• 한국시뮬레이션학회논문지
• /
• 제10권4호
• /
• pp.21-30
• /
• 2001

In this paper, EMI measurement, the STGU simulation being conducted, filter design, its characteristics, and its implementation to the PCB, and finally test results are discussed. When the low pass filter was implemented within the STGU, the power of EMI decreased more than 20dBm. Finally, when TE and MTIE, two important quality measure in synchronous reference clock, was assessed, ITU-T G813 requirement was satisfied. EMI(Electromagnetic Interface) is a measure of electomagnetic radiation from equipment in the range of 10KHz to 3GHz, and can cause unexpected reactions of electronics/electrical equipment. In this study, for safe and stable communication operation, a STGU (System Timing Generation Unit), which is a 2.5G SDH System and a major EMI source, was employed to simulate electromagnetic interface. Using Open-Site test, the power of fundamental frequency of EMI of interest and its harmonics were measured. Also, a low pass filter at cut-off frequency of 2GHz was specifically designed for this study to minimize the effect of EMI between electronic components.

• 대한인간공학회지
• /
• 제28권1호
• /
• pp.53-60
• /
• 2009

The present study was intended to suggest a process of physical user interface (PUI) design guideline development, which was validated with mobile phones. The process consisted of five stages including component and dimension analysis, function and environment analysis, evaluation criterion generation, literature review, and design guideline development. The process was applied to develop 19 mobile phone PUI design guidelines by identifying 28 components, 9 dimensions, 51 functions, 7 environmental conditions, and 15 criteria. The systematic approach of the process would be useful for manufacturers to develop design guidelines in an efficient manner.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.324-327
• /
• 2000

In this paper, the effects of negative and positive bias stress on p-channel poly-Si TFT's fabricated by excimer laser annealing have been investigated After positive and negative bias stress, transcon-ductance(g$_{m}$) is increased because of a reduction of the effective channel length due to the injected electron in the gate oxide. In the positive bias stress, the injection of hole is appeared after stress time of 3600sec and g$_{m}$ is decreased. On the other hand, the gate voltage at the maximum g$_{m}$, S-swing and threshold voltage(V$_{th}$) are decreased because of the interface state generation due to the injection of electrons into the gate oxide.e.ide.e.

• 정보보호학회지
• /
• 제17권2호
• /
• pp.9-23
• /
• 2007

The air interface supports a security layer which provides the key exchange protocol, authentication protocol, and encryption protocol. The authentication is performed on the encryption protocol packet. The authentication protocol header or trailer may contain the digital signature that is used to authenticate a portion of the authentication protocol packet that is authenticated. The encryption protocol may add a trailer to hide the actual length of the plaintext of padding to be used by the encryption algorithm. The encryption protocol header may contain variables such as the initialization vector (IV) to be used by the encryption protocol. It is our aim to firstly compute the session key created from the D H key exchange algorithm, and thereof the authenticating key and the encryption key being generated from the session key.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1997년도 추계학술대회 논문집
• /
• pp.266-269
• /
• 1997

Hot carrier effects as a function of bias stress time and bias stress conditions were syste-matica1ly investigated in p-channel po1y-Si TFT's fabricated on the quartz substrate. The device degradation was observed for the negative bias stress. After positive bias stressing, Improvement of electrical characteristic except for subthreshold slope was observed. It was found that these results were related to the hot carrier injection into the gate oxide and interface states at the poly-Si/SiO$_2$interface rather than defects states generation under bias stress.

• 정보통신설비학회논문지
• /
• 제9권2호
• /
• pp.42-47
• /
• 2010

차세대 무선 네트워크 환경에서는 다양한 이기종 무선 엑세스 기술들이 존재하여 서비스 되고 다양한 서비스를 하나의 단말로 지원하는 멀티 인터페이스 시스템의 출현이 예상되고 있다. 이러한 멀티 인터페이스 특성상 많은 연구들이 주로 전력제어 측면에서만 이루어지고 있다. 그러나 통합 우선네트워크 안에서 다양한 서비스가 원활하게 운용되기 위해서는 QoS를 고려한 이기종망간 네트워크접속에 대해서 연구가 필요하다. 본 논문에서는 전력제어 측면 외에 QoS를 고려한 사전인증 및 네트워크 접속 메커니즘을 제안한다.

• 한국전기전자재료학회논문지
• /
• 제14권11호
• /
• pp.869-873
• /
• 2001

The effects of alternate bias stress on p-channel poly-Si TFT\`s has been systematically investigated. We alternately applied positive and negative bias stress on p-channel poly-Si TFT\`s, device Performance(V$\_$th/, g$\_$m/, leakage current, S-slope) are alternately appeared to be increasing and decreasing. It has been shown that device performance degrade under the negative bias stress while improve under the positive bias stress. This effects have been related to the hot carrier injection into the gate oxide rather than the generation of defect states within the poly-Si/SiO$_2$ interface under alternate bias stress.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2005년도 제36회 하계학술대회 논문집 B
• /
• pp.1438-1440
• /
• 2005

A power control and distribution unit(PCDU) plays roles of protection of battery against overcharge by active control of solar array generated power, distribution of unregulated electrical power via controlled outlets to bus and instrument units, distribution of regulated electrical power to selected bus and instrument units, and provision of status monitoring and telecommand interface allowing the system and ground operate the power system, evaluate its performance and initiate appropriate countermeasures in case of abnormal conditions. In this work, we perform the preliminary design of a PCDU scheme for the small LEO Satellite applications. The main constitutes of the PCDU are the battery interface module, the auxiliary supply modules, solar array regulators with maximum power point tracking(MPPT) technology, heater power distribution modules, internal converter modules for regulated bus voltage generation. and instrument power distribution modules.

• Ocean Systems Engineering
• /
• 제12권4호
• /
• pp.385-402
• /
• 2022

This paper deals with the study of hydrodynamic pressure in reservoir adjacent to the concrete gravity dam subjected to dynamic excitation. Widely famous finite element method is used to discretize the reservoir domain for modelling purpose. Pressure is considered as nodal variable following Eulerian approach. A suitable nonreflecting boundary condition is applied at truncated face of reservoir to make the infinite reservoir to finite one for saving the computational cost. Thorough studies have been done on generation of hydrodynamic pressure in reservoir with variation of different geometrical properties. Velocity profile and hydrodynamic pressure are observed due to harmonic excitation for variation of inclination angle of dam reservoir interface. Effect of bottom slope angle and inclined length of reservoir bottom on hydrodynamic pressure coefficient of reservoir are also observed. There is significant increase in hydrodynamic pressure and distinct changes in velocity profile of reservoir are noticeable for change in inclination angle of dam reservoir interface. Change of bottom slope and inclined length of reservoir bottom are also governing factor for variation of hydrodynamic pressure in reservoir subjected to dynamic excitation.

• 접착 및 계면
• /
• 제24권1호
• /
• pp.1-8
• /
• 2023

공액고분자는 유기전자소자부터 바이오메디칼 응용분야까지 다양하게 적용가능한 차세대 반도체소재이다. 하지만 낮은 수용성으로 주로 유기용매에 녹여 사용하나 최근 유기 용매의 독성과 환경 문제 이슈로 공액고분자의 수분산 나노입자화가 주목받고 있다. 본 총설에서는 나노입자가 형성되는 두 가지 원리와 이를 이용한 대표적인 공액고분자 나노입자 합성방법들 및 관련 연구들을 소개하고자 한다.