• Journal of the Korean institute of surface engineering
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• v.51 no.4
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• pp.243-248
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• 2018

All solid state thin film batteries with two types of cell structure, Pt / $LiCoO_2$ / LiPON / Cu and Pt / $LiCoO_2$ / LiPON / $LiCoO_2$ / Cu, are prepared and their electrochemical performances are investigated to evaluate the effect of $LiCoO_2$ interlayer at the interface of LiPON / Cu. The crystallinity of the deposited $LiCoO_2$ thin films is confirmed by XRD and Raman analysis. The crystalline $LiCoO_2$ cathode thin film is obtained and $LiCoO_2$ as the interlayer appears to be amorphous. The surface morphology of Cu current collector after cycling of the batteries is observed by AFM. The presence of a 10 nm-thick layer of $LiCoO_2$ at the interface of LiPON / Cu enhances the interfacial adhesion and reduces the interfacial resistance. As a result, Li plating / stripping at the interface of LiPON / Cu during charge/discharge reaction takes place more uniformly on Cu current collector, while without the interlayer of $LiCoO_2$ at the interface of LiPON / Cu, the Li plating / stripping is localized on current collector. The thin film batteries with the interlayer of $LiCoO_2$ at the interface of LiPON / Cu exhibits enhanced initial coulombic efficiency, reversible capacity and cycling stability. The thickness of the anode current collector Cu also appears to be crucial for electrochemical performances of all solid state thin film batteries.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.365-368
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• 2002

We investigated the influence of RTP annealing of multi-layered metal films deposited on oxides layer. Two types of oxides, BPSG and P-7205, were used as a bottom layer under multi-layered metal film. The bonding was not good in metal/BPSG/Si samples because adhesion between metal layer and BPSG oxide layer was poor by interfacial reaction during RTP annealing above 650$^{\circ}C$. On the other hand bonding was always good in metal/ P-TEOS /Si samples regardless of annealing temperature. We observed the interface between oxide and metal layers using AES and TEM. The phosphorus and oxygen profile in interface between metal and oxide layers were different in metal/BPSG/Si and metal/P-TEOS/Si samples. We have known that the properties of interface was improved in metal/BPSG/Si samples when the sample was annealed below 650$^{\circ}C$.

• Nuclear Engineering and Technology
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• v.45 no.6
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• pp.707-720
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• 2013

We analyze piecewise homogenization with flux-weighted cross sections and preservation of averaged currents at the boundary of the homogenized domain. Introduction of a set of flux discontinuity ratios (FDR) that preserve reference interface currents leads to preservation of averaged region reaction rates and fluxes. We consider the class of numerical discretizations with one degree of freedom per volume and per surface and prove that when the homogenization and computing meshes are equal there is a unique solution for the FDRs which exactly preserve interface currents. For diffusion submeshing we introduce a Jacobian-Free Newton-Krylov method and for all cases considered obtain an 'exact' numerical solution (eight digits for the interface currents). The homogenization is completed by extending the familiar full assembly homogenization via flux discontinuity factors to the sides of regions laying on the boundary of the piecewise homogenized domain. Finally, for the familiar nodal discretization we numerically find that the FDRs obtained with no submesh (nearly at no cost) can be effectively used for whole-core diffusion calculations with submesh. This is not the case, however, for cell-centered finite differences.

• Proceedings of the KSME Conference
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• 2000.04a
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• pp.426-432
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• 2000

The hydraulic loading system real-time simulator using a PC and I/O interface board is developed to simulate the dynamic characteristics of hydraulic loading system in real time. The simulator receives the digital on-off control signals generated by the operator through the D/I channels, updates the state and output variables of the hydraulic loading system responding to the input signals and draw the moving pictuters of the lift cylinder, lift arm and loading box on the PC monitor in real time. Also, the operator can observe the displacement and pressure of cylinder, the rotatinal angle, reaction force, and safety factors of lift arm representing the operation of hydraulic loading system through the PC monitor in real time. The real-time simulator can be a very useful tool to design industrial dynamic systems and feel the goodness of the system operation since the operator can observe the moving pictures of the operating system in real time as he operates the real time simulator.

• Korean Journal of Materials Research
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• v.22 no.8
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• pp.385-389
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• 2012

Significant improvements in the switching voltage distribution are required for the development of unipolar resistive memory devices using $MnO_x$ thin films. The $V_{set}$ of the as-grown $MnO_x$ film ranged from 1 to 6.2 V, whereas the $V_{set}$ of the oxygen-annealed film ranged from 2.3 to 3 V. An excess of oxygen in an $MnO_x$ film leads to an increase in $Mn^{4+}$ content at the $MnO_x$ film surface with a subsequent change in the $Mn^{4+}/Mn^{3+}$ ratio at the surface. This was attributed to the change in $Mn^{4+}/Mn^{3+}$ ratios at the $MnO_x$ surface and to grain growth. Oxygen annealing is a possible solution for improving the switching voltage distribution of $MnO_x$ thin films. In addition, crystalline $MnO_x$ can help stabilize the $V_{set}$ and $V_{reset}$ distribution in memory switching in a Ti/$MnO_x$/Pt structure. The improved uniformity was attributed not only to the change of the crystallinity but also to the redox reaction at the interface between Ti and $MnO_x$.

