• Title/Summary/Keyword: Interface instability

Search Result 122, Processing Time 0.027 seconds

The Degradation Analysis of Characteristic Parameters by NBTI stress in p-MOS Transistor for High Speed (고속용 p-MOS 트랜지스터에서 NBTI 스트레스에 의한 특성 인자의 열화 분석)

  • Lee, Yong-Jae;Lee, Jong-Hyung;Han, Dae-Hyun
    • The Journal of Korean Institute of Communications and Information Sciences
    • /
    • v.35 no.1A
    • /
    • pp.80-86
    • /
    • 2010
  • This work has been measured and analyzed the device degradation of NBTI (Negative Bias Temperature Instability) stress induced the increase of gate-induced-drain-leakage(GIDL) current for p-MOS transistors of gate channel length 0.13 [${\mu}m$]. From the relation between the variation of threshold voltage and subthreshold slop by NBTI stress, it has been found that the dominant mechanism for device degradation is the interface state generation. From the GIDL measurement results, we confined that the EHP generation in interface state due to NBTI stress led to the increase of GIDL current. As a results, one should take care of the increased GIDL current after NBTI stress in the ultra-thin gate oxide device. Also, the simultaneous consideration of reliability characteristics and dc device performance is highly necessary in the stress parameters of nanoscale CMOS communication circuit design.

Finite Element Analysis of Hot Strip Rolling Process (열간박판압연공정의 유한요소해석)

  • 강윤호;황상무
    • Transactions of the Korean Society of Mechanical Engineers
    • /
    • v.16 no.5
    • /
    • pp.829-837
    • /
    • 1992
  • This paper presents a new approach for the analysis of hot strip rolling processes. The approach is based on the finite element method and capable of predicting velocity field in the strip, temperature field in the strip, temperature field in the roll, and roll pressure. Basic finite element formulations for heat transfer analysis are described with emphasis on the treatment of numerical instability resulting from a standard Galerkin formulation. Comparison with the theoretical solutions found in the literature is made for the evaluation of the accuracy of the temperature solutions. An iterative scheme is developed for dealing with strong correlations between the metal flow characteristics and the thermal behavior of the roll-strip system. A series of process simulations are carried out to investigate the effect of various process parameters including interface friction, interface heat transfer coefficient, roll speed, reduction in thickness, and spray zone. The results are shown and discussed.

Statistical Analysis of a Subjective QoE Assessment for VVoIP Applications

  • Cano, Maria-Dolores;Cerdan, Fernando;Almagro, Sergio
    • ETRI Journal
    • /
    • v.32 no.6
    • /
    • pp.843-853
    • /
    • 2010
  • A successful deployment of multimedia applications over wireless environments entails improving the quality of service (QoS), not only from a technical point of view, but also considering the quality of experience (QoE) from the final user's perception. Although objective QoE measure models avoid the difficulties of subjective surveys, subjective QoE assessments are essential to understand the way users evaluate the QoS. In this work, we study the effect of a wide range of parameters on the QoE of VVoIP applications in a real wireless scenario. Through a complete statistical analysis of users' ratings, we identify the following facts. Although the use of VVoIP in wireless networks does not yet represent an advantage for users, there are great expectations for all applications under study, and with greater popularity comes higher expectations. It is easier for respondents to identify good behavior than poor behavior. Whereas the respondents' frequency of Internet use does not impact on the scores, respondents' gender does. Finally, the most determining parameters of quality from a user's perspective were instability, video quality, voice distortion, usefulness, and graphical interface.

