• Transactions on Electrical and Electronic Materials
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• 제2권1호
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• pp.32-38
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• 2001

A new small sized Lateral Trench electrode Insulated Gate Bipolar Transistor(LTEIGBT) was proposed to improve the characteristics of conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire electrode of LTEIGBT was replace with trench-type electrode. The LTEIGBT was designed so that the width of device was no more than 19 ㎛. The Latch-up current densities of LIGBT, LTIGBT and the proposed LTEIGBT were 120A/㎠, 540A/㎠, and 1230A/㎠, respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p+ cathode layer underneath n+ cathode layer. The forward blocking voltage of the LTEIGBT is 130V. Conventional LIGBT and LTIGBT of the same size were no more than 60V and 100V, respectively. Because the the proposed device was constructed of trench-type electrodes, the electric field moved toward trench-oxide layer, and punch through breakdown of LTEIGBT is occurred, lately.

• International journal of advanced smart convergence
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• 제4권1호
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• pp.114-119
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• 2015

The different between two potential voltages can cause the electric field. The electric field is normally distributed along the radius of electrode, and hence it depends on the shape of electrodes. This paper analyses the distribution factor of electric field of symmetrical and asymmetrical concentric electrodes by using Finite Element technique. This allows an analysis the optimum safety clearance distance between two concentric electrodes. The symmetrical concentric electrode refers to Spherical-Spherical concentric electrodes and Cylindrical-Cylindrical concentric electrodes. It must be noted that the symmetrical electrodes are mostly applied for Gas Insulated Substation (GIS) equipments. The asymmetrical electrodes mention to Spherical (inner)-Cylindrical (outer) concentric electrodes and Cylindrical-Cube concentric electrodes, which present as the connection point of High Voltage (HV) cable. The simulations is also complies with the existing standards and regulations in order to ensure the accurate results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.338-341
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• 2002

A new small size Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19$\mu\textrm{m}$. The latch-up current density of the proposed LTEIGBT is improved by 10 and 2 times with those of the conventional LIGET and LTIGBT The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and LTIGBT are 60V and 100V, respectively. Because that the electrodes of the proposed device is formed of trench type, the electric field in the device are crowded to trench oxide. We fabricated He proposed LTEIGBT after the device and process simulation was finished. When the gate voltage is applied 12V, the forward conduction currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V,

• 한국전기전자재료학회논문지
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• 제15권9호
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• pp.758-763
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• 2002

A new small size Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19w. The latch-up current density of the proposed LTEIGBT is improved by 10 and 2 times with those of the conventional LIGBT and LTIGBT. The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and TIGBT are 60V and 100V, respectively. Because the electrodes of the proposed device is formed of trench type, the electric field in the device are crowded to trench oxide. When the gate voltage is applied 12V, the forward conduction currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 1997년도 추계학술발표회논문집
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• pp.67-69
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• 1997

Abstract - In this paper, the behaviour and effect of various particles made of conducting wires( Fe, Cu, Al ) in a SF6 insulated electrode system, are presented. It is shown that the ac breakdown voltage of compressed SF6 is influenced by different conducting particles. The breakdown voltage due to the particle is dependent of a class of particle. The breakdown voltage due to Cu particle was the highest and the breakdown voltage due to Al particle was the lowest.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2007년도 추계학술대회 논문집
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• pp.263-266
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• 2007

In this paper approves (AC and DC) high voltage by experimental GIS(Gas Insulated Switchgear) chamber and (AC and DC) power source to study breakdown characteristics by pressure(P) change and change of electrode distance(d) at (AC and DC) high voltage of Imitation I-Air, $N_2$ : $O_2$ = 79(%) : 21[%]) to alternate $SF_6$ and achieved research. Gave P change of I-Air to study I-Air's Dielectric Strength using uniform and non-uniform fields(sphere-sphere and Needle-Plane electrode) and studied relations dielectric strength($V_D$) by each P different d.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1473_1474
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• 2009

To develop electrically reliable high voltage apparatuses, the experimental study on the electrical breakdown field strength is needed, as well as theoretical approach. In this paper, lightning impulse breakdown characteristics considering utilization factors are investigated for the establishment of insulation design criteria of an high voltage apparatus. The utilization factors are represented as the ratio of mean electric field to maximum electric field. Dielectric experiments are performed by using five kinds of sphere-plane electrode systems made of stainless steel. As a result, it is found that dielectric characteristics are affected by not only gap length but also utilization factor of electrode systems. The results are expected to be applicable to the design of high voltage apparatuses.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2007년도 춘계학술대회 논문집
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• pp.385-388
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• 2007

In this paper approves AC high voltage by experimental GIS(Gas Insulated Switchgear) chamber and AC 300[kV] power source to study breakdown characteristics by pressure(P) change and change of electrode distance(d) at AC high voltage of Imitation Air(I-Air, $N_2$ : $O_2$ = 79[%] : 21[%]) to alternate $SF_6$ and achieved research. Gave P change of I-Air to study I-Air's breakdown characteristics using non-uniform fields(Needle--Plane electrode) and studied relations breakdown voltage ($V_B$) by each P different d.

• Journal of Electrical Engineering and information Science
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• 제2권3호
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• pp.77-81
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• 1997

In his work, the influence of wire type conducting particles on the insulation reliability of GIS has been systematically investigated when the epoxy resin based dielectric coating was made on he inner side of outer electrode. For this purpose, coaxial cylinder-type electrode was adopted in 362 kV chamber and various sizes of Cu conducting particle were used under different gas pressures. In order to elucidate the coating effect on the gas insulation, different thickness of dielectric coating has been considered and then the lift-off voltage and flashover voltages have been measured. The results shown that the dielectric coating has a remarkable influence by restraining the movement of particle in GIS system, and thus GIS insulation reliability is noticeably improved.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.267-270
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• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10$\mu\textrm{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sifted conventional LTIGBT and the conventional LTIGBT which has the width of 17$\mu\textrm{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17$\mu\textrm{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field in the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.