• Journal of Electrochemical Science and Technology
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• 제1권2호
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• pp.121-126
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• 2010

An amperometric ascorbic acid selective sensor utilizing the transfer reaction of proton liberated from the dissociation of ascorbic acid in aqueous solution across an elliptic micro-hole water/organic gel interface is demonstrated. This redox inactive sensing platform offers an alternative way for the detection of ascorbic acid to avoid a fouling effect which is one of the major concerns in redox based sensing systems. The detection principle is simply measuring the current change with respect to the assisted transfer of protons by a proton selective ionophore (e.g., ETH 1778) across the micro-hole interface between the water and the polyvinylchloride-2-nitrophenyloctylether gel phase. The assisted transfer reaction of protons generated from ascorbic acid across the polarized micro-hole interface was first characterized using cyclic voltammetry. An improved sensitivity for the quantitative analysis of ascorbic acid was achieved using differential pulse stripping voltammetry with a linear response ranging from 1 to $100\;{\mu}M$ concentrations of ascorbic acid. As a demonstration, the developed sensor was applied for analyzing the content of vitamin-C in different types of commercial pharmaceutical tablets and syrups, and a satisfactory recovery from these samples were also obtained.

• 감성과학
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• 제6권4호
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• pp.15-23
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• 2003

근래에 들어 질병으로 인하여 의사표현이 곤란한 환자에게 뇌파에 기초한 BCI(Brain Compute, Interface)와 같은 새로운 인터페이스를 제공하고자 하는 연구가 활발히 진행되고 있다. 특정 자극에 대해 유발되는 뇌파의 측정과 분석은 BCI를 위한 뇌파의 패턴과 인터페이스의 설계에 중요한 역할을 한다. 이 연구의 목적은 시청각 자극 인가 후 피험자의 반응시간을 측정하는 시스템을 EEG와 같은 생체 신호 계측 시스템과 연동이 가능한 형태로 개발하는 것이다. 제안된 시스템은 기능적으로 자극신호 발생부, 반응시간 측정부, 유발뇌파 측정부, 동기신호 발생부로 나뉘어진다. 자극신호 발생부는 실험에 이용되는 자극신호를 제작하는 부분으로서 Flash를 사용하여 구현하였다. 반응시간 측정부는 문제에 대한 답 선택 요청시각으로부터 피험자의 반응까지의 시간을 측정하는 부분으로서 마이크로컴퓨터를 이용하여 구현하였다. 유발뇌파 측정부는 시판용 하드웨어와 소프트웨어를 그대로 사용하였다. 동기신호 발생부는 전체 시스템의 동기를 맞추기 위한 신호를 발생하는 부분으로서 문제제시, 답 요구와 동기한 화면상의 명암신호와 이를 검출하는 광센서로 구성하였다. 본 논문에서 제시한 방법에서는, 기존의 유발전위 측정 및 자극시스템에 특정 모듈(반응시간 측정 장치, 동기신호 발생장치)만을 추가하여 실험자의 의도에 맞는 시스템을 설계할 수 있어 유발응답 및 반응시간의 측정을 필요로 하는 연구를 가속화 할 것이 기대된다.

• The Korean Journal of Ceramics
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• 제2권1호
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• pp.19-24
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• 1996

The phase distribution and interface chemistry by the solid-state reaction between SiC and nickel were studied at temperatures between $550 \;and\; 1250^{\circ}C$ for 0.5-100 h. The reaction with the formation of silicides and carbon was first observed above $650^{\circ}C$. At $750^{\circ}C$, as the reaction proceeded, the initially, formed $Ni_3Si_2$ layer was converted to $Ni_2$Si. The thin nickel film reacted completely with SiC after annealing at $950^{\circ}C$ for 2 h. The thermodynamically stable $Ni_2$Si is the only obsrved silicide in the reaction zone up to $1050^{\circ}C$. The formation of $Ni_2$Si layers with carbon precipitates alternated periodically with the carbon free layers. At temperatures between $950^{\circ}C$ and $1050^{\circ}C$, the typical layer sequences in the reaction zone is determined by quantitative microanalysis to be $SiC/Ni_2$$Si+C/Ni_2$$Si/Ni_2$$Si+C/…Ni_2$Si/Ni(Si)/Ni. The mechanism of the periodic band structure formation with the carbon precipitation behaviour was discussed in terms of reaction kinetics and thermodynamic considerations. The reaction kinetics is proposed to estimate the effective reaction constant from the parabolic growth of the reaction zone.

