• 대한안전경영과학회지
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• 제17권4호
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• pp.297-304
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• 2015

This study concerns the integrated gas sensor system of wire and wireless communication by using IoT(Internet of Things) technology. First, communication part is that it delivers the detection information, which transferred by wire or wireless communication and required control procedure based on a wireless module that receives the gas leakage information from wired or wireless detector, to administrator or user's terminal. Second, receiver part is that it shows the location and information, which received from the wired detector formed by a detecting sensor's node as linking with the communication part, and transfers these to the communication part. Third, wireless detector formed as a communication module of a detecting sensor node is that it detects gas leakage and transfers the information through wireless as a packet.Fourth, wired detector communicated with the receiver part and formed as a communication module of a detecting sensor node is that it detects gas leakage, transfers and shows the information as a packet. Fifth, administrator's terminal is that it receives gas leakage information by the communication part, transfers the signal by remote-control, and shut off a gas valve as responding the information. Sixth, database is that it is connected with the communication part; it sets and stores the default values for detecting smoke, CO., and temperature; it transfers this information to the communication part or sends a gas detecting signal to user's terminal. Seventh, user's terminal is that it receives each location's default value which stored and set at the database; it manages emergency situation as shutting off a gas valve through remote control by corresponding each location's gas leakage information, which transferred from the detector to the communication part by wireless.It is possible to process a high quality data regarding flammable or toxic gas by transferring the data, which measured by a sensor module of detector, to the communication part through wire and wireless. And, it allows a user to find the location by a smart phone where gas leaks. Eventually, it minimizes human life or property loss by having stability on gas leakage as well as corresponding each location's information quickly.

• 한국정보통신학회논문지
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• 제26권7호
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• pp.963-971
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• 2022

상수도 관망은 국가 수도 시설의 주요한 구성 요소이지만 대부분이 지중에 매립되어 있어 배관의 노후화 정도 및 누수를 파악하기 어려우므로 유지관리 하기가 매우 어렵다. 본 연구에서는 관망에 설치된 다양한 센서 조합을 가정하여, 데이터 조합에 따른 관로 누수 판별 가능성을 검토하기 위하여 선형회귀분석, 뉴로퍼지 등의 인공지능 알고리즘을 통한 유량과 압력 예측을 실시하여 최적 알고리즘을 도출하였다. 공급압력 예측을 통한 누수판별의 경우 뉴로퍼지 알고리즘이 선형회귀분석에 비하여 우수하였다. 누수유량 예측에서는 뉴로퍼지를 이용한 유량예측이 우선 고려되어야 한다. 다만, 유량을 모사하기 힘든 경우에는 선형 알고리즘을 이용한 공급압력 예측이 이루어져야 할 것으로 사료 된다.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제10권7호
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• pp.3301-3318
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• 2016

Online social networks (OSNs) have changed the way people communicate with each other. An OSN usually encourages the participants to provide personal information such as real names, birthdays and educational background to look for and establish friendships among them. Some users are unwilling to reveal personal information on their personal pages due to potential privacy concerns, but their friends may inadvertently reveal that. In this work, we investigate the possibility of leaking personal information on Facebook in an unintentional and involuntary manner. The revealed information may be useful to malicious users for social engineering and spear phishing. We design the inference methods to find birthdays and educational background of Facebook users based on the interactions among friends on Facebook pages and groups, and also leverage J-measure to find the inference rules. The inference improves the finding rate of birthdays from 71.2% to 87.0% with the accuracy of 92.0%, and that of educational background from 75.2% to 91.7% with the accuracy of 86.3%. We also suggest the sanitization strategies to avoid the private information leakage.

• 한국통신학회논문지
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• 제41권9호
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• pp.1108-1119
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• 2016

본 논문에서는 스마트폰의 저주파 대역 누설 전자파가 미치는 악영향을 분석하기 위해 스마트폰 모델별로 기본 동작에 따라 누설되는 30 MHz 이하의 누설 전자파 신호의 스펙트럼 특성 및 방사 패턴을 분석하였다. 사용자와의 직접적인 인터페이스를 담당하는 스마트폰의 입출력 센서 모듈(터치스크린, 카메라, 마이크 및 스피커 모듈)을 활성화시키는 4가지 기본 동작 모드에 의해 누설되는 전자파 신호를 상용 Near-Field 마그네틱 프로브를 통해 1cm의 격자 간격으로 정밀하게 측정하였다. 측정된 누설 전자파 신호를 분석한 결과, 스마트폰의 모델 및 동작 모드별로 누설되는 저주파 대역 전자파는 특이한 피크(Peak) 또는 하모닉(Harmonic) 피크 성분을 보이며, 동작 모드에 따라 각각의 입출력 센서 모듈이 활성화될 경우 해당 센서 모듈 및 메인보드 상의 AP(Application Processor), 메모리 주위로 상대적으로 강한 저주파 대역의 전자파가 누설되는 것을 확인할 수 있었다.

