• Journal of the Korean Magnetics Society
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• v.18 no.5
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• pp.185-189
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• 2008

We observe the change of coercivity and exchange bias, depending on inserting material and thickness in a [Pd(0.6 nm)/$Co(0.2)]_5$/ FeMn(10) multilayer structure with perpendicular anisotropy. When 0.78 and 1.28 nm thick NiFe substitutes for Co in a $[Pd(0.6 nm)Co(0.2)]_4$/Pd(0.6)/NiFe(t)/FeMn(10) structure, we obtain the exchange bias of 360 Oe. In addition, when $Co_8Fe_2$ and $Co_9Fe_1$ are inserted for Co/FeMn interface, we obtain the exchange bias of 380 nm for a 0.68 nm thick $Co_8Fe_2$ and 580 Oe for a 0.52 nm thick $Co_9Fe_1$.

• Journal of the Korean Magnetics Society
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• v.23 no.6
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• pp.184-187
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• 2013

The influence of insertion of an ultra-thin Cu-Phthalocyanine (CuPc) between MgO barrier and ferromagnetic layer in magnetic tunnel juctions (MTJs) was investigated. In order to understand the relation between the electronic and structural properties of Fe${\backslash}$MgO${\backslash}$CuPc, the surface (or interface) analysis was carried out systematically by using spin polarized metastable He de-excited spectroscopy for the CuPc films grown on the Si(001)${\backslash}$5 nm MgO(001)${\backslash}$7 nm Fe(001)${\backslash}$1.6 nm MgO(001) multilayer structure as the thickness of CuPc increases from 0 to 5 nm. In particular, for the 1.6 nm CuPc surface, a rather strong spin asymmetry between up- and down-spin band appears while it becomes weaker or disappears for the CuPc films thinner or thicker than ~1.6 nm. Our results emphasize the importance of the interfacial electronic properties of organic layers in the spin transport of the hybrid MTJs.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.7-11
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• 2014

Recently, the buffer layers consisting of poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate) (PEDOT-PSS) are extensively used to improve power conversion efficiency (PCE) of organic solar cells. However, PEDOT-PSS is not suitable for mass production of organic solar cells due to its intrinsic acid and hygroscopic properties. Moreover, because of chemical reactions between indium tin oxide (ITO) layer and PEDOT-PSS layer, the interface is not stable. For these reasons, alternative materials such as $V_2O_5$ have been developed to be an effective buffer layer. In this work, we used $V_2O_5$/Ag/ITO multilayer structure for the anode buffer layer. With variation of thickness of Ag layer, we investigated the optical and electrical properties of $V_2O_5$/Ag/ITO multi-layer films. As a result, we found that the electrical properties were improved with increasing Ag thickness while optical transmittance decreases in visible wavelength region. From the calculation of figure of merit (FOM) which is used to evaluate proper structure for transparent of optoelectronic, $V_2O_5$/Ag/ITO multilayer electrode was optimized with 4 nm thick Ag layer in optical (88% in transmittance) and electrical ($4{\times}10^{-4}{\Omega}cm$) properties. This indicates that $V_2O_5$/Ag/ITO multilayer electrode could be a candidate for the anode of optoelectronic devices.

• Journal of the Korean Magnetics Society
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• v.11 no.2
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• pp.72-77
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• 2001

Top spin valve films with PtMn antiferromagnetic layers were deposited using a multi-target dc magnetron sputtering in (100)Si substrates overcoated with 500 $\AA$ of Al$_2$O$_3$. Firstly, the post-deposition annealing was performed at 270$\^{C}$ in a unidirectional magnetic field of 3 kOe to induce the crystallographic transformation of the PtMn layer from a fcc (111) to a fct (111) structure. Secondly, the spin valve films were annealed without magnetic fields and magnetic properties were measured. In Si/A1$_2$O$_3$ (500$\AA$)/Ta(50$\AA$)NiFe(40$\AA$)/CoFe(17$\AA$)/Cu(28$\AA$)/CoFe (30$\AA$)PtMn(200$\AA$)Ta(50$\AA$) top spin valve samples, the MR ratio decreased slowly with increasing annealing temperature up to 325$\^{C}$. But above 325$\^{C}$, the MR ratio decreased rapidly to 1%, due to a collapse of the exchange coupling between a antiferromagnetic layer and a pinned layer with increasing annealing temperature. Also above 325$\^{C}$, the exchange biased field rapidly decreased and the interlayer coupling field rapidly increased with increasing annealing temperature. A change in the interlayer coupling field was resulted from the increase in interface roughness due to Mn-interdiffusion through the grain boundaries. We confirmed the temperature in changing magnetic properties agreed well with the blocking temperature of PtMn based spin valve structure.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.2
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• pp.49-54
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• 2003

We have investigated the effects of hydrogen annealing on the physical and electrical properties of $SrBi_{2}Ta_{2}O_9(SBT)$ thin films in the Pt/SBT/Si (MFS) structure and Pt/SBT/Pt (MFM) one, respectively. The microstructure and electrical characteristics of the SBT films were deteriorated after hydrogen annealing due to the damage of the SBT films during the annealing process. To investigate the reason of the degradation of the SBT films in this work, in particular, the effect of the Pt top electrodes, SBT thin films deposited on Si, Pt, respectively, were annealed with the same process conditions. From the XRD, XPS, P-V, and C-V data, it was seen that the SBT itself was degraded after $H_2$ annealing even without the Pt top electrodes. In addition, the degradation of the SBT films after $H_2$ annealing was accelerated by the catalytic reaction of the Pt top electrodes which is so-called hydrogen degradation. To prevent this phenomenon, we proposed the alternative top electrode material, i.e. Ir, and the electrical properties of the SBT thin films were examined in the $Ir/IrO_2/SBT/IrO_2$ structures before and after the H$_2$ annealing and recovery heat-treatment processes. From the results of the P-V measurement, it could be concluded that Ir is one of the promising candidate as the electrode material for degradation resistance in the MFM structure using SBT thin films.

• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.104-109
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• 2005

To study the role of PbO as the buffer layer, Pt/PZT/PbO/Si with the MFIS structure was deposited on the p-type (100) Si substrate by the r.f. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ and PbO targets. When PbO buffer layer was inserted between the PZT thin film and the Si substrate, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. From the result of an X-ray Photoelectron Spectroscopy (XPS) depth profile result, we could confirm that the substrate temperature for the layer of PbO affects the chemical states of the interface between the PbO buffer layer and the Si substrate, which results in the inter-diffusion of Pb. The MFIS with the PbO buffer layer show the improved electric properties including the high memory window and low leakage current density. In particular, the maximum value of the memory window is 2.0V under the applied voltage of 9V for the Pt/PZT(200 nm, $400^{\circ}C)/PbO(80 nm)/Si$ structures with the PbO buffer layer deposited at the substrate temperature of $300^{\circ}C$.

• Journal of the HCI Society of Korea
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• v.5 no.2
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• pp.7-14
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• 2010

Urban Data collected through Sensor Network is becoming crucial to understand and analyse a city. Thus, the Ubiquitous Sensor Network builds the foundation of the u-City development. This research aims to develop an energy monitoring application with an intuitive visualization environment which integrates energy usage information on top of urban geospatial information. Such a system will be able to facilitate effective energy supply plan at the early stages of urban planning, and eventually to encourage citizens to conserve energy by giving them real time monitoring information in an easy to understand visual environment. The system provides multiple layers of energy-related information coupled with the geospatial information layer in order to accommodate multiple viewpoints. On the other hand, the system provides logical Level of Detail control based on urban spatial information hierarchy. We defined the system concept and functions, and designed the data structure and the methods of information visualization. This paper presents the visualization methods, data structure, interactions scenarios which combines spacial information, E-GIS data and the energy related sensor data. Furthermore this research tries to introduce the concept of Social Sensor Networking to enhance the monitoring quality.

• The Journal of the Korea Contents Association
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• v.15 no.6
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• pp.616-631
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• 2015

This study proposes a mobile Augmented Reality (AR)-based "word card" learning tool for children aged 3 to 5. First, this study suggests a learning structure to improve motivation and immersion of learning, Secondly, it designs and implements the user interface applying the proposed learning structure. Also, it designs a content management tool supporting the production of the content so that instructors can easily manage the contents for various learners. This study is conducted by four steps - reference research, design of "word card" learning content for the learner, design of content management tool for the instructor and the effectiveness verification of the proposed content. The proposed content was designed based on an education content architecture for enhancement of immersion and motivation to study. Moreover, it includes an 'AR content management tool for instructor' designed to easily update AR education content. The class for six children aged 3 to 5 was given to validate the enhancement of immersion to study. Experiment results showed that the proposed content enhanced the study immersion and that special interaction design for early children was necessary.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.2
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• pp.298-302
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• 2008

This study was carried out to evaluate brazing characteristics of the braze joint between superhard alloy particles and carbon steel. Two types of insert metals that made by mechanical alloying process were selected for this study. One is composed of Cu, Zn and Ag(MIM-1) and the other one is composed of Cu, Zn, Ag and Cd.(MIM-2) The chemical compositions of these insert metals were similar to AWS BAg-20 and BAg-2a system. And the commercial insert metals(CIM-1, CIM-2) were also evaluated for the comparative study. The characterization of the insert metals were conducted by wettability tests, shear tensile test and microstructural analyses. The results indicated that wettability tests displayed that MIM-1 and CIM-1 insert metals had the larger wetting angle than MIM-2 and CIM-2 and the wetting angle of the MIM-1 showed higher value than that of CIM-1. However these values are less than $25^{\circ}$ that is recommended for standard value for usual insert metals. The highest value of shear tensile tests was obtained from the brazed joint that made by MIN-1 and the value was $2.29{\times}10^2MPa$. This value is appeared to be higher or same as the commercial insert metals. The microstructures of the inserts metals were composed of Cu-rich proeutectic structure for matrix and Ag-rich eutectic structure. The braze joint between superhard alloy particles and carbon steel produced by the MIM-1(Ag-Cu-Zn) system showed sound joint showing stable microstructures. However there was also some porosities at the interface.

• Korean Journal of Materials Research
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• v.10 no.2
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• pp.160-165
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• 2000

We have investigated the electrical and diffusion barrier properties of MgO produced on the surface of Cu (Mg) alloy. Also the diffusion barrier property of the interfacial MgO between Cu alloy and $SiO_2$ has been examined. The results show that the $150\;{\AA}$-MgO layer on the surface remains stable up to $700^{\circ}C$, preventing the interdiffusion of C Cu and Si in Si/MgO/Cu(Mg) structure. It also has the breakdown voltage of 4.5V and leakage current density of $10^{-7}A/\textrm{cm}^2/$. In addition, the combined structure of $Si_3N4(100{\AA})/MgO(100{\AA})$ increases the breakdown voltage up to lOV and reduces the leakage current density to $8{\tiems}10^{-7}A/\textrm{cm}^2$. Furthermore, the interfacial MgO formed by the chemical reac­t tion of Mg and $SiO_2$ reduces the diffusion of copper into $SiO_2$ substrate. Consequently, Cu(Mg) alloy can be applied as a g gate electrode in TFT /LCDs, reducing the process steps.