• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.562-563
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• 2005

In case of aged porcelain, the failure in basic performance tests happened in cool-heat tests. Based on this characteristic, we studied the method predicting failure phenomena through more severe accelerated cool-heat ageing and accelerating thermal mechanical performance tests. Test results indicated that the thermal stress by temperature gradient was more severe parameter than thermal stress by quenching cycles within a category of standard or accelerating methods. And there is no the deterioration of statistic strength, but the deterioration of strength according to accelerating tests is serious.

• Progress in Superconductivity and Cryogenics
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• v.8 no.2
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• pp.37-42
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• 2006

A research on several characteristics such as volume breakdown and surface discharge of insulators for a termination of power transmission class HTS cable was performed. We investigated the surface discharge of glass fiber reinforced plastic (GFRP) under air, cryogenic nitrogen gas and nitrogen gas media. The breakdown characteristics of these media were studied. Experimental results revealed that flashover voltage greatly depends on pressure, temperature, the kinds of insulating media and voltages, but it is slightly affected by shape and material of electrode. The breakdown voltage of liquid nitrogen, cryogenic nitrogen gas and nitrogen gas deeply depends on the shape and dimension of electrode, kinds of voltages and pressure. Moreover, the breakdown voltage of cryogenic nitrogen gas and flashover voltage of GFRP in the cryogenic nitrogen gas is also influenced by temperature and vapour-mist density of the gas.

• Progress in Superconductivity and Cryogenics
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• v.11 no.2
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• pp.29-32
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• 2009

The conduction cooling HTS SMES magnet is operated in cryogenic temperature. The insulation design at cryogenic temperature is an important element that should be established to accomplish miniaturization that is a big advantage of HTS SMES. However, the behaviors of insulators for cryogenic conditions in air or vacuum are virtually unknown. Therefore, we need active research and development of insulation concerning application of the conduction cooling HTS SMES. Specially, this paper was studied about high vacuum and cryogenic temperature breakdown and flashover discharge characteristics between cryocooler and magnet-coil. The breakdown and surface flashover discharge characteristics were experimented at cryogenic temperature and vacuum. Also, we were experimented about mechanical properties of 4-point bending test. From the results, we confirmed that about research between cryocooler and magnet-coil established basic data in the insulation design.

• East Asian mathematical journal
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• v.39 no.3
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• pp.349-354
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• 2023

The motivation in this paper comes from the recent results about Bell inequalities and topological insulators from group theory. Symmetries which are interested in group theory could be mainly used to find material structures. In this point of views, we study group extending by adding one relator which is easily called an equation. So a relative group extension by a adding relator is aspherical if the natural injection is one-to-one and the group ring has no zero divisor. One of concepts of asphericity means that a new group by a adding relator is well extended. Also, we consider that several equations and relative presentations over torsion-free groups are related to zero divisors.

• Journal of information and communication convergence engineering
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• v.22 no.3
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• pp.231-236
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• 2024

This paper presents a method used to identify partial discharge defects in cast-resin power transformers using a back-propagation algorithm. The Rogowski-type partial discharge (PD) sensor was designed with a planar and thin structure based on a printed circuit board to detect PD signals. PD electrode systems, such as metal protrusions, particle-on-insulators, delamination, and void defects, were fabricated to simulate the PD defects that occur in service. PD characteristics, such as rising time, falling time, pulse width, skewness, and kurtosis without phase-resolved partial discharge patterns, were extracted to intuitively analyze each PD pulse according to the type of PD defect. A backpropagation algorithm was designed to identify PD defects using a virtual instrument (VI) based on the LabVIEW program. The results show that the accuracy rate of back-propagation (BP) algorithm reaches over 92.75% in identifying four types of PD defects.

• Journal of Bio-Environment Control
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• v.18 no.4
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• pp.332-340
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• 2009

In this study, the thermal insulation effectiveness of the greenhouse insulators by the installation methods was investigated to find the right installation way of the insulation materials. Physical properties of the insulators such as thickness, air transmissivity, apparent density, ultraviolet rays cutoff ratio, reflectance, thermal conductivity, moisture absorptivity were evaluated and the insulation ability of the insulators were measured by the module experiments. For the same insulator, the insulation ability of the case with the outward direction of the black colored face, i.e., with the inward direction of the white colored face, was better than that of vice versa. The case of the black colored both surfaces was better than the case of the white colored both surfaces. For aluminium reflection material, the case with the outward direction of the lustre face, i.e., with the inward direction of the non-lustre face, was better than that of vice versa. For the same material with the inner thin polyethylene foam (or polyester) and the chemical wool, the case with the outward direction of the inner thin polyethylene foam (or polyester), i.e., with the inward chemical wool, was better than that of vice versa. Addition of the inner thin polyethylene foam increased the insulation effect very much.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.7
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• pp.3437-3443
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• 2013

