• Journal of Korean Ophthalmic Optics Society
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• v.7 no.2
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• pp.155-161
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• 2002

We studied the formation of nickel nano thin film that have various electrochromic properties. Nickel thin film having various thickness will apply photoelectronic devices, specially, electrochromic devices. These devices will apply lens, battery, glass and solar cell that have light, thin, simple and small that applied nanotechnology and quantum dot. Nickel thin film was coated by electrochemical method on ITO electrode. We studied the thin film properties by Cyclic voltammetry, Chronoamperometry. Impedance. X-ray diffraction analysis and Atomic force microscopy.

• Journal of Surface Science and Engineering
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• v.40 no.4
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• pp.165-169
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• 2007

Compared to conventional Indium Tin Oxide (ITO) film deposition methods, cesium (Cs) assisted sputtering offers higher film characteristics in terms of electrical, mechanical and optical properties. However, it showed highly non-linear characteristics between process input factors and equipment responses. Therefore, to maximize film quality, optimization of manufacturing process is essential and process characterization is the first step for process optimization. For this, we designed 2 level design of experiment (DOE) to analyze ITO film characteristics including film thickness, resistivity and transmittance. DC power, pressure, carrier flow, Cs temperature and substrate temperature were selected for process input variables. Through statistical effect analysis methods, relation between three types of ITO film characteristics and five kinds of process inputs are successfully characterized and eventually, it can be used to optimize Cs assisted sputtering processes for various types of film deposition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.354-355
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• 2005

Indium tin oxide (ITO) thin film was polished by chemical mechanical polishing (CMP) by the change of process parameters for the improvement of electrical and optical properties of ITO thin film. Light transparent efficiency of ITO thin film was improved after CMP process at the optimized process parameters compared to that before CMP process.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1542-1545
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• 2009

For the application of flexible substrate to future display and new transparent devices, indium tin oxide (ITO) thin film was formed on polycarbonate(PC) substrate at room temperature by in-line sputter system. During the ITO sputtering, Ar and $O_2$ reaction gas were fixed at a constant value and the process pressure was varied from 3 to 7 mtorr. From the electrical and the optical properties of sputtered ITO films, the sheet resistances of as-deposited ITO films varied with a different pressure and the optical transmittances of the ITO films at visible wavelength were maintained above 85%. The results are considered to be due to the saturation of $O_2$ atoms from reaction in ITO film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.563-567
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• 2006

Indium tin oxide (ITO) used as an electrode in organic light emitting diodes (OLEDs) and organic thin film transistors (OTFTs) was modified by a self-assembled monolayer (SAM). For device fabrication, surface of the ITO was modified by immersion in a solution including various phosphonic acid at room temperature in order to increase work function of an electrode. The work function of ITO with SAM was measured by Kelvin probe. Work function increase of 0.88 eV was observed in ITO with various SAM. Therefore, ohmic contact is achieved in an interface between ITO and organic semiconductors (pentacene). We analyzed the origin of work function increase of ITO with SAM by X-ray photoelectron spectroscopy. We confirmed that increase of oxygen bonding energy attributed to increase the work function of ITO. These results suggested that ITO with the SAM gives a high possibility for high performance of OLEDS and OTFTs.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.151-153
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• 2005

Indium tin oxide (ITO) thin film was polished by chemical mechanical polishing (CMP) by the change of process parameters for the improvement of electrical and optical properties of ITO thin film. Light transparent efficiency of ITO thin film was improved after CMP process at the optimized process parameters compared to that before CMP process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.9
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• pp.798-801
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• 2007

Multilayer transparent electrodes, having a much lower electrical resistance than the widely used transparent conducting oxide electrodes, were prepared by using radio frequency magnetron sputtering. The multilayer structure consisted of five layers, indium tin oxided (ITO)/zinc oxide (ZnO)/Ag/zinc oxide (ZnO)/ITO. With about 50 nm thick ITO films, the multilayer showed a high optical transmittance in the visible range of the spectrum and had color neutrality. The electrical and optical properties of ITO/ZnO/Ag/ZnO/ITO multilayer were changed mainly by Ag film properties, which were affected by the deposition process of the upper layer. Especially ZnO layer was improved to adhesion of Ag and ITO. A high quality transparent electrode, having a resistance as low as and a high optical transmittance of 91% at 550 nm, was obtained. It could satisfy the requirement for the flexible OLED and LCD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.397-397
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• 2007

Multilayer transparent electrodes, having a much lower electrical resistance than the widely used transparent conducting oxide electrodes, were prepared by using radio frequency magnetron sputtering. The multilayer structure consisted of five layers, indium tin oxided(ITO)/zinc oxide(ZnO)/Ag/oxide(ZnO)/ITO. With about 50nm thick ITO films, the multilayer showed a high optical transmittance in the visible range of the spectrum and had color neutrality. The electrical and optical properties of ITO/ZnO/Ag/ZnO/ITO multilayer were changed mainly by Ag film properties, which were affected by the deposition process of the upper layer. Especially ZnO layer was improved to adhesion of Ag and ITO. A high quality transparent electrode, having a resistance as low as and a high optical transmittance of 91% at 550nm, was obtained. It could satisfy the requirement for the flexible OLED and LCD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.857-860
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• 2002

The material that is both conductive in electricity and transparent to the visible-ray is called transparent conducting thin film. It has many field of application such as solar cell, liquid crystal display, transparent electrical heater, selective optical filter, and a optical electric device. In this study, indium tin oxide (ITO ; Sn-doped $In_2O_3$) thin films were deposited on $SiO_2$/soda-lime glass plates by a dc magnetron sputtering technique. The crystallinity and electrical properties of the films were investigated by X-ray diffraction(XRD), atomic force microscopy (AFM) scanning and 4-point probe. The optical transmittance of ITO films in the range of 300-1000nm were measured with a spectrophotometer. As a result, we obtained polycrystalline structured ITO films with (222), (400), and (440) peak. Transmittance of all the films were higher than 90% in the visible range.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.342.2-342.2
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• 2014

IZO, ITO, ITO 등의 투명전극들 중 Indium Tin Oxide (ITO) 다른 전극에 비해 높은 광투과도와 낮은 저항으로 인하여 다양한 부분에서 널리 이용되고 있다. 본 연구에서는 우수한 투과도의 멀티 layer 단열 창호를 위한 film 개발을 위해 RF magnetron system을 이용하여 Sodalime Glass와 polyethylene terephthalate (PET) substrate에 ITO를 증착함으로써 전기적 광학적 특성을 조사하였다. 실험은 power 변화와 Ar, O2의 가스 분압비, Working Pressure의 변화를 변수로 두어 진행하였다. 측정은 Ellipsometry를 이용하여 광학적인 두께와 굴절률을 조사하였고 UV visible spectrometer를 통해 광학적인 투과도를 확인하였다. Power는 100 Watt 늘려가며 진행하였고 O2 유량의 변화에 따라 투과도와 면저항, 굴절률 특성이 달라짐을 확인할 수 있었다. O2의 유량에 따라 면저항이 줄어들다가 어느 정도 이상이 되면 급격히 증가함을 확인할 수 있었다. Working Pressure 변화에 따른 전기적 광학적 특성 또한 확인 하였다.