• Journal of the Korean Society for Nondestructive Testing
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• v.15 no.4
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• pp.540-548
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• 1996

In general residual stress is measured by X-ray diffraction method but in case of bonding residual thermal stress it is inadequate technique to examine the stress singularity. Therefore Two-dimensional elastic boundary element analyses were carried out to investigate the residual thermal stress and stress singularity of bonding interface in Al/Epoxy. This boundary element results were compared with the strain gauge measurements. The effects of different interface models, sub-element and adherend thickness are presented and discussed. On the basis of the obtained results, interface delamination causing by normal stress is expected and stress singularity is observed more intensively increasing with adherend thickness. It is concluded that the bonding strength of Al/Epoxy interface can be estimated correctly by taking into account the stress singularity at the edge of the interface.

• Journal of Adhesion and Interface
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• v.4 no.2
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• pp.21-29
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• 2003

Hot AC anodising has been evaluated us pre-treatment for aluminium prior to structural adhesive bonding. Phosphoric and sulphuric acid hot AC anodising showed very promising adhesion promoter capabilities with durability comparable with the best standard DC anodising procedures. AC anodising does not required etching prior to anodising and offers u pre-treatment time down to 20 seconds. The interface/interphase between the aluminium substrate and the adhesive was investigated in order to get a better understanding of the involved adhesion mechanisms and to explain the long-tenn properties. The alkaline medium formed at the oxide layer/adhesive interface has been shown to induce a partial dissolution of the oxide layer leading to the formation of metallic ions which diffuse in the adhesive (EPMA measurements). The effect of diffusion of the Al ions on adhesion and joint durability is still uncertain but studies showed that pre-bond moisture affected the joints durability and to some extent the diffusion length. specially for DC anodised samples. So far no direct correlation could be established between the diffusion length d and the joints durability but new trials with better control over the elapsed time between bonding and adhesive curing are expected to help getting a better understanding of the involved mechanisms.

• Journal of the Korean Society of Safety
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• v.38 no.2
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• pp.1-7
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• 2023

Fiber-metal laminates (FMLs) and polymer matrix composites (PMCs) are formed in various ways. In particular, FMLs in which aluminum is laminated as a reinforced layer are widely used. Also, glass fiber-reinforced plastics (GFRPs) are generally applied as fiber laminates. The bonding interface layer between the aluminum and fiber laminate exhibits low strength when subjected to hot press fabrication in the event of delamination fracture at the interface. This study presents a simple method for strengthening the interface bonding between the aluminum metal and GFRP layer of FML composites. The surfaces of the aluminum interface layer are engraved with three kinds of patterns by using the laser machine before the hot press works. Furthermore, the effect of the laser patterns on the interfacial toughness is investigated. The interfacial toughness was evaluated by the energy release rate (G) using an asymmetric double cantilever bending specimen (ADCB). From the experimental results, it was shown that the strip type pattern (STP) has the most proper pattern shape in GFRP/Al FML composites. Therefore, this will be considered a useful method for the safety assessment of FML composite structures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.370-373
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• 1999

Si direct bonding (SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on- pre treatment conditions in Si wafer direct bonding, The paper resents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, applied pressure and annealing temperature(200~ 100$0^{\circ}C$) after pre-bonding. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera, respectively, Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding(Min 2.4kgf/$\textrm{cm}^2$~ Max : 14.kgf/$\textrm{cm}^2$)

• Korean Journal of Metals and Materials
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• v.47 no.9
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• pp.573-579
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• 2009

Titanium/aluminum/stainless steel(Ti/Al/STS) clad materials have received much attention due to their high specific strength and corrosion-resisting properties. However, it is difficult to fabricate these materials, because titanium oxide is easily formed on the titanium surface during heat treatment. The aim of the present study is to derive optimized cladding conditions and thereupon obtain the stable quality of Ti/Al/STS clad materials. Ti sheets were prepared with and without pre-heat treatment and Ti/Al/STS clad materials were then fabricated by cold rolling and a post-heat treatment process. Microstructure of the Ti/Al and STS/Al interfaces was observed using a Scanning Electron Microscope(SEM) and an Energy Dispersed X-ray Analyser(EDX) in order to investigate the effects of Ti pre-heat treatment on the bond properties of Ti/Al/STS clad materials. Diffusion bonding was observed at both the Ti/Al and STS/Al interfaces. The bonding force of the clad material with non-heat treated Ti was higher than that with pre-heat treated Ti before the cladding process. The bonding force decreased rapidly beyond $400^{\circ}C$, because the formed Ti oxide inhibited the joining process between Ti and Al. Bonding forces of STS/Al were lower than those of Ti/Al, because brittle $Fe_3Al$, $Al_3Fe$ intermetallic compounds were formed at the interface of STS/Al during the cladding process. In addition, delamination of the clad material with pre-heat treated Ti was observed at the Ti/Al interface after a cupping test.