The polymer insulators have been extensively used as an alternate material of ceramic insulators. However, when they are used in practical conditions, there are many problems of decreasing performance and shortening lifetime due to the exposures of degradation factors applied from the outdoor situations. Accordingly, the analysis of polymer degradations has been getting influential too late as one of important subjects for improvements of safety and reliability. Heat, water treatments are arbitrary simulated for finding out the initiations and processes of surface degradation on the polymer surface. Especially, this study is focused on the chemical changes properties. From the analysis of hydrophilic and hydrophobic molecular structures, final modeling of surface degradation is accomplished. We checked the contact angle depending on heat and moisturized accelerated degradation and ran an XPS analysis to check the mechanism change of the surface of the PCB polymer composite. The surface that had a tendency to attract moisture showed a decrease in the contact angle and generated a large amount of carboxyl($-COO^*$) radicals. The hydrophobized surface showed an increase in the contact angle and had a stable chemical composition constituted of the breakaway of oxygen radicals and the formation of double bond by carburization.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.2
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• pp.98-103
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• 2013

In this work, we investigated the enhanced performance of IZO-based TFTs with $HfSiO_x$ gate insulators. Four types of $HfSiO_x$ gate insulators using different diposition powers were deposited by co-sputtering $HfO_2$ and Si target. To simplify the processing sequences, all of the layers composing of TFTs were deposited by rf-magnetron sputtering method using patterned shadow-masks without any intentional heating of substrate and subsequent thermal annealing. The four different $HfSiO_x$ structural properties were investigated x-ray diffraction(XRD), atomic force microscopy(AFM) and also analyzed the electrical characteristics. There were some noticeable differences depending on the composition of the $HfO_2$ and Si combination. The TFT based on $HfSiO_x$ gate insulator with $HfO_2$(100W)-Si(100W) showed the best results with a field effect mobility of 2.0[$cm^2/V{\cdot}s$], a threshold voltage of -0.5[V], an on/off ratio of 5.89E+05 and RMS of 0.26[nm]. This show that the composition of the $HfO_2$ and Si is an important factor in an $HfSiO_x$ insulator. In addition, the effective bonding of $HfO_2$ and Si reduced the defects in the insulator bulk and also improved the interface quality between the channel and the gate insulator.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.37-42
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• 2006

The preparation and processing of PVP-gate insulators on the device performance have been studied in the fabrication of organic thin film transistors (OTFTs). One of polyvinyl series, poly-4-vinyl phenol(PVP) was used as a solute and propyleneglycol monomethyl etheracetate(PGMEA) as a solvent in the formation of organic gate solutions. The cross-linking of organic insulators was also attempted by adding the thermosetting material, poly (melamine-co-formaldehyde) as a hardener in the compounds. From the measurements of electrical insulating characteristics of metal-insulator-metal (MIM) samples, PVP-based insulating layers showed lower leakage current according to the increase of concentration of PVP and poly (melamine-co-formaldehyde) to PGMEA in the formation of organic solutions. The PVP(20 wt%) copolymer with composition of 20 wt% PVP to PGMEA and cross-linked PVPs in which 5 wt% and 10 wt% poly (melamine-co-formaldehyde) hardeners had been additional]y mixed into PVP(20 wt%) copolymers were used as gate dielectrics in the fabrication of OTFTs, respectively. In our experiments, the maximum field effect mobility of $0.31cm^2/Vs$ could be obtained in the 5 wt% cross-linked PVP(20 wt%) device and the highest on/off current ratio of $1.92{\times}10^5$ in the 10 wt% cross-linked PVP(20 wt%) device.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.80-88
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• 1995

This paper presents the fabrication of a metal-insulator-metal(MIM) antifuse structure consisting of insulators sandwiched between top electrode, Al, and bottom electrode, TiW and additionally studies on antifuse properties depending on the condition of insulator. The intermetallic insulators, prepared by means of sputter, comprised of silicon oxide and tantalum oxide. In such an antifuse structure, silicon oxide layer is utilized to decrease the leakage current and tantalum oxide layer, of which the dielectric strength is lower than that of silicon oxide, is also utilized to lower the breakdown voltage near 10V. Finally sufficient low leakage current, below 1nA, and low programming voltage, about 9V, could be obtained in antifuse device comprising $Al/Ta_{2}O_{5}(10nm)/SiO_{2}(10nm)/TiW$ structure and OFF resistance of 3$3.65M{\Omega}$ and ON resistance of $7.26{\Omega}$ could be also obtained. This $Ta_{2}O_{5}/SiO_{2}$ based antifuse structures will be promising for highly reliable programmable device.