Development of a New Training System for the Improvement of Equilibrium Sense

  • Kwon, Tae-Kyu;Park, Yong-Gun;Yu, Mi;Kim, Seong-Hyun;Hong, Chul-Un;Kim, Nam-Gyun
    • 제어로봇시스템학회:학술대회논문집
    • /
    • 2004.08a
    • /
    • pp.206-210
    • /
    • 2004
  • This paper proposes a new training system for equilibrium sense using unstable platform. This training system for equilibrium sense consists of an unstable platform, a computer interface circuit and software program. Postural instability changes the weighting of different types of sensory information and the state of the equilibrium maintenance system. In order to improve the equilibrium sense, we developed software program such as a block game, sine curve training (SCT) and pingpong game using Visual C++. Using this system and training programs, we performed an experiment to train the equilibrium sense of a subject. To evaluate the effects of balance training, the time maintained on the target and the moving time to the target are measured. As a result, the moving time to the target and time to maintain cursor on the target improved through repeating equilibrium sense training. It was concluded that this system was reliable in the evaluation of equilibrium sense. We expect that this system might be applied to clinical use as an effective balance training system.

  • PDF

The Design of Underground Utilities Management System based on Mobile Augmented Reality Technology (모바일 증강현실 기술을 이용한 지하 사회 기반 시설 관리 시스템 설계)

  • Baek, Jang-Mi;Hong, In-Sik
    • The Journal of the Institute of Internet, Broadcasting and Communication
    • /
    • v.13 no.1
    • /
    • pp.41-47
    • /
    • 2013
  • A great number of people all over the world are using smart phones. Researchers develop innovative technology of App. It's make rapid progress now that the country's infrastructure is computerized, we expect IT Technological Convergence. In this paper, designs underground utilities management system based on mobile augmented reality technology, and architecture configuration, interface development. Proposal system minimizes overhead of smart devices belonging to engineer's representative using wireless personal area networks. Center Server technology manages transmitted data from engineer's representative, it monitors client data path. And it provies information processing capacity for event generation module. Such event has connotations of instability and uncertainty.

Experimental Study of Spray Characteristics of Liquid jet in Cross-flow (횡단류를 이용한 액체제트의 분무 및 분열 특성 실험)

  • Ko Jung-Bin;Lee Kwan-Hyung;Moon Hee-Jang;Koo Ja-Ye
    • Proceedings of the Korean Society of Propulsion Engineers Conference
    • /
    • v.y2005m4
    • /
    • pp.155-158
    • /
    • 2005
  • The spray characteristics of liquid jet minted in subsonic cross-flow were investigated numerically and experimentally. The behaviors of column, penetration and breakup of plain liquid jet in non-swirling cross-flow of air have been studied. Numerical and physical models are based on a modified KIVAII code. The primary atomization is represented by a wave model based on the KH(Kelvin-Helmholtz) instability that is generated by a high interface relative velocity between the liquid and gas flows. CCD camera has been utilized in oder to capture the spray trajectory. The nozzle diameter was 0.5 mm and its L/D ratios were between 1 and 5. Numerical and experimental results indicate that the breakup point is delayed by increasing gas momentum ratio, the penetration decreases by increasing Weber number and the turbulent or nonturbulent liquid jet is obtained at different L/D ratio.

  • PDF

Experimental study of unsteady thermally stratified flow (비정상 열확산 현상 의 실험적 연구)

  • 이상준;정명균
    • Transactions of the Korean Society of Mechanical Engineers
    • /
    • v.9 no.6
    • /
    • pp.767-776
    • /
    • 1985
  • Unsteady thermally stratified flow caused by two-dimensional surface discharge of warm water into a oblong channel was investigated. Experimental study was focused on the rapidly developing thermal diffusion at small Richardson number. The basic objective were to study the interfacial mixing between a flowing layer of warm water and an underlying body of cold water and to accumulate experimental data to test computational turbulence models. Mean velocity field measurements were carried out by using NMR-CT (Nuclear Magnetic Resonance-Computerized Tomography). It detects quantitative flow image of any desired section in any direction of flow in short time. Results show that at small Richardson number warm layer rapidly penetrates into the cold layer because of strong turbulent mixing and instability between the two layers. It is found that the transfer ofheat across the interface is more vigorous than that of momentum. It is also proved that the NMR-CT technique is a very valuable tool to measure unsteady three dimensional flow field.

