• International Journal of Computer Science & Network Security
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• v.24 no.9
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• pp.85-92
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• 2024

Information Security is the foremost concern for IoT (Internet of things) devices and applications. Since the advent of IoT, its applications and devices have experienced an exponential increase in numerous applications which are utilized. Nowadays we people are becoming smart because we started using smart devices like a smartwatch, smart TV, smart home appliances. These devices are part of the IoT devices. The IoT device differs widely in capacity storage, size, computational power, and supply of energy. With the rapid increase of IoT devices in different IoT fields, information security, and privacy are not addressed well. Most IoT devices having constraints in computational and operational capabilities are a threat to security and privacy, also prone to cyber-attacks. This study presents a CIA triad-based information security implementation for the four-layer architecture of the IoT devices. An overview of layer-wise threats to the IoT devices and finally suggest CIA triad-based security techniques for securing the IoT devices..Make sure that the abstract is written as one paragraph.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1348-1351
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• 2007

We demonstrated that the threshold voltage shift owing to a gate-bias stress is originated from the trapped charges at the interface between semiconductor layer and dielectric layer, and such drawback can be settled by applying long-term delay time to the gate electrode.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1464-1466
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• 2007

We demonstrate p-doped organic light emitting diodes (OLEDs) comprising tungsten oxide ($WO_3$) and 1,4-bis[N-(1-naphthyl)-N'-phenylamino]-4,4' diamine (NPB). We propose the NPB : $WO_3$ composition functions as a p-doping layer which significantly improves hole injection that leads to the fabrication of 4-(dicyano-methylene)-2-methyl-6-(p-dimethylaminos tyryl)-4H-pyrane (DCMl) based p-doped OLEDs with high efficiency and long lifetime.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.959-962
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• 2003

This study is the effect of lithium Lithium Complex as an electron injection layer(EIL) on the performance of organic light emitting devices (OLEDs) and optimized the device efficiency by varying thickness of EIL layer. The device with 2nm GDI 101 layer showed significant enhancement of the device performance and device lifetime. We also compared GDI 109 and GDI 117 with GDI 101 as an electron injection layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1470-1473
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• 2007

We have demonstrated the optimization of white organic light-emitting diodes with two separated emissive layers using a blue fluorescent and a red phosphorescent dopant. The maximum luminous efficiency of the devices showed 7.93, 9.70, 11.8, and 14.3 cd/A. The $CIE_{xy}$ coordinates also showed (x = 0.33, y = 0.36), (x = 0.33, y = 0.35), (x =0.31, y = 0.35), and (x = 0.29, y = 0.36) at 6V, respectively.

• Transactions on Electrical and Electronic Materials
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• v.6 no.4
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• pp.154-158
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• 2005

Organic molecules have many properties that make them attractive for electronic applications. We have been examining the progress of memory cell by using molecular-scale switch to give an example of the application using both nano scale components and Si-technology. In this study, molecular electronic devices were fabricated with amino style derivatives as redox-active component. This molecule is amphiphilic to allow monolayer formation by the Langmuir-Blodgett (LB) method and then this LB monolayer is inserted between two metal electrodes. According to the current-voltage (I-V) characteristics, it was found that the devices show remarkable hysteresis behavior and can be used as memory devices at ambient conditions, when aluminum oxide layer was existed on bottom electrode. The diode-like characteristics were measured only, when Pt layer was existed as bottom electrode. It was also found that this metal layer interacts with organic molecules and acts as a protecting layer, when thin Ti layer was inserted between the organic molecular layer and Al top electrode. These electrical properties of the devices may be applicable to active components for the memory and/or logic gates in the future.

• International Journal of Computer Science & Network Security
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• v.21 no.4
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• pp.249-254
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• 2021

Our society is depending on mobile devices that play a major role in our lives. Utilizing these devices is possible due to their speed power and efficiency in performing basic as well as sophisticated operations that can be found in traditional computers like desktop workstations. The challenge with using mobile devices is that organizations are concerned with the interference between personal and corporate use due to Bring Your Own Device (BYOD) trend. This paper highlights the importance of mobile devices in our daily tasks and the associated risks involved with using these devices. Several technologies and countermeasures are reviewed in this paper to secure the mobile devices from different attempts of attacks. It is important to mention that this paper focuses on technical measures rather than considering different aspects of security measures as recommended by the cybersecurity community.

• Journal of Information Processing Systems
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• v.18 no.4
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• pp.489-499
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• 2022

Recently, the number of Internet of Things (IoT) devices has been increasing exponentially. These IoT devices are directly connected to the internet to exchange information. IoT devices are becoming smaller and lighter. However, security measures are not taken in a timely manner compared to the security vulnerabilities of IoT devices. This is often the case when the security patches cannot be applied to the device because the security patches are not adequately applied or there is no patch function. Thus, security vulnerabilities continue to exist, and security incidents continue to increase. In this study, we classified and analyzed the most common security vulnerabilities for IoT devices and identify the essential vulnerabilities of IoT devices that should be considered for security when producing IoT devices. This paper will contribute to reducing the occurrence of security vulnerabilities in companies that produce IoT devices. Additionally, companies can identify vulnerabilities that frequently occur in IoT devices and take preemptive measures.

• Journal of Information Science Theory and Practice
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• v.9 no.3
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• pp.1-13
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• 2021

In the current smart device-based information environment, information utilization is closely related to social capital. Additionally, the smart divide that occurs owing to the differences in use of smart devices has a significant influence on social capital. In this respect, this research empirically analyzed how the smart divide affects social capital construction. The study found that the level of and proficiency in using smart devices and diversity of the information formats used through smart devices affect social capital construction. Further, people who fully utilize smart devices can enhance their participation in social activities, social networks, and reciprocal activities, leading people to construct social capital in a wider range. Contrarily, those who are unable to use smart devices adequately may be disadvantaged in terms of the opportunity to construct social capital and share public interests. Thus, to maximize the intrinsic value of social capital, it is necessary to consider the factors of the smart divide as a complicated and multi-faceted digital divide and the ways to utilize social capital as a driving force for integrating society, and not as a mechanism for dividing members of society.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.988-991
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• 2004

In the present investigation, we tried AR coating simulation by using the "Essential Macleod optical coating design and analysis" program. After various run of the program we selected appropriate materials which have specific refractive indices and for that thickness was optimized to get the low reflectance. By comparing the simulated results for the different materials,we found that $SiO_2$ and TiN are the appropriate materials for this Flat panel device (FPD) application. Thin films of these materials were deposited using RF magnetron sputtering and Inductively Coupled Plasma Chemical Vapour Deposition (ICPCVD) methods on Polyethyleneterephthalate (PET) substrates. Spectroscopic ellipsometer (SE MF-1000) and UV-Vis spectrophotometer (SCINCO) were used for the optical characterization. The obtained experimental results are in good agreement with the simulation results.