• Elastomers and Composites
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• v.39 no.3
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• pp.217-227
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• 2004

A new thermotropic liquid crystalline polymer(TLCP) containing a triad aromatic ester type mesogenic unit and butylene terephthalate unit(BT) in the main chain was synthesized by polycondensation reaction. The TLCP synthesized showed nematic mesophasic behavior and its transition temperature from solid to mesophase was $260^{\circ}C$. The TLCP/PBT blends were prepared by in-situ polymerization in PBT solution and characterized by differential scanning calorimeter(DSC), thermogavimetric analyzer(TGA), scanning electron microscope(SEM), x-ray diffractometer(XRD), and dynamic mechanical thermal analyze, (DMTA). The blends showed well dispersed TLCP phases with domain sizes $0.05{\sim}0.2{\mu}m$ in the PBT matrix. As the increasing TLCP content from 5 to 20 wt%, ${\Delta}Hm$ values of pure PBT in the blend were increased because TLCP acts as a nucleating agent in the PBT matrix. The mechanical properties of the blends depended on the TLCP contents because the TLCP acted effectively as a reinforcing material in the PBT matrix. The blends showed good interfacial adhesion between the TLCP phase and PBT matrix.The blends prepared by in-situ polymerization showed higher mechanical properties and well dispersed TLCP domains than those of the blends prepared by melt blending.

• Korean Journal of Metals and Materials
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• v.49 no.2
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• pp.180-186
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• 2011

Isothermal annealing and electromigration tests were performed at $125^{\circ}C$ and $125^{\circ}C$, $3.6{\times}10_4A/cm^2$ conditions, respectively, in order to compare the growth kinetics of the intermetallic compound (IMC) in the Cu/thin Sn/Cu bump. $Cu_6Sn_5$ and $Cu_3Sn$ formed at the Cu/thin Sn/Cu interfaces where most of the Sn phase transformed into the $Cu_6Sn_5$ phase. Only a few regions of Sn were not consumed and trapped between the transformed regions. The limited supply of Sn atoms and the continued proliferation of Cu atoms enhanced the formation of the $Cu_3Sn$ phase at the Cu pillar/$Cu_6Sn_5$ interface. The IMC thickness increased linearly with the square root of annealing time, and increased linearly with the current stressing time, which means that the current stressing accelerated the interfacial reaction. Abrupt changes in the IMC growth velocities at a specific testing time were closely related to the phase transition from $Cu_6Sn_5$ to $Cu_3Sn$ phases after complete consumption of the remaining Sn phase due to the limited amount of the Sn phase in the Cu/thin Sn/Cu bump, which implies that the relative thickness ratios of Cu and Sn significantly affect Cu-Sn IMC growth kinetics.

• Journal of the Korean Electrochemical Society
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• v.24 no.4
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• pp.100-105
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• 2021

Recently, all-solid-state batteries have attracted much attention to improve safety of rechargeable lithium batteries, but the solid-state batteries of conductive ceramics or solid polymer electrolytes show poor electrochemical properties because of several problems such as high interfacial resistance and undesired reactions. To solve the problems of the reported all-solid-state batteries, a hybrid solid electrolyte is suggested, in this study, NASICON-type nanoparticle Li_1.5Al_0.5Ti_1.5P₃O₁₂ (LATP) conductive ceramic, PVdF-HFP, and a carbonate-based liquid electrolyte were composited to prepare a quasi-solid electrolyte. The hybrid solid electrolyte has a high voltage stability of 5.6 V and shows an suppress effect of lithium dendrite growth in the stripping-plating test. The LiNi_0.83Co_0.11Mn_0.06O₂ (NCM811)-based battery with the hybrid solid electrolyte exhibits a high discharge capacity of 241.5 mAh/g at a high charge-cut-off voltage of 4.8V and stable electrochemical reaction. The NCM811-based battery also shows 139.4 mAh/g discharge capacity without short circuit or explosion at 90℃. Therefore, the LATP-based hybrid solid electrolyte can be an effective solution to improve the safety and electrochemical properties of rechargeable lithium batteries.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.