• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.423-423
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• 2009

Currently, lasers are one of the most popular light sources in use for medical treatment. Many studies on low power lasers are being done in cell culture or through animal tests and most report different findings, making it difficult to verify their true effects. There are shifts in trends of studies from laser and LED that are expensive and generate heat problem to LED that are economically effective and safe. Its near infrared rays can penetrate deep into skin or muscle, up to 23 cm, without causing thermal damage or impairing neighboring tissues. This study verified the performance and effectiveness of an LED irradiator that was designed to emit similar wavelengths to that of a laser and thus could be used instead of a low level laser therapy in experiments on animals. And then, each experiment was performed to irradiation group and non-irradiation group for NTacSam:SD tissue cells. MIT assay method was chosen to verify the cell increase of two groups and the effect of irradiation on cell proliferation was examined by measuring 590nm transmittance of ELISA reader. As a result, the cell increase of NTacSam:SD tissue cells was verified in irradiation group as compared to non-irradiation group. The fact that specific wavelength irradiation has an effect on cell vitality and proliferation is known through this study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.330-330
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• 2009

For the high-performance Quantum dots-Light Emitting Diodes in the near-infrared and visible spectrum, adequate electro- and hole-transporting layers are required. The operation lifetimes of typical materials used in OLEDs are very limited and degraded especially by the oxygen and humid atmosphere. In this work, NiO was selected as a possible hole-transporting layer replacing the TPD film used in QD-LEDs. About 40-nm-thick NiO films have been deposited by the rf-sputtering method on various technical substrates such as FTO/glass, ITO/glass, and ITO/PEN. For the balance of charge carriers and quenching consideration, the resistivity of the deposited NiO films was investigated controlling the oxygen in the sputtering gas. NiO films were fabricated at room temperature and about 6mTorr using pure Ar, 2.5%-, 5%-, and 10%-mixed $O_2$ in Ar respectively. We also investigated the rf-power dependence on NiO films in the range of 80 ~ 200 Watts. The resistivity of the samples was varied from highly conductive to resistive state. Also discussed are the surface roughness of NiO films to provide the smooth surface for the deposition of QDs.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.5
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• pp.1026-1031
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• 2003

Automatic feed pumps are operated and stopped by a pressure switch. Thus, because of repeated operations and stops of the pumps according to fluctuations of water volume, operation with constant rate and pressure is impossible. Moreover, because of repeated running of the pump, keeping up of constant pressure is impossible and damage and energy loss are weak points of the pimps. To make up for defects of an automatic feed pump, this paper designed and made a static pressure feed system which was composed of a feed water control valve, a flow sensor and a control system. The valve device plays an important part in reducing load of pumps by constant water supply regardless of outflow of water. Outflow of water is determined by infrared diode of the flow sensor. The control system is made of a 8 bit micro-processor and the pump was controled by a specific control algorithm. With the constant pressure feed system, discharge pressure was kept at fixed pressure, accurate operations and stops were smoothly accomplished and the pump was operated with constant pressure. Thus, the constant pressure feed system can be considered as an advanced system which made up for the weak points in the current automatic feed systems.

• Journal of the Korean Ceramic Society
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• v.48 no.1
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• pp.63-68
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• 2011

The investigation is directed to lead free (Pb-free) frits that can be used for organic light emitting diode, plasma display screen devices and other sealing materials. $P_2O_5$-SnO system glasses have been prepared for Pb-free low temperature glass frit. Structure and properties of the glasses with the composition SnO-$xB_2O_3-(60-x)P_2O_5$ (x=0, 5, 10, 15, 20, 25, 30, 35, 40 mol%) were characterized by infrared spectra (IR), X-ray diffraction(XRD), Density, Molar volume, Thermo mechanical analysis(TMA) and weight loss after immersion test. Glass transition temperature($T_g$), dilatometric softening temperature($T_d$) and chemical durability increased, and coefficient of thermal expansion($\alpha$) decrease with the substitution of $B_2O_3$ for $P_2O_5$ in the range of 0~25 mol%.

• The Journal of Advanced Prosthodontics
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• v.7 no.5
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• pp.386-391
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• 2015

PURPOSE. The purpose of this preliminary study was to investigate the effects of adding 4,4'-bis(N,N-diethylamino) benzophenone (DEABP) as a co-initiator to a binary photoinitiating system (camphorquinone-amine) to analyze on the degree of conversion (DC) of a light-cured resin for dental 3D printing. MATERIALS AND METHODS. Cylindrical specimens (N=60, n=30 per group, ${\phi}5mm{\times}1mm$) were fabricated using bisphenol A glycerolate dimethacrylate (BisGMA) both with and without DEABP. The freshly mixed resins were exposed to light in a custom-made closed chamber with nine light-emitting diode lamps (wavelength: 405 nm; power: $840mW/cm^2$) for polymerization at each incidence of light-irradiation at 10, 30, 60, 180, and 300 seconds, while five specimens at a time were evaluated at each given irradiation point. Fourier-transform infrared (FTIR) spectroscopy was used to measure the DC values of the resins. Two-way analysis of variance and the Duncan post hoc test were used to analyze statistically significant differences between the groups and given times (${\alpha}$=.05). RESULTS. In the DEABP-containing resin, the DC values were significantly higher at all points in time (P<.001), and also the initial polymerization velocity was faster than in the DEABP-free resin. CONCLUSION. The addition of DEABP significantly enhanced the DC values and, thus, could potentially become an efficient photoinitiator when combined with a camphorquinone-amine system and may be utilized as a more advanced photopolymerization system for dental 3D printing.

