• Proceedings of the KSME Conference
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• 2002.08a
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• pp.365-368
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• 2002

The design of industrial arc plasma systems is still largely based on trial and error although the situation is rapidly improving because of the available computational power at a cost which is still fast coming down. The desire to predict the behavior of arc plasma system, thus reducing the development cost, has been the motivation of arc research. To interrupt fault current, the most enormous duty of a circuit breaker, is achieved by separating two contacts in a interruption medium, $SF_{6}$ gas or air etc., and arc plasma is inevitably established between the contacts. The arc must be controlled and interrupted at an appropriate current zero. In order to analyze arc behavior in $SF_{6}$ gas circuit breakers, a numerical calculation method combined with flow field and electromagnetic field has been developed. The method has been applied to model arc generated in the Aachen nozzle and compared the results with the experimental results. Next, we have simulated the unsteady flow characteristics to be induced by arcing of AC cycle, and conformed that the method can predict arc behavior in account of thermal transport to $SF_{6}$ gas around the arc, such as increase of arc voltage near current zero and dependency of arc radius on arc current to maintain constant arc current density.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2078-2083
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• 2007

We have analyzed operating characteristics of transformer-type superconducting fault current limiter (SFCL) according to the serial or parallel connections of secondary coils with $YBa_2Cu_3O_7$ (YBCO) thin films. The turn ratio between the primary and secondary coils was 63:21. Transformer-type SFCL using a transformer with secondary winding of serial or parallel coils could reduce the unbalanced quench caused by differences of the critical current density between YBCO thin films. We found that transformer-type SFCL having serial or parallel connections induced simultaneous quench between the superconducting units. The limiting current in the transformer-type SFCL with a parallel connection was lowered to 30 % compared to the SFCL with a serial connection. In the meantime, when the currents generated in the superconducting units were similar, the voltage value in the parallel connection was 60 % as low as that in the serial connection. However, the voltage generated in the primary winding was some higher. In conclusion, we found that transformer-type SFCL with parallel connection of secondary coils was more effective in fault current limiting characteristics and in the reduction of the consumption power for superconducting units compared to those of the transformer-type SFCL with serial connection of secondary coils.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.385-385
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• 2012

A two terminal N+/P/N+ junction device to replace the conventional selective transistor was studied as a bilateral switching device for spin transfer torque (STT) MRAM based on 3D device simulation. An N+/P/N+ junction structure with $30{\times}30nm$ area requires bi-directional current flow enough to write a data by a drain induced barrier lowering (DIBL) under a reverse bias at N+/P (or P/N+ junction), and high current on/off ratio of 106. The SiGe materials are widely used in hetero-junction bipolar transistors, bipolar compensation metal-oxide semiconductors (BiCMOS) since the band gap of SiGe materials can be controlled by changing the fraction and the strain epilayers, and the drift mobility is increased with the increasing Ge content. In this work, N+/P/N+ SiGe material based junction provides that drive current is increased from 40 to $130{\mu}A$ by increased Ge content from 10~80%. When Ge content is about 20%, the drive current density of SiGe device substantially increased to 2~3 times better than Si-based junction device in case of 28 nm P length, which is sufficient current to operation of STT-MRAM.

• Journal of the Korean Vacuum Society
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• v.21 no.4
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• pp.219-224
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• 2012

We study for long-term performance of amorphous silicon solar cells under light exposure. The performance is predicted with a kinetic model in which the carrier lifetimes are determined by the defect density. In particular, the kinetic model is described by the stretched-exponential relaxation of defects to reach equilibrium. In this report, we simulate the light-induced degradation of the amorphous silicon solar cells with the kinetic model and AMPS-1D computer program. And data measured for outdoor performances of various solar cells are compared with the simulated results. This study focuses on examining the light-induced degradation for the following amorphous silicon pin solar cells: thickness${\approx}$300 nm, built-in potential${\approx}$1.05 V, defect density (at t=0)${\approx}5{\times}10^{15}cm^{-3}$, short-circuit current density (at t=0)${\approx}15.8mA/cm^2$, fill factor (at t=0)${\approx}0.691$, open-circuit voltage (at t=0)${\approx}0.865V$, conversion efficiency (at t=0)${\approx}9.50%$.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.53-58
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• 2005