• 정보보호학회논문지
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• 제26권3호
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• pp.735-744
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• 2016

최근 모바일 서비스 증가와 함께 다양한 개인정보 유출사고가 증가하고 있다. 개인정보 유출사고는 개인의 모바일 뱅킹 서비스 이용에 중요한 영향을 미친다. 이에 따라 본 연구에서는 다양한 개인정보 유출사고 인지가 모바일 뱅킹 이용자의 심리와 행동에 미치는 영향관계를 살펴보았다. 본 연구에서는 모바일 뱅킹 이용자의 심리와 행동 이해를 위해 인간의 심리와 행동을 설명해주는 대인행동이론과 외부 자극에 대한 반응 결과를 설명해주는 자극반응이론을 활용하였다. 본 연구자들은 모바일 뱅킹 이용자들을 대상으로 온라인을 통해 설문조사를 수행하였고, 구조방정식 모델을 통해 인과관계를 분석하였다. 본 연구결과는 모바일 뱅킹 서비스를 제공하는 금융기관에서 개인정보보호 관련 준수의도와 준수행동을 강화하는데 유용하게 활용될 것이다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.343-346
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• 2004

This paper proposes a leakage-suppressed SRAM with dynamic power saying scheme for the future leakage-dominant sub-70-nm technology. By dynamically controlling the common source-line voltage ($V_{SL}$) of sleep cells, the sub-threshold leakage through these sleep cells can be reduced to be 1/10-1/100 due to the reverse body-bias effect, dram-induced barrier lowering (DIBL) and negative $V_{GS}$ effects. Moreover, the bit-ling leakage which mar introduce a fault during the read operation can be completely eliminated in this new SRAM. The dynamic $V_{SL}$ control can also reduce the bit-line swing during the write so that the dynamic power in write can be reduced. This new SRAM was fabricated in 0.35-${\mu}m$ CMOS process and more than $30\%$ of dynamic power saying is experimentally verified in the measurement. The leakage suppression scheme is expected to be able to reduce more than $90\%$ of total SRAM power in the future leakage-dominant 70-nm process.

• 융합보안논문지
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• 제8권4호
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• pp.1-8
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• 2008

최근 해킹 기법들은 기존보다 정교한 기술을 바탕으로 악성화 되어 그 피해 규모가 증가하고 있으며, 인터넷 사용자의 확대와 맞물려 그 위력은 커지고 있다. 특히 정보유출을 목적으로 제작한 해킹메일에 첨부된 악성코드의 피해가 급증하고 있다. 본 논문에서 이러한 정보유출형 악성코드를 효과적으로 분석, 탐지할 수 있는 기술에 관하여 연구한다. 또한 본 연구에서는 기존 악성코드의 탐지규칙과 해킹메일 악성코드 탐지규칙을 비교하였으며 이를 통해 해킹메일 악성코드 뿐 아니라 새로운 악성코드와 변종들에 대해서도 탐지할 수 있는 기술에 대해 설명한다.

• Journal of Power Electronics
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• 제17권4호
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• pp.905-913
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• 2017

To enhance the zero-voltage switching (ZVS) range and power density of the phase-shift full-bridge (PSFB) ZVS converters used in geophysical exploration, an additional resonant inductor is used as a leakage inductance and a blocking capacitor which is equivalent to interlayer capacitance is integrated into a novel integrated inductor-capacitor-transformer (L-C-T). The leakage inductance and equivalent interlayer capacitance of the novel integrated L-C-T are difficult to determine by conventional methods. To address this issue, this paper presents accurate and efficient methods to compute the leakage inductance and equivalent interlayer capacitance. Moreover, the accuracy of this methodology, which is based on electromagnetic energy and Lebedev's method, is verified by an experimental analysis and a finite element analysis (FEA). Taking the problems of the novel integrated L-C-T into consideration, the losses of the integrated L-C-T are analyzed and the temperature rise of the integrated L-C-T is determined by FEA. Finally, a PSFB ZVS converter prototype with the novel integrated L-C-T is designed and tested.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 학술대회지
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• pp.460-462
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• 2004

The control of the data retention time is a main issue for realizing future high density dynamic random access memory. There are several leakage current mechanisms in which the stored data disappears. The mechanisms of data disappear is as follow, 1 )Junction leakage current between the junction, 2) Junction leakage current from the capacitor node contact, 3)Sub-threshold leakage current if the transfer transistor is affected by gate etch damage etc. In this paper we showed the plasma edge damage effect to find out data retention time effectiveness. First we measured the transistor characteristics of forward and reverse bias. And junction leakage characteristics are measured with/without plasma damage by HP4145. Finally, we showed the comparison TRET with etch damage, damage_cure_RTP and hydrogen_treatment. As a result, hydrogen_treatment is superior than any other method in a curing plasma etch damage side.

• 한국전기전자재료학회논문지
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• 제29권10호
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• pp.595-600
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• 2016

In this paper, the oxide currents of thin silicon oxides is investigated. The oxide currents associated with the on time of applied voltage were used to measure the distribution of voltage stress induced traps in thin silicon oxide films. The stress induced leakage currents were due to the charging and discharging of traps generated by stress voltage in the silicon oxides. The stress induced leakage current will affect data retention in memory devices. The oxide current for the thickness dependence of stress current and stress induced leakage currents has been measured in oxides with thicknesses between $109{\AA}$, $190{\AA}$, $387{\AA}$, and $818{\AA}$ which have the gate area $10^{-3}cm^2$. The oxide currents will affect data retention and the stress current, stress induced leakage current is used to estimate to fundamental limitations on oxide thicknesses.