• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.134-135
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• 2003

The dental implant materials required good mechanical properties, such as fatigue strength, combined with a high resistance to corrosion. For increasing fatigue resistance and delaying onset of stress corrosion cracking, shot peening has been used for > 50 years to extend service life of metal components. However, there is no information on the electrochemical behavior of shot peened and hydroxyapatite(HA) coated Ti-6Al-4V alloys. To increase fatigue strength, good corrosion resistance, and biocompatibility, the electrochemical characteristics of Ti/TiN/HA coated and shot peened Ti-6Al-4V alloys by electron beam physical vapor deposition(EB-PVD) have been researched by various electrochemical method in 0.9%NaCl. Ti-6Al-4V alloys were prepared under the condition of hydrogen and vacuum arc furnace. The produced materials were quenched at 1000$^{\circ}C$ under high purity dried Ar atmosphere and were hold at 500$^{\circ}C$ for 2 hrs to achieve the fatigue strength(1140㎫) of materials. Ti-6Al-4V alloys were prepared under the condition of hydrogen and vacuum arc furnace. Shot peening(SP) and sand blasting treatment was carried out for 1, 5, and 10min. On the surface of Ti-6Al-4V alloys using the steel balls of 0.5mm and alumina sand of 40$\mu\textrm{m}$ size. Ti/TiN/HA multilayer coatings were carried out by using electron-beam deposition method(EB-PVD) as shown Fig. 1. Bulk Ti, powder TiN and hydroxyapatite were used as the source of the deposition materials. Electrons were accelerated by high voltage of 4.2kV with 80 - 120mA on the deposition materials at 350$^{\circ}C$ in 2.0 X 10-6 torr vacuum. Ti/TiN/HA multilayer coated surfaces and layers were investigated by SEM and XRD. A saturated calomel electrode as a reference electrode, and high density carbon electrode as a counter electrode, were set according to ASTM GS-87. The potentials were controlled at a scan rate of 100 mV/min. by a potentiostat (EG&G Co.273A) connected to a computer system. Electrochemical tests were used to investigate the electrochemical characteristics of Ti/TiN/HA coated and shot peened materials in 0.9% NaCl solution at 36.5$^{\circ}C$. After each electrochemical measurement, the corrosion surface of each sample was investigated by SEM.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.35-38
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• 2003

Polymer light emitting diode (PLED) with an ITO/MEH-PPV/Al structure were prepared by spin coating method on the ITO (indium tin oxide)/glass substrates, using poly(2-methoxy-5-(2-ethylhexoxy)-1,4-phenylenevinylene (MEH-PPV) as the light emitting material. The dependence of heat treatment on the electrical and optical properties for the prepared PLED samples were investigated. The luminance decreased greatly from 630 cd/$\m^2$ to 280 cd/$\m^2$ at 10V input voltage as the heating temperature increased from $65^{\circ}C$ to $170^{\circ}C$. In addition, the luminance efficiency was found to be about 2 lm/W for the sample heat treated at $65^{\circ}C$. These results may be related to the interface roughness and/or the formation of an insulation layer, which is caused by the reaction between electrode and MEH-PPV organic luminescent film layer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.407-410
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• 1998

The characteristics of $(Ba,Sr)TiO_3$[BST] thin films with the variation of $O_2/Ar$ ratio in sputtering gas deposited on $RuO_2$ bottom electrode were investigated. Dielectric constant of BST film increases from 135 to 190 with increasing oxygen partial pressure from 10 to 50, which is mainly due to the improved crystallinity of BST film. The instability of $RuO_2$ surface in $BST/RuO_2$ interface and the increase in the surface roughness of BST thin films with higher $O_2/Ar$ ratio appeared to play an important roles on the degradation of the leakage current characteristics of $Al/BST/RuO_2$ capacitor with various $O_2/Ar$ ratio in sputtering gas. As a consequence, the leakage current of BST thin film showed the lowest value of $1.9{\times}10^{-7}\; A/{\textrm}{cm}^2$ at $O_2/Ar{\approx}1/9$.

