• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.370-373
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical Planarization(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper depostion is a mature process from a historical point of view, but a very young process from a CMP persperspective. While copper electrodepostion has been used and stuidied for dacades, its application to Cu damascene wafer processing is only now ganing complete accptance in the semiconductor industry. The polishing mechanism of Cu CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper pasivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.20-23
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing(CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical polishing(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commercial slurries pads, and post-CMP cleaning alternatives are discuss, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper deposition is a mature process from a historical point of view, but a very young process from a CMP perspective. While copper electro deposition has been used and studied for decades, its application to Cu damascene wafer processing is only now gaining complete acceptance in the semiconductor industry. The polishing mechanism of Cu-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper passivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.11 no.2
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• pp.650-669
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• 2017

Coordinated multiple points transmission and reception (CoMP) technology is used to mitigate the inter-cell interference, and increase cell average user normalized throughput and cell edge user normalized throughput. There are two kinds of radio resource schedule strategies in LTE-A/5G CoMP system, and they are called centralized scheduling strategy and distributed scheduling strategy. The regional centralized scheduling cannot solve interference of inter-region, and the distributed scheduling leads to worse efficiency in the utilize of resources. In this paper, a novel distributed scheduling scheme named 9-Cell alternate authorization (9-CAA) is proposed. In our scheme, time-domain resources are divided orthogonally by coloring theory for inter-region cooperation in 9-Cell scenario [6]. Then, we provide a formula based on 0-1 integer programming to get chromatic number in 9-CAA. Moreover, a feasible optimal chromatic number search algorithm named CNS-9CAA is proposed. In addition, this scheme is expanded to 3-Cell scenario, and name it 3-Cell alternate authorization (3-CAA). At last, simulation results indicate that 9/3-CAA scheme exceed All CU CoMP, 9/3C CU CoMP and DLC resource scheduling scheme in cell average user normalized throughput. Especially, compared with the non-CoMP scheme as a benchmark, the 9-CAA and 3-CAA have improved the edge user normalized throughput by 17.2% and 13.0% respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.246-249
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• 2000

The effects of Zr on the mechanical workability and tensile strength of Cu-Ni-Mn-Sn-Al alloys have been investigated and the following results were obtained. The mechanical workability of Cu-Ni-Mn-Sn-Al alloys are increased with addition of Zr. And the surface cracks of specimen were not produced in Zr added Alloys. Especially in condition of hot-worked beyond the 90% working ratio, Zr contained specimen showed intra-granule crack propagation but Zr-free specimen showed inter-granule mode. The tensile strength have maximum value in 0.05% Zr contained alloy. The aging mechanism of Cu-Ni-Mn-Sn-Al alloys were varied by Zr addition.

• Journal of Broadcast Engineering
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• v.19 no.3
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• pp.405-414
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• 2014

High Efficiency Video Coding(HEVC) obtains high compression ratio by applying recursive quad-tree structured coding unit(CU). However, this recursive quad-tree structure brings very high computational complexity to HEVC encoder. In this paper, we present fast CU decision algorithm in recursive quad-tree structure. The proposed algorithm estimates initial CU size before CTU encoding and checks the proposed condition using Coded Block Flag(CBF) and Rate-distortion cost to achieve the fast encoding time saving. And, intra mode estimation is also possible to be skipped using the CBF values acquired during the inter PU mode estimations. Experiment results shows that the proposed algorithm saved about 49.91% and 37.97% of encoding time according to the weighting condition.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.191.2-191.2
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• 2007

• Bulletin of the Korean Chemical Society
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• v.32 no.7
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• pp.2489-2492
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• 2011

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.114.1-114.1
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• 2008

• Transactions on Electrical and Electronic Materials
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• v.10 no.4
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• pp.135-139
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• 2009

$H_2S$ micro-gas sensors have been developed employing $SnO_2$:CuO composite thin films. The films were prepared by e-beam evaporation of Sn and Cu metals on silicon substrates, followed by oxidation at high temperatures. Results of various studies, such as scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) reveal that $SnO_2$ and CuO are mutually non-reactive. The CuO grains, which in turn reside in the inter-granular regions of $SnO_2$, inhibit grain growth of $SnO_2$ as well as forming a network of p-n junctions. The film showed more than a 90% relative resistance change when exposed to $H_2S$ gas at 1 ppm in air at an operating temperature of $350^{\circ}C$ and had a short response time of 8 sec.

• Journal of Biomedical Engineering Research
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• v.20 no.6
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• pp.539-546
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• 1999

현재 상용화되고 있는 치과용 76.5% Pd-11.2% Cu-7.2% GarP 합금의 왁스모형을 원심주조기로 주조하여, 임상조건의 탈개스 및 세라믹 소성처리를 하였다. 이에따른 각각의 시편에 대해 미세조직의 변화를 주사전자현미경 및 EDS로 관찰하고, 최종적인 투과전자현미경으로 조사하였다. 각 조건의 편석, 결정립계 및 석출물부위를 주사전자현미경과 EDS 고 관찰한 결과, 이원계 Pd-GA합금의 안정상들에 해당하는 정량적인 조성비는, 단지 상대적으로 Ga의 성분비만 높게 감지되었다. 특히, 세라믹소성 처리후 미세조직에서 형성된 석출물에 근접한 기지조직일수록 Ga의 농도가 상대적으로 줄어든 고갈현상을 확인하엿다. 또한 투과전자현미경의 제한시야회절도형 분석결과, 주조 및 탈개스처리 후 미세조직의 편석부위에서는 GA의 가장 큰 강도를 보였고, 또 Ga과 Pd 고용체 사이에 미세한 판상의 석출물에 기인하는 줄무늬를 관찰하였다. 한편, 세라믹소성처리후 미세조직의 석출물은 금속간화합물 Pd2Ga으로 밝혀졌으며, 기지조직은 <100> 방향을 따라 약 25nm의 폭을 가지는 미세한 섬유상 형태의 소위 "tweed 조직'을 형성하였다.성하였다.