• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.277-278
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• 2005

Admittance Spectroscopic analysis was applied to study the effect of LiF buffer layer and to model the equivalent circuit for poly(2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV)-based polymer light emitting diodes (PLEDs) with the LiF cathode buffer layer. The single layer device with ITO/MEH-PPV/Al structure can be modeled as a simple parallel combination of resistor and capacitor. Insertion of a LiF layer at the Al/MEH-PPV interface shifts the highest occupied molecular orbital level and the vacuum level of the MEH-PPV layer as a result the barrier height for electron injection at the Al/MEH-PPV interface is reduced. The admittance spectroscopy measurement of the devices with the LiF cathode buffer layer shows reduction in contact resistance ($R_c$), parallel resistance ($R_p$) and increment in parallel capacitance ($C_p$).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.267-270
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• 2003

We have studied the interfacial diffusion phenomena and the role of ${\alpha}-Al_2O_3$ buffer layer as a diffusion barrier in the $Ba-ferrite/SiO_2$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite ($1900-{\AA}-thick)/SiO_2$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_2O_3$ buffer layer ($110-{\AA}-thick$) in the interface of $Ba-ferrite/SiO_2$ thin film. During the annealing of $Ba-ferrite/{\alpha}-Al_2O_3/SiO_2$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The smooth interface of the film was also clearly shown by the cross-sectional FESEM. The magnetic properties, such as saturation magnetization 3nd intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_2O_3$ buffer layer. Our study suggests that the ${\alpha}-Al_2O_3$ buffer layer act as a useful interfacial diffusion barrier in the $Ba-ferrite/SiO_2$ thin films.

• 한국통신학회논문지
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• 제16권12호
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• pp.1336-1347
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• 1991

I본 논문에서는 ISDN(Integrated Services Digital Network)환경에서 PC(Personal Computer)를 상호 연결하여 컴퓨터 간에 정보를 교환하여 패킷 통신망을 구현하기 위하여 ISDN 패킷 단말기용 PC 접속기를 설계하고 구현하였다. ISDN 패킷 단말기용 PC 접속기는 ISDN 계층 1기능과 ISDN 계층 2기능을 수행하는 S 인터페이스 처리부와 X.25에 서비스를 제공하며, X.25는 패킷 모드에서 수행하는 터미널을 위해 DTE(Data Terminal Equipment)와 DCE(Data Circuit Terminating Equipment)간의 접속을 규정하고 있다. S 인터페이스 처리부는 AMD사의 Am79C30칩을 사용하였으며, ISDN 패킷 처리부는 D 채널에 AMD 사의 AmZ8038의 FIFO(First Out)칩을 사용하였으며, D채널의 전반적인 신호절차 제어를 위해 인텔사의 8086 마이크로세서를 사용하였다. S 인터페이스 처리부는 ISDN 계층 1,2로 구성되어 있으며, 계층 간 통신을 위해 메일박스(mail box)를 사용하였다. ISDN 패킷 처리부는 X.25 레벨에서 모듈별로 구성되어 있으며, S 인터페이스 처리부와 ISDN 패킷 처리부 간 통신을 위하여 인터페이스 제어기를 사용하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.273-278
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• 2000

In order to study effects of interface layers between PZT films and electrodes for MFM(Metal-Ferroelectric-Metal) structure capacitors, we have fabricated the capacitors with the Pt/PZT/interface-layer/Pt/$TiO_2/SiO_2/Si$ structure. $PT(PbTiO_3)$ interface layers were formed by sol-gel deposition and PbO, $ZrO_2$ and $TiO_2$ thin layers were deposited by reactive sputtering. $TiO_2$ interface layers result in the finest grains of PZT films compared to $PbO_2$ and $ZrO_2$ layers. On the other hand, PT interface layers result in improved morphology of PZT films and do not significantly change ferroelectric properties. It is also observed that seed layers at the middle and top of PZT films do not give significant effects on grain size but the PT seed layer at the interface between the bottom electrode and the PZT films results in the small grain size.

• 한국해양환경ㆍ에너지학회지
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• 제3권1호
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• pp.25-34
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• 2000

이중유벽 사이에 가두어진 기름층과 전방 유벽의 끝에서 발생하는 보오텍스 거동간의 관계를 보기 위하여 파노라마 PIV 기법을 사용하였다. 물-기름 자유경계면 근처의 순간 및 시간평균 경계층 유속분포를 계측하여 경계면 상의 전단응력 도출가능성을 확인하였다. 본 기법을 사용하면 자유경계면의 거동이 작거나 규칙적인 경우 경계면상 전단층내 상세 유동구조를 파악하기 충분한 정도의 해상도를 가진 결과를 얻을 수 있다고 판단되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.230-230
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• 2013

