• 제목/요약/키워드: Input coupled

검색결과 503건 처리시간 0.04초

Dry Etching of Al2O3 Thin Films in O2/BCl3/Ar Inductively Coupled Plasma

  • Yang, Xeng;Woo, Jong-Chang;Um, Doo-Seung;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • 제11권5호
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    • pp.202-205
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    • 2010
  • In this study, the etch properties of $Al_2O_3$ thin films deposited by atomic layer deposition were investigated as a function of the $O_2$ content in $BCl_3$/Ar inductively coupled plasma. The experiments were performed by comparing the etch rates and selectivity of $Al_2O_3$ over the hard mask materials as functions of the input plasma parameters, such as the gas mixing ratio, DC-bias voltage, ratio-frequency (RF) power and process pressure. The highest obtained etch rate was 477 nm/min at an RF power of 700 W, $O_2$ to $BCl_3$/Ar gas ratio of 15%, DC-bias voltage of -100 V and process pressure of 15 mTorr. The deposition occurred on the surfaces when the amount of $O_2$ added to the $BCl_3$/Ar gas was too high at a low DC-bias voltage or high process pressure. X-ray photoelectron spectroscopy was used to investigate the chemical reactions on the etched surface.

방사형 동조 스터브를 갖는 전자기결합 광대역 마이크로스트립 안테나의 설계 (Design of the Electromagnetically Coupled Broadband Microstrip Antennas with Radial Tuning Stub)

  • 김정렬;윤현보
    • 한국전자파학회논문지
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    • 제7권1호
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    • pp.26-35
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    • 1996
  • 본 논문에서는 시간영역 유한차분법(FDTD)을 이용하여 동조 스터브가 삽입된 전자기결합 광대역 마이크로스트립 안테나의 특성을 해석하고 최대 대역폭올 갖는 안테나를 설계하였다. 전자기 결합 마 이크로스트립 안테나의 급전선로에 짧은 방사형 동조 스터브를 병 렬로 연결하면 광대 역 특성을 가지며, 방사형 동조 스터브의 반지름, 각도, 위치 동의 변화에 따라 안테나의 특성이 변한다. 시간영역에 서의 유한차분법에 의한 수치 해석 결과를 Fourier 변환하여, 주파수 영역에서 안테나 특성을 계산하 였다. 방사형 동조 스터브를 갖는 마이크로스트립 안테나의 최대 대역폭은 약 15%로서 장방형 동조 스터브 형태와 동일한 광대역 특성을 가지면서 동작 주파수 대역 내에서 전압 정재파의 리플이 양호 한 특성을 보여준다.

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개구면 결합 공진기 급전 마이크로스트립 패치 안테나의 회로망 해석 및 설계 (Network Analysis and Design of Aperture-Coupled Cavity-Fed Microstrip Patch Antenna)

  • 신종우;김정필
    • 대한전자공학회논문지TC
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    • 제41권12호
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    • pp.93-102
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    • 2004
  • 본 논문은 개구면 결합 공진기 급전 마이크로스트립 패치 안테나에 대하여 간결하면서도 정확한 등가회로 모델을 추출하기 위한 일반적인 전자기 이론을 제안하였다. 그리고 등가회로는 이상적인 트랜스, 어드미턴스, 그리고 전송선으로 구성된다. 관련소자들의 값은 복소전력 개념, Fourier 변환, Fourier 급수, 그리고 spectral-domain immittance-approach를 적용하여 계산된다. 본 논문에서는 이 방법을 이용하여 안테나의 입력 임피던스를 구하고, 기존 논문에서 발표된 계산값, 그리고 측정값들과 비교하였다. 기존의 연구 결과와의 정확한 일치는 본 논문이 제안한 등가회로 모델의 간결성과 정확성을 입증해 준다.