• 소성∙가공
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• 제7권5호
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• pp.481-488
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• 1998

The active metal brazing was applied to bond Alumina and Ni-Cr steel by Ag-Cu-Zr-Sn alloy and the interfacial microstructure and reaction mechanism were investigated. Polycrystalline monoclinic $ZrO_2$ with a very fine grain of 100-150 nm formed at the alumina grain boundary contacted with Zr segregation layer at the interface. The $ZrO_2$ layer containing the inclusions and cracks were developed at the boundary of inclusion/$ZrO_2$ due to the difference in specific volume. The development of $ZrO_2$ at the interface was successfully explained by the preferential penetration of $ZrO_2$ at the interface was successfully explained by the preferential penetration of Zr atoms a higher concentration of oxygen and a high diffusion rate of Al ions into molten brazing alloy.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2005년도 추계학술발표대회 개요집
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• pp.219-221
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• 2005

Sn-9Zn solder balls were bonded to Cu, ENIG (Electroless Nickel/Immersion Gold) and electrolytic Au/Ni pads, and the effect of aging on their joint reliability was investigated. The interfacial products were different from the general reaction layer formed in a Sn-base solder. The intermetallic compounds formed in the solder/Cu joint were $Cu_{5}Zn_{8}$ and $Cu_{6}Sn_{5}$. After aging treatment, voids formed irregularly at the bottom side of the solder because of Sn diffusion into the $Cu_{5}Zn_{8}$ IMC. In the case of the solder/ENIG joint, $AuZn_{3}$ IMCs were formed at the interface. In the case of the Au/Ni/Cu substrate, an $AuZn_{3}$ IMC layer formed at the interface due to the fast reaction between Au and Zn. In addition, the $AuZn_{3}$ IMC layer became detached from the interface after reflow. When the aging time was extended to 100 h, $Ni_{5}Zn_{21}$ IMC was observed on the Ni substrate.

• 대한전기학회논문지
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• 제45권2호
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• pp.242-248
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• 1996

The properties of TiN/TiSi$_{2}$ bilayer formed by a rapid thermal annealing is investigated when thin SiO$_{2}$ film exists at the Ti-Si interface. The competitive reaction for the TiN/TiSi_2 bilayer occurs above 600 .deg. C. The thickness of the TiSi$_{2}$ layer decreases with increasing SiO$_{2}$ film thickness and also decreases with increasing anneal temperture When the competitive reaction for the TiN/TiSi$_{2}$ bilayer is occured by rapid thermal annealing, the composition of TiN layer represents TiN$_{x}$O$_{y}$ due to the SiO$_{2}$ layer at the Ti-Si interface but the structures of the TiN and TiSi$_{2}$ layers were not changed.d.d.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.935-937
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• 2006

Phosphate glass system is expected to be useful as a lead-free material in many devices in plasma display panels (PDP). The present study is mainly focused on the evaluation of interface reaction between ceramic fillers and phosphate glass matrix for barrier ribs in PDP. The results suggest that properties of barrier rib depend on the crystallization behavior and interface reaction between the fillers and glass matrix.

• 한국세라믹학회지
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• 제30권11호
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• pp.949-954
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• 1993

Microstructural development at the ZrO2/NiTi bonding interface and reaction products were examined and identified with SEM and AEM. Ti-oxide, Ti2Ni and Ni2Ti layer were observed whose thickness depends on bonding temperature typically. The development of Ti-oxide layer is related with oxygen ion in ZrO2 and liquid phase Ti2Ni. It is considered that compositional deviation from homogeneity and residual stress caused by thermal expansion mismatch are closely related with the formation of the Ti2Ni phase.