• Restorative Dentistry and Endodontics
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• v.39 no.3
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• pp.155-163
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• 2014

Objectives: Light-curing of resin-based materials (RBMs) increases the pulp chamber temperature, with detrimental effects on the vital pulp. This in vitro study compared the temperature rise under demineralized human tooth dentin during light-curing and the degrees of conversion (DCs) of three different RBMs using quartz tungsten halogen (QTH) and light-emitting diode (LED) units (LCUs). Materials and Methods: Demineralized and non-demineralized dentin disks were prepared from 120 extracted human mandibular molars. The temperature rise under the dentin disks (n = 12) during the light-curing of three RBMs, i.e. an Ormocer-based composite resin (Ceram. X, Dentsply DeTrey), a low-shrinkage silorane-based composite (Filtek P90, 3M ESPE), and a giomer (Beautifil II, Shofu GmbH), was measured with a K-type thermocouple wire. The DCs of the materials were investigated using Fourier transform infrared spectroscopy. Results: The temperature rise under the demineralized dentin disks was higher than that under the non-demineralized dentin disks during the polymerization of all restorative materials (p < 0.05). Filtek P90 induced higher temperature rise during polymerization than Ceram.X and Beautifil II under demineralized dentin (p < 0.05). The temperature rise under demineralized dentin during Filtek P90 polymerization exceeded the threshold value ($5.5^{\circ}C$), with no significant differences between the DCs of the test materials (p > 0.05). Conclusions: Although there were no significant differences in the DCs, the temperature rise under demineralized dentin disks for the silorane-based composite was higher than that for dimethacrylate-based restorative materials, particularly with QTH LCU.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.187-187
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• 2013

양자점(Quuantum dot, QD)은 0차원 특성을 가지는 구조로 양자 구속 효과로 인하여 bulk와 는 다른 구조적, 광학적, 전기적 특성을 가지고 있다. InAs QD는 size와 barrier의 bandgap 조절을 이용하여 쉽게 bandgap을 바꿀 수 있는 장점이 있어 solar cell, semiconductor laser diode, infrared photodetector 등으로 많은 연구가 이루어지고 있다. 일반적으로 Stranski-Krastanov (SK) mode로 성장한 InAs QD는 보통 GaAs epilayer와의 lattice mismatch (7%)를 이용하여 성장을 하고 이로 인하여 strain을 가지고 있고 QD의 density와 stack이 높을수록 strain이 커진다. 하지만 sub-monolayer (SML) QD 같은 경우 wetting layer가 생기는 지점인 1.7 ML이하에서 성장되는 성장 방식으로 SK-QD보다는 작은 strain을 가지게 된다. 또 QD의 size가 작아 SK-QD보다 큰 bandgap을 가지고 있다. 본 연구에서는 분자선 에피택시(molecular beam epitaxy, MBE)를 이용하여 semi-insulating GaAs substrate 위에 InAs QD를 0.5/1/1.5/1.7/2/2.5 monolayer로 성장을 하였다. GaAs과 InAs의 성장온도와 성장속도는 각각 $590^{\circ}C$, 0.8 ML/s와 $480^{\circ}C$, 0.2 ML/s로 성장을 하였으며 적층사이의 interruption 시간은 10초로 고정하였고 10주기를 성장하였다. Photoluminescence (PL)측정 결과 SML-QD는 size에 따라서 energy가 1.328에서 1.314 eV로 약간 red shift를 하였고 SK-QD의 경우 1.2 eV의 energy정도로 0.1 eV이상 red shift 하였다. 이는 QD size에 의하여 energy shift가 있다고 사료된다. 또 wetting layer의 경우 1.41 eV의 energy를 가지는 것으로 확인 하였다. SML-QD는 SK-QD 보다 반치폭(full width at half maximum, FWHM)이 작은 것은 확인을 하였고 strain field의 감소로 해석된다. 하지만 SML-QD의 경우 SK-QD보다 상대적으로 작은 PL intensity를 가지고 있었다. 이를 개선하기 위해서는 보다 높은 QD density를 요구하게 되는데 growth temperature, V/III ratio, growth rate 등을 변화주어서 연구할 계획이다.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.5
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• pp.555-560
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• 2014

In order to improve spectrum sensitivity of photodiode for detection of the laser wavelength at 850 nm ~ 1000 nm of near-infrared band, this study has produced silicon-based photodiode whose area is $5000{\mu}m{\times}2000{\mu}m$, and the thickness is $280{\mu}m$. It was packed by the TO-5 type. The electrical properties of the dark currents have valued of approximately 0.1 nA for 5 V reverse bias, while the capacitance showed 32.5 pF at frequency range of 1 kHz and about 32.4 pF at the range of 200 kHz for 0 V. In addition, the rising time of output signal was as fast response as 20.92 ns for 10V. For the optical properties, the best spectrum sensitivity was 0.57 A/W for 890 nm, while it was relatively excellent value of 0.37 A/W for 1,000 nm. Over all, there were good spectrum sensitivity for this diode over the range of 870 ~ 920 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

• Journal of IKEEE
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• v.23 no.3
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• pp.947-953
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• 2019

The purpose of this paper is to explore an ASIC design for estimating sizes and concentrations of airborne micro-particles by the means of integrating, amplifying and digitizing electric charge signals generated by photo-sensors as it receives scattered photons by the presence of micro-particles, consisting of a pre-amplifier that detects and amplifies voltage or current signal from photo-sensor that generates charges (hole-electron pairs) when exposed to visible rays, infrared rays, ultraviolet rays, etc. according to the intensity of rays; a shaper for shaping the amplified signal to a semi-gaussian waveform; two discriminators and binary counters for outputting digital signals by comparing the magnitude of the shaped signal with an arbitrary reference voltages. The ASIC with the proposed architecture and functional blocks in this study was designed with a 0.18um standard CMOS technology from Global Foundries and the operation and performances of the ASIC has been verified by the silicons fabricated by using the process.