A Study on the Formation of Ti-capped NiSi and it′s Thermal Stability (Ti-capped NiSi 형성 및 열적안정성에 관한 연구)

  • 박수진;이근우;김주연;배규식
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2002.07a
    • /
    • pp.288-291
    • /
    • 2002
  • Application of metal silicides such as TiSi$_2$ and CoSi$_2$ as contacts and gate electrodes are being studied. However, TiSi$_2$ due to the linewidth-dependance, and CoSi$_2$ due to the excessive Si consumption during silicidation cannot be applied to the deep-submicron MOSFET device. NiSi shows no such problems and can be formed at the low temperature. But, NiSi shows thermal instability. In this investigation, NiSi was formed with a Ti-capping layer to improve the thermal stability. Ni and Ti films were deposited by the thermal evaporator. The samples were then annealed in the N$_2$ ambient at 300-800$^{\circ}C$ in a RTA (rapid thermal annealing) system. Four point probe, FESEM, and AES were used to study the thermal properties of Ti-capped NiSi layers. The Ti-capped NiSi was stable up to 700$^{\circ}C$ for 100 sec. RTA, while the uncapped NiSi layers showed high sheet resistance after 600$^{\circ}C$. The AES results revealed that the Ni diffusion further into the Si substrate was retarded by the capping layer, resulting in the suppression of agglomeration of NiSi films.

  • PDF

The Effect of Transverse Magnetic Field on Macrosegregation in Vertical Bridgman Crystal Growth of Te doped InSb (Te 도핑된 InSb의 수직 브릿지만 결정성장시 횡적자장이 거시편석에 미치는 영향)

  • Lee, Geun-Hee;Lee, Zin-Hyoung;Yoon, Woo-Young;Baek, Hong-Ku;Kang, Chun-Sik
    • Journal of Korea Foundry Society
    • /
    • v.17 no.1
    • /
    • pp.76-84
    • /
    • 1997
  • An investigation of the effects of transverse magnetic field on melt convection and macrosegregation in vertical Bridgman growth of Te doped InSb was carried out by means of microstructure observation, the measurement of Te distribution by Hall measurement, electrical resistivity measurement and X-ray analysis. Prior to the experiments, interface stability, convective instability and suppression of convection by magnetic field were examined. A thermosolutal convection in the Te doped InSb melt occurred in the examined growth condition without magnetic field. The effective distribution coefficient, $K_{eff}$, was about 0.35 without magnetic field, 0.45 with magnetic field of 2kG, and 0.7 at 4kG. It was found that the stronger the applied magnetic field was, the more the convection was suppressed.

  • PDF

Solution-based Multistacked Active Layer IGZO TFTs

  • Kim, Hyunki;Choi, Byoungdeog
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.351.1-351.1
    • /
    • 2014
  • In this study, we prepared the solution-based In-Ga-Zn oxide thin film transistors (IGZO TFTs) of multistacked active layer and characterized the gate bias instability by measuring the change in threshold voltage caused by stacking. The solutions for IGZO active layer were prepared by In:Zn=1:1 mole ratio and the ratio of Ga was changed from 20% to 30%. The TFTs with multistacked active layer was fabricated by stacking single, double and triple layers from the prepared solutions. As the number of active layer increases, the saturation mobility shows the value of 1.2, 0.8 and 0.6 (). The electrical properties have the tendency such as decreasing. However when gate bias VG=10 V is forced to gate electrode for 3000 s, the threshold voltage shift was decreased from 4.74 V to 1.27 V. Because the interface is formed between the each layers and this affected the current path to reduce the electrical performances. But the uniformity of active layer was improved by stacking active layer with filling the hole formed during pre-baking so the stability of device was improved. These results suggest that the deposition of multistacked active layer improve the stability of the device.

  • PDF