• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.120-124
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• 2000

In this paper, the effects of trap distribution on switching characteristis of a lateral insulated gate bipolar transistor (LIGBT) are investigated. The simulations are performed in order to to analyze the effect of the positon, width and concentration of trap distribution model with a reduced minority carrier lifetime using 2D device simulator MEDICI. The turn off time for the proposed LIGBT model A with the trap injection is 0.8$mutextrm{s}$. These results indicate the improvement of about 2 times compared with the conventional LIGBT. It is shown that the trap distribution model is very effective to reduce the turn-off time with a little increasing of on-state voltage drop.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 B
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• pp.858-860
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• 2003

This paper introduces the drive system for 500MVA short-circuit generator. Drive system is usually low-voltage, but this system is 2300V high-voltage using Insulated Gate Bipolar Transistor(IGBT). Drive system consists of switchgear, 18-pulse transformer, converter(source bridge), inverter(load bridge) and control rack. In this paper, It describes the function and construction of each part.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.156-158
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• 1994

In recent days, the various adjustable speed drives are widely employed at the industrial applications for the purpose of energy saving and speed control. In particular, for the machine control applications. the switching frequency is required to be increased for better dynamic performance of the drive. Moreover, this also leads to the reduction of the switching loss of the device. For IGBT (Insulated Gate Bipolar Transistor), the most widely used switching device in the inverters below the 100[kW] range, the falling and falling time is of the order about $200{\sim}300[ns]$. Therefore unexpected phenomena occurs such as voltage spikes due to high gradient of current at the switching instant, the weakening of motor insulation due to high gradient of voltage. In this paper, a new voltage gradient suppression technique is presented in both theoretically and experimentally.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.178-180
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• 1994

In recent days, the inverter is widely used at the industrial applications. In the range lower than 100[kW], IGBT(Insulated Gate Bipolar Transistor) is most widely used as the switching device. In that case of IGBT, the rising time and the filling time are very short(about $200[ns]{\sim}300[ns]$). Especially for motor control applications, the switching frequency is required to be increased for better dynamic performance of the drive. However, the higher switching frequency leads to the unexpected problem occurs such as voltage spike due to stray inductance in the bus at switching instant. In this paper, a new methodology for reducing the stray inductance existing in the bus that induces the voltage spike will be presented.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.405-408
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• 2004

In this work, Analytical model for voltage and current characteristics of NPT(Non-PunchThrough) IGBT(Insulated Gate Bipolar Transistor) was represented. voltage and current characteristics models were based on prediction on power loss of NPT IGBT during transient condition. For Analytical current model, excess carrier concentration and accumulated charge in active base width was analyzed with time variance. Analytical models were simulated by varying lifetime of excess minority carrier.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.163-166
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• 2003

The electrothermal simulation of high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for the modeling of the thermal behavior of silicon-on-insulator (SOI) devices. In this paper, using for SOI LIGBT, we simulated electrothermal for device that insulator layer with $SiO_2\;and\;Al_2O_3$ at before and after latch up to measured the thermal conductivity and temperature distribution of whole device and verified that SOI LIGBT with $Al_2O_3$ insulator had good thermal conductivity and reliability

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.147-148
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• 2005

As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The analysis provides valuable information on the semiconductor rating, long-term reliability and efficient heat-sink design. In this paper, thermal distribution of the Insulated Gate Bipolar Transistor Module has been studied with different conditions and heat sink materials. For analysis of thermal distribution, we obtained results by using finite element simulator, Ansys.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.172-173
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• 2007

As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The thermal analysis provides valuable information on the semiconductor rating, long-term reliability. In this paper, thermal distribution of the Non Punchthrough(NPT) Insulated Gate Bipolar Transistor has been studied. For analysis of thermal distribution, we obtained experimental and simulation results by using finite element simulator, Ansys and by using photographic infrared thermometer, we compared experimental date with simulation result. and got good agreement. Also this paper provided thermal distribution of IGBT connected to heat sinks. and this results will be good information to design optimal heat sink for IGBT.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.157.1-157.1
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• 2013

외부 Ballast Capacitor를 이용한 Voltage Doubler 전원장치를 이용하여 Micro size의 대기압 플라즈마를 발생장치를 개발하였다. 2개의 외부 Capacitor를 병렬로 연결하여 충전한 다음 외부 Capacitor를 직렬로 연결하여 전압을 2배압 시킨 상태에서 방전이 일어나도록 하였다. Capacitor의 충 방전 제어는 Switch Device인 Insulated Gate Bipolar Transistor (IGBT)를 사용하였다. 개발된 대기압 플라즈마는 외부 Capacitor와 인가전압을 독립적으로 변화시킬 수 있기 때문에 방전 시 전류 전압을 독립적으로 제어할 수 있으며 용도에 따라 Glow 방전에서 Arc 방전까지 제어가 가능하다. 본 연구에서는 900 V의 1.22 nF 외부 Capacitor 방전과 400 V의 10 nF 외부 Capacitor 방전을 비교하였다. 방전 시 전압파형과 전류파형은 서로 다르지만 소비된 방전에너지는 340 ${\mu}J$로 동일하다. ICCD camera와 Spectrometer를 이용하여 비교 분석을 실시하였다. 방전 image 및 Optical Emission Spectroscopy 분석을 이용하여 플라즈마의 온도, 밀도 등을 시간적, 공간적으로 분석하였다.

• Journal of Power Electronics
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• 제19권2호
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• pp.413-430
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• 2019

This paper presents an optimum hybrid SVPWM technique for three-level voltage source inverters (VSIs). The proposed hybrid SVPWM technique aims to minimize total harmonic distortion (THD). A new parameter is introduced to incorporate the heterogeneous nature of switching sequences of SVPWM technique. The proposed hybrid SVPWM technique is implemented on a low-cost PIC microcontroller (PIC18F452) and verified experimentally with a 2 KVA three-phase three-level insulated gate bipolar transistor-based VSI. Optimum switching sequence results in the three-level inverter configuration are demonstrated. The proposed hybrid SVPWM technique improves the THD performance by 17.3% compared with the best available three-level SVPWM technique.