• Corrosion Science and Technology
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• v.17 no.2
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• pp.45-53
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• 2018

A new 80Ti-15Ta-5Zr wt% alloy surface was protected by anodic oxidation in phosphoric acid solution. The protective oxide layer (TiO2, ZrO2 and Ta suboxides and thickness of 15.5 nm) incorporated $PO{_4}^{3-}$ ions from the solution, according to high resolution XPS spectra. The AFM analysis determined a high roughness with SEM detected pores (20 - 50 nm). The electrochemical studies of bare and anodically oxidized Ti-15Ta-5Zr alloy in Carter-Brugirard saliva of different pH values and saliva with 0.05M NaF, pointed to a nobler surface for the protected alloy, with a thicker electrodeposited oxide layer acting as a barrier against aggressive ions. The oxidized alloy significantly decreased corrosion current densities and total quantity of ions released into the oral environment in comparison with the bare one, at higher polarisation resistance and protective capacity of the electrodeposited layer. The impedance data revealed a bi-layered oxidation film formed by: a dense, compact, barrier layer in contact with the metallic substrate, decreasing the potential gradient across the metal/oxide layer/solution interface, reducing the anodic dissolution and a more permissive, porous layer in contact with the electrolyte. The open circuit potential for protected alloy shifted to nobler values, with thickening of the oxidation film signifying long-term protection.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.304.2-304.2
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• 2016

Hafnium oxide-aluminum oxide (HfO2-Al2O3) dielectric films have been fabricated by Pulsed Laser Deposition (PLD), and their properties are studied in comparison with HfO2 films. As a gate dielectric of the TFT, in spite of its high dielectric constant, HfO2 has a small energy band gap and microcrystalline structure with rough surface characteristics. When fabricated by the device, it has the drawback of generating a high leakage current. In this study, the HfAlO films was obtained by Pulsed Laser Deposition with HfO2-Al2O3 target(chemical composition of (HfO2)86wt%(Al2O3)14wt%). The characteristics of the thin Film have been investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The X-ray diffraction studies confirmed that the HfAlO has amorphous structure. The RMS value can be compared to the surface roughness via AFM analysis, it showed HfAlO thin Film has more lower properties than HfO2. The energy band gap (Eg) deduced by spectroscopic ellipsometer was increased. HfAlO films was expected to improved the interface quality between channel and gate insulator. Apply to an oxide thin Film Transistors, HfAlO may help improve the properties of device.

• The Journal of Advanced Prosthodontics
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• v.12 no.3
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• pp.157-166
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• 2020

PURPOSE. The aim of this study was to evaluate the clinical performance and reliability of plasma sprayed nanostructured zirconia (NSZ) coating. MATERIALS AND METHODS. This study consisted of three areas of analysis: (1) Mechanical property: surface roughness of NSZ coating and bond strength between NSZ coating and titanium specimens were measured, and the microstructure of bonding interface was also observed by scanning election microscope (SEM). (2) Biocompatibility: hemolysis tests, cell proliferation tests, and rat subcutaneous implant test were conducted to evaluate the biocompatibility of NSZ coating. (3) Mechanical compatibility: fracture and artificial aging tests were performed to measure the mechanical compatibility of NSZ-coated titanium abutments. RESULTS. In the mechanical study, 400 ㎛ thick NSZ coatings had the highest bond strength (71.22 ± 1.02 MPa), and a compact transition layer could be observed. In addition, NSZ coating showed excellent biocompatibility in both hemolysis tests and cell proliferation tests. In subcutaneous implant test, NSZ-coated plates showed similar inflammation elimination and fibrous tissue formation processes with that of titanium specimens. Regarding fatigue tests, all NSZ-coated abutments survived in the five-year fatigue test and showed sufficient fracture strength (407.65-663.7 N) for incisor teeth. CONCLUSION. In this study, the plasmasprayed NSZ-coated titanium abutments presented sufficient fracture strength and biocompatibility, and it was demonstrated that plasma spray was a reliable method to prepare high-quality zirconia coating.