We researched damage formation and failure mechanism under DC(direct current) and AC(alternative current) in order to estimate reliability of Cu interconnects in ULSI. Higher current density and temperature induces more short TTF(time to failure) during interconnects carry DC. Measurement reveals that Cu electromigration has activation energy of 0.96eV and current density exponent value of 4. Thermal fatigue is occurred under DC, and higher frequency and ${\Delta}$T value gives more severe damage during interconnects carry AC Through failure morphology analysis with respect to texture, we observed that damages had grown widely and facetted grains had appeared in (100)grain but damages in (111) had grown thickness direction of line and had induced a failure rapidly.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.139-140
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• 2002

This paper discusses the effect of plating condition on the mechanical property of electroplated Cu film. Current density, the amount of the organic additives was found to affect the residual stress of electroplated copper film. The result show that, in the case of residual stress, the copper film deposited at higher additive result in lower residual stress and plating current by $15mA/cm^2$ induced a better result than any other ones.

• Korean Journal of Materials Research
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• v.28 no.8
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• pp.440-444
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• 2018

An effective cleaning method for Ni removal in Ni-induced lateral crystallization(Ni-MILC) poly-Si TFTs and their electrical properties are investigated. The HCN cleaning method is effective for removal of Ni on the crystallized Si surface, while the nitric acid treatment results decrease by almost two orders of magnitude in the Ni concentration due to effective removal of diffused Ni mainly in the poly-Si grain boundary regions. Using the HCN cleaning method after the nitric acid treatment, re-adsorbed Ni on the Si surfaces is effectively removed by the formation of Ni-cyanide complexions. After the cleaning process, important electrical properties are improved, e.g., the leakage current density from $9.43{\times}10^{-12}$ to $3.43{\times}10^{-12}$ A and the subthreshold swing values from 1.37 to 0.67 mV/dec.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.53 no.5
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• pp.295-304
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• 2004

This paper deals with characteristic analysis method using d-q axis equivalent circuit considering iron loss in a single-phase line-start permanent magnet synchronous motor. The iron loss resistance to account for the iron loss is included in the equivalent circuit to improve the modeling accuracy. Furthermore, for the improved calculation of the iron loss, the iron loss is calculated from the magnetic flux density by 2-dimensional finite element method. The result is represented as the iron loss resistance and connected in parallel with the total induced voltage. Therefore, the currents can be expressed as the summation the output current with the current corresponding to the iron loss. Finally, the steady state characteristic analysis results are compared with the experimental results to verify this approach.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.306-309
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• 2016

The Cs₃Sb photocathode was formed by non-vacuum process technology. An in-situ vacuum device was fabricated successively with flat cesium antimonide photocathode emitters fabricated in a process chamber. The electrical properties of the device were characterized. Electron emission from the devices was induced by photoemitted electrons, which were accelerated by an anode electric field that was shielded from the photoemitter surface. The electrical characteristics of the devices were investigated by measuring the anode current as a function of device operation times with respect to applied anode voltages. Planar blue LED light with a 450 nm wavelength was used as an excitation source. The results showed that the cesium antimonide photocathode emitter has the potential of long lifetime with stable electron emission characteristics in panel devices. These features demonstrate that the cesium antimony photocathodes produced by non-vacuum processing technology is suitable for flat cathodes in panel device applications.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.39 no.8
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• pp.820-827
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• 1990

For the purpose of investigation the thrust force, the lateral force, and the eddy current loss when the primary and the secondary of a single-sided linear induction motor is displaced in the space, this paper proposes an analysis technique for the characteristics of the eddy current induced on the secondary and the magnetic flux density distribution in the y-z plane by F.E.M. To verify the effectiveness of this analysis technique, the starting-thrust force due to a lateral displacement is compared to the experimental data.