Ar 가스 압력과 RF 전력에 따른 유도결합형 플라즈마의 전기적 및 광학적 특성 (Electrical and Optical Characteristics of Inductively Coupled Plasma by Ar Gas Pressure and Rf Power)

  • 최용성;허인성;이영환;박대희
    • 한국전기전자재료학회논문지
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    • 제17권5호
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    • pp.560-566
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    • 2004
  • In this paper, the electrical and emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma (ICP) with the variation of argon gas pressure and RF power. The RF output was applied to the antenna in the range of 5∼50 W at 13.56 MHz. The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of -100V∼+100V. When the pressure of argon gas was increased, electric current was decreased. There was a significant electric current increase from 10 to 30 W. Also, when the RF power was increased, electron density was increased. Also, the emission spectrum, Ar- I lins, luminance were investigated. At this time, the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10∼60 mTorr, 10∼300 W, respectively. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.

Etch Properties of HfO2 Thin Films using CH4/Ar Inductively Coupled Plasma

  • Woo, Jong-Chang;Kim, Gwan-Ha;Kim, Dong-Pyo;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • 제8권6호
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    • pp.229-233
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    • 2007
  • In this study, we carried out an investigation of the etching characteristics(etch rate, selectivity) of $HfO_2$ thin films in the $CH_4/Ar$ inductively coupled plasma. It was found that variations of input power and negative dc-bias voltage are investigated by the monotonic changes of the $HfO_2$ etch rate as it generally expected from the corresponding variations of plasma parameters. At the same time, a change in either gas pressure or in gas mixing ratio result in non-monotonic etch rate that reaches a maximum at 2 Pa and for $CH_4(20%)/Ar(80%)$ gas mixture, respectively. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CH_4-containing$ plasmas.

고주파 유도결합 플라즈마의 전자에너지 분포함수 특성에 관한 연구 (A Study on the characteristics of Electron Energy Distribution function of the Radio-Frequency Inductively Coupled Plasma)

  • 황동원;하장호;전용우;최상태;이광식;박원주;이동인
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 1998년도 학술발표회논문집
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    • pp.131-133
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    • 1998
  • Electron temperature, electron density and electron energy distribution function were measured in Radio-Frequency Inductively Coupled Plasma(RFICP) using a probe method. Measurements were conducted in argon discharge for pressure from 10 mTorr to 40 mTorr and input rF power from 100W to 600W and flow rate from 3 sccm to 12 sccm. Spatial distribution of electron temperature, electron density and electron energy distribution function were measured for discharge with same aspect ratio (R/L=2). Electron temperature was found to depend on pressure, but only weakly on power. Electron density and electron energy distribution function strongly depended on both pressure and power. Electron density and electron energy distribution function increased with increasing flow rate. Radial distribution of the electron density and electron energy distribution function were peaked in the plasma center. Normal distribution of the electron density, electron energy distribution function were peaked in the center between quartz plate and substrate. These results were compared to a simple model of ICP, finally, we found out the generation mechanism of Radio-Frequency Inductively Coupled Plasma.

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Seismic performance evaluation of coupled core walls with concrete and steel coupling beams

  • Fortney, Patrick J.;Shahrooz, Bahram M.;Rassati, Gian A.
    • Steel and Composite Structures
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    • 제7권4호
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    • pp.279-301
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    • 2007
  • When coupling beams are proportioned appropriately in coupled core wall (CCW) systems, the input energy from ground motions is dissipated primarily through inelastic deformations in plastic hinge regions at the ends of the coupling beams. It is desirable that the plastic hinges form at the beam ends while the base wall piers remain elastic. The strength and stiffness of the coupling beams are, therefore, crucial if the desired global behavior of the CCW system is to be achieved. This paper presents the results of nonlinear response history analysis of two 20-story CCW buildings. Both buildings have the same geometric dimensions, and the components of the buildings are designed based on the equivalent lateral force procedure. However, one building is fitted with steel coupling beams while the other is fitted with diagonally reinforced concrete coupling beams. The force-deflection relationships of both beams are based on experimental data, while the moment-curvature and axial load-moment relationships of the wall piers are analytically generated from cross-sectional fiber analyses. Using the aforementioned beam and wall properties, nonlinear response history analyses are performed. Superiority of the steel coupling beams is demonstrated through detailed evaluations of local and global responses computed for a number of recorded and artificially generated ground motions.

