• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.10
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• pp.1467-1472
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• 2014

This paper study on powering characteristic on speed variation of propulsion system of prototype 8200 electric locomotive propulsion system through simulation modeling. For this purpose, it being applied in the field of railway IGBT (Insulated Gate Bipolar Transistor) elements are used. Converter was performed PLL (Phase-Locked Loop) control method that is used to control the phase and output voltage, and the inverter was carried an indirect vector control method to control the speed of traction motor. The results of simulation by modeling and experimental unit, we was confirmed that converter is controlled a unity power factor and output voltage by reference voltage. Also traction motor was controlled by indirect vector control and SVPWM inverter switching method very well.

• Proceedings of the KIEE Conference
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• 2004.11b
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• pp.63-65
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• 2004

The recent advancement in the power electronic technique has increased the use of induction motor fed by inverter using high-frequency switching devices. Also the tendency is toward larger size and higher voltage. Therefore, The IGBT (Insulated-Gate Bipolar Transistor) that is high switching frequency element has been using increase. But, The switching surge voltage was occurred by high switching frequency of inverter has appeared a voltage doubling in the motor input terminal due to mismatching of cable characteristic impedance and motor characteristic impedance. Actually, The Switching surge voltage became the major cause to occur the insulation failure by serious voltage stress in the stator winding of induction motor. The short during rise time of switching surge and cable length is increased, the maximum transient voltage seen at the motor terminals increases. In this paper, Analyzed switching surge transient voltage of power cable pulling is used EMTP(Electromagnetic Transient Program) at the induction motor terminal and in cable.

• Proceedings of the KIPE Conference
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• 2010.11a
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• pp.343-344
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• 2010

화석연료의 고갈로 인하여 친환경 자동차에 대한 연구와 상용화가 급속도로 진행되면서 점점 대형 차종으로 그 범위가 넓어지고 있다. 대형 차종에 적용되는 전기동력 시스템의 MCU(Motor Control Unit), GCU(Generator Control Unit), DC/DC 컨버터 등과 같은 전장품도 그 용량이 커지면서 상용화를 위해 효율적인 측면도 많이 부각되지만 스위칭 소자, 변압기, 초크, 다이오드 등에서 동작으로 인해 열이 발생하고 제품의 구조상 밀폐된 공간에 장착이 되기 때문에 발열로 인한 동작의 신뢰성과 제품의 내구성에 큰 영향을 미치게 된다. 그중 가장 발열이 심한 IGBT(Insulated Gate Bipolar Transistor) 등과 같은 스위칭 소자에서 발생하는 열을 효과적으로 냉각시키기 위해 수냉구조가 필수적이며 동일한 조건의 수압, 유량에 보다 높은 방열특성을 가지기 위해 냉각구조에 대한 해석이 제품을 개발 전에 선행되어야 한다. 본 논문에서는 유로의 냉각핀 형상과 유로 구조에 따라 방열특성이 어떠한 차이가 있는지 시뮬레이션 프로그램을 통하여 비교하고, 모사발열체를 이용한 방열부의 냉각 성능 시험과 다이나모 환경의 최대 출력 시험을 통하여 방열 특성을 확인하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.10
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• pp.2230-2236
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• 2012

Currently, the AC-to-DC power conversion system using diode rectifiers is mainly used in large vessels. Also, to reduce the total harmonic distortion(THD) of current and voltage, this system requires an additional phase-shifting transformer which can be powered multi-pulses. In this case, due to the installation of the transformer, the spatial or economic loss occurs. This paper presents a novel active rectification scheme using silicon controlled rectifier(SCR) or insulated gate bipolar transistor(IGBT) devices on behalf of the diode rectifiers which are currently operating in large vessels such as LNG Carrier(LNGC). The proposed system can use the low voltage source and reduce current and voltage harmonics generated by nonlinear loads connected to the power distribution bus and save economic costs by removing the phase-shifting transformers which are used in conventional system. Computer simulations are performed under the electric propulsion system which is operating in current large vessel. The results are shown in support of the improvement of THD included in the current and voltage wave forms of propulsion motor.

• The Transactions of the Korean Institute of Power Electronics
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• v.7 no.1
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• pp.81-90
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• 2002

This paper presents an Implementation of digital high-performance position sensorless control system of Reluctance Synchronous Motor(RSM) drives with Direct Torque Control(DTC). The system consists of stator flux observer, speed and torque estimator, two digital hysteresis controllers, an optimal switching look-up table, Insulated Gate Bipolar Transistor(IGBT) voltage source inverter, and TMS320C31 DSP board. The stator flux observer Is based on the combined voltage and current model with stator flux feedback adaptive control of which inputs are current and voltage sensed on motor terminal for wide speed range. In order to prove the suggested sensorless control algorithm for industrial field application, we have some simulation and actual experiment at low and high speed range. The developed high-performance speed control by fully digital system are shown a good response characteristic of control results and high performance features using 1.0[kW] RSM having 2.57 reluctance ratio of $L_d/L_q$.