• Journal of the Korean institute of surface engineering
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• v.30 no.6
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• pp.374-381
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• 1997

We have studied the effect of the interface between tungsten silicide and polysilicon the silicide reaction. The results showed that the cleaning of the silicon surface prior to the deposition of tungsten silicide affected the interface properties, thereby leading to the difference in the resistivity and surface morhpology of tungsten silicide. Compared with HF cleaning, the use of SCl cleaning yielded higher resistivity of tungsten silicide at the low anneal temperature (up to $900^{\circ}C$). However, furtherature to $1000^{\circ}C$ reduced the resistivity significantly, similar to that obtained with HF cleaning. It was also observed that the annealing of WSix/HF-cleaned poly-si allowed the formation of bucking weve (partially decohesion area) on the surface. In contrast, the use of SCl celaning did not produce the buckling waves on the surface. Also the presence of 200$\AA$ -thick TiW between tungsten silicide and HF-cleaned poly-Si effectively prevented the formation of the waves. However, high-temperature annealing of WSix/200A-TiW/Poly-Si allowed the excess silicon in tungsten silicide to precipitate inside the silcide, causing the slight increase of the resistivity after annealing at $1050^{\circ}C$.

• Journal of The Korea Institute of Healthcare Architecture
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• v.22 no.2
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• pp.15-23
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• 2016

Purpose: Planning space of the house is important as a universal place to relieve stress of contemporary people. Void space is easy to perform mental and cultural programs in aspect of affording the healing behavior. The "Interface" accommodates healing behaviors through mutual interchange between void space and solid space as the edge of the solid space around void space. This study presents a efficient theory of healing space through combining space theory with the Kitwood's theory of psychiatry used for the art therapy. Methods: Spatial elements based on Kitwood's theory converges towards 2 behavioral elements; Meditation(-), Sense of Community(+). Balancing with reciprocal complement between behaviors of passive and stable "Meditation(-)" and active and released "Sense of Community(+)" was analysed. Results: "Faciliation" can be used in combination with "Flow(+)" as active factor. "Validation" is combined with "Prospect(+,-)", and divides into 2 factor ; "Recognition-Refreshment(-)", "Reaction-Social Exchange(+)". "Holding" is combined with "Refuge(-)" as passive factor. Implications: This study established concept of spatial healing elements in connection with theory of Psychiatry about Alzheimer that is extreme situation of stress. This study is expected to enhance the validity and efficiency in analysis of healing space.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.392-392
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• 2010

In this study, high-speed chemical dry thinning process of Si wafer and evolution of surface roughness were investigated. Direct injection of NO gas into the reactor during the supply of F radicals from $NF_3$ remote plasmas was very effective in increasing the Si thinning rate due to the NO-induced enhancement of surface reaction but thinned Si surface became roughened significantly. Addition of Ar gas, together with NO gas, decreased root mean square (RMS) surface roughness of thinned Si wafer significantly. The process regime for the thinning rate enhancement with reduced surface roughness was extended at higher Ar gas flow rate. Si wafer thinning rate as high as $22.8\;{\mu}m/min$ and root-mean-squared (RMS) surface roughness as small as 0.75 nm could be obtained. It is expected that high-speed chemical dry thinning process has possibility of application to ultra-thin Si wafer thinning with no mechanical damage.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.187-187
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• 2010

In this study, we investigated the effect of electrodes on resistance switching of TaOx film. Pt, Ni, TiN, Ti and Al metal electrodes having the different oxidation degree were deposited on TaOx/Pt stack. Unipolar resistance switching behavior in Pt or Ni/TaOx/Pt MIM stacks was investigated, but bipolar resistance switching behavior in TiN, Ti or Al /TaOx/Pt MIM stacks was shown. We investigated that the voltage dependence of capacitance was decreased with higher oxidation degree of metal electrodes. Through the C-V results, we expected that linearity ($\alpha$) and quadratic ($\beta$) coefficient was reduced with an increase of interface layer between top electrode and Tantalum oxide. Transmission Electron Microscope (TEM) images depicted the thickness of interface layer formed with different oxidation degree of top electrode. Unipolar resistance switching behavior shown in lower oxidation degree of top electrode was expected to be generated by the formation of the conducting path in TaOx film. But redox reaction in interface between top electrode and Tantalum oxide may play an important role on bipolar resistance switching behavior exhibited in higher oxidation degree of top electrode. We expected that the resistance switching characteristics were determined by oxidation degree of metal electrodes.

• Journal of Industrial and Engineering Chemistry
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• v.67
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• pp.72-79
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• 2018

Hybrid F2HX surfactants bearing a sulfate moiety and both hydrocarbon and fluorocarbon chains were prepared by the reaction of alkyl glycidyl ethers with fluoro-alcohol, and subsequent sulfation. The fluorocarbon number in F2HX was fixed at the shortest number possible (i.e., 2), while the hydrocarbon number (X) in the second chain was varied between 2, 4, 6, and 8. Their surface-active properties and emulsion stabilities were systematically estimated as a function of the X. Among them, F2H8 exhibited the optimal surfactant performance, which was comparable to previously reported surfactants and it was successfully applied in the emulsion polymerization of vinylidene fluoride.