• Korean Journal of Materials Research
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• v.34 no.3
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• pp.170-174
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• 2024

In this study, we report the microstructural evolution and shear strength of an Sn-Sb alloy, used for die attach process as a solder layer of backside metal (BSM). The Sb content in the binary system was less than 1 at%. A chip with the Sn-Sb BSM was attached to a Ag plated Cu lead frame. The microstructure evolution was investigated after die bonding at 330 ℃, die bonding and isothermal heat treatment at 330 ℃ for 5 min and wire bonding at 260 ℃, respectively. At the interface between the chip and lead frame, Ni₃Sn₄ and Ag₃Sn intermetallic compounds (IMCs) layers and pure Sn regions were confirmed after die bonding. When the isothermal heat treatment is conducted, pure Sn regions disappear at the interface because the Sn is consumed to form Ni₃Sn₄ and Ag₃Sn IMCs. After the wire bonding process, the interface is composed of Ni₃Sn₄, Ag₃Sn and (Ag,Cu)₃Sn IMCs. The Sn-Sb BSM had a high maximum shear strength of 78.2 MPa, which is higher than the required specification of 6.2 MPa. In addition, it showed good wetting flow.

• Journal of the korean academy of Pediatric Dentistry
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• v.23 no.4
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• pp.867-886
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• 1996

The purpose of this study was to evaluate the shearbond strength and resin-dentin interface of three different dentinal bonding systems in primary and permanent teeth. Thirty extracted human primary molars and premolars, which were non-carious and free of obvious defect, were selected for this study. All specimens were divided into six groups with two groups allocated for each of the three dentinal bonding system(All-bond 2, Scotchbond Multi-Purpose, Gluma bonding system). After completion of bonding composite to dentin using each tested dentin bonding system, bond strength measurement and histological observation were performed. The results are as follows: 1. All-bond 2 and Scotchbond Multi-Purpose, A good quality hybrid layer was identified, the morphology of which could be equated with the zone of H-E and Brown-Brenn staining. In Gluma bonding system, hybrid layer was very thin, and separated from the solid polymer. 2. All-bond 2 had the highest mean shearbond strength, followed by Scotchbond Multi-Purpose and Gluma bonding system in both primary and permanent teeth. There was no statistically significant difference between All-bond 2 and Scotchbond Multi-Purpose. Statistically significant difference could be found between Gluma bonding system and the other two groups(p<0.05). 3. The fracture patterns observed were mainly the mixture of adhesive failure and dentin dettachment pattern in All-bond 2 and Scotchbond Multi-Purpose while adhesive failure prevailed in Gluma bonding system.

• Journal of Welding and Joining
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• v.19 no.4
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• pp.423-428
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• 2001

The bonding phenomena of Ni base single crystal superalloy. CMSX-4 during transient liquid phase(TLP) bonding was investigated using MBF-80 insert metal. Bonding of CMSX-4 was carried out at 1,373∼1,548K for 0∼19.6ks in vacuum. The (001) orientation of each test specimen was aligned perpendicular to the bonding interface. The dissolution width of base metal was increased when the bonding temperature and holding time were increased. The eutectic width diminished linearly with the square root of holding time during isothermal solidification process. Borides were formed in the bonded layer during TLP bonding operation. The solid phase grew epitaxially into the liquid phase from substrates and single crystallization could be readily achieved during the isothermal solidification.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.479-485
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• 2002

We have investigated the effects of various wafers cleaning on glass/Si bonding using 4 inch Pyrex glass wafers and 4 inch silicon wafers. The various wafer cleaning methods were examined; SPM(sulfuric-peroxide mixture, $H_2SO_4:H_2O_2$ = 4 : 1, $120^{\circ}C$), RCA(company name, $NH_4OH:H_2O_2:H_2O$ = 1 : 1 : 5, $80^{\circ}C$), and combinations of those. The best room temperature bonding result was achieved when wafers were cleaned by SPM followed by RCA cleaning. The minimum increase in surface roughness measured by AFM(atomic force microscope) confirmed such results. During successive heat treatments, the bonding strength was improved with increased annealing temperatures up to $400^{\circ}C$, but debonding was observed at $450^{\circ}C$. The difference in thermal expansion coefficients between glass and Si wafer led debonding. When annealed at fixed temperatures(300 and $400^{\circ}C$), bonding strength was enhanced until 28 hours, but then decreased for further anneal. To find the cause of decrease in bonding strength in excessively long annealing time, the ion distribution at Si surface was investigated using SIMS(secondary ion mass spectrometry). tons such as sodium, which had been existed only in glass before annealing, were found at Si surface for long annealed samples. Decrease in bonding strength can be caused by the diffused sodium ions to pass the glass/si interface. Therefore, maximum bonding strength can be achieved when the cleaning procedure and the ion concentrations at interface are optimized in glass/Si wafer direct bonding.

• Korean Journal of Materials Research
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• v.18 no.4
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• pp.204-210
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• 2008

$1.5\;{\mu}m$-thick copper films deposited on silicon wafers were successfully bonded at $415^{\circ}C$/25 kN for 40 minutes in a thermo-compression bonding method that did not involve a pre-cleaning or pre-annealing process. The original copper bonding interface disappeared and showed a homogeneous microstructure with few voids at the original bonding interface. Quantitative interfacial adhesion energies were greater than $10.4\;J/m^2$ as measured via a four-point bending test. Post-bonding annealing at a temperature that was less than $300^{\circ}C$ had only a slight effect on the bonding energy, whereas an oxygen environment significantly deteriorated the bonding energy over $400^{\circ}C$. This was most likely due to the fast growth of brittle interfacial oxides. Therefore, the annealing environment and temperature conditions greatly affect the interfacial bonding energy and reliability in Cu-Cu bonded wafer stacks.