• Journal of IKEEE
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• v.26 no.4
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• pp.671-680
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• 2022

In this paper, A 200kW traction motor driver that covers most of the traction motor specification of commercial electric vehicles (EV) is developed. In order to achieve high efficiency and high power density, a next-generation power semiconductors (Silicon carbide, SiC) are applied instead of power semiconductor(IGBT), which is Si based. Through hardware analysis for optimal use of SiC, expected efficiency and heat dissipation characteristics are obtained. A vector control algorithm for an IPMSM (Interior permanent magnet synchronous motor), which is mostly used in EV(Electric vehicle) traction motor, is implemented using DSP (Digital signal processor). In this paper, a prototype traction motor driver based SiC for EV is designed and manufactured, and its performance is verified through experiments.

• The Transactions of the Korean Institute of Power Electronics
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• v.22 no.4
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• pp.360-368
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• 2017

This paper proposes the 80-kW high-efficiency bidirectional hybrid SiC boost/buck converter using droop control for DC nano-grid. The proposed converter consists of four 20-kW modules to achieve fault tolerance, ease of thermal management, and reduced component stress. Each module is constructed as a cascaded structure of the two basic bi-directional converters, namely, interleaved boost and buck converters. A six-pack hybrid SiC intelligent power module (IPM) suitable for the proposed cascaded structure is adopted for high-efficiency and compactness. The proposed converter with hybrid switching method reduces the switching loss by minimizing switching of insulated gate bipolar transistor (IGBT). Each module control achieves smooth transfer from buck to boost operation and vice versa, since current controller switchover is not necessary. Furthermore, the proposed parallel control using DC droop with secondary control, enhances the current sharing accuracy while well regulating the DC bus voltage. A 20-kW prototype of the proposed converter has been developed and verified with experiments and indicates a 99.3% maximum efficiency and 98.8% rated efficiency.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.05a
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• pp.845-848
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• 2009

Power semiconductor devices are semiconductor devices used as switches or rectifiers in power electronics circuits. Theyare also caleed power devices or when used in integrated circuits, called power ICs. Some common power devices are the power diode, thyristor, power MOSFET and IGBT (insulated gate bipolar transistor). A power diode or MOSFET operates on similar principles to its low-power counterpart, but is able to carry a larger amount of current and typically is able to support a larger reverse-bias voltage in the off-state. Structural changes are often made in power devices to accommodate the higher current density, higher power dissipation and/or higher reverse breakdown voltage. The vast majority of the discrete (i.e non integrated) power devices are built using a vertical structure, whereas small-signal devices employ a lateral structure. With the vertical structure, the current rating of the device is proportional to its area, and the voltage blocking capability is achieved in the height of the die. With this structure, one of the connections of the device is located on the bottom of the semiconductor.

• Journal of the Korean Solar Energy Society
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• v.33 no.3
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• pp.27-35
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• 2013

One of the most important factors that have a large influence on performance of the solar water heater system is performance of the solar collector, more detailedly, coating technology on the surface of the solar collector, which can provide high solar absorptance and low emittance. The core of the coating technology is to coat solar selective surfaces. In this study, various performance experiments are carried out using $Cr_2(SO_4)_3{\cdot}15H_2O$ coating technology. Here, IGBT(Insulated Gate Bipolar Transistor) of 5000A-15V was used as the surface processing rectifier which can stably output power and also can control voltage and current. The plating solution mainly contains black chrome$^{+3}$ concentration, H-y Conductivity, N-u Complex, NF Additive and NC-2 Wetter. Before applying the black chrome coating on the copper plate, optimal conditions are provided by using various preprocessing methods such as removal of fat, activation, electrolytic polishing, nickel strike, copper sulfate plating and bright neckel plating, and then the automatic continuous coating experiment are performed according to plating time and cathode current density. In the experiment, after the removal of fat, chemical polishing, nickel strike and activation processes as the preprocessing methods, the black chrome coating was performed in a plate solution temperature of $28^{\circ}C$ and a cathode current density of $18A/cm^2$ for 90 seconds. The thickness of chrome and nickel on the coated plate is $0.389{\mu}m$, $159{\mu}m$ respectively. As a result of the coating experiment, it showed the most excellent performance having a high solar absorptance of 98% and a low emittance of $5{\pm}1%$ when the black chrome surface had a thickness of $0.398{\mu}m$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.3
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• pp.415-421
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• 2021

This study analyzed the effect on the cooling performance of the channel shape of a heat sink for an insulated gate bipolar transistor (IGBT). A serpentine channel was used for this analysis, and the parameter for the analysis was the number of curves. The analysis was conducted using computational fluid dynamics with the commercial software ANSYS fluent. One curve in the channel improved the heat dissipation performance of the heat sink by up to 8% compared to a straight-channel heat sink. However, two curves in the channel could not improve the heat discharge performance further. Instead, the two curves caused a higher pressure drop, which induces parasitic loss for the pumping of coolant. The pressure drop of the two-curve channel case was 2.48-2.55 times larger than that of a one-curve channel. This higher pressure drop decreased the heat discharge efficiency of the heat sink with two curves. The discharge heat per unit pressure drop was calculated, and the result of the straight heat sink was highest among the analyzed cases. This means that the heat discharge efficiency of the straight heat sink is the highest.