• Structural Engineering and Mechanics
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• 제23권1호
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• pp.43-61
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• 2006

An investigation of the effectiveness of the interface treatment when column concrete jacketing is performed is presented. Alternative methods of interface connection were used in order to investigate the performance of strengthened concrete columns. These connecting techniques involved roughening the surface of the original column, embedding steel dowels into the original column and a combination of these two techniques. The experimental program included three strengthened specimens, one original specimen (unstrengthened) and one as-built specimen (monolithic). The specimens represented half height full-scale old Greek Code (1950's) designed ground floor columns of a typical concrete frame building. The jackets of the strengthened specimens were constructed with shotcrete. All specimens were subjected to displacement controlled earthquake simulation loading. The seismic performance of the strengthened specimens is compared to both the original and the monolithic specimens. The comparison was performed in terms of strength, stiffness and hysteretic response. The results demonstrate the effectiveness of the strengthening methods and indicate that the proper construction of a jacket can improve the behaviour of the specimens up to a level comparable to monolithic behaviour. It was found that different methods of interface treatment could influence the failure mechanism and the crack patterns of the specimens. It was also found that the specimen that combined roughening with dowel placement performed the best and all strengthened columns were better at dissipating energy than the monolithic specimen.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.78-81
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• 2004

In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. Surface structure and adhesion of semiconductive silicon rubber by surface asperity was obtained from SEM and T-peel test. In addition, ac breakdown test was carried out for elucidating the change of electrical property by roughness treatment. From the results, Adhesive strength of semiconductive-insulation interface was increased with surface asperity. Dielectric breakdown strength by surface asperity decreased than initial Specimen, but increased from Sand Paper #1200. According to the adhesional strength data unevenness and void formed on the silicone rubber interface expand the surface area and result in improvement of adhesion. Before treatment Sand Paper #1200, dielectric breakdown strength was decreased by unevenness and void which are causing to have electric field mitigation small. After the treatment, the effect of adhesion increased dielectric breakdown strength. It is found that ac dielectric breakdown strength was increased with improving the adhesion between the semiconductive and insulating interface.

• 열처리공학회지
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• 제11권3호
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• pp.186-191
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• 1998

An oxidation behavior of 304 and 316 stainless steels were studied in dry air. After solution treatment, specimens were polished up to $1{\mu}m$ $A1_2O_3$ grade and then subjected to oxidation treatment in dry air at $800^{\circ}C{\sim}1200^{\circ}C$. The oxidation behavior between matrix and oxide scale was analyzed with SEM, EDS and XRD. When oxidation treatment was conducted at $1200^{\circ}C$, large thickness of Fe oxide scale was formed on top of surface and fine $(Cr,Fe)_2O_3$ oxide film was formed below it. Cr rich zone existed at interface between metal and $(Cr,Fe)_2O_3$ oxide layer, and it was believed that this zone acted as obstacle to oxidation. Most of Ni was detected at the interface between metal and $(Cr,Fe)_2O_3$ and also detected at the interface between $Fe_2O_3$ and $(Cr,Fe)_2O_3$.

• Tribology and Lubricants
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• 제39권1호
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• pp.8-12
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• 2023

This study presents a molecular simulation of adhesion control between carbon nanotube (CNT) and Ag thin film deposited on silicon substrate. Rough and flat Ag thin film models were prepared to investigate the effect of surface roughness on adhesion force. Heat treatment was applied to the models to modify the adhesion characteristics of the Ag/CNT interface based on thermal wetting. Simulation results showed that the heat treatment altered the Ag thin film morphology by thermal wetting, causing an increase in contact area of Ag/CNT interface and the adhesion force for both the flat and rough models changed. Despite the increase in contact area, the adhesion force of flat Ag/CNT interface decreased after the heat treatment because of plastic deformation of the Ag thin film. The result suggests that internal stress of the CNT induced by the substrate deformation contributes in reduction of adhesion. Contrarily, heat treatment to the rough model increases adhesion force because of the expanded contact area. The contact area is speculated to be more influential to the adhesion force rather than the internal stress of the CNT on the rough Ag thin film, because the CNT on the rough model contains internal stress regardless of the heat treatment. Therefore, as demonstrated by simulation results, the heat treatment can prevent delamination or wear of CNT coating on a rough metallic substrate by thermal wetting phenomena.

