• Title/Summary/Keyword: Interface generation

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Design of Low Pass Filter to reduce EMI from 2.SG SDH system (2.5G SDH 전자파 감소용 저역통과필터 설계)

  • 이성원;김영범
    • Journal of the Korea Society for Simulation
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    • v.10 no.4
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    • pp.21-30
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    • 2001
  • In this paper, EMI measurement, the STGU simulation being conducted, filter design, its characteristics, and its implementation to the PCB, and finally test results are discussed. When the low pass filter was implemented within the STGU, the power of EMI decreased more than 20dBm. Finally, when TE and MTIE, two important quality measure in synchronous reference clock, was assessed, ITU-T G813 requirement was satisfied. EMI(Electromagnetic Interface) is a measure of electomagnetic radiation from equipment in the range of 10KHz to 3GHz, and can cause unexpected reactions of electronics/electrical equipment. In this study, for safe and stable communication operation, a STGU (System Timing Generation Unit), which is a 2.5G SDH System and a major EMI source, was employed to simulate electromagnetic interface. Using Open-Site test, the power of fundamental frequency of EMI of interest and its harmonics were measured. Also, a low pass filter at cut-off frequency of 2GHz was specifically designed for this study to minimize the effect of EMI between electronic components.

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Development Process of Mobile Phone PUI Design Guidelines (휴대전화 PUI 디자인 가이드라인 도출 프로세스)

  • Lee, Kyung-Sun;You, Hee-Cheon;Kwon, O-Chae;Jung, Myung-Chul
    • Journal of the Ergonomics Society of Korea
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    • v.28 no.1
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    • pp.53-60
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    • 2009
  • The present study was intended to suggest a process of physical user interface (PUI) design guideline development, which was validated with mobile phones. The process consisted of five stages including component and dimension analysis, function and environment analysis, evaluation criterion generation, literature review, and design guideline development. The process was applied to develop 19 mobile phone PUI design guidelines by identifying 28 components, 9 dimensions, 51 functions, 7 environmental conditions, and 15 criteria. The systematic approach of the process would be useful for manufacturers to develop design guidelines in an efficient manner.

Effects of electrical stress on low temperature p-channel poly-Si TFT′s (저온에서 제작된 p-채널 poly-Si TFT의 전기적 스트레스 효과)

  • 백희원;임동규;임석범;정주용;이진민;김영호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.324-327
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    • 2000
  • In this paper, the effects of negative and positive bias stress on p-channel poly-Si TFT's fabricated by excimer laser annealing have been investigated After positive and negative bias stress, transcon-ductance(g$_{m}$) is increased because of a reduction of the effective channel length due to the injected electron in the gate oxide. In the positive bias stress, the injection of hole is appeared after stress time of 3600sec and g$_{m}$ is decreased. On the other hand, the gate voltage at the maximum g$_{m}$, S-swing and threshold voltage(V$_{th}$) are decreased because of the interface state generation due to the injection of electrons into the gate oxide.e.ide.e.

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Invited Speech at ICSS 2007 Generation of Session, Authentication, and Encryption Keys for CDMA2000 1x EV-DO Air Interface Standard

  • Rhee, Man-Young
    • Review of KIISC
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    • v.17 no.2
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    • pp.9-23
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    • 2007
  • The air interface supports a security layer which provides the key exchange protocol, authentication protocol, and encryption protocol. The authentication is performed on the encryption protocol packet. The authentication protocol header or trailer may contain the digital signature that is used to authenticate a portion of the authentication protocol packet that is authenticated. The encryption protocol may add a trailer to hide the actual length of the plaintext of padding to be used by the encryption algorithm. The encryption protocol header may contain variables such as the initialization vector (IV) to be used by the encryption protocol. It is our aim to firstly compute the session key created from the D H key exchange algorithm, and thereof the authenticating key and the encryption key being generated from the session key.

A Study on the Hot-Carrier Effects of p-channel poly-Si TFT (p-채널 po1y-Si TFT 소자의 Hot-Carrier효과에 관한 연구)

  • 진교원;박태성;이제혁;백희원;변문기;김영호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.266-269
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    • 1997
  • Hot carrier effects as a function of bias stress time and bias stress conditions were syste-matica1ly investigated in p-channel po1y-Si TFT's fabricated on the quartz substrate. The device degradation was observed for the negative bias stress. After positive bias stressing, Improvement of electrical characteristic except for subthreshold slope was observed. It was found that these results were related to the hot carrier injection into the gate oxide and interface states at the poly-Si/SiO$_2$interface rather than defects states generation under bias stress.

