• 한국재료학회지
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• 제8권10호
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• pp.890-897
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• 1998

n-InP(001)기판과 PECVD법으로 ${Si}_3N_4$(200nm)막이 성장된 InP 기판사이의 direct wafer bonding을 분석하였다. 두 기판을 접촉시켰을 때 이들 사이의 결합력에 크게 영향을 주는 표면 상태를 접촉각 측정과 AFM을 통해서 분석하였다. InP 기판은 $50{\%}$ 불산용액으로 에칭하였을 때 접촉각이 $5^{\circ}$, RMS roughness는 $1.54{\AA}$이었다. ${Si}_3N_4$는 암모니아수 용액으로 에칭하였을 때 RMS roughness가 $3.11{\AA}$이었다. Inp 기판과 ${Si}_3N_4$/InP를 각각 $50{\%}$ 불산 용액과 암모니아수 용액에 에칭한 후 접촉시켰을 때 상당한 크기의 초기 겹합력을 관찰할 수 있었다. 기계적으로 결합된 시편을 $580^{\circ}C$-$680^{\circ}C$, 1시간동안 수소 분위기와 질소분우기에서 열처리하였다. SAT(Scanning Acoustic Tomography)측정으로 두 기판 사이의 결합여부를 확인하였다. shear force로 측정한 InP 기판과 ${Si}_3N_4$/InP사이의 결합력은 ${Si}_3N_4$/InP 계면의 결합력만큼 증가되었다. TEM과 AES를 이용해서 di-rect water bonding 계면과 PECVD계면을 분석하였다.

• 대한기계학회논문집A
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• 제26권6호
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• pp.1187-1193
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• 2002

Anodic bonding process has been quantitatively evaluated based on the Taguchi analysis of the interfacial fracture toughness, measured at the interface of anodically bonded silicon-glass bimorphs. A new test specimen with a pre-inserted blade has been devised for interfacial fracture toughness measurement. A set of 81 different anodic bonding conditions has been generated based on the three different conditions for four different process parameters of bonding load, bonding temperature, anodic voltage and voltage supply time. Taguchi method has been used to reduce the number of experiments required for the bonding strength evaluation, thus obtaining nine independent cases out of the 81 possible combinations. The interfacial fracture toughness has been measured for the nine cases in the range of 0.03∼6.12 J/㎡. Among the four process parameters, the bonding temperature causes the most dominant influence to the bonding strength with the influence factor of 67.7%. The influence factors of other process parameters, such as anodic voltage and voltage supply time, bonding load, are evaluated as 18%, 12% and 2.3%, respectively. The maximum bonding strength of 7.23 J/㎡ has been achieved at the bonding temperature of 460$\^{C}$ with the bonding load of 45gf/㎠, the applied voltage of 600v and the voltage supply time of 25minites.

• 한국분말재료학회지
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• 제13권1호
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• pp.62-67
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• 2006

Friction welding of $Al_2O_3$ particulate reinforced aluminum composites was performed and the following conclusions were drawn from the study of interfacial bonding characteristics and the relationship between experimental parameters of friction welding and interfacial bond strength. Highest bonded joint efficiency (HBJE) approaching $100\%$ was obtained from the post-brake timing, indicating that the bonding strength of the joint is close to that of the base material. For the pre-brake timing, HBJE was $65\%$. Most region of the bonded interface obtained from post-brake timing exhibited similar microstructure with the matrix or with very thin, fine-grained $Al_2O_3$ layer. This was attributed to the fact that the fine-grained $Al_2O_3$ layer forming at the bonding interface was drawn out circumferentially in this process. Joint efficiency of post-brake timing was always higher than that of pre-brake timing regardless of rotation speed employed. In order to guarantee the performance of friction welded joint similar to the efficiency of matrix, it is necessary to push out the fine-grained $Al_2O_3$ layer forming at the bonding interface circumferentially. As a result, microstructure of the bonded joint similar to that of the matrix with very thin, fine-grained $Al_2O_3$ layer can be obtained.

