• 한국전기전자재료학회논문지
• /
• 제27권1호
• /
• pp.39-44
• /
• 2014

Silicon nitride thin film deposited with Plasma Enhanced Chemical Vapor Deposition was treated by a nitrogen plasma generated by Inductively Coupled Plasma at room temperature. The treatment was investigated by Fourier Transform Infrared Spectroscopy and Atomic Force Microscopy on the surface at various RF source powers at two RF bias powers. The amount of hydrogen was reduced and the surface roughness of the films was decreased remarkably after the plasma treatment. In order to understand the causes, we analyzed the plasma diagnostics by Optical Emission Spectroscopy and Double Langmuir Probe. Based on these analysis results, we show that the nitrogen plasma treatment was effective in the improving of the properties silicon nitride thin film for flexible display.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.477-477
• /
• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Bulletin of the Korean Chemical Society
• /
• 제32권2호
• /
• pp.434-438
• /
• 2011

Polycrystalline $CuInSe_2$ (CIS) was synthesized through solvothermal reactions in toluene with selected alkyl amines as complexing agents. The alkyl amines were used as reducing agent of selenium and catalytic ligands, enhancing the formation of CIS compounds in the colloidal solution. Toluene does not contribute the syntheses directly but minimizes the amounts of amines required for single phase CIS. We systematically studied the reactivity of amine compounds for the solovothermal syntheses, determined critical concentration of amine and the shortest reaction time. Crystallinity, morphology, chemical composition, and band gap of the prepared $CuInSe_2$ were respectively measured by X-ray diffraction, scanning electron microscopy, inductively coupled plasma atomic emission spectroscopy and UV-vis spectroscopy.

• Bulletin of the Korean Chemical Society
• /
• 제33권1호
• /
• pp.60-64
• /
• 2012

Silver(I) [bis(alkylthio)methylene]malonates were synthesized from the reaction of silver nitrate and potassium [bis(alkylthio)methylene]malonates. The structures of the Ag complexes were characterized with nuclear magnetic resonance (NMR), inductively coupled plasma atomic emission spectrometry (ICP-AES) and elemental analysis. Ag nanoparticles (NPs) were obtained from the decomposition of the Ag complexes in 1,2-dichlorobenzene at $110^{\circ}C$ without an additional surfactant. The average sizes of the Ag NPs are in the range of 5.1-6.3 nm and could be controlled by varying the length of the alkyl chain. The optical properties, crystalline structure and surface composition of Ag NPs were characterized with ultraviolet-visible (UV-visible) spectroscopy, transmission electron microscopy (TEM), X-ray diffraction (XRD), gas chromatography-mass spectrometry (GC-MS), X-ray Photoelectron Spectroscopy (XPS) and thermal gravimetric analysis (TGA).

• 한국재료학회지
• /
• 제29권11호
• /
• pp.697-702
• /
• 2019

In this study, using a wet chemical process, we evaluate the effectiveness of different solution concentrations in removing layers from a solar cell, which is necessary for recovery of high-purity silicon. A 4-step wet etching process is applied to a 6-inch back surface field(BSF) solar cell. The metal electrode is removed in the first and second steps of the process, and the anti-reflection coating(ARC) is removed in the third step. In the fourth step, high purity silicon is recovered by simultaneously removing the emitter and the BSF layer from the solar cell. It is confirmed by inductively coupled plasma mass spectroscopy(ICP-MS) and secondary ion mass spectroscopy(SIMS) analyses that the effectiveness of layer removal increases with increasing chemical concentrations. The purity of silicon recovered through the process, using the optimal concentration for each process, is analyzed using inductively coupled plasma atomic emission spectroscopy(ICP-AES). In addition, the silicon wafer is recovered through optimum etching conditions for silicon recovery, and the solar cell is remanufactured using this recovered silicon wafer. The efficiency of the remanufactured solar cell is very similar to that of a commercial wafer-based solar cell, and sufficient for use in the PV industry.