In amorphous or microcrystalline thin-film silicon solar cells, p-i-n structure is used instead of p/n junction structure as in wafer-based Si solar cells. Hence, these p-i-n structured solar cells inevitably consist of many interfaces and the cell efficiency critically depends on the effective control of these interfaces. In this study, in-situ plasma treatment process of the interfaces was developed to improve the efficiency of a-Si:H solar cell. The p-i-n cell was deposited using a single-chamber VHF-PECVD system, which was driven by a pulsed-RF generator at 80 MHz. In order to solve the cross-contamination problem of p-i layer, high RF power was applied without supplying SiH4 gas after p-layer deposition, which effectively cleaned B contamination inside chamber wall from p-layer deposition. In addition to the p-i interface control, various interface control techniques such as thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, multiple applications of thin i-layer deposition and H2 plasma treatment, H2 plasma treatment of i-layer prior to n-layer deposition, etc. were developed. In order to reduce the reflection at the air-glass interface, anti-reflective SiO2 coating was also adopted. The initial solar cell efficiency over 11% could be achieved for test cell area of 0.2 $cm^2$.

• 한국멀티미디어학회논문지
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• 제8권11호
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• pp.1472-1482
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• 2005

TOE (TCP/IP Offload Engine)는 부하가 많은 대규모 네트워크 서버에서 TCP/IP 프로토콜 처리의 부담을 줄이기 위해 고안된 하드웨어 장치이다. 본 논문에서는 TOE (TCP Offload Engine)를 사용하는 대규모 멀티미디어 서버를 위한 소켓 인터페이스 계층의 설계 및 구현에 대해 다룬다. 제안된 소켓 인터페이스 계층은 리눅스 운영체제 상에서 커널 모듈로 설계, 구현되었으며, BSD소켓 계층과 INET소켓 계층 사이에 존재하면서 응용 프로그램의 소켓 관련 요청을 TOE나 기존 INET소켓 계층으로 전달하는 역할을 한다. 본 논문에서 제안한 소켓 인터페이스는 소켓을 통해 TOE를 사용하는 응용 프로그램에 대해서 모든 표준 소켓 입출력 API와 파일 입출력 관련 API를 그대로 제공하고, 기존 응용 프로그램들에 대해서도 수정 없이 TOE의 기능을 그대로 사용할 수 있는 바이너리 수준의 호환성을 제공하며, 한 시스템에서 TOE와 이더넷 NIC을 동시에 사용할 수 있게 된다.

• Bulletin of the Korean Chemical Society
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• 제28권10호
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• pp.1683-1688
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• 2007

This paper presents a novel simple method for introducing gold nanoparticles in a poly(4-vinylpyridine) (PVP) polymer layer over a glassy carbon (GC) electrode with the aim of forming a tunable electrochemical interface against a cationic ruthenium complex. Initially, AuCl4 ? ions were spontaneously incorporated into a polymer layer containing positively charged pyridine rings in an acidic media by ion exchange. A negative potential was then applied to electrochemically reduce the incorporated AuCl4 ? ions to gold nanoparticles, which was confirmed by the FE-SEM images. The PVP layer with an appropriate thickness over the electrode blocked electron transfer between the electrode and the solution phase for the redox reactions of the cationic Ru(NH3)6 2+ ions. However, the introduction of gold nanoparticles into the polymer layer recovered the electron transfer. In addition, the electron transfer rate between the two phases could be tuned by controlling the number density of gold nanoparticles.

• 한국해양공학회지
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• 제17권6호
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• pp.72-76
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• 2003

This paper deals with the stress singularity developed in a polymer layer that is coated to a concrete surface, due to temperature change. The boundary element method is employed to investigate the behavior of interface stresses. The polymeric layer is assumed to be a linear viscoelastic material, and is thermorheologically simple. The order of the singularity is obtained, numerically, for a given viscoelastic model. Numerical results exhibit the relaxation of interface stresses, and large gradients are observed in the vicinity of the free surface. Results show that the stress singularity factor is relaxed with time, while the order of the singularity increases with time for the viscoelastic model.

• 태양에너지
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• 제8권1호
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• pp.68-73
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• 1988

In the glass/TCO/p-i-n a-Si/Al type of amorphous silicon solar cell, the effects on solar cell efficiency and metastability for the various kinds of TCO analyzed by SAM and ESCA, which was used to measure the diffusion profiles of In and Sn and the Fermi energy shifts in the TCO/p interface respectively. Indium which diffused into a-Si p-layer did not have any significant effects on the Fermi level shift of p-layer when the content of $B_2H_6/SiH_4$ in p-layer was at 1 gas%. The cell fabricated on $SnO_2$ turned out to have the best cell photovoltaic characteristics. ITO fabricated by electron beam deposition system, which was shown to have the greatest rate of diffusion of Indium in ITO/p interface produced the worst metastability among the cells tested.