• Electrical & Electronic Materials
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• v.16 no.9
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• pp.62.1-62
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• 2003

Silicon oxide with thickness lee than 9 nm is fabricated by tube furnace oxidation. Nitrogen is added to dilute the oxidation rate. Aluminum dots with radius of 0.05 cm are deposited on the oixde. High frequency capacitance-voltage(HF C-V), conductance-voltage(G-V) and current-voltage(I-V) characteristics are measured. Annealing under nitrogen atmosphere is carried out with different time and at different temperature. Densities of the interface states before and after annealing are compared. After annealing, a decrease in density of the interface states is found. Experiments show that 45$0^{\circ}C$ annealing for 30 minutes has the lowest density of the interface states.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.293-296
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• 2016

Using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements, the electrical properties of Cu/n-InP Schottky diodes were investigated. The values of C and G/ω were found to decrease with increasing frequency. The presence of interface states might cause excess capacitance, leading to frequency dispersion. The negative capacitance was observed under a forward bias voltage, which may be due to contact injection, interface states or minority-carrier injection. The barrier heights from C-V measurements were found to depend on the frequency. In particular, the barrier height at 200 kHz was found to be 0.65 eV, which was similar to the flat band barrier height of 0.66 eV.

• International Journal of Korean Welding Society
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• v.2 no.1
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• pp.1-10
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• 2002

The thermal contact conductance at different temperatures and with different electrode forces and zinc coating morphology was measured by monitoring the infrared emissions from the one dimensionally simulated contact heat transfer experiments. The contact heat transfer coefficients were presented as a function of the harmonic mean temperature of the two contacting surfaces. Using these contact heat transfer coefficients and experimentally measured temperature profiles, the electrical contact resistivities both for the faying interface and electrode-workpiece interface were deduced from the numerical analyses of the one dimension simulation welding. It was found that the average value of the contact heat transfer coefficients for the material with zinc coating (coating weight from 0 g/$mm^2$to 100 g/$mm^2$) ranges from 0.05 W/$mm^2$$^{\circ}C$ to 2.0 W/$mm^2$$^{\circ}C$ in the temperature range above 5$0^{\circ}C$ harmonic mean temperature of the two contacting surfaces. The electrical contact resistivity deduced from the one dimension simulation welding and numerical analyses showed that the ratio of electrical contact resistivity at the laying interface to the electrical contact resistivity at the electrode interface is smaller than one far both bare steel and zinc coated steel.

• Bulletin of the Korean Chemical Society
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• v.20 no.11
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• pp.1340-1344
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• 1999

The electrochemical behavior of oxide layers on aluminium was studied using electrochemical impedance spectroscopy. Impedance spectra were taken at a compact and a porous oxide layer of Al. The anodic films on Al have a variable stoichiometry with gradual reduction of oxygen deficiency towards the oxide-electrolyte interface. Thus, the interpretation of impedance spectra for oxide layers is complicated, with the impedance of surface layers differing from those of ideal capacitors. This layer behavior with conductance gradients was caused by an inhomogeneous dielectric. The frequency response cannot be described by a single RC element. The oxide layers of Al are properly described by the Young model of dielectric constant with a vertical decay of conductivity.

• Proceedings of the Korean Magnestics Society Conference
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• 2014.11a
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• pp.145-145
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• 2014

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.111-113
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• 1989

Recently nitrided oxides have been investigated for the application as the replacement of thermally grown oxides in the MIS devices. In this paper, nitrided oxides which were treated by the $N_2$ plasma were fabricated with the 350 $^{\circ}C$ substrate temperature, 0.2 torr chamber pressure, 250 watt RF power, 60 seem $N_2$ flow rate, 30 mins treatment time. After the UV light is radiated on the sample, it is noticed that the interface state density, $N_{ss}$, is slightly decreased. Under the UV light, the samples are stress by $\pm$DC bias. After those treatment interface state density. $N_{ss}$, is increased.

