• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.193.2-193.2
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• 2016

We evaluate the change in defects in the oxidized SiO2 grown on 4H-SiC (0001) by plasma assisted oxidation, by comparing with that of conventional thermal oxide. In order to investigate the changes in the electronic structure and electrical characteristics of the interfacial reaction between the thin SiO2 and SiC, x-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), DFT calculation and electrical measurements were carried out. We observed that the direct plasma oxide grown at the room temperature and rapid processing time (300 s) has enhanced electrical characteristics (frequency dispersion, hysteresis and interface trap density) than conventional thermal oxide and suppressed interfacial defect state. The decrease in defect state in conduction band edge and stress-induced leakage current (SILC) clearly indicate that plasma oxidation process improves SiO2 quality due to the reduced transition layer and energetically most stable interfacial state between SiO2/SiC controlled by the interstitial C.

• Smart Structures and Systems
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• v.19 no.2
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• pp.163-179
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• 2017

The axisymmetric buckling delamination of the Piezoelectric/Metal/Piezoelectric (PZT/Metal/PZT) sandwich circular plate with interface penny-shaped cracks is investigated. The case is considered where open-circuit conditions with respect to the electrical displacement on the upper and lower surfaces, and short-circuit conditions with respect to the electrical potential on the lateral surface of the face layers are satisfied. It is assumed that the edge surfaces of the cracks have an infinitesimal rotationally symmetric initial imperfection and the development of this imperfection with rotationally symmetric compressive forces acting on the lateral surface of the plate is studied by employing the exact geometrically non-linear field equations and relations of electro-elasticity for piezoelectric materials. The sought values are presented in the power series form with respect to the small parameter which characterizes the degree of the initial imperfection. The zeroth and first approximations are used for investigation of stability loss and buckling delamination problems. It is established that the equations and relations related to the first approximation coincide with the corresponding ones of the three-dimensional linearized theory of stability of electro-elasticity for piezoelectric materials. The quantities related to the zeroth approximation are determined analytically, however the quantities related to the first approximation are determined numerically by employing Finite Element Method (FEM). Numerical results on the critical radial stresses acting in the layers of the plate are presented and discussed. In particular, it is established that the piezoelectricity of the face layer material causes an increase (a decrease) in the values of the critical compressive stress acting in the face (core) layer.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.6
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• pp.648-654
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• 2003

Diamond MIS(Metal-Insulator-Semiconductor) diodes and MISFETs(Metal-Insulator-Semiconductor Field Effect Transistors) were fabricated by employing various fluorides as gate insulator, and their electrical properties were closely investigated by means of C-V measurements. The A1/BaF$_2$/diamond MIS structure exhibited outstanding electrical properties. The MIS diode showed a very low surface state density of ∼10$\^$10//$\textrm{cm}^2$ eV near the valence band edge, and the observed effective mobility(${\mu}$$\_$eff/) of the MISFET was 400 $\textrm{cm}^2$/Vs, which is the highest value obtained until now in the diamond FET. From the chemiphysical point of view, the above result might be explained by the reduction of adsorbed-oxygen on the diamond surface via strong chemical reaction by the constituent Ba atom in the insulator during the film deposition(Oxygen-Gettering Effect).

• The Journal of the Korea Contents Association
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• v.11 no.12
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• pp.629-638
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• 2011

Mobile game have an advantage of mobility, portability, and simple interface. These advantages are useful for gesture recognition based game which should not have much content quantity and complex interface. This paper suggests gesture recognition based mobile game content with user movement could be applied directly to the mobile game wherever recognition system is equipped. Gesture is recognized by obtaining user area in image from the depth image of TOF camera and going through SVM(Support Vectorn Machine) using EOH(Edge Of Histogram) features of user area. And we confirmed that gesture recognition can be utilized to user input of mobile game content. Proposed technique can be applied to a variety of content, but this paper shows a simple way of game contents which is consisted of moving and jumping newly.

• The Journal of the Korea Contents Association
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• v.10 no.8
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• pp.11-17
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• 2010

In this paper, we propose HMM-based upper-body gesture. First, to recognize gesture of space, division about pose that is composing gesture once should be put priority. In order to divide poses which using interface, we used two IR cameras established on front side and side. So we can divide and acquire in front side pose and side pose about one pose in each IR camera. We divided the acquired IR pose image using SVM's non-linear RBF kernel function. If we use RBF kernel, we can divide misclassification between non-linear classification poses. Like this, sequences of divided poses is recognized by gesture using HMM's state transition matrix. The recognized gesture can apply to existent application to do mapping to OS Value.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.900-904
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• 2011

In this paper, we investigated an anomalous hump phenomenon under the positive bias stress in p-type LTPS TFTs. The devices with inferior electrical performance also show larger hump phenomenon. which can be explained by the sub-channel induced from trapped electrons under thinner gate oxide region. We can confirm that the devices with larger hump have larger interface trap density ($D_{it}$) and grain boundary trap density ($N_{trap}$) extracted by low-high frequency capacitance method and Levinson-Proano method, respectively. From the C-V with I-V transfer characteristics, the trapped electrons causing hump seem to be generated particularly from the S/D and gate overlapped region. Based on these analysis, the major cause of an anomalous hump phenomenon under the positive bias stress in p-type poly-Si TFTs is explained by the GIDL occurring in the S/D and gate overlapped region and the traps existing in the channel edge region where the gate oxide becomes thinner, which can be inferred by the fact that the magnitude of the hump is dependent on the average trap densities.