• Journal of Welding and Joining
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• 제15권5호
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• pp.56-63
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• 1997

In The study, the bonding of WC-9%Co to SUJ2 steel using Ag-Cu-Zn-Cd insert metal has performed to investigate the bonding properties by heat-treatment. Bonding was brazed for 5-30min at 95$0^{\circ}C$, performed solution treatment for 5 min at 85$0^{\circ}C$ and sustained subsequently oil quenching. To investigate the effect of heat-treatment, tempering was executed at $600^{\circ}C$ for 30 min after oil quenching. Mechnical properties and chemical compositions on the brazed bonding interface were investigated by means of microstructural observation, 4-point bending test and EDS and XRD measurements. The results obtained were as follows. 1) The bonding strength of WC-9%Co/SUJ2 joints by Ag-Cu-Zn-Cd insert metal obtained about 78, 117 and 72MPa after brazing for 5, 20 and 30 min at 95$0^{\circ}C$. And the highest bonding strength obtained about 131MPa after brazing for10 min at 95$0^{\circ}C$ 2) Higher bonding strength of 288MPa was obtained in the joint that brazed for 10 min at 95$0^{\circ}C$, and carried out tempering for 30 min at $600^{\circ}C$ subsequently. 3) Fracture of joint brazed by Ag-Cu-Zn-Cd insert metal for 5, 10, 20 and 30 min created WC-9%Co/SUJ2 interface. The joint that brazed for 10 min at 95$0^{\circ}C$ and then tempered for 30 min at $600^{\circ}C$ was fractured at the site of WC-9%Co.

• 한국구조물진단유지관리공학회 논문집
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• 제20권1호
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• pp.25-32
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• 2016

본 연구는 고강도 섬유보강 시멘트 복합체(UHSCC) 접착성능을 평가하는 것이 목적이다. Direct shear test를 통해 압축전단접착강도를 측정한 결과 NC(보통강도콘크리트)+NC 실험체($150{\times}150{\times}150mm$)에서는 모든 수준에서 유사한 압축전당접착강도를 나타내었고, 반면 UHSCC+UHSCC에서는 지연타설 30분 후부터 0분에 비해 압축전단접착강도가 낮아지는 것을 확인할 수 있었다. 이를 통한 접착면의 파괴모드를 분석한 결과 NC+NC 에서는 모든 수준에서 비계면 파괴를 보였고 UHSCC+UHSCC에서는 30분, 60분, 90분 시험체에서 계면파괴가 일어났다. NC 및 UHSCC의 타설면을 XRD 시험을 통해 분석한 결과 NC 시험체에 비해 UHSCC의 시험체 에서 많은량의 $SiO_2$의 성분이 검출되는 것을 알 수 있었고 UHSCC에서 나타난 코팅막의 주성분의 대부분은 $SiO_2$로 사료된다. 따라서 본 연구에서 사용된 UHSCC는 지연타설 30분 후 부터는 접착성능의 저하로 구조체로서의 사용이 어렵다고 판단된다. 금후 연구에서는 콜드조인트 발생 부위의 면처리 방법을 통한 접착성능 향상이 필요하다고 사료된다.

• Journal of Welding and Joining
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• 제13권3호
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• pp.106-115
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• 1995