• 한국전산유체공학회:학술대회논문집
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• 2010.05a
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• pp.174-180
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• 2010

Conductive and radiative thermal model configurations of an imager of a geostationary satellite are presented. A two-plane method is introduced for three dimensional conductive coupling which is not able to be treated by thin shell plate thermal modeling technique. Especially the two-plane method is applied to massive matters and PIP(Payload Interface Plate) in the imager model. Some massive matters in the thermal model are modified by adequate correction factors or equivalent thickness in order to obtain the numerical results of thermal modeling to be consistent with the analytic model. More detailed nodal breakdown is specially employed to the object which has the rapid temperature gradient expected by a rule of thumb. This detailed thermal model of the imager is supposed to be used for detailed analyses and test predictions, and be correlated with the thermal vacuum test results before final in-flight predictions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.65-65
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• 2009

High temperature silicon carbide Schottky diode was fabricated with Au deposited on poly 3C-SiC thin film grown on p-type Si(100) using atmospheric pressure chemical vapor deposition. The charge transport mechanism of the diode was studied in the temperature range of 300 K to 550 K. The forward and reverse bias currents of the diode increase strongly with temperature and diode shows a non-ideal behavior due to the series resistance and the interface states associated with 3C-SiC. The charge transport mechanism is a temperature activated process, in which, the electrons passes over of the low barriers and in turn, diode has a large ideality factor. The charge transport mechanism of the diode was analyzed by a Gaussian distribution of the Schottky barrier heights due to the Schottky barrier inhomogeneities at the metal-semiconductor interface and the mean barrier height and zero-bias standard deviation values for the diode was found to be 1.82 eV and $s_0$=0.233 V, respectively. The interface state density of the diode was determined using conductance-frequency and it was of order of $9.18{\times}10^{10}eV^{-1}cm^{-2}$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.497-503
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• 2015

It is essential to acquire an accurate and simple technique for extracting the interface trap density ($D_{it}$) in order to characterize the normally-off gate-recessed AlGaN/GaN hetero field-effect transistors (HFETs) because they can undergo interface trap generation induced by the etch damage in each interfacial layer provoking the degradation of device performance as well as serious instability. Here, the frequency-dependent capacitance-voltage (C-V) method (FDCM) is proposed as a simple and fast technique for extracting $D_{it}$ and demonstrated in normally-off gate-recessed AlGaN/GaN HFETs. The FDCM is found to be not only simpler than the conductance method along with the same precision, but also much useful for a simple C-V model for AlGaN/GaN HFETs because it identifies frequency-independent and bias-dependent capacitance components.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.207.1-207.1
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• 2014

High-mobility and two dimensional conduction at the interface between two band insulators, LaAlO3 (LAO) and SrTiO3 (STO), have attracted considerable research interest for both applications and fundamental understanding. Several groups have reported the photoconductivity of LAO/STO, which give us lots of potential development of optoelectronic applications using the oxide interface. Recently, a giant photo response of Pd nano particles/LAO/STO is observed in UV illumination compared with LAO/STO sample. These phenomena have been suggested that the correlation between the interface and the surface states significantly affect local charge modification and resulting electrical transport. Water and gas adsorption/desorption can alter the band alignment and surface workfunction. Therefore, characterizing and manipulating the electric charges in these materials (electrons and ions) are crucial for investigating the physics of metal oxide. Proposed mechanism do not well explain the experimental data in various ambient and there has been no quantitative work to confirm these mechanism. Here, we have investigated UV photo response in various ambient by performing transport and Kelvin probe force microscopy measurements simultaneously. We found that Pd nano particles on LAO can form Schottky contact, it cause interface carrier density and characteristics of persistence photo conductance depending on gas environment. Our studies will help to improve our understanding on the intriguing physical properties providing an important role in many enhanced light sensing and gas sensing applications as a catalytic material in different kinds of metal oxide systems.