• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.50-51
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• 2009

This paper presents integrated passive device (IPD) based on Wilkinson power divider. The simulated 2-way power divider has the insertion loss of 3.123 dB, output isolation of -24.576 dB, input return loss of 26.415 dB, and output return loss of 33.478 dB. The power divider is based on IPD process design simulation at 2.5 GHz for WiMAX (Worldwide Interoperability for Microwave Access) applications. The chip size of power divider is $1\;\times\;1.2\;mm^2$, which is under fabrication.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.406-407
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• 2009

In this paper, presents the Wilkinson power divider used integrated passive device (IPD) technology with excellent performance for personal communication services (PCS). The insertion loss of this power divider is 0.4 dB and the port isolation greater than 25 dB over the entire band. Return losses input and output ports are 18 dB and 19 dB, respectively. The power divider based on SI-GaAs substrate is designed within die size of about $0.775\times0.53\;mm^2$.

• Journal of electromagnetic engineering and science
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• 제9권1호
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• pp.32-37
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• 2009

Various Class-E CMOS power amplifiers for GSM applications are presented. A stage-convertible transformer for a dual mode power amplifier is proposed to increase efficiency in the low-output power region. An integrated passive device(IPD) process is used to reduce combiner losses. A split secondary 1:2 transformer with IPD process is designed to obtain efficient and symmetric power combining. A quasi-four-pair structure of CMOS PA is also proposed to overcome the complexities of power combining.

• 마이크로전자및패키징학회지
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• 제18권1호
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• pp.41-47
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• 2011

Currently, there is widespread adoption of silicon-based technologies for the implementation of radio frequency (RF) integrated passive devices (IPDs) because of their low-cost, small footprint and high performance. Also, the need for high speed data transmission and reception coupled with the ever increasing demand for mobility in consumer devices has generated a great interest in low cost devices with smaller form-factors. The UWB BPF makes use of lumped IPD technology on a silicon substrate CSMP (Chip Scale Module Package). In this paper, this filter shows 2.0 dB insertion loss and 15 dB return loss from 7.0 GHz to 9.0 GHz. To the best of our knowledge, the UWB band-pass-filter developed in this paper has the smallest size ($1.4\;mm{\times}1.2\;mm{\times}0.40\;mm$) while achieving equivalent electrical performance.

• 한국전자파학회논문지
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• 제16권8호
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• pp.783-789
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• 2005

본 논문은 glass 기판 위에 RE IPD(Integrated Passive Device) 기술을 이용하여 dual band 방향성 커플러의 새로운 설계와 구현을 하였으며, 이러한 구조는 전력 증폭기의 출력부에 closed loop 전력 제 어용 GSM/GPRS cellular phones에 적용할 수 있다. 커플러는 방향성 향상을 위하여 보상 capacitor를 이용하였으며, 상호 밴드의 간섭을 최소화하기 위하여 새로운 방법의 필터링 구조(diplexer)를 갖는 커플러를 구현하였다.

• 한국전자파학회논문지
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• 제19권11호
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• pp.1287-1293
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• 2008

4중 대역의 안테나 스위치 모듈을 개발하였다. 단말기의 front-end 단에서 LTCC 형태의 저역 통과 필터, 다이오드 및 수동 부품들로 구현되는 스위치 부분을 대신하여 수동 집적 회로와 트랜지스터 스위치로 집적화한 것이다. 필터의 수동 소자 및 정합 회로를 통합 구성하여 크기 면에서도 소형화가 가능하고, 가격 경쟁력에서도 우위를 점할 수 있다. 제안하는 안테나 스위치 모듈의 크기는 $5{\times}5\;mm$이고, 두께는 0.8 mm로 제작되었다. 각 대역의 삽입 손실은 평균적으로 1.0 dB이며, 반사 손실은 GSM/EGSM 대역에서 15.1 dB, DCS/PCS 대역에서 19 dB이다.

• 한국통신학회:학술대회논문집
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• 한국통신학회 2006년도 하계종합학술발표회 논문 초록집
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• pp.714-714
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• 2006

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.543-544
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• 2008

Nowadays, the research on the system integration using various technologies, like MCM-C, MCM-L and MCM-D. Especially, MCM-D technology is suitable for mmwave application due to its high resolution of patterning and thermal property similar to that of semiconductor devices. In this work, integrated passive devices like inductor, capacitor and resistor are evaluated on the GaAs substrate and their characteristics are examined. And finally, the Wilkinson power divider using lumped IPD are evaluated on GaAs substrate and it shows low insertion loss below 0.5 dB and the isolation over 15 dB.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.46-47
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• 2009

In this paper, a power combiner using IPD process for SK Telecom 3-Generation (2.13 ~ 2.15 GHz) application. The Integrated Passive Device (IPD) Wilkinson power Combiner shows compact size and high performance. It is simulated by 3D Electro Magnetic (EM) simulation because of more accurate measurement result wire-bonding effects. This combiner exhibit size of $1.2mm^2$ the insertion loss of 3.6 dB, and the return loss of 10.1 dB, and isolation of more than -7.7 dB.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.385-386
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• 2008

In this paper, a simple dual band filter chip is designed with 0603 case size using IPD technology. The dual-band filter achieves high frequency band at 2.5 GHz and low frequency band at 1.8 GHz. The insertion losses in high frequency band and low frequency band are -0.195 dB and -0.146 dB, respectively. The return losses in these bands are -22.7 dB and -22.8 dB, respectively. The simple dual-band filter based on SI-GaAs substrate is designed within die size of about 1.3 $mm^2$.