• Transactions of the Korean Society of Mechanical Engineers
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• v.17 no.11
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• pp.2752-2761
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• 1993

The purpose of this study is to confirm the decreasing problems of residual bending strength, and the fracture machanism experimentally when CFRP composite laminates are subjected to Foreign Object Damage. Composite laminates used for this experiment are CFRP orthotropy laminated plates, which have two-interfaces [O/sub 6//sup o//90/sub 6//sup o/]sub sym/ and four-interfaces [O/sub 3//sup o//90/sub 6//sup o//O/sub 3//sup o]/sub sym/. When the specimen is subjected to transverse impact by a steel ball, the delamination area generated by impact damage is observed by using SAM(Scanning Acoustic Microscope). also, Thefracture surfaces obtained by three-point bending test were observed by using SEM (Scanning Electron Microscope). Then, fracture mechanism was investigated based on the observed delamination area and fracture surface. The results were summarized as follows; (1) It is found that for the specimen with more interface, the critical delamination energy is increased while delamination-development energy is decreased. (2) Residual bending strength of specimen A is greater than that of Specimen B within the impact range of impact energy 1. 65J (impacted-side compression) and 1. 45J (impacted-side tension). On the other hand, when the impact energy is beyond the above ranges, residual bending strength of specimen A is smaller than that of specimen B. (3) In specimen A and B, residual strength of CFRP plates subjected to impact damage is lower in the impacted-side compression than in the impacted-side tension. (4) In the case of impacted-side compression, fracture is propagated from the transverse crack generat-ed near impact point. On the other hand, fracture is developed toward the impact point from the edge of interface-B delamination in the case of impacted-side tension.

• Geomechanics and Engineering
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• v.37 no.1
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• pp.65-72
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• 2024

Water ingress poses a common and intricate geological hazard with profound implications for tunnel construction's speed and safety. The project's success hinges significantly on the precision of estimating water inflow during excavation, a critical factor in early-stage decision-making during conception and design. This article introduces an optimized model employing the gene expression programming (GEP) approach to forecast tunnel water inflow. The GEP model was refined by developing an equation that best aligns with predictive outcomes. The equation's outputs were compared with measured data and assessed against practical scenarios to validate its potential applicability in calculating tunnel water input. The optimized GEP model excelled in forecasting tunnel water inflow, outperforming alternative machine learning algorithms like SVR, GPR, DT, and KNN. This positions the GEP model as a leading choice for accurate and superior predictions. A state-of-the-art machine learning-based graphical user interface (GUI) was innovatively crafted for predicting and visualizing tunnel water inflow. This cutting-edge tool leverages ML algorithms, marking a substantial advancement in tunneling prediction technologies, providing accuracy and accessibility in water inflow projections.

• Journal of the Korean Society of Clothing and Textiles
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• v.15 no.1
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• pp.70-75
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• 1991

Contact angle measuring device was developed in this laboratory using laser beam projec-tion. The new method allows for rapid and direct determination of stationary, advancing, and receding contact angles on both planar and nonplanar solid surfaces, including fibers with very small diameters. A narrow laser beam impinges on an edge of an interface of liquid and solid. This makes two projected laser beam lines upon and radiating from the center of a protractor scale on a tangent screen. Contact angle is measured by determining the difference in angle on the protractor scale between the two projected laser beam lines. Contact angles measured on Perspex-CQ using this instrument were in agreement with the literature. it was shown that this instrument provides a novel method for the facile and accurate measurement of contact angles.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.5
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• pp.835-842
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• 2002

In this paper, static and fatigue bending strengths and failure mechanisms of CFRP (carbon fiber reinforced plastics) laminates having impact damages have been evaluated. Composite laminates used for this experiment are CF/EPOXY orthotropy laminated plates, which have two-interfaces $[0^0_ 4/90^0_4]_{ sym}$. A steel ball launched by the air gun collides against CFRP laminates to generate impact damages. The damage growth during bending fatigue test is observed by the scanning acoustic microscope (SAM) and also, the fracture surfaces were observed by using the SEM (scanning electron microscope). In the case of impacted-side compression, fracture is propagated from the transverse crack generated near impact point. On the other hand, fracture is developed toward the impact point from the edge of interface-B delamination in the case of impacted-side tension. Eventually, failure mechanisms have been confirmed based on the observed delamination areas and fracture surfaces.