• Journal of Bio-Environment Control
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• v.14 no.2
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• pp.95-105
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• 2005

This study was carried out to file up using effect and requirement of energy for environmental design data of Pleurotus eryngii growing houses. Heating and cooling Degree-Hour (D-H) were calculated and compared for. some Pleurotus eryngii growing houses of sandwich-panel (permanent) o. arch-roofed(simple) type structures modified and suggested through field survey and analysis. Also thermal resistance (R-value) was calculated for the heat insulating and covering materials of the permanent and simple-type, which were made of polyurethane or polystyrene panel and $7\~8$ layers heat conservation cover wall. The variations of heating and cooling D-H simulated for Jinju area was nearly linearly proportional to the setting inside temperatures. The variations of cooling D-H was much more sensitive than those of heating D-H. Therefore, it was expected that the variations of required energy in accordance with setting temperature or actual temperature maintained inside of the cultivation house could be estimated and also the estimated results of heating and cooling D-H could be effectively used far the verification of environmental simulation as well as for the calculation of required energy amounts. When the cultivation floor areas are all equal, panel type houses to be constructed by various combinations of materials were found to by far more effective than simple type pipe house in the aspect of energy conservation maintenance except some additional cost invested initially. And also the energy effectiveness of multi-span house compared to single span together with the prediction of energy requirement depending on the level insulated for the wall and roof area could be estimated. Additionally, structural as well as environmental optimizations are expected to be possible by calculating periodical and/or seasonal energy requirements for those various combinations of insulation level and different climate conditions, etc.

• Journal of Bio-Environment Control
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• v.28 no.3
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• pp.255-264
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• 2019

In this study, we conducted the hot box tests to compare the changes in thermal insulation for the four types of multi-layer thermal screens by the used period after collecting them from the greenhouses in the field when they were replaced at the end of their usage. The main materials for these four types of multi-layer thermal screens were matt georgette, non-woven fabrics, polyethylene (PE) foam, chemical cotton, etc. These materials were differently combined for each multi-layer thermal screen. We built specimens ($70{\times}70cm$) for each of these multi-layer thermal screens and measured the temperature descending rate, heat transmission coefficient, and thermal resistance for each specimen through the hot box tests. With regard to the material combinations of multi-layer thermal screens, thermal insulation can be increased by applying a multi-layered PE foam. However, it is considered that the multi-layered PE foam significantly less contributes to heat-retaining than chemical wool that forms an air-insulating layer inside multi-layer thermal screens. For the suitable heat-retaining performance of multi-layer thermal screens, basically, materials with the function of forming an air-insulating layer such as chemical cotton should be contained in multi-layer thermal screens. The temperature descending rate, heat transmission coefficient, and thermal resistance of multi-layer thermal screens were appropriately measured through the hot box tests designed in this study. However, in this study, we took into consideration only the four kinds of multi-layer thermal screens due to difficulties in collecting used multi-layer thermal screens. This is the results obtained with relatively few examples and it is the limit of this study. In the future, more cases should be investigated and supplemented through related research.

• Journal of Bio-Environment Control
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• v.30 no.4
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• pp.419-428
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• 2021

In order to develope a mobile-based greenhouse energy calculation program, firstly, the overall thermal transmittance of 10 types of major covers and 16 types of insulation materials were measured. In addition, to estimate the overall thermal transmittance when the cover and insulation materials were installed in double or triple layers, 24 combinations of double installations and 59 combinations of triple installations were measured using the hotbox. Also, the overall thermal transmittance value for a single material and the thermal resistance value were used to calculate the overall thermal transmittance value at the time of multi-layer installation of covering and insulating materials, and the linear regression equation was derived to correct the error with the measured values. As a result of developing the model for estimating thermal transmittance when installing multiple layers of coverings and insulating materials based on the value of overall thermal transmittance of a single-material, the model evaluation index was 0.90 (good when it is 0.5 or more), indicating that the estimated value was very close to the actual value. In addition, as a result of the on-site test, it was evaluated that the estimated heat saving rate was smaller than the actual value with a relative error of 2%. Based on these results, a mobile-based greenhouse energy calculation program was developed that was implemented as an HTML5 standard web-based mobile web application and was designed to work with various mobile device and PC browsers with N-Screen support. It had functions to provides the overall thermal transmittance(heating load coefficient) for each combination of greenhouse coverings and thermal insulation materials and to evaluate the energy consumption during a specific period of the target greenhouse. It was estimated that an energy-saving greenhouse design would be possible with the optimal selection of coverings and insulation materials according to the region and shape of the greenhouse.