To know the bonding phenomena of Ti/Cu brazed joint, a characteristic of microstructures in bonding interlayer of vacuum brazed pure Ti to Cu has been studied in the temperature range from 1088 to 1133K for various bonding times using Ag-28wt%Cu filler metal. Also intermediate phases formed in bonded interlayer and behavior of layer growth have been investigated. The obtained results in this study are as follows: 1) Liquid insert metal width at the each brazing temperature was proportional to the square root of brazing time, and it was considered that the liquid insert metal width was controlled by the diffusion rate process of primary .alpha.-Cu formed at the Ti side. 2) Intermediate phases formed near the Ti interface were .betha.-Ti and intermetallic compounds TiCu, Ti$_{2}$Cu, Ti$_{3}$Cu, and TiCu. 3) .betha.-Ti formed in Ti base metal durig brazing transformed to lamellar structure, .alpha.-Ti + Ti$_{2}$Cu. The structure came from the eutectoil decomposition reaction in cooling. And the width of .betha.-Ti layer was proportional to the square root of brazing time, and it was considered that the growth of .betha.-Ti layer was controlled by interdiffusion rate process in .betha.-Ti. 4) The layer growth of TiCu, Ti$_{3}$Cu$_{4}$ and TiCu, phases formed near the Ti interface was linerface was linearly proportional to the brazing time, and it was considered that the layer growth of these phases was controlled by the chemical reaction rate at the interface.

• Transactions on Electrical and Electronic Materials
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• 제18권4호
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• pp.181-184
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• 2017

Multilayer ceramics in which piezoelectric layers of $0.90Pb(Zr_{0.48}Ti_{0.52})O_3-0.05Pb(Mn_{1/3}Sb_{2/3})O_3-0.05Pb(Zn_{1/3}Nb_{2/3})O_3$ (0.90PZT-0.05PMS-0.05PZN) stack alternately with silver electrode layers were prepared by an advanced low-temperature co-fired ceramic (LTCC) method. The electrical properties and bonding strength of the multilayers were associated with the interface morphologies between the piezoelectric and silver-electrode layers. Usually, the inner silver electrodes are fabricated by sintering silver paste in multi-layer stacks. To improve the interface bonding strength, piezoelectric powders of 0.90PZT-0.05PMS-0.05PZN with an average particle size of $23{\mu}m$ were added to silver paste to form a gradient interface. SEM observation indicated clear interfaces in multilayer ceramics without powder addition. With the increase of piezoelectric powder addition in the silver paste, gradient interfaces were successfully obtained. The multilayer ceramics with gradient interfaces present greater bonding strength as well as excellent piezoelectric properties for 30~40 wt% of added powder. On the other hand, over addition greatly increased the resistance of the inner silver electrodes, leading to a piezoelectric behavior like that of bulk ceramics in multilayers.

• 한국안전학회지
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• 제32권1호
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• pp.9-14
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• 2017

Diffusion bonding is a technique that has the ability to join materials with minimum change in joint micro-structure and deformation of the component. The quality of the joints produced was examined by metallurgical characterization and the joint micro-structure developed across the diffusion bonding was related to changes in mechanical properties as a function of the bonding time. An increase in bonding time also resulted in an increase in the micro-hardness of the joint interface from 55 VHN to 180 VHN, The increase in hardness was attributed to the formation of intermetallic compounds which increased in concentration as bonding time increased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.338-341
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• 1996

Anodic bonding is a key technology for micromechanical components. The main advantages of this method can be formed in a batch process, over large areas, and is permanent and irreversible. In this paper, the bonding was performed at temperatures ranging from 300 to 450 $^{\circ}C$, voltages 400 to 1000 V, and times 10 to 30 minutes. The sizes of the Si and the Pyrex #7740 glass were 6 mm $\times$6 mm, respectively. Bonding processes and voids were observed by the optical microscope, and the composition of the anodic bonding interface was analyzed by the SIMS. Optimum condition of the anodic bonding was at temperature above 40$0^{\circ}C$ without regard to voltage.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2005년도 춘계학술발표대회 개요집
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• pp.43-45
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• 2005

A precise bonding technique, transmission laser bonding using energy transfer, for polymer micro devices is presented. The irradiated IR laser beam passes through the transparent part and absorbed on the opaque part. The absorbed energy is converted to heat and bonding takes place. In order to optimize the bonding quality, the temperature profile on the interface must be obtained. Using optical measurements of the both plates, the absorbed energy can be calculated and heat transfer model was applied for obtaining the transient temperature profile. The transmission laser bonding has a potential in the local precise bonding in MEMS or Lab-on-a-chip.