• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.589-592
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• 1998

The performance of inductively coupled plasma (ICP) is enhanced by axial magnetic field driven by alternating current Helmholtz coils in this work. Langmuir pobe is used to characterize the plasma, and the etching performance is demonstrated with phororesist stripping process. It is shown that its density and uniformity depends on the frequency of driving current to the magnetic field.

• Journal of Magnetics
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• 제20권4호
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• pp.366-370
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• 2015

New ion beam etcher (IBE) using a magnetized inductively coupled plasma (M-ICP) has been developed. The magnetic flux density distributions inside the upper chamber, where the plasma is generated by inductive coupling, were successfully optimized by arranging a pair of circular coils very carefully. More importantly, the proposed M-ICP IBE exhibits higher etch rate than ICP.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2005년도 추계학술발표회 및 workshop
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• pp.173-174
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• 2005

• Applied Science and Convergence Technology
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• 제24권6호
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• pp.237-241
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• 2015

The reactor impedance is calculated for a planar-type cylindrical inductively coupled plasma source by expanding the electromagnetic fields into their Fourier-Bessel series forms including the three-dimensional shape of the antenna. The mode excitation method is utilized to determine the electromagnetic fields based on a Poynting theorem-like relationship. From the obtained electromagnetic fields, a tractable form of the reactor impedance is obtained as a function of various plasma and geometrical parameters and applied to carry out a parametric study.

• 조명전기설비학회논문지
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• 제13권4호
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• pp.82-86
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• 1999

본 연구에서는 푸로브법과 교류중첩법을 이용하여 고주파 유도결합 플라즈마에서 전자에너지 분포함수를 측정하였다. 실험조건은 압력 10∼40[mTorr], 입력파워는 100∼600[W]이고, 가스유량은 3∼12[sccm]이며, 전자에너지 분포함수의 공간분포 측정에 있어서 아스펙트비(R/L)는 2로 하였다. 전자에너지 분포함수는 압력 및 입력파워에 대하여 강한 의존성을 나타내었고, 가스유량이 증가할수록 증가 하였다. 전자에너지 분포함수의 반경방향 분포는 플라즈마 중심에서 최대가 되었다. 전자에너지 분포함수의 축방향 분포는 석영창과 기판 사이의 중심에서 최대가 되었다. 이러한 결과는 고주파 유도결합 플라즈마의 생성 메커니즘 이해와 간단한 ICP(Inductively Coupled Plasma) 모델링 응용에 기여할 수 있을 것이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.143.1-143.1
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• 2015

An inductively coupled plasma source driven by 13.56MHz was prepared for the deposition of a-C:H thin film. Properties of the plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe at first and second harmonic frequency were 13.56Mhz and 27.12Mhz respectively. Dependencies of plasma parameters on process parameters were agreed with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

• 한국표면공학회지
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• 제41권4호
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• pp.134-141
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• 2008

We have developed a numerical model for a remote ICP(inductively coupled plasma) system in 2D and 3D with gas distribution configurations and confirmed it by plasma diagnostics. The ICP source has a Cu tube antenna wound along a quartz tube driven by a variable frequency rf power source($1.9{\sim}3.2$ MHz) for fast tuning without resort to motor driven variable capacitors. We investigated what conditions should be met to make the plasma remotely localized within the quartz tube region without charged particles' diffusing down to a substrate which is 300 mm below the source, using the numerical model. OES(optical emission spectroscopy), Langmuir probe measurements, and thermocouple measurement were used to verify it. To maintain ion current density at the substrate less than 0.1 $mA/cm^2$, two requirements were found to be necessary; higher gas pressure than 100 mTorr and smaller rf power than 1 kW for Ar.

• 한국결정성장학회지
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• 제10권2호
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• pp.128-133
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• 2000

Numerical analysis of the transport phenomena in an inductively coupled plasma reactor was conducted with two-dimensional axisymmetric model including the electromagnetic field model, electron and species density models. The spatial distribution of the charged species in the ion flux to the wafer have been calculated to examine the influence of the process conditions including antenna and reactor geometry. The antenna radius had a significant influence on the plasma state and axial ion flux distribution.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1364-1366
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• 1997

Planar type magnetized inductively coupled plasma etcher has been built. The density and temperature of Ar plasma are measured as a function of rf power, external magnetic field, and pressure. The oxide etch rate and selectivity to polysilicon are measured as the above mentioned conditions and self-bias voltage.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.933-936
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• 2007

An inductively coupled plasma source with internaltype linear inductive antennas named as "multiple Utype antenna" was developed for the substrate size of $2,300mm\;{\times}\;2,000mm$. High density plasmas on the order of $1.18\;{\times}\;10^{11}\;cm^{-3}$ could be obtained and the RF power of 8kW with good plasma stability.