• Journal of Magnetics
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• v.9 no.1
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• pp.17-22
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• 2004

We studied the magnetotransport properties of tunnel junctions with AlO and AlN barriers fabricated using microwave-excited plasma. The plasma nitridation process provided wider controllability than the plasma oxidization for the formation of MTJs with ultra-thin insulating layer, because of the slow nitriding rate of metal Al layers, comparing with the oxidizing rate of them. High tunnel magnetoresistance (TMR) ratios of 49 and 44% with respective resistance-area product $(R{\times}A) of 3 {\times} 10^4 and 6 {\times} 10^3 {\Omega}{\mu}m^2$ were obtained in the Co-Fe/Al-N/Co-Fe MTJs. We conclude that AlN is a hopeful barrier material to realize MTJs with high TMR ratio and low $R{\times}A$ for high performance MRAM cells. In addition, in order to clarify the annealing temperature dependence of TMR, the local transport properties were measured for Ta $50{\AA} /Cu 200 {\AA}/Ta 50 {\AA}/Ni_{76}Fe_{24} 20 {\AA}/Cu 50 {\AA}/Mn_{75}Ir_{25} 100 {\AA}/Co_{71}Fe_{29} 40 {\AA}/Al-O$ junction with $d_{Al}= 8 {\AA} and P_{O2}{\times}t_{0X}/ = 8.4 {\times} 10^4$ at various temperatures. The current histogram statistically calculated from the electrical current image was well in accord with the fitting result considering the Gaussian distribution and Fowler-Nordheim equation. After annealing at $340^{\circ}C$, where the TMR ratio of the corresponding MTJ had the maximum value of 44%, the average barrier height increased to 1.12 eV and its standard deviation decreased to 0.1 eV. The increase of TMR ratio after annealing could be well explained by the enhancement of the average barrier height and the reduction of its fluctuation.

• Journal of the Korean Applied Science and Technology
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• v.34 no.2
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• pp.260-270
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• 2017

Zirconia has white color and physical, chemical stability, also using in high temperature materials and various industrial structural ceramics such as heat insulating materials and refractories due to their low thermal conductivity, excellent strength, toughness, and corrosion resistance. If hydrophobically modified zirconia is introduced into a hydrophobic acrylate coating solution, the hardness, chemical, electrical, and optical properties will be improved due to the better dispersibility of inorganic particle in organic coating media. Thus, we introduced $-CH_3$ group through silylation reaction using either trimethylchlorosilane(TMCS) or hexamethyldisilazane(HMDZ) on zirconia surface. The $Si-CH_3$ peaks derived from TMCS and HMDZ on hydrophobically modified zirconia surface was confirmed by FT-IR ATR spectroscopy, and introduction of silicon was confirmed by FE-SEM/EDS and ICP-AES. In addition, the sedimentation rate result in acrylate monomer of the modified zirconia showed the improved dispersibility. Comparison of the sizes of a pristine and the modified zirconia particles, which were clearly measured not by the normal microscope but by particle size analysis, provided a pulverizing was occurred by physical force during the silylation process. From the BET analysis data, the specific surface area of zirconia was approximately $18m^2/g$ and did not significantly change during modification process.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.277-282
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• 2011

