• Korean Journal of Materials Research
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• v.8 no.10
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• pp.890-897
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• 1998

The direct wafer bonding between n-InP(001) wafer and the ${Si}_3N_4$(200 nm) film grown on the InP wafer by PECVD method was investigated. The surface states of InP wafer and ${Si}_3N_4$/InP which strongly depend upon the direct wafer bonding strength between them when they are brought into contact, were characterized by the contact angle measurement technique and atomic force microscopy. When InP wafer was etched by $50{\%}$ HF, contact angle was $5^{\circ}$ and RMS roughness was $1.54{\AA}$. When ${Si}_3N_4$ was etched by ammonia solution, RMS roughness was $3.11{\AA}$. The considerable amount of initial bonding strength between InP wafer and ${Si}_3N_4$/InP was observed when the two wafer was contacted after the etching process by $50{\%}$ HF and ammonia solution respectively. The bonded specimen was heat treated in $H^2$ or $N^2$, ambient at the temperature of $580^{\circ}C$-$680^{\circ}C$ for lhr. The bonding state was confirmed by SAT(Scannig Acoustic Tomography). The bonding strength was measured by shear force measurement of ${Si}_3N_4$/InP to InP wafer increased up to the same level of PECVD interface. The direct wafer bonding interface and ${Si}_3N_4$/InP PECVD interface were chracterized by TEM and AES.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.6
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• pp.1187-1193
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• 2002

Anodic bonding process has been quantitatively evaluated based on the Taguchi analysis of the interfacial fracture toughness, measured at the interface of anodically bonded silicon-glass bimorphs. A new test specimen with a pre-inserted blade has been devised for interfacial fracture toughness measurement. A set of 81 different anodic bonding conditions has been generated based on the three different conditions for four different process parameters of bonding load, bonding temperature, anodic voltage and voltage supply time. Taguchi method has been used to reduce the number of experiments required for the bonding strength evaluation, thus obtaining nine independent cases out of the 81 possible combinations. The interfacial fracture toughness has been measured for the nine cases in the range of 0.03∼6.12 J/㎡. Among the four process parameters, the bonding temperature causes the most dominant influence to the bonding strength with the influence factor of 67.7%. The influence factors of other process parameters, such as anodic voltage and voltage supply time, bonding load, are evaluated as 18%, 12% and 2.3%, respectively. The maximum bonding strength of 7.23 J/㎡ has been achieved at the bonding temperature of 460$\^{C}$ with the bonding load of 45gf/㎠, the applied voltage of 600v and the voltage supply time of 25minites.

• Journal of Powder Materials
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• v.13 no.1 s.54
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• pp.62-67
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• 2006

Friction welding of $Al_2O_3$ particulate reinforced aluminum composites was performed and the following conclusions were drawn from the study of interfacial bonding characteristics and the relationship between experimental parameters of friction welding and interfacial bond strength. Highest bonded joint efficiency (HBJE) approaching $100\%$ was obtained from the post-brake timing, indicating that the bonding strength of the joint is close to that of the base material. For the pre-brake timing, HBJE was $65\%$. Most region of the bonded interface obtained from post-brake timing exhibited similar microstructure with the matrix or with very thin, fine-grained $Al_2O_3$ layer. This was attributed to the fact that the fine-grained $Al_2O_3$ layer forming at the bonding interface was drawn out circumferentially in this process. Joint efficiency of post-brake timing was always higher than that of pre-brake timing regardless of rotation speed employed. In order to guarantee the performance of friction welded joint similar to the efficiency of matrix, it is necessary to push out the fine-grained $Al_2O_3$ layer forming at the bonding interface circumferentially. As a result, microstructure of the bonded joint similar to that of the matrix with very thin, fine-grained $Al_2O_3$ layer can be obtained.

• Journal of Welding and Joining
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• v.15 no.5
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• pp.56-63
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• 1997

In The study, the bonding of WC-9%Co to SUJ2 steel using Ag-Cu-Zn-Cd insert metal has performed to investigate the bonding properties by heat-treatment. Bonding was brazed for 5-30min at 95$0^{\circ}C$, performed solution treatment for 5 min at 85$0^{\circ}C$ and sustained subsequently oil quenching. To investigate the effect of heat-treatment, tempering was executed at $600^{\circ}C$ for 30 min after oil quenching. Mechnical properties and chemical compositions on the brazed bonding interface were investigated by means of microstructural observation, 4-point bending test and EDS and XRD measurements. The results obtained were as follows. 1) The bonding strength of WC-9%Co/SUJ2 joints by Ag-Cu-Zn-Cd insert metal obtained about 78, 117 and 72MPa after brazing for 5, 20 and 30 min at 95$0^{\circ}C$. And the highest bonding strength obtained about 131MPa after brazing for10 min at 95$0^{\circ}C$ 2) Higher bonding strength of 288MPa was obtained in the joint that brazed for 10 min at 95$0^{\circ}C$, and carried out tempering for 30 min at $600^{\circ}C$ subsequently. 3) Fracture of joint brazed by Ag-Cu-Zn-Cd insert metal for 5, 10, 20 and 30 min created WC-9%Co/SUJ2 interface. The joint that brazed for 10 min at 95$0^{\circ}C$ and then tempered for 30 min at $600^{\circ}C$ was fractured at the site of WC-9%Co.

