, and the remaining roots were embedded in epoxy resin. The mesial or distal surfaces of roots were ground flat to expose dentin and polished on wet 320-, 400-, and 600 grit SIC papers for a total of 120 prepared flat root dentin surfaces. The prepared samples were divided into six groups. Group 1, 3, and 5 were control groups and group 2, 4, and 6 were experimental groups. Sixty samples for experimental groups were treated with 2% NaF solution for 5 minutes. Group 1 and 2 were bonded with Plafique Esterite, group 3 and 4 were bonded with Fuji II LC, and group 5 and 6 were bonded with Compoglass. After 24 hours water storage at $37{\pm}1^{\circ}C$, all samples were subjected to a shear to fracture with Instron universal testing machine(No.4467) at 1.0 mm/min displacement rate. Dentin surfaces treated with each conditioners before bonding and interfacial layers between dentin and aesthetic restorative materials were observed under Scanning Electron Microscope(Hitachi S-2300) at 20Kvp. The data were evaluated statistically at the 95% confidence level with ANOVA test. The result were as follows; 1. Among the control groups, group 1 showed strongest bond strength and group 3 showed weakest. 2. Among the experimental groups, group 2 showed strongest bond strength and group 6 showed weakest. 3. Statistical analysis of the data showed that pretreatment of dentin with 2% NaF solution significantly decreased the bond strength of three aesthetic restorative materials to dentin(P<0.05). 4. SEM findings of fluoride treated dentin surfaces (2, 4, 6 group) demonstrated dentin surfaces covered with fluoridated reaction products. 5. Except group 4 and 6, resin tags were formed in all groups.

• Elastomers and Composites
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• 제39권3호
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• pp.217-227
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• 2004

주사슬에 triad 메소겐 단위와 butylene terephthalate (BT) 단위를 갖는 새로운 액정 중합체를 중축합에 의해서 합성하였다. 합성된 중합체는 nematic 액정상을 보였으며 액정상으로의 전이온도는 $260^{\circ}C$를 보였다. PBT 용액에서 in-situ 중합에 의해서 제조된 TLCP/PBT 블렌드들의 특성 조사는 DSC, TGA, SEM, XRD 그리고 DMTA를 이용하여 이루어 졌다. 블렌드들은 PBT 매트릭스내에서 $0.05{\sim}0.2{\mu}m$ 사이즈를 갖는 잘 분산된 TLCP상들을 보여 주었다. TLCP 농도가 5에서 20wt%로 증가함에 따라서 블렌드내의 순수한 PBT의 ${\Delta}Hm$은 증가하였다. 이는 TLCP가 PBT 매트릭스 내에서 조핵제의 역할을 하였기 때문이다. 블렌드의 기계적 성질들은 TLCP의 농도에 의존하였는데 이 또한 TLCP가 블렌드 내에서 보강제 역할을 하였기 때문이다. 액정상과 PBT 매트릭스 상간에 좋은 계면 접착력을 보여 주었으며 in-situ 중합에 의해서 제조된 블렌드는 용융 블렌딩에 의해서 제조된 블렌드들보다 더욱더 높은 기계적 성질과 잘 분산된 TLCP 도메인들을 보여 주었다.

• 대한금속재료학회지
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• 제49권2호
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• pp.180-186
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• 2011

Isothermal annealing and electromigration tests were performed at $125^{\circ}C$ and $125^{\circ}C$, $3.6{\times}10_4A/cm^2$ conditions, respectively, in order to compare the growth kinetics of the intermetallic compound (IMC) in the Cu/thin Sn/Cu bump. $Cu_6Sn_5$ and $Cu_3Sn$ formed at the Cu/thin Sn/Cu interfaces where most of the Sn phase transformed into the $Cu_6Sn_5$ phase. Only a few regions of Sn were not consumed and trapped between the transformed regions. The limited supply of Sn atoms and the continued proliferation of Cu atoms enhanced the formation of the $Cu_3Sn$ phase at the Cu pillar/$Cu_6Sn_5$ interface. The IMC thickness increased linearly with the square root of annealing time, and increased linearly with the current stressing time, which means that the current stressing accelerated the interfacial reaction. Abrupt changes in the IMC growth velocities at a specific testing time were closely related to the phase transition from $Cu_6Sn_5$ to $Cu_3Sn$ phases after complete consumption of the remaining Sn phase due to the limited amount of the Sn phase in the Cu/thin Sn/Cu bump, which implies that the relative thickness ratios of Cu and Sn significantly affect Cu-Sn IMC growth kinetics.

• 전기화학회지
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• 제24권4호
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• pp.100-105
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• 2021

최근 리튬이차전지의 안전성을 향상시킨 전고체 전지가 많은 관심의 대상이 되고 있으나 전도성 세라믹 또는 고체 고분자 전해질을 적용한 고체전지는 높은 계면 저항, 부반응 등과 같은 문제점을 지니고 있어 전기화학적 특성이 낮다. 기존 전고체 전지의 이러한 문제점을 해결하기 위하여 복합고체 전해질이 제안되었으며 본 연구에서는 나시콘 구조의 나노 입자 Li_1.5Al_0.5Ti_1.5P₃O₁₂ (LATP) 전도성 세라믹, PVdF-HFP, 카보네이티 기반 액체전해질을 복합화 하여 유사고체 전해질을 제작하였다. 이 복합고체 전해질은 5.6 V의 높은 전압 안전성을 가지며 리튬이온의 탈리-착리 테스트에서 리튬 금속전극의 덴드라이트 성장 억제 효과가 있음을 보여준다. 또한 복합고체 전해질을 적용한 LiNi_0.83Co_0.11Mn_0.06O₂ (NCM811)기반 전지에서 4.8 V의 높은 충전 종지 전압에도 241.5 mAh/g의 높은 방전 용량을 나타내며 안정적인 전기화학 반응이 일어난다. NCM811 기반 전지의 90도 충전-방전 중에도 전지의 단락이나 폭발 없이 139.4 mAh/g 방전 용량을 보인다. 따라서 LATP기반 복합고체 전해질은 리튬이차전지의 안전성과 전기화학적 특성을 향상 시킬 수 있는 효과적인 방법임을 알 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.