• 한국표면공학회지
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• 제29권4호
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• pp.238-252
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• 1996

In order to study the effect of interface oxides on the adhesion strength of the copper/epoxy system, copper foils were immersed in black oxide or brown oxide forming solutions before lamination with epoxy prepregs, and variation of peel strength with the treatment time were investigated. Results showed that peel strength decreased rapidly up to 1 minute of treatment lime and remained constant in the case of the black oxide treated specimens, which was accompanied by the thickening of $Cu_2O$ at the Copper/Epoxy interface during the period. In contrast, peel strength increased rapidly up to 1 minute of treatment time and remained constant in the case of the brown oxide treated specimens, which could be ascribed to the thickening of CuO. Subsequent heat treatments of the Copper/Epoxy laminations at $120^{\circ}C$ in air showed that peel strength remained constant in the case of the black oxide treated specimens but decreased gradually in the case of the brown oxide treated specimens. Following XPS analyses revealed that the latter was possibly caused by the coalescence of CuO at the Copper/Epoxy interface into $Cu_2O$.

• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.1014-1018
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• 2005

The purpose of this study is to obtain strong bond strength at the interface between piezoelectric substrates and semiconductor thin films to be applied for the manufacture of high-performance acoustic wave semiconductor coupled device. For this purpose, we have compared and examined the effects of different surface treatment methods on hydrophile properties at the surface of the piezoelectric substrates. Moreover, we have observed the effect of microwave and laser on the elimination of water molecules at the interface. As for the piezoelectric substrates, dry method for surface treatment was found to be superior in the control of hydrophilicity of the surface compared to wet method. On the other hand, both microwave and laser were found to be effective in the elimination of water molecules in the interface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.254-255
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• 2005

In this work, the effects of plasma treatment on surface properties of semi conductive silicone rubber were investigated in terms of X-ray photoelectron spectroscopy(XPS). The adhesion characteristics of semiconductive-insulating interface layer of silicone rubber were studied by measuring the T-peel strengths. As a result, semiconductive silicone rubber surfaces treated with plasma discharge led to and increase in oxygen-containing functional groups, resulting in improving the degree of adhesion of the semiconductive-insulating interface layer of silicone rubber. these results are probably due to the modifications of surface functional groups or polar component of surface free energy of the semi conductive silicone rubber.

• 열처리공학회지
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• 제32권2호
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• pp.79-85
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• 2019

To investigate the influence of heat treatment on the growth intermetallic compounds (IMCs) at the joint interface of friction-welded Cu-Al, several heat treatments are performed at three different temperature with different times. The experiments reveal three different IMCs layers which are significantly influenced by atomic diffusion of Cu and Al with heat treatment conditions. Since the formation of these IMCs layers can affect mechanical properties of friction-welded Cu-Al interfaces, the relationship between the microstructure of IMCs layers and the tensile strength is analyzed according to heat treatment temperature and times.

• Bulletin of the Korean Chemical Society
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• 제35권8호
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• pp.2277-2280
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• 2014

The contact properties between gold and poly(3-hexylthiophene) (P3HT) films having either of two distinct molecular orientations and orderings were investigated. Thermal treatment increased the molecular ordering of P3HT and remarkably reduced the contact resistance at the electrode/semiconductor interface, which enhanced the electrical performance. This phenomenon was understood in terms of a small degree of metal penetration into the P3HT film as a result of the thermal treatment, which formed a sharp interface at the contact interface between the gold electrode and the organic semiconductor.

• 연구논문집
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• 통권25호
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• pp.185-192
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• 1995

The solid/liquid interface migration in Nb-doped $SrTiO_3$ and its effect on dielectric properties have been investigated. The specimen sintered in air shows no migration during oxide infiltration treatment in air, whereas the specimen sintered in $5H_2-95N_2$ shows appreciable migration during similar infiltration. In the migrated layers of the specimen sintered in a reducing atmosphere, no cations of the infiltrants are detected by wavelength dispersive spectroscopy. These results show that nonstoichiometry due to the atmosphere change can induce the interface migration as in the case of frequently observed migrations due to solute concentration change. The driving force for the migration is discussed in terms of the coherency strain energy in a thin diffusional oxidized layer of the receding grain. The interface migration caused by nonstoichiometry could be suppressed by preoxidizing grain surfaces before oxide infiltration treatment. The suppression of migration increased the effective dielectric constant of the material.