• Journal of Sensor Science and Technology
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• v.9 no.2
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• pp.134-140
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• 2000

Si wafer direct bonding(SDB) technology is very attractive for both Si-on-insulator(SOI) electronic devices and MEMS applications. This paper presents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration and applied pressure. The bonding strength was evaluated by tensile strength method. A bond characteristic on the interface was analyzed by using FT-IR, and surface roughness according to HF concentration was analyzed by AFM. Si-F bonds on Si surface after HF pre-treatment are replaced by Si-OH during a DI water rinse. Consequently, hydrophobic wafer was bonded by hydrogen bonding of Si-OH$\cdots$(HOH$\cdots$HOH$\cdots$HOH)$\cdots$OH-Si. The pre-bonding strength depends on the HF pre-treatment condition before pre-bonding. (Min : $2.4kgf/cm^2{\sim}$Max : $14.9kgf/cm^2$)

• Korean Journal of Materials Research
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• v.13 no.1
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• pp.43-47
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• 2003

As and BF$_2$dopants are implanted for the formation of source/drain with dose of 1${\times}$10$^{15}$ ions/$\textrm{cm}^2$∼5${\times}$10$^{15}$ ions/$\textrm{cm}^2$ then formed cobalt disilicide with Co/Ti deposition and doubly rapid thermal annealing. Appropriate ion implantation and cobalt salicide process are employed to meet the sub-0.13 $\mu\textrm{m}$ CMOS devices. We investigated the process results of sheet resistance, dopant redistribution, and surface-interface microstructure with a four-point probe, a secondary ion mass spectroscope(SIMS), a scanning probe microscope (SPM), and a cross sectional transmission electron microscope(TEM), respectively. Sheet resistance increased to 8%∼12% as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{V}$ , while sheet resistance uniformity showed very little variation. SIMS depth profiling revealed that the diffusion of As and B was enhanced as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{＋}$ . The surface roughness of root mean square(RMS) values measured by a SPM decreased as dose increased in $CoSi_2$$n^{＋}$ , while little variation was observed in $CoSi_2$$p^{＋}$ . Cross sectional TEM images showed that the spikes of 30 nm∼50 nm-depth were formed at the interfaces of $CoSi_2$$n^{＋}$ / and $CoSi_2$/$p^{＋}$, which indicate the possible leakage current source. Our result implied that Co/Ti cobalt salicide was compatible with high dose sub-0.13$\mu\textrm{m}$ process.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.274-278
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• 1997

(Ba, Sr) TiO$_3$(BST) thin films were prepared on RuO$_2$/Si substrates by rf magnetron sputtering and annealing was followed at temperatures ranging from 550 to 80$0^{\circ}C$ in $N_2$or $O_2$atmosphere. The effects of annealing conditions on the properties of BST film deposited on RuO$_2$bottom electrodes were investigated. It was found that the crystallinity. surface roughness, and grain size of BST films vary with the annealing temperature but they are not dependent upon the annealing atmosphere. The flat region in the current-voltage (I-V) curves of BST capacitors shortened with increasing annealing temperature under both atmospheres. This is believed to be due to the lowering of potential barrier caused by unstable interface and the increase of charge The shortening of the flat region by $O_2$annealing was more severe than that by $N_2$-annealing. As a result, there was no flat region when the films were annealed at 700 and 80$0^{\circ}C$ in $O_2$atmosphere. The dielectric properties of BST films were improved by annealing in either atmosphere. however, a degradation with frequency was observed when the films were annealed at relatively high temperature under $O_2$atmosphere.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.89-98
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• 2003

The electrical and mechanical properties of sputtered Cu(Mg) films are investigated for highly reliable interconnects. The roughness, adhesion, hardness and resistance to thermal stress of Cu(Mg) film annealed in vacuum at $400^{\circ}C$ for 30min were improved than those of pure Cu film. Moreover, the flat band voltage(V$_{F}$ ) shift in the Capacitance-Voltage(C-V) curve upon bias temperature stressing(BTS) was not observed and leakage currents of Cu(Mg) into $SiO_2$ were three times less than those of pure Cu. Because Mg was easy to react with oxide than Cu and Si after annealing, the Mg Oxide which formed at surface and interface served as a passivation layer as well.