• Journal of the Korea institute for structural maintenance and inspection
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• v.20 no.1
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• pp.25-32
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• 2016

The purpose of this study is to evaluate the performance on the compressive bonding shear strength of ultra-high strength steel fiber reinforced cementitous composites(UHSCC). As a result of compressive bonding shear strength through Direct shear test, It was found that the specimen($150{\times}150{\times}150mm$) of NC(Normal concrete) + NC showed similar compressive bonding shear strength at whole experimental level. On the other hand, the specimen of UHSCC + UHSCC showed decrease of compressive bonding shear strength from after 30 minutes of the retarded placement than 0 minute. As a result of analyzing failure mode of bonding interface, It was found that the specimen of NC + NC showed mixed failure at whole experimental level. In case of the specimen of UHSCC + UHSCC, it showed interface failure from the specimen that are 30 minutes, 60 minutes and 90 minutes of delay of concrete placing. As a result of analyzing XRD test in terms of the placement interface on the specimen of NC and UHSCC, relatively much amount of $SiO_2$ was detected from the specimen of UHSCC than that of NC. It is judged that the most of main components of coating film shown in the specimen of UHSCC is $SiO_2$. In conclusion, it is judged that UHSCC which is made from after 30 minutes of delay of concrete placing is unable to be used as structural member because of deterioration of bonding performance. From later study, it is judged that the improvement of bonding performance from the part of cold joint occurrence is necessary through the interface preparation method.

• Journal of Welding and Joining
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• v.13 no.3
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• pp.106-115
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• 1995

To know the bonding phenomena of Ti/Cu brazed joint, a characteristic of microstructures in bonding interlayer of vacuum brazed pure Ti to Cu has been studied in the temperature range from 1088 to 1133K for various bonding times using Ag-28wt%Cu filler metal. Also intermediate phases formed in bonded interlayer and behavior of layer growth have been investigated. The obtained results in this study are as follows: 1) Liquid insert metal width at the each brazing temperature was proportional to the square root of brazing time, and it was considered that the liquid insert metal width was controlled by the diffusion rate process of primary .alpha.-Cu formed at the Ti side. 2) Intermediate phases formed near the Ti interface were .betha.-Ti and intermetallic compounds TiCu, Ti$_{2}$Cu, Ti$_{3}$Cu, and TiCu. 3) .betha.-Ti formed in Ti base metal durig brazing transformed to lamellar structure, .alpha.-Ti + Ti$_{2}$Cu. The structure came from the eutectoil decomposition reaction in cooling. And the width of .betha.-Ti layer was proportional to the square root of brazing time, and it was considered that the growth of .betha.-Ti layer was controlled by interdiffusion rate process in .betha.-Ti. 4) The layer growth of TiCu, Ti$_{3}$Cu$_{4}$ and TiCu, phases formed near the Ti interface was linerface was linearly proportional to the brazing time, and it was considered that the layer growth of these phases was controlled by the chemical reaction rate at the interface.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.181-184
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• 2017

Multilayer ceramics in which piezoelectric layers of $0.90Pb(Zr_{0.48}Ti_{0.52})O_3-0.05Pb(Mn_{1/3}Sb_{2/3})O_3-0.05Pb(Zn_{1/3}Nb_{2/3})O_3$ (0.90PZT-0.05PMS-0.05PZN) stack alternately with silver electrode layers were prepared by an advanced low-temperature co-fired ceramic (LTCC) method. The electrical properties and bonding strength of the multilayers were associated with the interface morphologies between the piezoelectric and silver-electrode layers. Usually, the inner silver electrodes are fabricated by sintering silver paste in multi-layer stacks. To improve the interface bonding strength, piezoelectric powders of 0.90PZT-0.05PMS-0.05PZN with an average particle size of $23{\mu}m$ were added to silver paste to form a gradient interface. SEM observation indicated clear interfaces in multilayer ceramics without powder addition. With the increase of piezoelectric powder addition in the silver paste, gradient interfaces were successfully obtained. The multilayer ceramics with gradient interfaces present greater bonding strength as well as excellent piezoelectric properties for 30~40 wt% of added powder. On the other hand, over addition greatly increased the resistance of the inner silver electrodes, leading to a piezoelectric behavior like that of bulk ceramics in multilayers.

• Journal of the Korean Society of Safety
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• v.32 no.1
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• pp.9-14
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• 2017

Diffusion bonding is a technique that has the ability to join materials with minimum change in joint micro-structure and deformation of the component. The quality of the joints produced was examined by metallurgical characterization and the joint micro-structure developed across the diffusion bonding was related to changes in mechanical properties as a function of the bonding time. An increase in bonding time also resulted in an increase in the micro-hardness of the joint interface from 55 VHN to 180 VHN, The increase in hardness was attributed to the formation of intermetallic compounds which increased in concentration as bonding time increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.338-341
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• 1996

Anodic bonding is a key technology for micromechanical components. The main advantages of this method can be formed in a batch process, over large areas, and is permanent and irreversible. In this paper, the bonding was performed at temperatures ranging from 300 to 450 $^{\circ}C$, voltages 400 to 1000 V, and times 10 to 30 minutes. The sizes of the Si and the Pyrex #7740 glass were 6 mm $\times$6 mm, respectively. Bonding processes and voids were observed by the optical microscope, and the composition of the anodic bonding interface was analyzed by the SIMS. Optimum condition of the anodic bonding was at temperature above 40$0^{\circ}C$ without regard to voltage.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.43-45
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• 2005

A precise bonding technique, transmission laser bonding using energy transfer, for polymer micro devices is presented. The irradiated IR laser beam passes through the transparent part and absorbed on the opaque part. The absorbed energy is converted to heat and bonding takes place. In order to optimize the bonding quality, the temperature profile on the interface must be obtained. Using optical measurements of the both plates, the absorbed energy can be calculated and heat transfer model was applied for obtaining the transient temperature profile. The transmission laser bonding has a potential in the local precise bonding in MEMS or Lab-on-a-chip.