• 한국진공학회지
• /
• 제8권3B호
• /
• pp.276-282
• /
• 1999

For the quantitative surface analysis of multicomponent materials, algorithms for the compensation of the matrix effect and surface compositional change by ion beam sputtering must be established and reference materials having certified compositions are necessary. These certified reference material (CRM)s are needed for the improvement of instrument performance, inter-laboratory comparison and quantitative surface analysis. Surface analysis group of KRISS developed alloy thin film CRMs by and ion beam sputter deposition system and in-situ surface analysis system to control the composition of alloy thin films The real compositions of the CRMs were certified by inductively coupled plasma-atomic emission spectroscopy (ICP-AES).

• Bulletin of the Korean Chemical Society
• /
• 제23권8호
• /
• pp.1127-1134
• /
• 2002

Fine ceramic particles of zirconia toughened alumina (ZTA), titania toughened alumina (TTA), and zirconia-titania toughened alumina (ZTTA) have been synthesized by ultrasonic spray pyrolysis (USP) at various temperatures from starting salt solutio ns of various compositions aiming for the development of catalytic material. These particles were characterized for properties such as shape, size and size distribution, diffraction pattern, and chemical and phase composition of elements by scanning electron microscopy (SEM), particle size analyzer (PSA), x-ray diffraction (XRD), and inductively coupled plasma-atomic emission spectroscopy (ICP-AES). Chemical compositions and sizes of ceramic composites have been controled by the stoichiometry of salt solutions and the flow rate of spraying solutions. The optimum experimental conditions for the various composite particle syntheses have been proposed.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.195-196
• /
• 2007

In this paper, we investigated impurity content of carbon nanotube reinforced semiconductive shield materials and conventional semiconductive shield materials in power cables. To reduce impurity content, we used solution compounding method that an adding process of extra additives neglected. Impurity content measured through ICP-AES(Inductively Coupled Plasma Atomic Emission Spectroscopy). Also, impurity measured Ca, Cu, Fe, Al, Mg, Na, K, Si in eight. As a result, carbon nanotube reinforced semiconductive shield materials is lower than conventional semiconductive shield materials in impurity content by ICP-AES.

• 분석과학
• /
• 제15권6호
• /
• pp.521-528
• /
• 2002

남해연안 갯벌 속에 있는 무기원소들의 정량을 위해 중성자 방사화 분석법과 ICP-AES를 적용하였다. 중성자 방사화 분석법과 ICP=AES에 의하여 얻어진 Al, Ca, Fe, Mg, K, Na의 분석결과들을 상호 비교하였다. 결과적으로 침전물 중의 미량 원소를 분석하는데 ICP-AES보다 중성자 방사화 분석법이 더 우수한 것으로 나타났다. 따라서 중성자 방사화 분석법은 갯벌과 같은 복잡한 모체를 갖는 환결시료들의 분석헤서 중요한 역할을 할 것이다.

• Nuclear Engineering and Technology
• /
• 제49권3호
• /
• pp.562-568
• /
• 2017

Background: The chemical characterization of metallic alloys and oxides is conventionally carried out by wet chemical analytical methods and/or instrumental methods. Instrumental neutron activation analysis (INAA) is capable of analyzing samples nondestructively. As a part of a chemical quality control exercise, Zircaloys 2 and 4, nimonic alloy, and zirconium oxide samples were analyzed by two INAA methods. The samples of alloys and oxides were also analyzed by inductively coupled plasma optical emission spectroscopy (ICP-OES) and direct current Arc OES methods, respectively, for quality assurance purposes. The samples are important in various fields including nuclear technology. Methods: Samples were neutron irradiated using nuclear reactors, and the radioactive assay was carried out using high-resolution gamma-ray spectrometry. Major to trace mass fractions were determined using both relative and internal monostandard (IM) NAA methods as well as OES methods. Results: In the case of alloys, compositional analyses as well as concentrations of some trace elements were determined, whereas in the case of zirconium oxides, six trace elements were determined. For method validation, British Chemical Standard (BCS)-certified reference material 310/1 (a nimonic alloy) was analyzed using both relative INAA and IM-NAA methods. Conclusion: The results showed that IM-NAA and relative INAA methods can be used for nondestructive chemical quality control of alloys and oxide samples.