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A Study of Authentication and Network Access Method on MIH based Network (통합 무선네트워크에서 MIH기반 이기종망간 인증 및 네트워크 접속기법에 관한 연구)

  • Son, Sung-Chan;Oh, Jung-Kuin
    • Journal of The Institute of Information and Telecommunication Facilities Engineering
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    • v.9 no.2
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    • pp.42-47
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    • 2010
  • In next generation wireless network environment, various different wireless access technologies exist and multi-interface systems which can provide various services in one terminal are required. So far there have been many studies only on the power control part of multi-interface systems. Therefore, the study of network connection considering Qos between different networks is necessary in order for various services to be operated in integrate wireless networks. This paper proposes a pre-authentication and network connection mechanism rather than power control part.

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Effect of Alternate Bias Stress on p-channel poly-Si TFT`s (P-채널 다결정 실리콘 박막 트랜지스터의 Alternate Bias 스트레스 효과)

  • 김영호;조봉희;강동헌;길상근;임석범;임동준
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.11
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    • pp.869-873
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    • 2001
  • The effects of alternate bias stress on p-channel poly-Si TFT\`s has been systematically investigated. We alternately applied positive and negative bias stress on p-channel poly-Si TFT\`s, device Performance(V$\_$th/, g$\_$m/, leakage current, S-slope) are alternately appeared to be increasing and decreasing. It has been shown that device performance degrade under the negative bias stress while improve under the positive bias stress. This effects have been related to the hot carrier injection into the gate oxide rather than the generation of defect states within the poly-Si/SiO$_2$ interface under alternate bias stress.

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Preliminary Design of a Power Control and Distribution Unit for a Small LEO Satellite Application (소형 저궤도 위성적용을 위한 전력조절분배기 예비설계)

  • Park, Sung-Woo;Park, Hee-Sung;Jang, Jin-Baek;Jang, Sung-Soo
    • Proceedings of the KIEE Conference
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    • 2005.07b
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    • pp.1438-1440
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    • 2005
  • A power control and distribution unit(PCDU) plays roles of protection of battery against overcharge by active control of solar array generated power, distribution of unregulated electrical power via controlled outlets to bus and instrument units, distribution of regulated electrical power to selected bus and instrument units, and provision of status monitoring and telecommand interface allowing the system and ground operate the power system, evaluate its performance and initiate appropriate countermeasures in case of abnormal conditions. In this work, we perform the preliminary design of a PCDU scheme for the small LEO Satellite applications. The main constitutes of the PCDU are the battery interface module, the auxiliary supply modules, solar array regulators with maximum power point tracking(MPPT) technology, heater power distribution modules, internal converter modules for regulated bus voltage generation. and instrument power distribution modules.

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A finite element based approach to observe hydrodynamic pressure in reservoir adjacent to concrete gravity dam

  • Santosh Kumar, Das;Kalyan Kumar, Mandal;Arup Guha, Niyogi
    • Ocean Systems Engineering
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    • v.12 no.4
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    • pp.385-402
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    • 2022
  • This paper deals with the study of hydrodynamic pressure in reservoir adjacent to the concrete gravity dam subjected to dynamic excitation. Widely famous finite element method is used to discretize the reservoir domain for modelling purpose. Pressure is considered as nodal variable following Eulerian approach. A suitable nonreflecting boundary condition is applied at truncated face of reservoir to make the infinite reservoir to finite one for saving the computational cost. Thorough studies have been done on generation of hydrodynamic pressure in reservoir with variation of different geometrical properties. Velocity profile and hydrodynamic pressure are observed due to harmonic excitation for variation of inclination angle of dam reservoir interface. Effect of bottom slope angle and inclined length of reservoir bottom on hydrodynamic pressure coefficient of reservoir are also observed. There is significant increase in hydrodynamic pressure and distinct changes in velocity profile of reservoir are noticeable for change in inclination angle of dam reservoir interface. Change of bottom slope and inclined length of reservoir bottom are also governing factor for variation of hydrodynamic pressure in reservoir subjected to dynamic excitation.

Methods to Formulate Waterborne Conjugated Polymer Nanoparticles (수분산 공액고분자 나노입자의 합성 방법론)

  • Seungju Kang;Boseok Kang
    • Journal of Adhesion and Interface
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    • v.24 no.1
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    • pp.1-8
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    • 2023
  • A conjugated polymer is the next-generation emerging semiconductor material that can be applied in various fields, from organic electronics to biomedical applications. However, its low solubility in an aqueous medium has made the use of toxic organic solvents inevitable, thereby leading to formulation of conjugated polymers in the form of waterborne nanoparticles. This review paper discusses two principles of nanoparticle formation and representative methods for synthesizing conjugated polymer nanoparticles.