낮은 전류-입력 임퍼던스를 갖는 A급 바이폴라 전류 콘베이어(CCII)와 그것의 오프셋 보상된 CCII 설계 (A Design of Class A Bipolar Current Conveyor(CCII) with Low Current-Input Impedance and Its Offset Compensated CCII)

  • 차형우
    • 대한전자공학회논문지SD
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    • 제38권10호
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    • pp.754-764
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    • 2001
  • 고정도 전류-모드 신호 처리를 위한 낮은 전류-입력 임피던스를 갖는 A급 바이폴라 제 2세대 전류 콘베이어(CCII)와 그것의 오프셋 보상된 CCII를 제안하였다. 제안한 CCII는 전류 입력을 위한 정류된 전류-셀, 전압 입력을 위한 이미터 폴로워, 그리고 전류 출력을 위한 전류 미러로 구성된다. 이 구성에서, 전류 입력단자의 임피던스를 줄이기 위해 두 입력 단은 전류 미러에 의해 결합되었다. 실험 결과, CCII의 전류 입력단자의 임피던스는 8.4 Ω 이하였고, 전류 입력 단자의 오프셋 전압은 40 mV로 나타났다. 이 오프셋을 줄이기 위하여 오프셋 보상된 CCII는 제안한 CCII의 회로 구성에 다이오드-결선된 npn과 pnp 트랜지스터를 첨가시켰다. 실험 결과, 오프셋 보상된 CCII의 전류 입력 단자의 임피던스는 2.1Ω이하였고, 전압 오프셋은 0.05mV로 나타났다. 제안한 두 CCII을 전압 폴로워로 사용할 때 3-dB 차단 주파수는 30 MHz이었다. 전력 소비는 6 mW이다.

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유한요소해석을 통한 전자기 성형장비 공정변수의 성형력에 미치는 영향 (Effect of Process Parameters in Electromagnetic Forming Apparatus on Forming Load by FEM)

  • 노학곤;박형규;송우진;강범수;김정
    • 한국정밀공학회지
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    • 제30권7호
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    • pp.733-740
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    • 2013
  • The high-velocity electromagnetic forming (EMF) process is based on the Lorentz force and the energy of the magnetic field. The advantages of EMF include improved formability, wrinkle reduction, and non-contact forming. In this study, numerical simulations were conducted to determine the practical parameters for the EMF process. A 2-D axis-symmetric electromagnetic model was used, based on a spiral-type forming coil. In the numerical simulation, an RLC circuit was coupled to the spiral coil to measure various design parameters, such as the system input current and the electromagnetic force. The simulation results show that even though the input peak current levels were at the same level in each case, the forming condition varied due to differences in the frequency of the input current. Thus, the electromagnetic forming force was affected by the input current frequency, which in turn, determined the magnitude of the current density and the magnetic flux density.

New Isolated Single-Phase AC-DC Converter for Universal Input Voltage

  • Lee, Ming-Rong;Yang, Lung-Sheng;Lin, Chia-Ching
    • Journal of Power Electronics
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    • 제13권4호
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    • pp.592-599
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    • 2013
  • This paper investigates a new isolated single-phase AC-DC converter, which integrates a modified AC-DC buck-boost converter with a DC-DC forward converter. The front semi-stage is operated in discontinuous conduction mode (DCM) to achieve an almost unity power factor and a low total harmonic distortion of the input current. The rear semi-stage is used for step-down voltage conversion and electrical isolation. The front semi-stage uses a coupled inductor with the same winding-turn in the primary and secondary sides, which is charged in series during the switch-on period and is discharged in parallel during the switch-off period. The discharging time can be shortened. In other words, the duty ratio can be extended. This semi-stage can be operated in a larger duty-ratio range than the conventional AC-DC buck-boost converter for DCM operation. Therefore, the proposed converter is suitable for universal input voltage (90~264 $V_{rms}$) and a wide output-power range. Moreover, the voltage stress on the DC-link capacitor is low. Finally, a prototype circuit is implemented to verify the performance of the proposed converter.