• 한국세라믹학회지
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• 제37권4호
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• pp.381-387
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• 2000

Si3N4/stainless steel 316 joints with Ni buffer layer were fabricated by direct active brazing method (DIB) using Ag-Cu-Ti brazing alloy only and double brazing method (DOB) using Ag-Cu brazing alloy with Si3N4 pretreated with Ag-Cu-Ti brazing alloy. For the joint brazed by DIB method, Ti was segregated at the Si3N4/brazing alloy interface, but was not enough to form a stable joint interface. In addition, large amounts of Ni-Ti inter-metallic compounds were formed in tehbrazing alloy near the joint interface, which could deplete the contents of Ti involved in the interfacial reaction. However, for the joint brazed by DOB method, segregation of Ti at the joint interface were enough to enhance the formation of stable interfacial reaction products such as TiN and Ti-Si-Ni-N-(Cu) multicompounds, which restricted the formation of Ni-Tio inter-metallic compounds in the brazing alloy during brazing with Ni buffer layer. Fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was much improved by using DOB method rather than DIB method. It could be deduced that the differences of fracture strength of the joint with Ni buffer layer depending on brazing process adapted were directly affected by the formation of stable joint interface and the change in microstructure of the brazing alloy near the joint interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of Ni buffer layer in the joint was increased from 0.1 mm to 10 mm. It seems to due to the increased residual stress in the joint as the thickness of Ni buffer layer is increased. The maximum fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was 386 MPa, and the fracture of joint was originated at Si3N4/brazing alloy joint interface and propagated into Si3N4 matrix.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.450-455
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• 2002

Cu-cored Sn-Ag solder balls were fabricated by coating pure Sn and Ag on Cu balls. The melting behavior and the solderability of the BGA joint with the Ni/Au coated Cu pad were investigated and were compared with those of the commercial Sn-Ag and Sn-Ag-Cu balls. DSC analyses clarified the melting of Cu-cored solders to start at a rather low temperature, the eutectic temperature of Sn-Ag-Cu. It was ascribed to the diffusion of Cu and Ag into Sn plating during the heating process. After reflow soldering the microstructures of the solder and of the interfacial layer between the solder and the Cu pad were analyzed with SEM and EPMA. By EDX analysis, formation of a eutectic microstructure composing of $\beta$-Sn, Ag$_3$Sn, ad Cu$_{6}$Sn$_{5}$ phases was confirmed in the solder, and the η'-(Au, Co, Cu, Ni)$_{6}$Sn$_{5}$ reaction layer was found to form at the interface between the solder and the Cu pad. By conducting shear tests, it was found that the BGA joint using Cu-cored solder ball could prevent the degradation of joint strength during aging at 423K because of the slower growth me of η'-(Au, Co, Cu, Ni)$_{6}$Sn$_{5}$ reaction layer formed at the solder, pad interface. Furthermore, Cu-cored multi-component Sn-Ag-Bi balls were fabricated by sequentially coating the binary Sn-Ag and Sn-Bi solders on Cu balls. The reflow property of these solder balls was investigated. Melting of these solder balls was clarified to start at the almost same temperature as that of Sn-2Ag-0.75Cu-3Bi solder. A microstructure composing of (Sn), Ag$_3$Sn, Bi and Cu$_{6}$Sn$_{5}$ phases was found to form in the solder ball, and a reaction layer containing primarily η'-(Au, Co, Cu, Ni)$_{6}$Sn$_{5}$ was found at the interface with Ni/Au coated Cu pad after reflow soldering. By conducting shear test, it was found that the BGA joints using this Cu-core solder balls hardly degraded their joint shear strength during aging at 423K due to the slower growth rate of the η'-(Au, Cu, Ni)$_{6}$Sn$_{5}$ reaction layer at the solder/pad interface.he solder/pad interface.