• Title/Summary/Keyword: Inorganic electroluminescence device

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Optical Properties of Graphene Doped ZnS:(Cu,Al) Inorganic Electroluminescence Devices by Screen Printing (Graphene을 첨가하여 스크린 프린팅으로 제작한 ZnS:Cu,Al 무기 전계발광 소자의 광특성)

  • Jo, Sung Ho;Lee, Sang Nam
    • Korean Journal of Optics and Photonics
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    • v.26 no.5
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    • pp.265-268
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    • 2015
  • An inorganic electroluminescence device based on a green ZnS:(Cu,Al) phosphor was fabricated by a screen printing method. Graphene was added to the phosphor layer to increase the electroluminescence intensity. As the graphene concentration increased, the photoluminescence intensity decreased; on the other hand, the electroluminescence intensity increased, up to 0.6 wt%.

Synthesis and characterization of orange-yellow phosphor for inorganic EL device

  • Chang, Mi-Youn;Lee, You-Hui;Han, Sang-Do;Khatkar, S.P.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1334-1337
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    • 2005
  • Orange-yellow phosphor has been synthesized by solid-state method for inorganic EL devices. Zinc sulfide is used as host material for the phosphor and the phosphor consists of copper and manganese as activators. The dependence of the photoluminescence (PL) and electroluminescence(EL) properties on the copper and manganese concentrations has been investigated.

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Effect of Microstructure of Quantum Dot Layer on Electroluminescent Properties of Quantum Dot Light Emitting Devices (양자점 층의 미세구조 형상이 양자점 LED 전계 발광 특성에 미치는 효과)

  • Yoon, Sung-Lyong;Jeon, Minhyon;Lee, Jeon-Kook
    • Korean Journal of Materials Research
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    • v.23 no.8
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    • pp.430-434
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    • 2013
  • Quantum dots(QDs) with their tunable luminescence properties are uniquely suited for use as lumophores in light emitting device. We investigate the microstructural effect on the electroluminescence(EL). Here we report the use of inorganic semiconductors as robust charge transport layers, and demonstrate devices with light emission. We chose mechanically smooth and compositionally amorphous films to prevent electrical shorts. We grew semiconducting oxide films with low free-carrier concentrations to minimize quenching of the QD EL. The hole transport layer(HTL) and electron transport layer(ETL) were chosen to have carrier concentrations and energy-band offsets similar to the QDs so that electron and hole injection into the QD layer was balanced. For the ETL and the HTL, we selected a 40-nm-thick $ZnSnO_x$ with a resistivity of $10{\Omega}{\cdot}cm$, which show bright and uniform emission at a 10 V applied bias. Light emitting uniformity was improved by reducing the rpm of QD spin coating.At a QD concentration of 15.0 mg/mL, we observed bright and uniform electroluminescence at a 12 V applied bias. The significant decrease in QD luminescence can be attributed to the non-uniform QD layers. This suggests that we should control the interface between QD layers and charge transport layers to improve the electroluminescence.

Present and trend of oxide phosphor thin film development for electroluminescent device applications

  • Miyata, Toshihiro;Minami, Tadatsugu
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1145-1148
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    • 2008
  • The present status and trend of oxide phosphor thin-film development for thin-film electroluminescent (TFEL) device application are presented in this paper. Recently, several newly developed types of bendable or bendable see-through oxide TFEL lamps have been fabricated using the TFEL technology with a newly developed bendable ceramic sheet, glass sheet or sapphire sheet substrate, which has become available on the market. Stable operation at high temperatures was obtained in double-insulating-layer-type TFEL lamps fabricated with a $Zn_2Si_{0.6}Ge_{0.}4O_4$:Mn thin-film emitting layer forming on translucent or transparent bendable sheet substrates.

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Effect of Cu concentration on the luminescence of ZnS:Cu,Cl blue-green phosphor

  • Cho, Tai-Yeon;Lee, Hak-Soo;Han, Sang-Do;Gwak, Ji-Hye;Shin, Dong-Hyuk;Han, Chi-Hwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1537-1538
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    • 2007
  • ZnS:Cu,Cl phosphor was synthesized by solid-liquid state reaction with two firing steps. Each stage of the process was carefully monitored so that the final product was comparable to commercially-available phosphor. The effect of $Cu^{2+}-doping$ concentration has been investigated on the luminescence characteristics of ZnS:Cu,Cl blue-green phosphors for inorganic electroluminescent device.

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$Cu^{2+}$-addition effect on luminescence of ZnS:Cu,Cl blue-green phosphors

  • Cho, Tae-Yeon;Park, Ja-Il;Han, Sang-Do;Gwak, Ji-Hye;Shin, Dong-Hyuk;Chun, Il-Su;Han, Chi-Hwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.576-577
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    • 2008
  • ZnS:Cu,Cl blue-green phosphors were prepared by conventional solid state reaction. Copper activator of different concentrations was doped into ZnS structure at two firing steps. The luminescence characteristics dependent on $Cu^{2+}$ doping concentration of the phosphors has been investigated for inorganic electroluminescent device.

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White Light Emission with Quantum Dots: A Review

  • Kim, Nam Hun;Jeong, Jaehak;Chae, Heeyeop
    • Applied Science and Convergence Technology
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    • v.25 no.1
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    • pp.1-6
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    • 2016
  • Quantum dots (QDs) are considered as excellent color conversion and self-emitting materials for display and lighting applications. In this article, various technologies which can be used to realize white light emission with QDs are discussed. QDs have good color purity with a narrow emission spectrum and tunable optical properties with size control capabilities. For white light emission with a color-conversion approach, QDs are combined with blue-emitting inorganic and organic light-emitting diodes (LED) to generate white emission with high energy conversion efficiency and a high color rendering index for various display and lighting applications. Various device structures for self-emitting white QD light-emitting diodes (QD-LED) are also reviewed. Various stacking and patterning technologies are discussed in relation to QD-LED devices.

On the route towards Si-based full color LED microdisplays for NTE applications

  • Smirnov, A.;Labunov, V.;Lazarouk, S.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.727-731
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    • 2005
  • Design and manufacturing process of a full color LED microdislay fabricated by standard CMOS technology and containing an array of aluminum / nanostructured porous silicon reverse biased light emitting Schottky diodes will be discussed. Being of a solid state construction, this microdisplays are cost-effective, thin and light in weight due to very simple device architecture. Its benefits include also super high resolution, wide viewing angles, fast response time and wide operating temperature range. The advantages of full integration of an LED-array and driving circuitry onto a Si-chip will be also discussed.

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Recent Progress in the Development of Small Organic Molecules for White Organic Light Emitting Devices

  • Raja, Inam ul Haq;Jung, Se-Jin;Lee, So-Ha
    • Journal of the Korean Applied Science and Technology
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    • v.25 no.1
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    • pp.91-106
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    • 2008
  • Development of white light emitting materials has been an interesting area for scientists and scientists have developed many organic, polymer and inorganic materials for white electroluminescent devices. Among them, single component small molecules gave best results in terms of efficiency, simplicity of device fabrication, and CIE values. Therefore, this review covers detailed discussion about syntheses of small compounds used in white organic light emitting devices until 2007.