Negative temperature coefficient (NTC) materials have been widely studied for industrial applications, such as sensors and temperature compensation devices. NTC thermistor thick films of $Ni_{1+x}Mn_{2-x}O_{4+{\delta}}$ (x = 0.05, 0, -0.05) were fabricated on a glass substrate using the aerosol deposition method at room temperature. Resistance verse temperature (R-T) characteristics of the as-deposited films showed that the B constant ranged from 3900 to 4200 K between $25^{\circ}C$ and $85^{\circ}C$ without heat treatment. When the film was annealed at $600^{\circ}C$ 1h, the resistivity of the film gradually decreased due to crystallization and grain growth. The resistivity and the activation energy of films annealed at $600^{\circ}C$ for 1 h were 5.203, 5.95, and 4.772 $K{\Omega}{\cdot}cm$ and 351, 326, and 299 meV for $Ni_{0.95}Mn_{2.05}O_{4+{\delta}}$, $NiMn_2O_4$, and $Ni_{1.05}Mn_{1.95}O_{4+{\delta}}$, respectively. The annealing process induced insulating $Mn_2O_3$ in the Ni deficient $Ni_{0.95}Mn_{2.05}O_{4+{\delta}}$ composition resulting in large resistivity and activation energy. Meanwhile, excess Ni in $Ni_{1.05}Mn_{1.95}O_{4+{\delta}}$ suppressed the abnormal grain growth and changed $Mn^{3+}$ to $Mn^{4+}$, giving lower resistivity and activation energy.

• Fire Science and Engineering
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• v.31 no.6
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• pp.91-98
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• 2017

The present paper is a study on the tracking characteristics depending on accelerated degradation of PVC insulation material. In order to insulation degradation of PVC insulation material, the Arrhenius equation, a type of accelerated degradation test formula, was used to conduct accelerated degradation experiments with experiment samples prepared at the following age equivalents: 0, 10, 20, 30 and 40 years. Afterwards, a tracking experiment was conducted on the accelerated experiment samples as part of the KS C IEC 60112 criteria. When measuring the PVC tracking features according to the accelerated aging, the results showed that when 0.1% of ammonium chloride was added to the PVC insulating material, but no tracking occurred. However, depending on the age equivalent, The results of analyzing the current waveform and voltage waveform of the tracking propagation process showed the age equivalent from 0 years to 40 years displayed a break down in insulation resistance and even the BDB(before dielectric breakdown) sections did not maintain the same functionality of the original material. Based on a criterion of an age equivalent of 0 years, material with an age equivalent of 10 years posed a 1.4 times greater risk, material with an age equivalent of 20 years posed a 2 times greater risk, material with an age equivalent of 30 years posed a 4.6 times greater risk, and material with an age equivalent of 40 years posed a 7 times greater risk.

• Korean Journal of Materials Research
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• v.18 no.6
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• pp.339-346
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• 2008

Single-crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs (100) substrate at $450^{\circ}C$ with a hot wall epitaxy (HWE) system by evaporating a $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structures of the single-crystal thin films were investigated via the photoluminescence (PL) and Double-crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by Varshni's relationship, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T2/(T＋489K)$. After the as-grown $ZnIn_2S_4$ single-crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin-of-point defects of the $ZnIn_2S_4$ single-crystal thin films were investigated via the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained from the PL measurements were classified as donor or acceptor types. Additionally, it was concluded that a heat treatment in an S-atmosphere converted $ZnIn_2S_4$ single crystal thin films into optical p-type films. Moreover, it was confirmed that In in $ZnIn_2S_4$/GaAs did not form a native defects, as In in $ZnIn_2S_4$ single-crystal thin films existed in the form of stable bonds.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.239-246
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• 1999

A highly sensitive photovoltaic infrared photodiode was fabricated for detecting infrared light in $3{\sim}5\;{\mu}m$ wavelength range on InSb wafer with p-i-n structure grown by MOCVD. Silicon dioxide($SiO_2$) insulating films for the junction interface and surface of photodiode were prepared using RPCVD because InSb has low melting point and evaporation temperature. After formation of In ohmic contacts by thermal evaporation, the electrical properties of the photodiode were characterized in dark state at 77K. A product of zero-bias resistance and area($R_0A$) showed $1.56{\times}10^6\;{\Omega}{\cdot}cm^2$ that satisfied BLIP(background limited infrared photodetector) condition. When the photodiode was tested under infrared light, the normalized detectivity of about $10^{11}\;cm{\cdot}Hz^{1/2}{\cdot}W^{-1}$ was obtained. we successfully fabricated a unit cell with InSb IR array with good quantum efficiency and high detectivity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.3
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• pp.201-206
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• 2019

This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.